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绝缘体上碳化硅 (SiCOI) 薄膜市场 - 按基材、晶圆尺寸、技术、应用和预测,2024 年至 2032 年SiC-on-Insulator (SiCOI) Film Market - By Substrate, By Wafer Size, By Technology, By Application & Forecast, 2024 - 2032 |
在半导体和电子产业日益普及的推动下,绝缘体上碳化硅 (SiCOI) 薄膜市场规模预计 2024 年至 2032 年复合年增长率将超过 90%。例如,2023 年 10 月,Soitec 开设了一家新的电动车碳化硅晶片生产设施。它还声称,其专利製造技术允许更频繁地使用碳化硅基板,从而显着减少晶圆製造过程中的二氧化碳排放。与传统硅基基板相比,SiCOI 薄膜具有卓越的电气性能和热性能,使其成为电力电子、射频设备和感测器等高性能应用的理想选择。这种能力在需要紧凑、节能解决方案的领域尤其有利,例如电动车、再生能源系统和电信。
SiCOI 薄膜生产的可扩展性和成本效益也促进了外延生长和晶圆键合等製造技术的进步。这些发展降低了生产成本,并扩大了将碳化硅材料整合到主流半导体製造流程的可行性。越来越多地采用宽频隙材料来解决电源管理和能源效率的挑战也将推动市场成长。
整个产业分为衬底、晶圆尺寸、技术、应用和地区。
在应用方面,由于电动和混合动力车对高效电力电子元件的需求不断增加,预计到2032年,汽车领域的绝缘体上碳化硅薄膜市场将大幅成长。这些薄膜利用卓越的电气特性,为汽车应用中的电源转换和管理系统提供了显着的优势。
基于技术,智慧切割领域的 SiCOI 薄膜市场由于其在实现精确和可扩展製造流程方面的强大作用,将在 2024 年至 2032 年期间产生可观的收入。智慧切割技术涉及使用离子注入和晶圆键合技术将超薄碳化硅层转移到二氧化硅等绝缘基板上。该方法还能够生产具有客製化厚度和性能的 SiCOI 薄膜,同时优化高频和高功率电子设备的性能。
亚太地区绝缘体上碳化硅薄膜产业预计到 2032 年将呈现可观的成长速度。中国、日本和韩国等国家推动再生能源采用和电动车製造的政府措施正在加速对 SiCOI 薄膜的需求,这有助于提高多种应用的能源效率和性能。
SiC-on-Insulator (SiCOI) film market size is estimated to register over 90% CAGR from 2024 to 2032, driven by increasing adoption in the semiconductor and electronics industries. For instance, in October 2023, Soitec opened a new production facility for silicon carbide chips for electric vehicles. It also claimed that its patented manufacturing technology allowed the more frequent use of SiC substrates for significantly reducing CO2 emissions from wafer manufacturing. SiCOI films offer superior electrical and thermal properties compared to traditional silicon-based substrates, making them ideal for high-performance applications in power electronics, RF devices, and sensors. This capability is particularly advantageous in sectors demanding compact, energy-efficient solutions, such as electric vehicles, renewable energy systems, and telecommunications.
The scalability and cost-effectiveness of SiCOI film production are also improving the advancements in manufacturing techniques like epitaxial growth and wafer bonding. These developments lower production costs and expand the feasibility of integrating SiC materials into mainstream semiconductor fabrication processes. The increasing adoption of wide bandgap materials to address challenges in power management and energy efficiency will also drive market growth.
The overall industry is classified into substrate, wafer size, technology, application, and region.
In terms of application, the SiC-on-insulator film market from the automotive segment is anticipated to witness substantial growth through 2032 due to the increasing demand for high-efficiency power electronics in electric and hybrid vehicles. These films by leveraging superior electrical properties offer significant advantages in power conversion and management systems within automotive applications.
Based on technology, the SiCOI film market from the smart cut segment will generate notable revenue during 2024-2032 owing to its robust role in enabling precise and scalable manufacturing processes. Smart cut technology involves the transfer of ultra-thin SiC layers onto an insulating substrate, such as silicon dioxide, using ion implantation and wafer bonding techniques. This method also enables the production of SiCOI films with tailored thickness and properties while optimizing performance in high-frequency and high-power electronic devices.
Asia Pacific SiC-on-insulator film industry is slated to depict a decent growth rate through 2032. This is attributed to rapid industrialization and urbanization, leading to increased demand for advanced electronic devices and infrastructure. Government initiatives promoting renewable energy adoption and electric vehicle manufacturing in countries like China, Japan, and South Korea are accelerating the demand for SiCOI films, which help improve energy efficiency and performance in several applications.