离散半导体的全球市场预测(2022年～2027年)

全球离散半导体的市场规模在2020年估算为238亿478万1,000美金，以年复合成长率6.22％的速度成长，到2027年达到363亿823万3,000美元。市场成长的主要因素有不断增长的需求和小型化以控制电路中的功率，以及对高能效设备的需求不断增长等。

本报告提供全球离散半导体市场相关调查，提供市场规模和预测，COVID-19影响，市场促进因素及课题，市场趋势，各市场区隔的市场分析，竞争情形，主要企业的简介等系统性资讯。

目录

第1章 简介

• 市场概要
• COVID-19影响
• 市场定义
• 市场区隔

第2章 调查手法

• 调查资料
• 前提条件

第3章 摘要整理

• 调查的重点

第4章 市场动态

• 推动市场要素
• 阻碍市场要素
• 波特的五力分析
  • 供给企业谈判力
  • 买方议价能力
  • 新加入厂商者的威胁
  • 替代品的威胁
  • 竞争企业间的敌对关係
• 产业的价值链分析

第5章 全球离散半导体市场:各类型

• 简介
• 闸流体
• 整流器
• 功率电晶体
• 小信号电晶体
• 二极体
• 其他

第6章 全球离散半导体市场:各业界

• 简介
• 家电
• 通讯·技术
• 汽车
• 製造

第7章 全球离散半导体市场:各地区

• 简介
• 南北美洲
  • 美国
  • 其他
• 欧洲，中东·非洲
  • 德国
  • 法国
  • 其他
• 亚太地区
  • 中国
  • 日本
  • 韩国
  • 台湾
  • 其他

第8章 竞争环境与分析

• 主要企业策略分析
• 新兴企业与市场的有利性
• 合併，收购，契约，合作
• 供应商的竞争矩阵

第9章 企业简介

• onsemi
• Vishay Intertechnology, Inc.
• Infineon Technologies AG
• STMicroelectronics
• IXYS Corporation
• Toshiba Corporation
• Diodes Incorporated
• NXP Semiconductors
• Central Semiconductor Corp
• Renesas Electronic Corporation

The global discrete semiconductor market is estimated to grow at a CAGR of 6.22% to reach a market size of US$36,308.233 million by 2027, from US$23,804.781 million in 2020.

A discrete semiconductor device is a single semiconductor system that works a fundamental electronic function. It solely impacts the current flow enclosed in its packaging and performs a single purpose. These components are primarily intended for use with high power and high frequency. Power discrete drives and discrete semiconductors are used in different power supply units for a wide range of electronic uses, from consumer devices to electric charging stations. The growing requirement to control power across circuits and downsizing are driving the discrete semiconductor business. Power dissipation is inversely proportional to package size decrease. During the projected period, the growing need for high-power efficiency devices is likely to drive semiconductor demand. Simultaneously, worldwide demand for wireless and consumer electronics goods is increasing, which is likely to drive demand for discrete semiconductors.

Growth Factors

Because of digital transformation, growth in remote work, and increased use of Internet services, network traffic has been rising. This has spurred investment capital in communication base stations and data centres. Because of this, the market for discrete semiconductors will continue to grow as demand for power supply equipment rises. Data centres and communication base stations are equipped with power semiconductors (diodes) that effectively convert (rectify) the AC power they get from utility companies into DC power since these facilities need a significant quantity of DC power to operate. Moreover, in November 2021, to help data centres and communication base stations save energy, Fuji Electric Co., Ltd. introduced its 2nd-generation discrete SiC-SBD* range of power semiconductors.

With the increased adoption of EVs and HEVs, automotive is one of the rising areas of the discrete semiconductors industry, and it is expected to have a large share.

The market growth for discrete semiconductors can be due to technological advancements like as autonomous car technology, braking systems, and the incorporation of a wide range of sensors (like LiDAR and cameras). Furthermore, government rules mandating advanced driver assistance systems (ADAS) have supported the segment's growth. Automotive electronic components are crucial for safety and are exposed to high voltages and weather conditions. As a result, manufacturers have created a new range of discrete semiconductors for vehicle industries.

Furthermore, consumer electronics make extensive use of discrete semiconductors.

Low-cost availability and attractive incentives are increasing demand for consumer devices, resulting in the increasingly growing market for discrete semiconductors. Furthermore, the top market companies are extensively spending on R&D operations to produce cutting-edge consumer electronics. These factors are also expected to drive market expansion. However, design and steadily growing pricing may limit market expansion. Therefore, all these factors are positively influencing the global discrete semiconductor market.

In addition, due to the extensive and innovative product launches by companies, the global market demand for discrete semiconductors is anticipated to increase in the upcoming years.

Infineon Technologies AG, for example, initiated its high-tech chip production for electrical machines on 300-millimetre thin wafers in Austria, in September 2021, investing a total of EUR 1.6 billion in one of the region's most notable initiatives in the European micro-electronic market. Additionally, Infineon Technologies AG's 650 V CoolSiC Hybrid Discrete for Automotive was released in March 2021. The gadget employs a 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode to provide a cost-effective performance boost while maintaining high reliability. This combination, in addition to bidirectional charging, provides the best cost-benefit trade for hard-switching topologies. In addition, enterprises are creating innovative solutions in the power module area in order to extend their presence and market share.

Market Developments

STMicroelectronics, a prominent semiconductor company dealing with customers across the spectrum of electronics applications, for example, announced the release of its new model of STPOWER silicon-carbide (SiC) MOSFETs1 in December 2021, advancing the condition in power devices for electric-vehicle (EV) powertrains and other implementations in which energy capacity, power efficiency, and durability are key target criteria.

Moreover, Alpha & Omega Semiconductor Limited, a designer, pioneer, and global supplier of power semiconductors, power ICs, and digital energy solutions, will offer AEC-Q101-approved 1200V SiC MOSFETs in an optimized TO-247-4L package in March 2021. It is designed to meet the highly efficient and reliable requirements of EV onboard chargers, motor drive inverters, and off-charging stations. The 1200V SiC MOSFETs have a low on-resistance and a standard gate drive of 15V for an automotive-qualified TO-247-4L. Therefore, all these factors will contribute to the development of the market demand for the coming years.

In January 2022, Vishay Intertechnology Inc. released two new n-channel TrenchFET MOSFETs: the SiJH600E at 60 V and the SiJH800E at 80 V. By combining ultra-low on-resistance with high-temperature functioning to +175 °C and high continuous drain current handling, these improve power density, efficiency, and board-level dependability in telecom and industrial applications.

SEGMENTATION:

By Type

Thyristors

Rectifiers

Power Transistors

Small Signal Transistors

Diodes

Others

By Industry Vertical

Consumer Electronics

Communication

Automotive

Manufacturing

By Geography

Americas

USA

Others

Europe Middle East and Africa

Germany

France

Others

Asia Pacific

China

Japan

South Korea

Taiwan

Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. COVID-19 Scenario
• 1.3. Market Definition
• 1.4. Market Segmentation

2. RESEARCH METHODOLOGY

• 2.1. Research Data
• 2.2. Assumptions

3. EXECUTIVE SUMMARY

• 3.1. Research Highlights

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Force Analysis
  • 4.3.1. Bargaining Power of Suppliers
  • 4.3.2. Bargaining Power of Buyers
  • 4.3.3. Threat of New Entrants
  • 4.3.4. Threat of Substitutes
  • 4.3.5. Competitive Rivalry in the Industry
• 4.4. Industry Value Chain Analysis

5. GLOBAL DISCRETE SEMICONDUCTORS MARKET, BY TYPE

• 5.1. Introduction
• 5.2. Thyristors
• 5.3. Rectifiers
• 5.4. Power Transistors
• 5.5. Small Signal Transistors
• 5.6. Diodes
• 5.7. Others

6. GLOBAL DISCRETE SEMICONDUCTORS MARKET, BY INDUSTRY VERTICAL

• 6.1. Introduction
• 6.2. Consumer Electronics
• 6.3. Communication and technology
• 6.4. Automotive
• 6.5. Manufacturing

7. GLOBAL DISCRETE SEMICONDUCTORS MARKET, BY GEOGRAPHY

• 7.1. Introduction
• 7.2. Americas
  • 7.2.1. USA
  • 7.2.2. Others
• 7.3. Europe Middle East and Africa
  • 7.3.1. Germany
  • 7.3.2. France
  • 7.3.3. Others
• 7.4. Asia Pacific
  • 7.4.1. China
  • 7.4.2. Japan
  • 7.4.3. South Korea
  • 7.4.4. Taiwan
  • 7.4.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 8.1. Major Players and Strategy Analysis
• 8.2. Emerging Players and Market Lucrativeness
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations
• 8.4. Vendor Competitiveness Matrix

9. COMPANY PROFILES

• 9.1. onsemi
• 9.2. Vishay Intertechnology, Inc.
• 9.3. Infineon Technologies AG
• 9.4. STMicroelectronics
• 9.5. IXYS Corporation
• 9.6. Toshiba Corporation
• 9.7. Diodes Incorporated
• 9.8. NXP Semiconductors
• 9.9. Central Semiconductor Corp
• 9.10. Renesas Electronic Corporation