市场调查报告书
商品编码
1452903
日本、韩国和中国的第三代半导体(SiC)产业政策Industry Policies of Third-Generation Semiconductors - SiC - in Japan, Korea, and China |
近年来,第三代半导体,特别是碳化硅(SiC),受到市场的广泛关注。 这种兴趣的增加主要是由于 SiC 的独特特性,包括其承受更高电压和温度、提高功率转换效率以及在高频下实现卓越传输效率的能力。 这些特性使 SiC 成为各种应用的理想选择,包括电动车 (EV)、再生能源、光电子、卫星通讯、国防和军事应用。 此外,由于SiC材料的取得成为挑战,一些国家已将上游晶体生长材料视为国家半导体策略的重要战略资源。
本报告详细分析了日本、韩国、中国的SiC产业政策,并简要讨论了美国、欧盟(EU)、日本等主要国家SiC的未来趋势、韩国、中国。
In recent years, there has been a notable surge in market attention directed towards third-generation semiconductors, particularly Silicon Carbide (SiC). This heightened interest is primarily attributed to the unique characteristics of SiC, including its capability to withstand higher voltages and temperatures, provide enhanced power conversion efficiency, and achieve superior transmission efficiency at high frequencies. These attributes position SiC as an ideal choice for various applications, including electric vehicles (EV), renewable energy, optoelectronics, satellite communications, national defense, and military applications. Furthermore, the challenging acquisition of SiC materials has prompted several countries to recognize upstream crystal growth materials as crucial strategic resources within their national semiconductor strategies. This report provides an in-depth analysis and overview of SiC industry policies in Japan, Korea, and China, along with a concise examination of SiC's future development trends in major countries: the United States, the European Union (EU), Japan, Korea, and China.