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1678803

全球碳化硅 (SiC) 半导体市场 - 2025 至 2032 年

Global Silicon Carbide (SiC) Semiconductor Market - 2025-2032

出版日期: 2025年03月11日 | 出版商:

DataM Intelligence | 英文 205 Pages | 商品交期: 最快1-2个工作天内

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简介目录

2024 年全球碳化硅 (SiC) 半导体市场规模达到 8.102 亿美元，预计到 2032 年将达到 26.3709 亿美元，在 2025-2032 年预测期内的复合年增长率为 15.9%。

受高功率、高效率应用需求不断增长的推动，碳化硅 (SiC) 半导体市场正在经历强劲成长。碳化硅半导体比传统硅具有更优异的性能，包括更高的热导率、更高的能源效率以及在更高电压和温度下工作的能力。电动车（EV）、再生能源、航太和工业电力电子等产业的市场发展势头强劲。

例如，2024年，意法半导体（STMicroelectronics）推出其第四代STPOWER碳化硅（SiC）MOSFET技术。第四代技术在功率效率、功率密度和稳健性方面带来了新的基准。新技术在满足汽车和工业市场需求的同时，也特别针对电动车（EV）动力系统的关键零件牵引逆变器进行了最佳化。

此外，2025年，英飞凌科技股份公司在其200毫米碳化硅（SiC）路线图上取得了重大进展。该公司将于 2025 年第一季向客户发布首批基于先进的 200 毫米 SiC 技术的产品。

此外，再生能源领域也从 SiC 半导体中受益匪浅。例如，英飞凌科技为太阳能逆变器提供 SiC 解决方案，减少能量损失并提高功率密度。航太工业也取得了进步，美国国家航空暨太空总署的格伦研究中心开发出了能够在 930°F (500°C) 的温度下运行数千小时的 SiC 电路，这对于金星探索等任务至关重要。这些实例凸显了 SiC 在提高效能、降低系统成本和支援全球永续发展目标方面的潜力，使其成为向绿色未来转型的关键驱动力。

动力学

航太和国防应用领域崛起

不断增长的航太和国防应用是碳化硅 (SiC) 半导体市场的重要驱动力，因为基于 SiC 的设备具有对现代航太和国防系统至关重要的独特优势。这些产业需要能够在高温、高压和恶劣环境等极端条件下运作的高性能、可靠、高效的电子元件。

例如，根据德国PCIM Europe 2024年的数据，分析了SiC技术在航太应用中的潜在极限，提出了CoolCAD Electronics为在高空和太空环境中使用而开发的解决方案。碳化硅功率装置已成为传统硅基元件的潜在优质替代品，为太空船和电动飞机上的高功率应用带来了巨大益处。

此外，2024 年，美国海军航空电子专家希望诺斯罗普·格鲁曼公司能够长期稳定地供应海军 E-2D 先进鹰眼舰载监视机上雷达电力电子设备所需的碳化硅元件。碳化硅提供比硅 MOSFET 和绝缘栅双极电晶体 (IGBT) 更好的开关性能，并且随温度的变化最小。

高功率应用需求不断成长

由于碳化硅 (SiC) 具有高热导率、高击穿电压和能源效率等优异的性能，高功率应用的需求不断增长，极大地推动了碳化硅 (SiC) 半导体市场的发展。这些特性使 SiC 半导体成为电动车 (EV)、再生能源系统和工业电源的理想选择。

例如，2025 年，美国太空总署格伦研究中心的工程师们开发了能够承受极端条件的碳化硅 (SiC) 电路，包括长达数千小时的 930°F (500°C) 高温以及在 -310°F (-190°C) 至 1,490°F (812°C) 的温度范围内运行。这些进步对于金星探索至关重要，并在航太、电动车和再生能源系统领域有更广泛的应用，其中 SiC 处理更高电压、温度和辐射的能力提供了显着的性能和效率优势。

此外，特斯拉率先在其 Model 3 的逆变器中使用碳化硅（SiC）MOSFET，与传统硅基电晶体相比，显着提高了能源效率并透过最大限度地减少功率损耗有助于增加行驶里程；这使得 Model 3 成为首批在动力系统中广泛采用 SiC 技术的电动车之一。此外，西门子还将SiC元件整合到工业驱动器中，从而提高了性能并降低了能耗。

投资成本高

由于生产流程复杂且资源密集，碳化硅（SiC）半导体的製造成本高是重大限制因素。 SiC晶片比传统硅晶片更昂贵，6吋SiC晶片的成本约为1,000至2,000美元，而硅晶片的成本为25至50美元。这种巨大的成本差异源自于复杂的晶体生长过程（昇华）和更高的缺陷率，导致产量较低。

例如，意法半导体和 Wolfspeed 因成本高而在扩大 SiC 生产方面面临挑战，从而影响了电动车 (EV) 和可再生能源系统的功率设备的定价。因此，Lucid Motors 和 Rivian 等电动车製造商在采用 SiC 逆变器和动力系统时可能会遇到更高的生产成本。

The Silicon Carbide (SiC) semiconductor market is experiencing robust growth, driven by the increasing demand for high-power, high-efficiency applications. SiC semiconductors offer superior properties over traditional silicon, including higher thermal conductivity, greater energy efficiency, and the ability to operate at higher voltages and temperatures. The market is gaining momentum across industries such as electric vehicles (EVs), renewable energy, aerospace, and industrial power electronics.

For instance, in 2024, STMicroelectronics, introducing its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. The Generation 4 technology brings new benchmarks in power efficiency, power density and robustness. While serving the needs of both the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains.

Additionally, in 2025, Infineon Technologies AG, has made significant progress on its 200 mm silicon carbide (SiC) roadmap. The company will already release the first products based on the advanced 200 mm SiC technology to customers in Q1 2025. The products, manufactured in Villach, Austria, provide first-class SiC power technology for high-voltage applications, including renewable energies, trains, and electric vehicles.

Moreover, the renewable energy sector benefits significantly from SiC semiconductors. For example, Infineon Technologies supplies SiC solutions for solar inverters, reducing energy losses and improving power density. The aerospace industry also sees advancements, with NASA's Glenn Research Center developing SiC circuits capable of operating at 930°F (500°C) for thousands of hours, critical for missions like Venus exploration. These instances highlight SiC's potential in enhancing performance, reducing system costs, and supporting global sustainability goals, making it a key driver in the transition toward a greener future.

Dynamics

Rising in Aerospace and Defense Applications

The rising aerospace and defense applications are significant drivers of the Silicon Carbide (SiC) Semiconductor Market, as SiC-based devices offer unique advantages that are critical for modern aerospace and defense systems. These industries demand high-performance, reliable, and efficient electronic components that can operate under extreme conditions, such as high temperatures, high voltages, and harsh environments.

For instance, according to PCIM Europe in Germany, 2024, analyzes the potential limits of SiC technology in aerospace applications, proposing the solutions developed by CoolCAD Electronics for usage in high-altitude and space environments. Silicon carbide power devices have emerged as a potentially superior alternative to conventional silicon-based components, offering substantial benefits for high-power applications on spacecraft and electric aircraft.

Additionally, in 2024, U.S. Navy avionics experts are looking to Northrop Grumman Corp. to ensure a long-term and steady supply of silicon carbide components for radar power electronics aboard the Navy's E-2D Advanced Hawkeye carrier-based surveillance aircraft. Silicon Carbide provides better switching performance than silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature.

Growing Demand for High-Power Applications

The growing demand for high-power applications significantly drives the Silicon Carbide (SiC) semiconductor market due to SiC's superior properties, including high thermal conductivity, high breakdown voltage, and energy efficiency. These attributes make SiC semiconductors ideal for electric vehicles (EVs), renewable energy systems, and industrial power supplies.

For instance, in 2025, Engineers at NASA's Glenn Research Center have developed silicon carbide (SiC) circuits capable of withstanding extreme conditions, including 930°F (500°C) for thousands of hours and operating across a -310°F (-190°C) to 1,490°F (812°C) temperature range. These advancements are crucial for Venus exploration and have broader applications in aerospace, electric vehicles, and renewable energy systems, where SiC's ability to handle higher voltages, temperatures, and radiation offers significant performance and efficiency benefits.

Additionally, Tesla pioneered the use of Silicon Carbide (SiC) MOSFETs in the inverters of its Model 3, significantly improving energy efficiency and contributing to increased driving range by minimizing power losses compared to traditional silicon-based transistors; this made the Model 3 one of the first electric vehicles to widely adopt SiC technology in its powertrain. Moreover, Siemens integrates SiC components in industrial drives, enhancing performance and lowering energy consumption.

High Investment Costs

The high manufacturing cost of Silicon Carbide (SiC) semiconductors is a significant restraint due to the complex and resource-intensive production processes. SiC wafers are more expensive than traditional silicon wafers, with 6-inch SiC wafers costing around $1,000-$2,000, compared to $25-$50 for silicon wafers. This substantial cost difference arises from the intricate crystal growth process (sublimation) and higher defect rates, resulting in lower yields.

For instance, STMicroelectronics and Wolfspeed face challenges in scaling SiC production due to these high costs, affecting the pricing of power devices for electric vehicles (EVs) and renewable energy systems. Therefore, EV manufacturers like Lucid Motors and Rivian may encounter higher production expenses when adopting SiC inverters and powertrains.

Segment Analysis

The global silicon carbide (sic) semiconductor market is segmented based on type, wafer size, technology, application and region.

SiC Power Modules: Leading the Charge in High-Efficiency Semiconductor Applications

The SiC power modules segment dominates the Silicon Carbide (SiC) semiconductor market due to its ability to handle higher voltages, temperatures, and switching frequencies with improved energy efficiency and power density compared to silicon-based modules. These advantages make SiC power modules ideal for electric vehicles (EVs), renewable energy systems, and industrial power applications, where efficiency and compact designs are critical.

For instance, in 2023, Mitsubishi Electric Corporation had agreed with Coherent Corp to invest USD 500 million (approx. 75 billion yen1) in a new silicon carbide (SiC) business to be carved out from Coherent, aiming to expand its SiC power device business by strengthening vertical collaboration with Coherent, who has been a supplier of SiC substrates to Mitsubishi Electric.

Additionally, in 2022, Fuji Electric Co., announce that it has made a decision to carry out capital investment in Fuji Electric Tsugaru Semiconductor Co., Ltd, one of power semiconductor production bases, for an increase in the production of SiC power semiconductors. Mass production is planned to begin in fiscal 2024. These real-world applications demonstrate how SiC power modules lead the market by supporting the global push for energy-efficient, high-performance power solutions across key industries.

Geographical Penetration

Advancing EVs, Renewables, and Aerospace in North America

North America dominates the Silicon Carbide (SiC) semiconductor market due to the presence of leading industry players, robust electric vehicle (EV) adoption, and significant investments in renewable energy and aerospace sectors. The region's focus on energy efficiency, advanced manufacturing, and technological innovation drives the demand for SiC semiconductors in high-power applications.

For instance, Wolfspeed, a key player based in the U.S., opened the world's largest SiC materials factory in New York to meet the growing demand for SiC power devices. In the EV sector, Tesla, headquartered in California, uses SiC MOSFETs in its Model 3 inverters, improving energy efficiency and extending vehicle range.

The aerospace industry also plays a pivotal role, with NASA's Glenn Research Center developing SiC circuits capable of withstanding extreme temperatures for space exploration missions, such as those targeting Venus. These developments underline North America's leadership in leveraging SiC technology across diverse, high-growth sectors.

Competitive Landscape

The major global players in the market include Infineon Technologies, Littelfuse, ON Semiconductor, Wolfspeed Inc, Fuji Electric, X-FAB, GeneSiC Semiconductor, Mitsubishi Electric, STMicroelectronics, ROHM Semiconductor, and among others.

Key Developments

In 2023, Vitesco Technologies, a leading international manufacturer of modern drive technologies and electrification solutions, has secured strategically important capacities in energy-efficient silicon carbide power semiconductors through a long-term supply partnership with ROHM - worth over one billion US dollars until 2030.
In 2025, Onsemi, had completed its acquisition of the Silicon Carbide Junction Field-Effect Transistor (SiC JFET) technology business, including the United Silicon Carbide subsidiary, from Qorvo for $115 million in cash. The addition of SiC JFET technology will complement onsemi's extensive EliteSiC power portfolio and enable the company to address the need for high energy efficiency and power density in the AC-DC stage in power supply units for AI data centers.

By Type

SiC Discrete Devices
SiC Power Modules
SiC Substrates and Wafers
Others

By Wafer Size

2-inch Wafers
4-inch Wafers
6-inch Wafers
8-inch Wafers

By Technology

Planar SiC Technology
Trench SiC Technology

By Application

Automotive
Consumer Electronics
Industrial
Aerospace & Defense
Telecommunications
Energy & Power
Others

By Region

North America
- US
- Canada
- Mexico
Europe
- Germany
- UK
- France
- Italy
- Spain
- Rest of Europe
South America
- Brazil
- Argentina
- Rest of South America
Asia-Pacific
- China
- India
- Japan
- Australia
- Rest of Asia-Pacific
Middle East and Africa

Why Purchase the Report?

To visualize the global silicon carbide (sic) semiconductor market segmentation based on type, wafer size, technology, application and region.
Identify commercial opportunities by analyzing trends and co-development.
Excel data sheet with numerous data points at the silicon carbide (sic) semiconductor market level for all segments.
PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
Product mapping available as excel consisting of key products of all the major players.

The global Silicon Carbide (SiC) Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

Manufacturers/ Buyers
Industry Investors/Investment Bankers
Research Professionals
Emerging Companies

1. Methodology and Scope

1.1. Research Methodology
1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

3.1. Snippet by Type
3.2. Snippet by Wafer Size
3.3. Snippet by Technology
3.4. Snippet by Application
3.5. Snippet by Region

4. Dynamics

4.1. Impacting Factors
- 4.1.1. Drivers
  - 4.1.1.1. Rising in Aerospace and Defense Applications
  - 4.1.1.2. Growing Demand for High-Power Applications
- 4.1.2. Restraints
  - 4.1.2.1. High Investment Costs
- 4.1.3. Opportunity
- 4.1.4. Impact Analysis

5. Industry Analysis

5.1. Porter's Five Force Analysis
5.2. Supply Chain Analysis
5.3. Pricing Analysis
5.4. Regulatory Analysis
5.5. Sustainable Analysis
5.6. DMI Opinion

6. By Type

6.1. Introduction
- 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 6.1.2. Market Attractiveness Index, By Type
6.2. SiC Discrete Devices*
- 6.2.1. Introduction
- 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
6.3. SiC Power Modules
6.4. SiC Substrates and Wafers
6.5. Others

7. By Wafer Size

7.1. Introduction
- 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 7.1.2. Market Attractiveness Index, By Wafer Size
7.2. 2-inch Wafers*
- 7.2.1. Introduction
- 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
7.3. 4-inch Wafers
7.4. 6-inch Wafers
7.5. 8-inch Wafers

8. By Technology

8.1. Introduction
- 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 8.1.2. Market Attractiveness Index, By Technology
8.2. Planar SiC Technology*
- 8.2.1. Introduction
- 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
8.3. Trench SiC Technology

9. By Application

9.1. Introduction
- 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 9.1.2. Market Attractiveness Index, By Application
9.2. Automotive*
- 9.2.1. Introduction
- 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
9.3. Consumer Electronics
9.4. Industrial
9.5. Aerospace & Defense
9.6. Telecommunications
9.7. Energy & Power
9.8. Others

10. Sustainability Analysis

10.1. Environmental Analysis
10.2. Economic Analysis
10.3. Governance Analysis

11. By Region

11.1. Introduction
- 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
- 11.1.2. Market Attractiveness Index, By Region
11.2. North America
- 11.2.1. Introduction
- 11.2.2. Key Region-Specific Dynamics
- 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.2.7.1. US
  - 11.2.7.2. Canada
  - 11.2.7.3. Mexico
11.3. Europe
- 11.3.1. Introduction
- 11.3.2. Key Region-Specific Dynamics
- 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.3.7.1. Germany
  - 11.3.7.2. UK
  - 11.3.7.3. France
  - 11.3.7.4. Italy
  - 11.3.7.5. Spain
  - 11.3.7.6. Rest of Europe
11.4. South America
- 11.4.1. Introduction
- 11.4.2. Key Region-Specific Dynamics
- 11.4.3. Key Region-Specific Dynamics
- 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.4.8.1. Brazil
  - 11.4.8.2. Argentina
  - 11.4.8.3. Rest of South America
11.5. Asia-Pacific
- 11.5.1. Introduction
- 11.5.2. Key Region-Specific Dynamics
- 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.5.7.1. China
  - 11.5.7.2. India
  - 11.5.7.3. Japan
  - 11.5.7.4. Australia
  - 11.5.7.5. Rest of Asia-Pacific
11.6. Middle East and Africa
- 11.6.1. Introduction
- 11.6.2. Key Region-Specific Dynamics
- 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Wafer Size
- 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application

12. Competitive Landscape

12.1. Competitive Scenario
12.2. Market Positioning/Share Analysis
12.3. Mergers and Acquisitions Analysis

13. Company Profiles

13.1. Infineon Technologies*
- 13.1.1. Company Overview
- 13.1.2. Product Portfolio and Description
- 13.1.3. Financial Overview
- 13.1.4. Key Developments
13.2. Littelfuse
13.3. ON Semiconductor
13.4. Wolfspeed Inc
13.5. Fuji Electric
13.6. X-FAB
13.7. GeneSiC Semiconductor
13.8. Mitsubishi Electric
13.9. STMicroelectronics
13.10. ROHM Semiconductor

LIST NOT EXHAUSTIVE

14. Appendix

14.1. About Us and Services
14.2. Contact Us

02-2729-4219

+886-2-2729-4219

License/价格

全球碳化硅 (SiC) 半导体市场 - 2025 至 2032 年

Global Silicon Carbide (SiC) Semiconductor Market - 2025-2032

目录

第 1 章：方法与范围

第 2 章：定义与概述

第 3 章：执行摘要

第 4 章：动态

第五章：产业分析

第 6 章：按类型

第 7 章：依晶圆尺寸

第 8 章：按技术

第九章：按应用

第 10 章：可持续性分析

第 11 章：按地区

第 12 章：竞争格局

第 13 章：公司简介

第 14 章：附录