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射频功率半导体市场 - 2024 年至 2029 年预测RF Power Semiconductor Market - Forecasts from 2024 to 2029 |
射频功率半导体市场预计复合年增长率为 8.52%,从 2024 年的 239.22 亿美元增加到 2029 年的 360.02 亿美元。
RF 或射频是一种用于确定电磁无线电波振盪速率的测量技术。电磁波的频率较低,范围为300GHz至9kHz。无线电波主要用于使用天线和发送器的无线通讯。高频功率半导体是无线通讯电力电子中用作开关和整流器的装置。
此外,砷化镓材料预计将占据射频功率半导体的主导市场占有率,因为它广泛用于智慧型手机的射频组件。砷化镓由于其热稳定性、高电子迁移率和低噪音而在市场上越来越受欢迎。此外,汽车、消费性电子、航太和国防等最终用户产业将越来越多地看到射频功率半导体的广泛用途。
此外,5G 技术的日益普及和对无线网路的需求不断增长也可能有助于未来几年的市场扩张。然而,高生产成本和低利润率可能会阻碍企业探索射频功率半导体技术并抑制市场。
射频功率半导体市场驱动因素
推动全球射频功率半导体元件市场的关键因素包括运算设备中 LTE(长期演进)和 5G 等无线网路的广泛采用。
除此之外,平板电脑和智慧型手机等电子设备的使用不断增加,以及射频功率在照明应用中的广泛采用,也大大刺激了全球市场的成长。
此外,射频功率半导体广泛应用于蜂窝和行动电话应用,这些射频元件是蜂窝和行动无线基础设施中所有基地台的基本组件,从而推动未来几年的市场扩张。根据 Techjury 2023 年 IoT Insights 的资料,到 2023 年,全球物联网设备数量将达到 144 亿个,到 2025 年将达到 270 亿个,到 2025 年将进一步达到 254 亿个,预计还会成长。超过 400 个动态物联网平台正在使用,5G 创新预计到 2023 年将使物联网成员增加到 13 亿。对蜂窝和行动无线需求的快速成长可能会对市场成长产生积极影响。
亚太地区将是一个快速成长的地区,特别是随着 5G 网路在日本、印度和中国等国家的采用率不断增加。此外,该地区家电和汽车行业的快速都市化和工业化将推动对高速连接的需求,从而刺激对射频功率半导体的需求。该地区主要企业的新产品开拓也影响该地区的市场扩张。
例如,三菱电机计划于 2024 年 2 月推出用于商务用手持双向无线对讲机的原型 6.5W 硅射频高功率 MOSFET。该样品透过 3.6V 单节锂离子电池实现了业界领先的 6.5W 击穿功率,预计将扩大商务用无线硬体的覆盖范围并降低功耗。商务用无线电产业预计将利用这种电池比传统 7.2V 电池更低的成本来设计高功率的产品。
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The RF power semiconductor market is projected to grow at a CAGR of 8.52% to reach US$36.002 billion by 2029, from US$23.922 billion in 2024.
RF or Radio Frequency is a measurement technique that is used to ascertain the oscillation rate of electromagnetic radio waves. The frequency of electromagnetic radio waves ranges from 300 GHz to as low as 9 kHz. The radio waves are used mainly for wireless communication with the use of antennas and transmitters. The radio-frequency power semiconductor is a device that is used as a switch or rectifier in power electronics for wireless communication.
Additionally, the gallium arsenide material is expected to hold a dominant market share of RF power semiconductors due to its wide use in smartphone RF components. It has high thermal stability and electron mobility, with low noise which has caused to rise in its popularity in the market. Further, the end-user industries such as automotive, consumer electronics, aerospace, and defense will witness a rise in the utilization of RF power semiconductors for multiple purposes.
Further, the rising employment of 5G technology and the rising demand for wireless networks will contribute to the market expansion in the coming years. However, the high cost of production with a low profit margin could discourage companies from exploring RF power semiconductor technology which could restrain the market.
RF power semiconductor market drivers
The prime factor that drives the global market of RF power semiconductor devices includes the wide employment of wireless networks such as long-term evolution (LTE) and 5G across computing devices.
Apart from this, the increasing use of electronic devices such as tablets and smartphones and the intensive adoption of RF power in lighting applications also stimulate the global growth of the market significantly.
Moreover, RF power semiconductors are extensively utilized in cellular and mobile phone applications and these RF devices are fundamental components in all base stations for cellular and mobile wireless infrastructure, which will contribute to fuelling the market expansion in the coming years. According to Techjury data on IoT insights of 2023, IoT gadgets are anticipated to account for 14.4 billion by 2023 globally, with 27 billion associated by 2025, which will further grow the amount to 25.4 billion IoT devices by 2025. Over 400 dynamic IoT platforms are in utilization, and 5G innovation is anticipated to increment IoT with 1.3 billion memberships by 2023. The rapidly increasing requirement for cellular and mobile wireless will positively impact to the market growth.
Asia Pacific will be the fastest-growing region owing to the increasing penetration of the 5G network, especially in countries such as Japan, India, and China. Moreover, the rapid urbanization and industrialization such as the consumer electronics industry, and automotive industry in the region will promote the requirement for high-speed connectivity fuelling the demand for RF power semiconductors. The major regional players developing new products are also influencing the region's market expansion.
For instance, in February 2024, Mitsubishi Electric planned to release a prototype of its 6.5W silicon RF high-power MOSFET for commercial handheld two-way radios. This sample, which accomplishes an industry-leading 6.5W yield power from a 3.6V single-cell lithium-ion battery, is anticipated to expand the range and decrease power utilization of commercial radio hardware. The commercial radio industry is anticipated to design higher-power items utilizing these batteries, which are less costly than traditional 7.2V batteries.
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