市场调查报告书
商品编码
1467807
2024-2032 年动态随机存取记忆体市场(按类型、技术、最终用户和地区划分)Dynamic Random Access Memory Market by Type, Technology, End User, and Region 2024-2032 |
2023年全球动态随机存取记忆体(DRAM)IMARC Group规模达1,211亿美元。消费性电子产业的显着成长、广泛的研发 (R&D) 活动以及快速的技术进步是推动市场发展的一些关键因素。
动态随机存取记忆体(DRAM)是一种半导体记忆体,它将每一位资料储存在储存单元中。它将资料储存为积体电路内电容器中的一系列电荷。它是一种常见的随机存取记忆体 (RAM),用于个人电脑、伺服器、智慧型手机、平板电脑和工作站。 DRAM 的设计很简单,只需要一个晶体管,并且允许在程式运行时刷新和删除记忆体。与静态随机存取记忆体 (SRAM) 相比,DRAM 相对经济高效且密度高,允许在单一装置中安装大量记忆体。因此,DRAM 在 IT 和电信、国防和航空航太、媒体和娱乐、医疗和保健以及消费性电子产业中得到了广泛的应用。
全球消费性电子产业的显着成长是创造正面市场前景的关键因素之一。与此一致的是,智慧型手机、平板电脑、笔记型电脑和其他需要大量记忆体来运行高级应用程式并提供无缝用户体验的电子设备的日益普及,有利于市场成长。此外,广泛采用 DRAM资料中心来储存频繁存取的资料和指令,可以实现更快的处理速度和高资料传输率,这反过来又成为另一个成长诱导因素。除此之外,用于动态调整 DRAM 时序和电压设定以优化效能并最大限度降低功耗的人工智慧 (AI) 整合正在为市场成长提供推动力。此外,製造商正致力于引入各种先进技术来提高 DRAM 的性能和效率,例如提高时脉速度、降低电压以及实现先进的省电功能,这反过来又对市场成长产生积极影响。其他因素包括对云端运算的需求不断增长、5G、虚拟实境和扩增实境(VR/AR)等技术的快速进步需要高效能 DRAM、对高记忆体手持装置的需求不断增长、广泛的研发(研发) )活动以及计算领域新设备(例如混合设备和超薄笔记型电脑)的推出正在支持市场成长。
The global dynamic random access memory (DRAM) market size reached US$ 121.1 Billion in 2023. Looking forward, IMARC Group expects the market to reach US$ 339.8 Billion by 2032, exhibiting a growth rate (CAGR) of 11.79% during 2024-2032. The significant growth in the consumer electronics industry, extensive research and development (R&D) activities, and rapid technological advancements represent some of the key factors driving the market.
Dynamic random access memory (DRAM) is a type of semiconductor memory that stores each bit of data in a memory cell. It stores data as a series of electrical charges in capacitors within an integrated circuit. It is a common type of random access memory (RAM) that is used in personal computers, servers, smartphones, tablets, and workstations. DRAM is simply designed only requiring one transistor and allows memory to be refreshed and deleted while a program is running. As compared to static random access memory (SRAM), DRAM is relatively cost-efficient and high-density, allowing large amounts of memory to be installed in a single device. As a result, DRAM finds extensive applications across the IT and telecommunication, defense and aerospace, media, and entertainment, medical and healthcare, and consumer electronics industries.
The significant growth in the consumer electronics industry across the globe is one of the key factors creating a positive outlook for the market. In line with this, the growing popularity of smartphones, tablets, laptops, and other electronic devices that require large amounts of memory to run advanced applications and provide a seamless user experience, is favoring the market growth. Moreover, the widespread adoption of DRAM data centers to store frequently accessed data and instructions allows for faster processing speeds and a high data transfer rate, which in turn is acting as another growth-inducing factor. Apart from this, the integration of artificial intelligence (AI) that is used to dynamically adjust the DRAM's timing and voltage settings to optimize performance and minimize power consumption is providing a thrust to the market growth. Additionally, manufacturers are focusing on the introduction of various advanced techniques to improve the performance and efficiency of DRAM, such as increasing the clock speed, reducing the voltage, and implementing advanced power-saving features, which in turn is positively influencing the market growth. Other factors, including increasing demand for cloud computing, rapid technological advancements such as 5G, virtual reality, and augmented reality (VR/AR) that require high-performance DRAM, rising demand for high-memory handheld devices, extensive research and development (R&D) activities, and launch of new devices in the computing field, such as hybrid devices and ultra-thin notebooks, are supporting the market growth.
IMARC Group provides an analysis of the key trends in each segment of the global dynamic random access memory (DRAM) market, along with forecasts at the global, regional, and country levels from 2024-2032. Our report has categorized the market based on type, technology, and end user.
Synchronous DRAM
Burst Extended Data
Output Extended Data
Output Asynchronous DRAM
Fast Page Mode
The report has provided a detailed breakup and analysis of the dynamic random access memory (DRAM) market based on the type. This includes synchronous DRAM, burst extended data, output extended data, output asynchronous DRAM, and fast page mode. According to the report, synchronous DRAM represented the largest segment.
DDR4
DDR3
DDR5/GDDR5
DDR2
A detailed breakup and analysis of the dynamic random access memory (DRAM) market based on the technology has also been provided in the report. This includes DDR4, DDR3, DDR5/GDDR5 and DDR2. According to the report, DDR4 accounted for the largest market share.
IT and Telecommunication
Defense and Aerospace
Media and Entertainment
Medical and Healthcare
Consumer Electronics
The report has provided a detailed breakup and analysis of the dynamic random access memory (DRAM) market based on the end user. This includes IT and telecommunication, defense and aerospace, media and entertainment, medical and healthcare, and consumer electronics. According to the report, consumer electronics represented the largest segment.
North America
United States
Canada
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The report has also provided a comprehensive analysis of all the major regional markets, which include North America (the United States and Canada); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa. According to the report, Asia Pacific was the largest market for dynamic random access memory (DRAM). Some of the factors driving the Asia Pacific dynamic random access memory (DRAM) market included the significant growth in the consumer electronics industry, increasing adoption of smartphones and tablets, and extensive research and development (R&D) activities.
The report has also provided a comprehensive analysis of the competitive landscape in the global dynamic random access memory (DRAM) market. Detailed profiles of all major companies have also been provided. Some of the companies covered include ATP Electronics Inc. (Orient Semiconductor Electronics Ltd.), Etron Technology Inc., Integrated Silicon Solution Inc., Kingston Technology Corporation, Micron Technology Inc., Nanya Technology Corporation, Powerchip Semiconductor Manufacturing Corp., Samsung Electronics Co. Ltd, SK Hynix Inc., Transcend Information Inc., Winbond Electronics Corporation, etc. Kindly note that this only represents a partial list of companies, and the complete list has been provided in the report.
Kindly note that this only represents a partial list of companies, and the complete list has been provided in the report.