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市场调查报告书
商品编码
1664840
雷射二极体市场机会、成长动力、产业趋势分析与 2025 - 2034 年预测Laser Diode Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
2024 年全球雷射二极体市场价值为 77 亿美元,预计 2025 年至 2034 年期间的复合年增长率将达到 14.4%。这些设备具有体积小、节能和精确调製功能的特点,使其成为电信、医疗保健和消费性电子等众多产业不可或缺的一部分。
这一市场成长主要得益于对先进资料传输技术的需求不断增长、医疗雷射的创新以及雷射二极体在工业自动化中的广泛应用。向小型化、节能电子产品的转变进一步推动了雷射二极体技术的进步。大量的研发投入,加上各领域不断增长的需求,确保了未来几年市场稳定扩张。
市场范围 | |
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起始年份 | 2024 |
预测年份 | 2025-2034 |
起始值 | 77亿美元 |
预测值 | 294亿美元 |
复合年增长率 | 14.4% |
根据操作模式,市场分为单模雷射二极体和多模雷射二极体。预计多模式市场将占据主导地位,到 2034 年将达到 146 亿美元。它们在工业应用和医疗设备中的应用越来越广泛,凸显了它们在商业和工业领域日益增长的相关性。
在掺杂材料方面,市场包括红外线砷化铝镓、砷化镓、磷化铝镓铟、氮化铟镓、氮化镓等。砷化镓成为领先细分市场,预估预测期内复合年增长率为 16.2%。其独特的特性,例如高效的光子产生和高量子效率,使其成为雷射二极体的首选材料。砷化镓在高温下表现良好,增强了其在各行业的应用。
在北美,美国占据区域市场主导地位,到 2024 年占据 80% 以上的份额。对高速通讯、先进製造流程和尖端应用的关注确保美国仍然是全球雷射二极体市场的重要贡献者。
The Global Laser Diode Market, valued at USD 7.7 billion in 2024, is projected to grow at an impressive CAGR of 14.4% from 2025 to 2034. A laser diode is a semiconductor device that generates coherent light through stimulated emission, utilizing materials such as gallium arsenide (GaAs). These devices offer compact size, energy efficiency, and precise modulation capabilities, making them integral to a wide array of industries including telecommunications, healthcare, and consumer electronics.
This market growth is primarily driven by the increasing demand for advanced data transmission technologies, innovations in medical lasers, and the expanding use of laser diodes in industrial automation. The shift towards miniaturized, energy-efficient electronics further propels advancements in laser diode technology. Substantial investments in research and development, coupled with rising demand across various sectors, ensure a steady expansion of the market in the coming years.
Market Scope | |
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Start Year | 2024 |
Forecast Year | 2025-2034 |
Start Value | $7.7 Billion |
Forecast Value | $29.4 Billion |
CAGR | 14.4% |
Based on mode of operation, the market is segmented into single-mode and multi-mode laser diodes. The multi-mode segment is expected to dominate, reaching USD 14.6 billion by 2034. These diodes are recognized for their ability to support multiple light propagation modes, enabling high-power output. Their growing adoption in industrial applications and medical equipment underscores their increasing relevance in both commercial and industrial sectors.
In terms of doping material, the market includes infrared gallium aluminum arsenide, gallium arsenide, aluminum gallium indium phosphide, indium gallium nitride, gallium nitride, and others. Gallium arsenide emerges as the leading segment, anticipated to grow at a CAGR of 16.2% during the forecast period. Its unique properties, such as efficient photon generation and high quantum efficiency, make it a preferred material for laser diodes. Gallium arsenide's ability to perform well at elevated temperatures enhances its application across various industries.
In North America, the United States dominates the regional market, accounting for over 80% of the share in 2024. The country's strong technological ecosystem, investments in innovation, and advancements in semiconductor technologies drive demand for laser diodes across multiple sectors. The focus on high-speed communication, advanced manufacturing processes, and cutting-edge applications ensures that the US remains a significant contributor to the global laser diode market.