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High-k和CVD/ALD金属前体全球市场规模、份额和行业趋势分析报告:按技术(互连、电容器、门)、区域展望和预测2022-2028Global High-k And CVD ALD Metal Precursors Market Size, Share & Industry Trends Analysis Report By Technology (Interconnect, Capacitors, and Gates), By Regional Outlook and Forecast, 2022 - 2028 |
到 2028 年,用于High-k和 CVD/ALD 的金属前驱体的全球市场规模预计将达到 7.4 亿美元,在预测期内以 6.3% 的复合年增长率增长。。
ALD 是製造半导体器件的关键步骤,也是合成纳米材料的武器工具。具有高介电常数的材料用于快速数据访问和存储。 ALD 除了能够将薄膜厚度控制在埃级别外,即使对于具有大纵横比的结构,ALD 也能够实现出色的成膜效果。高介电常数材料薄膜,如 Al2O3、HfO2、Ta2O5、High-k栅极氧化物、用于 DRAM 的 ZrO2,以及用于电极和互连的氮化物,都是通过 ALD 工艺製造的。
ALD(原子层沉积)是用于製造薄膜的 CVD(化学气相沉积)技术的一个子类别。 ALD 工艺共同註入前体,例如 Hf 和 Si,以形成多组分薄膜,从而形成单层均匀薄膜,用于各种应用,例如用于气相沉积的 3D NAND、自对准图案和 FinFET。
COVID-19 影响分析
这扰乱了High-k和 CVD/ALD 金属前体的整个供应链。与此同时,High-k和 CVD/ALD 金属前体业务将在当前的经济衰退期间获利,因为越来越多的组织寻求僱用远程员工,而最终用户在数字平台上消费更多材料。我预见到这样做的机会。这推动了内存和存储解决方案对于数据笔记本电脑和数据中心、小型且具有成本效益的封装 IC 和其他半导体设备的重要性。放宽锁定限制后,预计半导体设备组件製造商将改变其采购策略、生产计划和行业动态以刺激增长。
市场增长因素
纳米技术需求增加,应用范围扩大
纳米技术是能够自我复制的指数级技术的代名词。它还意味着一种生产方法,使製造商能够以清洁、廉价和快速的方式生产商品。在医学领域,已经开始生产具有定制分子大小的纳米颗粒,以便将药物直接输送到受损细胞。这最大限度地减少了化学疗法造成的损害,化学疗法会杀死健康细胞。
近年来全球发展最快的半导体领域
人工智能、物联网和 5G 等技术的出现极大地扩展了数据驱动解决方案的发展。为了基于这些技术构建尖端解决方案,许多公司都在研发活动中投入了大量精力。提供有效、复杂和智能解决方案的需求增加了对嵌入设备的 IC 的需求。
市场障碍
製造过程中的技术挑战和復杂性
半导体製造需要卫生设施和设备。即使是少量的灰尘也会严重干扰製造过程并降低质量。由于製造错误造成的交货延迟可能会导致订单取消和额外损失。半导体製造容易受到机械缺陷、原材料缺陷和芯片级问题的影响。此外,製造高质量的半导体器件以及 IC(集成电路)需要创新和原创技术。
技术展望
High-k和 CVD/ALD 金属前体市场按技术细分为互连、电容器和栅极。到 2021 年,栅极部分将在High-k和 CVD ALD 金属前体市场中占据重要的收入份额。已经对用于从High-k导电聚合物製造薄膜的 ALD 方法进行了重要研究。金属栅极技术与High-k电介质的结合可□□以显着降低厚度为 1 纳米或更小的晶体管的栅极洩漏。
区域展望
按地区分析了北美、欧洲、亚太地区和 LAMEA 的High-k和 CVD/ALD 金属前体市场。 2021 年,亚太地区在High-k和 ALD CVD 电介质金属前驱体市场的收入份额最大。由于中国对电子产品的需求显着增加以及电子设备製造持续外包给中国等因素,该地区预计在预测期内将显着增长。
The Global High-k And CVD ALD Metal Precursors Market size is expected to reach $740.0 Million by 2028, rising at a market growth of 6.3% CAGR during the forecast period.
High-k is a substance with a high dielectric constant that has been the industry benchmark for the gate dielectric substrate of a device for a very long period of time, compared to silicon dioxide. Widespread usage of high-k dielectrics in the semiconductor production process has enabled the miniaturization of microelectronic components.
Both atomic layer deposition (ALD), as well as chemical vapor deposition (CVD) thin film deposition methods, utilize a chemical interaction between the material and the substrate to be deposited. Atomic layer deposition (ALD) is a thin-film deposition technology based on the successive usage of a form of chemical vapor deposition procedure employing two chemicals referred to as precursors or reactants that react with the material surface in a sequential, self-limiting manner.
ALD is a crucial step in the production of semiconductor devices and a tool in the arsenal for the synthesis of nanomaterials. The materials with high dielectric values are utilized for quick data access and storage. In addition to giving thickness control there at the Angstrom level, ALD enables excellent conformality of deposition in structures with large aspect ratios. Thin films made from high-k dielectric materials, like Al2O3, HfO2, Ta2O5, high-k gate oxides, ZrO2 for DRAM, and nitrides for electrodes and interconnects, are produced using the ALD process.
Atomic Layer Deposition (ALD) is a subcategory of the Chemical Vapor Deposition (CVD) technique, which is used to produce thin films. The ALD process is used to deposit multi-component thin films via co-injecting precursors, like Hf and Si, for the formation of a single-layer homogeneous film utilized in a variety of applications, including 3D NAND, self-aligned patterning, and FinFET.
COVID-19 Impact Analysis
This has disrupted the High-K and ALD CVD Metal Precursors market's overall supply chain. In contrast, the High-K and ALD CVD metal precursors business anticipates an opportunity to capitalize during the current economic downturn, as more organizations seek to employ remote workers and as end-users consume more material on digital platforms. This impacts the significance of memory and storage solutions for data laptops, centers, and other devices, such as small, cost-effective, high-powered packaged ICs and other semiconductor devices. After lockdown constraints are relaxed, it is estimated that semiconductor device component manufacturers would alter their sourcing strategy, production planning, and industry dynamics to drive growth.
Market Growth Factors
Rising Demand And Number Of Applications Of Nanotechnology
Nanotechnology is capable of self-replication, which is synonymous with exponential technology. It also signifies a production method, which means that manufacturers would be able to produce goods in a clean, inexpensive, and quick manner. In addition, in the field of Medicine, researchers have begun producing nanoparticles that are customized to the size of molecules in order to deliver medications directly to damaged cells. This strategy would minimize the damage caused by chemotherapy, which kills healthy cells in patients.
The Rapid Expansion Of The Semiconductor Sector All Over The World In Recent Years
As a result of the emergence of technologies such as artificial intelligence, the Internet of Things, and 5G, the development of data-driven solutions has expanded dramatically. Numerous businesses place a significant emphasis on research and development activities in order to build cutting-edge solutions based on such technology. There is an increase in demand for ICs to be embedded in devices as a result of the requirement to provide effective, sophisticated, and intelligent solutions.
Market Restraining Factors
Technical Challenges And Complexities In The Manufacturing Process
Manufacturing methods for semiconductors require hygienic facilities and equipment. Even a modest amount of dust can significantly hinder and degrade the process. Order cancellations and additional losses may result from delivery delays caused by production errors. Mechanical integrity difficulties, flaws in the raw materials, and chip-level problems typically impede the fabrication of semiconductors. Moreover, for the production of high-quality semiconductor devices along with integrated circuits (ICs), innovative and inventive techniques are necessary.
Technology Outlook
By Technology, the High-k And CVD ALD Metal Precursors Market is segregated into Interconnect, Capacitors, and Gates. In 2021, the gate segment garnered a substantial revenue share of the high-K and CVD ALD metal precursors market. Significant research has been done on the ALD approach for producing thin films from high-k dielectric conducting polymers. The combination of metal gate technologies and high-k dielectric allows a significant reduction in gate leakage for transistors with a thickness of one nanometer or less.
Regional Outlook
Region-Wise, the High-k And CVD ALD Metal Precursors Market is analyzed across North America, Europe, Asia-pacific, and LAMEA. In 2021, Asia-Pacific witnessed the largest revenue share of the high-K and ALD CVD dielectric metal precursors market. Due to factors such as China's significantly high demand for electronic items and continuing outsourcing of electronic device manufacture to China, it is anticipated that the region would grow significantly over the forecast duration.
The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Air Liquide S.A, Air Product & Chemicals, Inc., The Dow Chemical Company, Linde PLC, Merck KGAA, Samsung Electronics Co., Ltd., Nanmat Technology Co. Ltd., Adeka Corporation, Strem Chemicals, Inc., and Colnatec.
Market Segments covered in the Report:
By Technology
By Geography
Companies Profiled
Unique Offerings from KBV Research
List of Figures