薄膜沉淀:趋势，重要课题，市场分析

本报告提供薄膜沉淀市场相关调查，关于成膜材料和镀膜设备的技术趋势，产品，用途，供应商解说。还有未来的用户需求，同时彙整薄膜沉淀设备的各领域的市场占有率与市场预测等资讯。

目录

第1章 简介

第2章 摘要整理

第3章 物理气相淀积

• 简介
• 溅镀技术
• 电浆技术
• 反应器设计
• 半导体加工
• 目标

第4章 化学气相淀积

• 简介
• 化学气相淀积(CVD)技术
  • APCVD
  • LPCVD
  • PECVD
  • HDPCVD
  • ALD

第5章 电化学累积

• 简介
• 反应器设计
• 课题
• 添加物
• 加工
• 铜阴极
• 湿铜种子层

第6章 成薄膜和薄膜特性

• 简介
• 电介质累积
• 金属沉淀

第7章 供应商的问题

• 简介
• 450mm加工
• 整合处理
• 铜
• 测量学
• ESD
• 参数测试

第8章 市场预测

• 简介
• 主要的问题
• 市场预测的前提条件
• 市场预测

图

CVD (Chemical Vapor Deposition) is used to deposit materials in various forms, including monocrystalline, polycrystalline, amorphous, and epitaxial. By subtypes, there are mainly LPCVD (low pressure), PECVD (plasma enhanced), and ALD. PVD deposition techniques include sputtering and eBeam and thermal evaporation.

The CVD process involves mixing the source material with one or more volatile precursors using a plasma to chemically interact and breakdown the source material. The processes use heat with higher pressures leading to a more reproducible film where the film thicknesses could be managed by time/power. These films are more stoichiometric, they are denser and are capable of growing higher quality insulator films. The PVD processing uses a solid precursor metal that is gasified through some electrical energy. The gasified atoms are then transferred to the substrate. These processes manages thicknesses using a quartz crystal rate monitor to control rate and thickness of the film.

ALD films are very conformal approaching 2000:1 aspect ratios, thus providing excellent step coverage over features. The process is repeatable and can grow thinner layers under 10nm thickness predictably. Films include Alumina oxide (AL2O3), Hafnium oxide (HfO2) and Titanium oxide (TiO2). Its use in the semiconductor industry has advanced ALD rapidly in recent years to develop thin, high-K gate dielectric layers.

The PECVD process offers good step coverage over features. Films include Silicon Dioxide (SiO2), Silicon Nitride (Si3N4) and lower stress Oxynitride (SiON) films. The PECVD films offer more flexibility than ALD with higher deposition rates leading to higher throughputs.

This report discusses the technology trends, products, applications, and suppliers of deposition materials and equipment. It also gives insights to suppliers for future user needs and should assist them in long range planning, new product development and product improvement. Market shares and a market forecast for each sector of thin film deposition tools is presented.

Table of Contents

Chapter 1 Introduction

Chapter 2 Executive Summary

Chapter 3 Physical Vapor Deposition

• 3.1. Introduction
• 3.2. Sputtering Technology
• 3.3. Plasma Technology
• 3.4. Reactor Designs
  • 3.4.1. Long-Throw Deposition
  • 3.4.2. Collimated Sputter Deposition
  • 3.4.3. Showerhead Deposition
  • 3.4.4. Ionized PVD
• 3.5. Semiconductor Processing
• 3.6. Targets

Chapter 4 Chemical Vapor Deposition

• 4.1. Introduction
• 4.2. Chemical Vapor Deposition (CVD) Techniques
  • 4.2.1. APCVD
  • 4.2.2. LPCVD
  • 4.2.3. PECVD
  • 4.2.4. HDPCVD
  • 4.2.5. ALD

Chapter 5 Electrochemical Deposition

• 5.1. Introduction
• 5.2. Reactor Design
• 5.3. Challenges
• 5.4. Additives
• 5.5. Processing
  • 5.5.1. Superfilling
  • 5.5.2. Aspect Ratios
• 5.6. Copper Cathodes
• 5.7. Wet Copper Seed-Layer

Chapter 6 Film Deposition And Film Properties

• 6.1. Introduction
• 6.2. Dielectric Deposition
  • 6.2.1. Silicon Dioxide
    • 6.2.1.1 Thermal CVD
    • 6.2.1.2 PECVD
    • 6.2.1.3 HDPCVD
  • 6.2.2. Silicon Nitride
    • 6.2.2.1 Thermal CVD
    • 6.2.2.2 PECVD
    • 6.2.2.3 HDPCVD
  • 6.2.3. High-K Dielectrics
  • 6.2.4. Low-K Dielectrics
• 6.3. Metal Deposition
  • 6.3.1. Aluminum
  • 6.3.2. Tungsten/Tungsten Silicide
  • 6.3.3. Titanium Nitride

Chapter 7 Vendor Issues

• 7.1. Introduction
• 7.2. 450mm Processing
• 7.3. Integrated Processing
• 7.4. Copper
• 7.5. Metrology
• 7.6. ESD
• 7.7. Parametric Test

Chapter 8 Market Forecast

• 8.1. Introduction
• 8.2. Key Issues
  • 8.2.1. Interconnect Architectures
    • 8.2.1.1 Logic (MPU/ASIC)
    • 8.2.1.2 Memory (Flash)
  • 8.2.2. Processing Trends
    • 8.2.2.1 Dielectric Film Trends
    • 8.2.2.2 Barrier Film Trends
    • 8.2.2.3 Conductor Film Trends
  • 8.2.3. Through-Si-Via (TSV), 3d Stacking Technology
    • 8.2.3.1 Introduction
    • 8.2.3.2 Through Si Via Technologies
  • 8.2.4. Emerging Interconnect Solutions
    • 8.2.4.1 Overview
    • 8.2.4.2 Cu Replacements
• 8.3. Market Forecast Assumptions
• 8.4. Market Forecast
  • 8.4.1. Chemical Vapor Deposition
  • 8.4.2. Physical Vapor Deposition
  • 8.4.3. Copper Electroplating Market
  • 8.4.4. Atomic Layer Deposition Market

FIGURES

• 3.1. Schematic Of Sputtering System
• 3.2. Magnetron Sputtering Design
• 3.3. Showerhead Reactor Design
• 3.4. Ionized PVD
• 4.1. APCVD Reactor
• 4.2. Tube CVD Reactor
• 4.3. HDPCVD Reactor
• 4.4. ALD Versus PVD Copper Barrier
• 5.1. Copper Electroplating System
• 7.1. Comparison Between Semiconductor and Equipment Revenues
• 8.1. Worldwide MCVD Market Shares
• 8.2. Worldwide DCVD Market Shares
• 8.3. Worldwide DCVD Market By Sectors
• 8.4. Worldwide HDHCVD Market Shares
• 8.5. Worldwide PECVD Market Shares
• 8.6. Worldwide SACVD Market Shares
• 8.7. Worldwide LPCVD Market Shares
• 8.8. Worldwide PVD Market Shares
• 8.9. Worldwide ECD Market Shares
• 8.10. Worldwide ALD Market Shares

TABLES

• 8.1. Cu Replacements And Native Device
• 8.2. Worldwide CVD Market Forecast
• 8.3. Worldwide MCVD Market Shares
• 8.4. Worldwide DCVD Market Shares
• 8.5. Worldwide HDPCVD Market Forecast
• 8.6. Worldwide HDPCVD Market Shares
• 8.7. Worldwide PECVD Market Forecast
• 8.8. Worldwide PECVD Market Shares
• 8.9. Worldwide SACVD Market Forecast
• 8.10. Worldwide SACVD Market Shares
• 8.11. Worldwide LPCVD Market Forecast
• 8.12. Worldwide LPCVD Market Shares
• 8.13. Worldwide PVD Market Forecast
• 8.14. Worldwide PVD Market Shares
• 8.15. Worldwide ECD Market Forecast
• 8.16. Worldwide ALD Market Forecast
• 8.16. ALD Applications