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市场调查报告书
商品编码
1698409

全球氮化镓装置市场：2025 年至 2030 年预测

Global Gallium Nitride Device Market - Forecasts from 2025 to 2030
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 140 Pages | 商品交期: 最快1-2个工作天内

价格
简介目录

预计 2025-2030 年预测期内氮化镓装置市场复合年增长率为 4.02%。

氮化镓，俗称GaN，用于半导体元件的开发。 GaN 是一种坚韧但机械稳定的宽带宽能带隙半导体，具有高介电击穿强度和快速的开关速度。它的高热导率和低电阻率使其成为电子设备和其他应用的理想半导体。透过在硅表面形成GaN外延层，硅製造商不再需要专门化其现有的製造基础设施，从而降低了生产成本。该层还可以低成本地生产更大的硅晶片。此外，基于 GaN 技术的功率元件的性能比基于硅的功率元件高出许多。因此，GaN因其优越的性能而作为半导体越来越受欢迎。

市场趋势：

  • 由于家用电子电器需求的不断增长以及可再生能源解决方案的日益普及，预计全球氮化镓 (GaN) 产业将在预测期内显着增长。推动这一成长的主要因素是消费性电子产业的蓬勃发展和对通讯服务日益增长的需求。可支配收入的增加预计也将推动家用电器的需求。
  • 此外，技术进步大大增加了对通讯服务的需求，进一步推动了市场成长。根据思科的报告，IP 流量预计将成长四倍，从 2017 年的每年 1.5 Zetta位元组增加到 2022 年的每年 4.8 Zetta位元组。为了满足日益增长的需求，无线产业正在从 4G 迁移到 5G 网络，预计这将在预测期内推动对 GaN 的需求。
  • 亚太地区 GaN 市场可望强劲成长。可支配收入的增加和技术的广泛应用正在推动家用电器的需求，尤其是在该地区。尤其是智慧型设备用户数量正在快速成长。根据bankmycell.com预测，2021年全球智慧型手机用户将达38亿，占全球人口的48.3%，而行动电话用户将达48.8亿，占全球人口的62.07%。总合52.8亿人拥有行动装置。由于智慧型设备日益普及，预计氮化镓产业在预测期内将快速扩张。该领域的技术创新也有望为GaN市场带来新的成长机会。
  • 亚太地区的GaN市场预计将出现良好的成长。工业化加上低廉的人事费用、高生产潜力以及有利的外包政策，推动了该地区家电製造公司的快速成长。此外，可支配收入的增加刺激了对智慧型设备和其他家用电器的需求，进一步推动了市场成长。

报告中介绍的主要企业包括英飞凌科技股份公司、博通公司、安森美半导体公司、戴乐格半导体公司（瑞萨电子）、Wolfspeed 公司、Qorvo 公司、诺斯罗普·格鲁曼公司和德州仪器。

本报告的主要优点

  • 深刻分析：获得涵盖主要地区和新兴地区的深入市场洞察，重点关注客户群、政府政策和社会经济因素、消费者偏好、垂直行业和其他子区隔。
  • 竞争格局：了解全球主要企业所采用的策略策略，并了解正确策略带来的潜在市场渗透。
  • 市场趋势和驱动因素：探索动态因素和关键市场趋势以及它们将如何影响市场的未来发展。
  • 可行的建议：利用洞察力进行策略决策，在动态环境中开闢新的业务流和收益。
  • 受众范围广泛：Start-Ups、研究机构、顾问公司、中小企业和大型企业都认为它有用且具有成本效益。

它有什么用途？

产业和市场考量、商业机会评估、产品需求预测、打入市场策略、地理扩张、资本支出决策、法律规范与影响、新产品开发、竞争影响

研究范围

  • 2022 年至 2024 年的历史资料和 2025 年至 2030 年的预测资料
  • 成长机会、挑战、供应链前景、法律规范与趋势分析
  • 竞争定位、策略和市场占有率分析
  • 收益成长和预测分析（包括国家在内的细分市场和地区）
  • 公司概况（策略、产品、财务资讯、主要趋势等）

目录

第一章 引言

  • 市场概览
  • 市场定义
  • 研究范围
  • 市场区隔
  • 货币
  • 先决条件
  • 基准年和预测年时间表
  • 相关人员的主要利益

第二章调查方法

  • 研究设计
  • 研究过程

第三章执行摘要

  • 主要发现

第四章 市场动态

  • 市场驱动因素
  • 市场限制
  • 波特五力分析
  • 产业价值链分析
  • 分析师观点

5. 全球氮化镓装置市场（依晶圆尺寸）

  • 介绍
  • 2英吋
  • 4吋
  • 6吋
  • 超过 6 英寸

第六章 全球氮化镓装置市场（依元件类型）

  • 介绍
  • 功率半导体装置
  • 射频半导体装置
  • 光半导体装置

7. 全球氮化镓装置市场（按应用）

  • 介绍
  • 射频
  • 电力电子
  • 光电子
  • 家电
  • 通讯
  • 其他的

第八章全球氮化镓装置市场（依产业垂直划分）

  • 介绍
  • 家电
  • 通讯
  • 车
  • 航太和国防
  • 其他的

9. 全球氮化镓装置市场（按地区）

  • 介绍
  • 美洲
    • 按晶圆尺寸
    • 依设备类型
    • 按应用
    • 按行业
    • 按国家
  • 欧洲、中东和非洲
    • 按晶圆尺寸
    • 依设备类型
    • 按应用
    • 按行业
    • 按国家
  • 亚太地区
    • 按晶圆尺寸
    • 依设备类型
    • 按应用
    • 按行业
    • 按国家

第十章竞争格局及分析

  • 主要企业和策略分析
  • 市场占有率分析
  • 合併、收购、协议和合作
  • 竞争仪錶板

第十一章 公司简介

  • Infineon Technologies AG
  • Broadcom Inc.
  • ON Semiconductor Corporation
  • Dialog Semiconductor（Renesas Electronics）
  • Wolfspeed, Inc.
  • Qorvo, Inc.
  • Northrop Grumman
  • Texas Instruments
  • Sumitomo Electric Industries Ltd.
  • GaN Systems Inc.
  • MACOM
  • Mitsubishi Electric Corporation
  • Epistar

第十二章 附录

  • 货币
  • 先决条件
  • 基准年和预测年时间表
  • 相关人员的主要利益
  • 调查方法
  • 简称
简介目录
Product Code: KSI061612651

The global Gallium Nitride Device market is expected to grow at a compound annual growth rate of 4.02% over the forecast period of 2025-2030.

Gallium Nitride, commonly known as GaN, is used in developing semiconductor devices. GaN is a rigorous yet mechanically stable wide bandgap semiconductor with higher breakdown strength and faster switching speed. Its higher thermal conductivity and low resistance make it an ideal semiconductor for electronics and other devices. By creating a GaN epilayer on a silicon surface, silicon manufacturer can reduce their manufacturing cost by removing the need for specialization with the existing manufacturing infrastructure. This layer also enables the production of larger silicon wafers at a lower cost. Furthermore, it has been observed that the power devices based on GaN technology outperform those based on silicon at a noteworthy rate. Hence, GaN is gaining more popularity as a semiconductor due to its better performance.

Market Trends:

  • The global gallium nitride (GaN) industry is expected to experience significant growth during the forecast period, driven by the rising demand for consumer electronics and the increasing adoption of renewable energy solutions. The primary factor fueling this growth is the booming consumer electronics sector and the expanding need for telecommunication services. Higher disposable incomes are also expected to boost the demand for consumer electronics.
  • Additionally, technological advancements have significantly increased the demand for telecommunication services, further propelling market growth. According to a report by Cisco, IP traffic is projected to quadruple, reaching 4.8 Zettabytes per year in 2022, up from 1.5 Zettabytes per year in 2017. To meet this growing demand, the wireless industry is transitioning from 4G to 5G networks, which is expected to drive the demand for GaN during the forecast period.
  • Asia-Pacific is poised for strong growth in the GaN market. Rising disposable incomes and increased technology penetration have boosted the demand for consumer electronics, particularly in this region. Smart devices, in particular, have seen a surge in users. According to bankmycell.com, there were 3.8 billion smartphone users in 2021, representing 48.3% of the global population, while mobile phone users totaled 4.88 billion, or 62.07% of the global population. In total, 5.28 billion people owned mobile devices. The growing adoption of smart devices is expected to drive the gallium nitride industry's expansion at a rapid pace during the forecast period. Technological innovations in the sector are also expected to create new growth opportunities for the GaN market.
  • The Asia-Pacific GaN market is projected to experience lucrative growth. Industrialization, coupled with low labor costs, high production potential, and favorable outsourcing policies, has led to the proliferation of consumer electronics manufacturing companies in the region. Additionally, rising disposable incomes have increased the demand for smart devices and other consumer electronics, further supporting market growth.

Some of the major players covered in this report include Infineon Technologies AG, Broadcom Inc., ON Semiconductor Corporation, Dialog Semiconductor (Renesas Electronics), Wolfspeed, Inc., Qorvo, Inc., Northrop Grumman, Texas Instruments, among others.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

Global Gallium Nitride Device Market is analyzed into the following segments:

By Wafer Size

  • 2 inch
  • 4 inch
  • 6 inch
  • More than 6 inch

By Type of Device

  • Power Semiconductor Device
  • RF Semiconductor Device
  • Opto-Semiconductor Device

By Application

  • Radio Frequency
  • Power Electronics
  • Optoelectronics
  • Consumer electronics
  • Telecommunications
  • Others

By Industry

  • Consumer Electronics
  • Telecommunication
  • Automotive
  • Aerospace and Defense
  • Others

By Region

  • Americas
  • US
  • Europe, Middle East, and Africa
  • Germany
  • Netherlands
  • Others
  • Asia Pacific
  • China
  • Japan
  • Taiwan
  • South Korea
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base and Forecast Years Timeline
  • 1.8. Key benefits for the stakeholders

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Process

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY WAFER SIZE

  • 5.1. Introduction
  • 5.2. 2 inch
  • 5.3. 4 inch
  • 5.4. 6 inch
  • 5.5. More than 6 inch

6. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY TYPE OF DEVICE

  • 6.1. Introduction
  • 6.2. Power Semiconductor Device
  • 6.3. RF Semiconductor Device
  • 6.4. Opto-Semiconductor Device

7. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY APPLICATION

  • 7.1. Introduction
  • 7.2. Radio Frequency
  • 7.3. Power Electronics
  • 7.4. Optoelectronics
  • 7.5. Consumer electronics
  • 7.6. Telecommunications
  • 7.7. Others

8. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY INDUSTRY

  • 8.1. Introduction
  • 8.2. Consumer Electronics
  • 8.3. Telecommunication
  • 8.4. Automotive
  • 8.5. Aerospace and Defense
  • 8.6. Others

9. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY GEOGRAPHY

  • 9.1. Introduction
  • 9.2. Americas
    • 9.2.1. By Wafer Size
    • 9.2.2. By Type of Device
    • 9.2.3. By Appliccation
    • 9.2.4. By Industry
    • 9.2.5. By Country
      • 9.2.5.1. US
  • 9.3. Europe, Middle East & Africa
    • 9.3.1. By Wafer Size
    • 9.3.2. By Type of Device
    • 9.3.3. By Appliccation
    • 9.3.4. By Industry
    • 9.3.5. By Country
      • 9.3.5.1. Germany
      • 9.3.5.2. Netherlands
      • 9.3.5.3. Others
  • 9.4. Asia Pacific
    • 9.4.1. By Wafer Size
    • 9.4.2. By Type of Device
    • 9.4.3. By Appliccation
    • 9.4.4. By Industry
    • 9.4.5. By Country
      • 9.4.5.1. China
      • 9.4.5.2. Japan
      • 9.4.5.3. Taiwan
      • 9.4.5.4. South Korea
      • 9.4.5.5. Others

10. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 10.1. Major Players and Strategy Analysis
  • 10.2. Market Share Analysis
  • 10.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 10.4. Competitive Dashboard

11. COMPANY PROFILES

  • 11.1. Infineon Technologies AG
  • 11.2. Broadcom Inc.
  • 11.3. ON Semiconductor Corporation
  • 11.4. Dialog Semiconductor (Renesas Electronics)
  • 11.5. Wolfspeed, Inc.
  • 11.6. Qorvo, Inc.
  • 11.7. Northrop Grumman
  • 11.8. Texas Instruments
  • 11.9. Sumitomo Electric Industries Ltd.
  • 11.10. GaN Systems Inc.
  • 11.11. MACOM
  • 11.12. Mitsubishi Electric Corporation
  • 11.13. Epistar

12. APPENDIX

  • 12.1. Currency
  • 12.2. Assumptions
  • 12.3. Base and Forecast Years Timeline
  • 12.4. Key benefits for the stakeholders
  • 12.5. Research Methodology
  • 12.6. Abbreviations