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市场调查报告书
商品编码
1524293

高电子迁移率电晶体市场 - 依材料类型(氮化镓、碳化硅、砷化镓)、垂直产业(消费性电子、汽车、工业、A&D)及预测,2024 - 2032 年

High Electron Mobility Transistor Market - By Material Type (Gallium Nitride, Silicon Carbide, Gallium Arsenide), By Industry Vertical (Consumer Electronics, Automotive, Industrial, A&D) & Forecast, 2024 - 2032

出版日期: | 出版商: Global Market Insights Inc. | 英文 230 Pages | 商品交期: 2-3个工作天内

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简介目录

由于对高速电子设备的需求不断增加,从 2024 年到 232 年,全球高电子迁移率电晶体市场规模将以超过 5% 的复合年增长率成长。

对节能解决方案的日益重视正在成为市场的主要驱动因素。根据IEA统计,自能源危机爆发以来,超过70%的能源消费国实施或加强了能源效率政策。随着世界各地的行业优先考虑永续发展和环境责任,对具有最佳能源效率的电子设备的需求不断增加。

各种应用对高效能、低功耗的 HEMT 的需求越来越大。这种趋势在电信、航空航太和汽车等能源效率至关重要的行业中尤其明显。此外,政府促进节能的法规和激励措施进一步鼓励 HEMT 的采用,从而导致全球市场显着成长。

高电子迁移率电晶体市场根据材料类型、行业和地区进行分类。

到 2032 年,碳化硅 (SiC) 领域将出现可观的成长,因为基于 SiC 的 HEMT 具有比传统材料更高的击穿电压、更宽的带隙和更好的导热性等改进的性能特征。这些固有特性使 SiC HEMT 非常适合电力电子应用,特别是在效率和可靠性至关重要的高温下。随着行业优先考虑能源效率和功率密度,对产品的需求在不久的将来可能会进一步增长。

由于汽车产业随着电动车、自动驾驶技术和先进驱动器的普及而发生的快速变化,汽车产业的高电子迁移率电晶体市场将在 2032 年之前稳定成长。 -辅助系统(ADAS)。 HEMT 透过促进电力推进系统、车辆充电系统和车辆间通讯网路的高效电源模组和射频放大器的开发,在实现这些进步方面发挥关键作用。随着汽车产业以前所未有的速度采用电气化和互联化,需求将持续成长。

到 2032 年,欧洲高电子迁移率电晶体产业将以合理的速度成长,这得益于广泛的研发活动、政府措施以及产业参与者和学术机构之间的策略合作所支持的强大半导体产业生态系统。此外,汽车行业严格的能源效率和减排法规加速了欧洲各地电动和混合动力汽车中 HEMT 的采用。由于有利的市场条件和有利的监管环境,欧洲可望保持在全球HEMT市场的领先地位。

目录

第 1 章:方法与范围

第 2 章:执行摘要

第 3 章:产业洞察

  • 产业生态系统分析
  • 利润率分析
  • 技术与创新格局
  • 专利分析
  • 重要新闻和倡议
  • 监管环境
  • 衝击力
  • 成长动力
    • 对高速通讯系统的需求
    • 无线技术的进步
    • 航太和国防应用
    • 汽车电子的新兴应用
    • 物联网 (IoT) 的成长
  • 产业陷阱与挑战
    • 技术复杂性
    • 製造复杂且昂贵
  • 成长潜力分析
  • 波特的分析
  • PESTEL分析

第 4 章:竞争格局

  • 介绍
  • 公司市占率分析
  • 竞争定位矩阵
  • 战略展望矩阵

第 5 章:市场估计与预测:依材料类型,2018 年 - 2032 年

  • 主要趋势
  • 氮化镓(GaN)
  • 碳化硅(SiC)
  • 砷化镓 (GaAs)
  • 其他的

第 6 章:市场估计与预测:按产业垂直划分,2018 年 - 2032 年

  • 主要趋势
  • 消费性电子产品
  • 汽车
  • 工业的
  • 航太和国防
  • 其他的

第 7 章:市场估计与预测:按地区划分,2018 年 - 2032 年

  • 主要趋势
  • 北美洲
    • 我们
    • 加拿大
  • 欧洲
    • 英国
    • 德国
    • 法国
    • 义大利
    • 西班牙
    • 俄罗斯
    • 欧洲其他地区
  • 亚太地区
    • 中国
    • 印度
    • 日本
    • 韩国
    • 澳新银行
    • 亚太地区其他地区
  • 拉丁美洲
    • 巴西
    • 墨西哥
    • 拉丁美洲其他地区
  • MEA
    • 阿联酋
    • 沙乌地阿拉伯
    • 南非
    • MEA 的其余部分

第 8 章:公司简介

  • NXP Semiconductors
  • ST Microelectronics
  • Texas Instruments
  • Infineon Technologies
  • Renesas Electronics
  • Intel Corporation
  • Sumitomo Electric Device Innovations, Inc.
  • Wolfspeed
  • Toshiba Corporation
  • Analog Devices, Inc.
简介目录
Product Code: 8800

Global High Electron Mobility Transistor Market size will grow at a CAGR of more than 5% from 2024 to 232 due to increasing demand for high-speed electronic devices.

Growing emphasis on energy-efficient solutions is becoming a major driving factor in the market. According to the IEA, since the beginning of the energy crisis, more than 70% of energy-consuming countries have implemented or strengthened efficiency policies. As industries around the world prioritize sustainability and environmental responsibility, the demand for electronic devices that offer the best in energy efficiency is increasing.

HEMTs with high performance and low power consumption are increasingly in demand in various applications. This trend is particularly evident in industries such as telecommunications, aerospace, and automotive, where energy efficiency is paramount. Additionally, government regulations and incentives to promote energy conservation are further encouraging the adoption of HEMTs, leading to significant growth in the global market.

High electron mobility transistor Market is classified based on material type, industry, and region.

The Silicon Carbide (SiC) segment will grow commendably through 2032 as SiC-based HEMTs offer improved performance characteristics such as higher breakdown voltage, wider band gap, and better thermal conductivity than conventional materials. These inherent properties make SiC HEMTs well-suited for power electronics applications, especially at high temperatures where efficiency and reliability are of utmost importance. With the industry prioritizing energy efficiency and power density, the demand for products could record further growth in the near future.

The High Electron Mobility Transistor Market from the automotive sector segment will grow steadily through 2032 due to rapid changes in the automotive industry with the proliferation of electric vehicles, autonomous driving technologies, and advanced drivers. -assistance systems (ADAS). HEMTs play a critical role in enabling these advances by facilitating the development of high-efficiency power modules and RF amplifiers for electric propulsion systems, vehicle charging systems, and vehicle-to-vehicle communication networks. As the automotive industry adopts electrification and connectivity at an unprecedented rate, demand will continue to grow.

Europe high electron mobility transistor industry will grow at a reasonable pace through 2032, driven by a strong semiconductor industry ecosystem supported by extensive R&D activities, government initiatives, and strategic collaboration between industry players and academic institutions. In addition, strict energy efficiency and emission reduction regulations in the automotive industry have accelerated the adoption of HEMTs in electric and hybrid vehicles across Europe. Thanks to favorable market conditions and a favorable regulatory environment, Europe is expected to maintain its leading position in the global HEMT market.

Table of Contents

Chapter 1 Methodology & Scope

  • 1.1 Market scope & definitions
  • 1.2 Base estimates & calculations
  • 1.3 Forecast calculations
  • 1.4 Data sources
    • 1.4.1 Primary
    • 1.4.2 Secondary
      • 1.4.2.1 Paid sources
      • 1.4.2.2 Public sources

Chapter 2 Executive Summary

  • 2.1 Industry 360° synopsis, 2018 - 2032

Chapter 3 Industry Insights

  • 3.1 Industry ecosystem analysis
  • 3.2 Profit margin analysis
  • 3.3 Technology & innovation landscape
  • 3.4 Patent analysis
  • 3.5 Key news & initiatives
  • 3.6 Regulatory landscape
  • 3.7 Impact forces
  • 3.8 Growth drivers
    • 3.8.1 Demand for high-speed communication systems
    • 3.8.2 Advancements in wireless technologies
    • 3.8.3 Aerospace and defense applications
    • 3.8.4 Emerging applications in automotive electronics
    • 3.8.5 Growth of internet of things (IoT)
  • 3.9 Industry pitfalls & challenges
    • 3.9.1 Technological complexity
    • 3.9.2 Complex and expensive manufacturing
  • 3.10 Growth potential analysis
  • 3.11 Porter's analysis
    • 3.11.1 Supplier power
    • 3.11.2 Buyer power
    • 3.11.3 Threat of new entrants
    • 3.11.4 Threat of substitutes
    • 3.11.5 Industry rivalry
  • 3.12 PESTEL analysis

Chapter 4 Competitive Landscape, 2023

  • 4.1 Introduction
  • 4.2 Company market share analysis
  • 4.3 Competitive positioning matrix
  • 4.4 Strategic outlook matrix

Chapter 5 Market Estimates & Forecast, By Material Type, 2018 - 2032 (USD Billion)

  • 5.1 Key trends
  • 5.2 Gallium nitride (GaN)
  • 5.3 Silicon carbide (SiC)
  • 5.4 Gallium arsenide (GaAs)
  • 5.5 Others

Chapter 6 Market Estimates & Forecast, By Industry Vertical, 2018 - 2032 (USD Billion)

  • 6.1 Key trends
  • 6.2 Consumer electronics
  • 6.3 Automotive
  • 6.4 Industrial
  • 6.5 Aerospace and defense
  • 6.6 Others

Chapter 7 Market Estimates & Forecast, By Region, 2018 - 2032 (USD Billion)

  • 7.1 Key trends
  • 7.2 North America
    • 7.2.1 U.S.
    • 7.2.2 Canada
  • 7.3 Europe
    • 7.3.1 UK
    • 7.3.2 Germany
    • 7.3.3 France
    • 7.3.4 Italy
    • 7.3.5 Spain
    • 7.3.6 Russia
    • 7.3.7 Rest of Europe
  • 7.4 Asia Pacific
    • 7.4.1 China
    • 7.4.2 India
    • 7.4.3 Japan
    • 7.4.4 South Korea
    • 7.4.5 ANZ
    • 7.4.6 Rest of Asia Pacific
  • 7.5 Latin America
    • 7.5.1 Brazil
    • 7.5.2 Mexico
    • 7.5.3 Rest of Latin America
  • 7.6 MEA
    • 7.6.1 UAE
    • 7.6.2 Saudi Arabia
    • 7.6.3 South Africa
    • 7.6.4 Rest of MEA

Chapter 8 Company Profiles

  • 8.1 NXP Semiconductors
  • 8.2 ST Microelectronics
  • 8.3 Texas Instruments
  • 8.4 Infineon Technologies
  • 8.5 Renesas Electronics
  • 8.6 Intel Corporation
  • 8.7 Sumitomo Electric Device Innovations, Inc.
  • 8.8 Wolfspeed
  • 8.9 Toshiba Corporation
  • 8.10 Analog Devices, Inc.