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市场调查报告书
商品编码
1871230
汽车栅极驱动器IC市场机会、成长驱动因素、产业趋势分析及2025-2034年预测Automotive Gate Driver ICs Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
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2024 年全球汽车闸极驱动器 IC 市场价值为 14 亿美元,预计到 2034 年将以 5.2% 的复合年增长率成长至 23 亿美元。

汽车产业的快速电气化仍然是推动闸极驱动积体电路需求的主要因素之一。随着电动车在新生产线上占据主导地位,对马达、电池系统和逆变器的精确控制需求日益增长。闸极驱动积体电路是管理功率电晶体的关键组件,能够提升效率、耐热性和开关性能,这对优化电动车的续航里程和可靠性至关重要。对零排放交通和全球碳中和目标的推动加速了电动车的普及,导致高性能、高压驱动积体电路的需求显着增加了40%。汽车製造商和零件製造商正在整合先进的电力电子技术,以提高续航里程、减少能量损耗,并提供符合政府永续发展要求的快速充电系统。
| 市场范围 | |
|---|---|
| 起始年份 | 2024 |
| 预测年份 | 2025-2034 |
| 起始值 | 14亿美元 |
| 预测值 | 23亿美元 |
| 复合年增长率 | 5.2% |
随着碳化硅 (SiC) 和氮化镓 (GaN) 半导体的应用,汽车产业正经历一场重大的技术变革,彻底改变了电力电子装置的设计方式。这些宽禁带材料相比传统硅材料,具有更高的能量效率、功率密度和更快的开关速度。随着汽车製造商开发出更紧凑、更有效率的平台,专为 SiC 和 GaN 装置优化的闸极驱动器对于下一代电动车架构而言变得至关重要。
2024年,隔离式闸极驱动器IC市场规模达到2.892亿美元,主要得益于电动和混合动力车的日益普及,这些车辆对安全性和性能提出了更高的电气隔离要求。这些IC能够实现功率级和控制级之间的可靠通信,同时还能处理高瞬态电压,因此在牵引逆变器、先进动力总成和能量管理系统中不可或缺。
2024年,硅MOSFET(标准硅MOSFET)市场规模达4.726亿美元。由于其成本效益高、供应链成熟且可靠性高,市场对这类积体电路的需求保持稳定。它们广泛应用于低压和中压汽车应用,例如车载充电器、辅助电源系统和汽车电子产品。其与传统设计的兼容性和稳定的性能使其成为汽车电气系统的首选。
2024年美国汽车闸极驱动器IC市场规模将达到3.88亿美元,预计2034年将以4.6%的复合年增长率成长。市场扩张的主要驱动力是联邦政府大力推行清洁能源技术政策以及电动车製造业的快速发展。美国本土汽车製造商正大力投资创新电动车动力总成系统,从而带动了对高效闸极驱动器IC的需求成长,这些IC需与高压牵引和充电解决方案中使用的SiC和GaN功率模组相容。
全球汽车闸极驱动器IC市场的主要参与者包括NXP Semiconductors NV、三菱电机株式会社、英飞凌科技股份公司、瑞萨电子株式会社、Monolithic Power Systems (MPS)、Power Integrations Inc.、博通公司、Analog Devices, Inc.、德州仪器公司、义大利化学仪器公司、东芝电子导体(onsemi)、罗姆半导体、Diodes Incorporated、MACOM Technology Solutions Inc.、Microchip Technology Inc.、Semtech Corporation、Vishay Intertechnology, Inc.和Skyworks Solutions, Inc.。这些领先企业正致力于创新、产品差异化和技术合作,以巩固其市场地位。各公司正大力投资开发针对SiC和GaN电晶体优化的IC,以提高电动车系统的效率、功率密度和热管理性能。与汽车製造商和一级供应商的策略合作,正推动高压IC更快地整合到牵引和充电系统中。
The Global Automotive Gate Driver ICs Market was valued at USD 1.4 Billion in 2024 and is estimated to grow at a CAGR of 5.2% to reach USD 2.3 Billion by 2034.

Rapid electrification across the automotive sector remains one of the main factors driving demand for gate driver ICs. As electric vehicles continue to dominate new production lines, the need for precise control of electric motors, battery systems, and inverters is growing. Gate driver ICs are fundamental components that manage power transistors, enhancing efficiency, heat resistance, and switching performance vital for optimizing electric vehicle range and reliability. The push for zero-emission transportation and global carbon-neutral goals has accelerated EV adoption, driving a significant 40% increase in demand for high-performance, high-voltage driver ICs. Automakers and component manufacturers are integrating advanced power electronics to improve range, reduce energy loss, and deliver faster charging systems that meet government sustainability mandates.
| Market Scope | |
|---|---|
| Start Year | 2024 |
| Forecast Year | 2025-2034 |
| Start Value | $1.4 Billion |
| Forecast Value | $2.3 Billion |
| CAGR | 5.2% |
The industry is undergoing a significant technological shift with the adoption of silicon carbide (SiC) and gallium nitride (GaN) semiconductors, transforming how power electronics are designed for vehicles. These wide-bandgap materials provide superior energy efficiency, greater power density, and faster switching speeds than traditional silicon. As automotive manufacturers develop more compact and high-efficiency platforms, gate drivers specifically optimized for SiC and GaN devices are becoming essential for next-generation EV architectures.
In 2024, the isolated gate driver ICs segment generated USD 289.2 million, supported by the growing use of electric and hybrid vehicles that demand strong electrical isolation for safety and performance. These ICs enable reliable communication between power and control stages while managing high transient voltages, making them indispensable in traction inverters, advanced powertrains, and energy management systems.
The silicon MOSFET (Standard Si MOSFET) segment generated USD 472.6 million in 2024. Demand for these ICs remains steady due to their cost efficiency, established supply chain, and high reliability. They are extensively utilized in low- and mid-voltage vehicle applications such as onboard chargers, auxiliary power systems, and automotive electronics. Their compatibility with conventional designs and consistent performance continues to make them a preferred option in automotive electrical systems.
United States Automotive Gate Driver ICs Market is USD 388 million in 2024, growing at a CAGR of 4.6% through 2034. Market expansion is driven by strong federal policies promoting clean energy technologies and the rapid growth of EV manufacturing. Domestic automakers are heavily investing in innovative EV powertrain systems, generating increased demand for efficient gate driver ICs compatible with SiC and GaN power modules used in high-voltage traction and charging solutions.
Prominent companies operating in the Global Automotive Gate Driver ICs Market include NXP Semiconductors N.V., Mitsubishi Electric Corporation, Infineon Technologies AG, Renesas Electronics Corporation, Monolithic Power Systems (MPS), Power Integrations Inc., Broadcom Inc., Analog Devices, Inc., Texas Instruments Incorporated, STMicroelectronics N.V., Toshiba Electronic Devices & Storage Corporation, ON Semiconductor Corporation (onsemi), ROHM Semiconductor, Diodes Incorporated, MACOM Technology Solutions Inc., Microchip Technology Inc., Semtech Corporation, Vishay Intertechnology, Inc., and Skyworks Solutions, Inc. Leading players in the Automotive Gate Driver ICs Market are focusing on innovation, product differentiation, and technology partnerships to reinforce their market position. Companies are investing heavily in the development of ICs optimized for SiC and GaN transistors to enhance efficiency, power density, and thermal management in EV systems. Strategic collaborations with automakers and Tier-1 suppliers are enabling faster integration of high-voltage ICs in traction and charging systems.