氮化镓装置市场－2025-2030年预测

全球氮化镓装置市场预计将从 2025 年的 248.05 亿美元成长到 2030 年的 323.42 亿美元，复合年增长率为 5.45%。

宽能带隙，具有优异的介电击穿强度、快速开关特性、高导热性和低电阻率，正在革新电力电子领域。透过在硅基基板外延生长 GaN 层，製造商可以利用现有基础设施降低成本，并实现无需专用设施的大尺寸晶圆生产。 GaN 的功率效率优于硅，使其在高频、高压应用中广泛应用。受 5G 扩展、家用电子电器需求、可再生能源併网、汽车电气化以及高效能运算技术进步的推动，全球 GaN 装置市场预计将保持强劲成长。亚太地区的製造优势以及硅基 GaN 成本的下降进一步推动了市场发展。

市场趋势

氮化镓（GaN）的多功能性使其能够支援紧凑高效的设计，应用范围涵盖从增强通讯网路到为智慧型设备供电等各个领域。在可再生能源领域，它有助于优化太阳能和风能逆变器；在汽车领域，它能够提升电动车的电源管理和效率。高效能运算受益于氮化镓更快的处理器，而亚太地区的在地化生产正在推动市场需求。基于硅的氮化镓创新简化了生产流程，降低了进入门槛，扩大了应用范围。

成长驱动力

家用电子电器和通讯的快速成长

家用电子电器市场在可支配收入成长的推动下快速发展，促使高效充电器和小型设备中广泛采用氮化镓（GaN）技术。随着5G的推出，通讯产业预计将迎来指数级成长，对高速、高功率密度的组件提出了更高的要求。 GaN在射频放大器和基地台的卓越性能，能够满足激增的数据流量和网路需求，从而帮助这项转型。

可再生能源和汽车应用

氮化镓（GaN）可优化太阳能和风能係统的功率转换，提高效率并降低损耗。在汽车领域，它能为电动车实现先进的电源管理，从而提升续航里程和充电速度。这些领域的拓展，以及全球永续性目标的推进，正进一步扩大氮化镓在节能解决方案中的作用。

市场限制

GaN 特定製程的高昂初始开发成本以及供应链对稀有材料的依赖性会阻碍因素可扩展性，与传统硅系统的整合挑战也会限制其可扩展性，尤其是在成本敏感型应用中。

市场区隔分析

按终端用户划分，家用电子电器和通讯占据主导地位，这主要得益于对高效能射频和功率装置的需求。可再生能源和汽车产业正在快速成长，它们利用氮化镓技术製造逆变器和车载充电器。其他行业，包括国防和计算，也在稳步贡献力量。依技术划分，硅基氮化镓（GaN-on-Si）凭藉其成本优势占据主导，而碳化硅基氮化镓（GaN-on-SiC）则瞄准高功率需求。按地区划分，亚太地区占最大份额，这主要得益于中国和日本的製造地、智慧型设备的蓬勃发展以及可再生能源计划的推进。

竞争格局

英飞凌、罗姆和Guerrilla RF等主要企业正致力于建立伙伴关係、晶圆创新和高功率解决方案，以获得市场份额。他们的策略重点在于降低成本、提升效能，并提供产业专用的解决方案，以满足通讯、汽车和可再生能源等产业不断变化的需求。

区域分析

亚太地区凭藉工业化、低成本製造以及不断增长的家用电子电器需求，正引领经济成长，全球智慧型手机普及率已超过60%。大型太阳能发电工程等可再生能源措施也进一步推动了该地区的成长。北美和欧洲紧随其后，电动车和5G领域的研发投入为其发展注入了强劲动力。同时，新兴市场也蕴藏着巨大的扩张机会。

受5G、电动车和可再生能源的推动，主导是亚太地区的成长，氮化镓（GaN）装置市场预计将迎来快速成长。硅基技术的创新正在降低成本，使其更具竞争力。晶圆技术的最新进展和伙伴关係表明，氮化镓的应用正在加速，使其成为高效能、高性能电子设备的关键材料。

本报告的主要优势：

• 深入分析：取得以客户群、政府政策和社会经济因素、消费者偏好、垂直产业和其他细分市场为重点的深入市场洞察，涵盖主要地区和新兴地区。
• 竞争格局：了解主要企业采取的策略倡议，并了解透过正确的策略实现市场渗透的潜力。
• 市场驱动因素与未来趋势：探索动态因素和关键市场趋势，以及它们将如何塑造未来的市场发展。
• 可执行的建议：利用洞察力为策略决策提供讯息，从而在动态环境中开拓新的业务管道和收入来源。
• 受众范围广：对新兴企业、研究机构、顾问公司、中小企业和大型企业都有益处且经济高效。

它是用来做什么的？

产业与市场洞察、商业机会评估、产品需求预测、打入市场策略、地理扩张、资本投资决策、法律规范及其影响、新产品开发、竞争影响

分析范围

• 历史资料（2022-2024 年）和预测资料（2025-2030 年）
• 成长机会、挑战、供应链前景、法规结构、客户行为和趋势分析
• 竞争对手定位、策略和市场占有率分析
• 按业务板块和地区（国家）分類的收入成长和预测分析
• 公司概况（策略、产品、财务资讯、关键趋势等）

目录

第一章执行摘要

第二章市场概述

• 市场概览
• 市场定义
• 分析范围
• 市场区隔

第三章 商业情境

• 市场驱动因素
• 市场限制
• 市场机会
• 波特五力分析
• 产业价值链分析
• 政策和法规
• 策略建议

第四章 技术展望

5. 全球氮化镓装置市场（依晶圆尺寸划分）

• 介绍
• 2英吋
• 4吋
• 6吋

6. 全球氮化镓装置市场（依电压划分）

• 介绍
• 40伏特或以下
• 40至100伏
• 100伏特或以上

7. 全球氮化镓装置市场（依最终用户划分）

• 介绍
• 家用电子电器
• 资讯科技/通讯
• 车
• 航太/国防
• 医疗保健
• 其他的

8. 全球氮化镓装置市场（按地区划分）

• 介绍
• 美洲
  • 按晶圆尺寸
  • 透过电压
  • 最终用户
  • 按国家/地区
  • 美国
• 欧洲、中东和非洲
  • 按晶圆尺寸
  • 透过电压
  • 最终用户
  • 按国家/地区
    • 德国
    • 法国
    • 荷兰
    • 其他的
• 亚太地区
  • 按晶圆尺寸
  • 透过电压
  • 最终用户
  • 按国家/地区
    • 中国
    • 日本
    • 韩国
    • 台湾
    • 其他的

第九章 竞争格局与分析

• 主要企业和策略分析
• 市占率分析
• 企业合併、协议、商业合作
• 竞争对手仪錶板

第十章：公司简介

• Infineon Technologies AG
• ROHM Semiconductor
• Broadcom Inc.
• Renesas Electronics Corporation
• Qorvo, Inc.
• Northrop Grumman
• Texas Instruments Inc.
• Sumitomo Electric Industries Ltd.
• MACOM
• Mitsubishi Electric Corporation

第十一章附录

• 货币
• 先决条件
• 基准年和预测年时间表
• 相关人员的主要收益
• 分析方法
• 简称

The Global Gallium Nitride Device Market will climb from USD 24.805 billion in 2025 to USD 32.342 billion in 2030, registering a 5.45% compound annual growth rate (CAGR).

Gallium Nitride (GaN) devices, leveraging a wide bandgap semiconductor with superior breakdown strength, faster switching speeds, higher thermal conductivity, and low resistance, are revolutionizing power electronics. By epitaxially growing GaN layers on silicon substrates, manufacturers reduce costs through existing infrastructure, enabling larger wafer production without specialized facilities. GaN outperforms silicon in power efficiency, driving adoption in high-frequency, high-voltage applications. The global GaN device market is poised for robust growth, fueled by 5G expansion, consumer electronics demand, renewable energy integration, automotive electrification, and high-performance computing advancements. Asia-Pacific's manufacturing dominance and cost reductions in silicon-based GaN further accelerate market momentum.

Market Trends

GaN's versatility supports compact, efficient designs across sectors, from enhancing telecommunication networks to powering smart devices. Its role in renewable energy optimizes solar and wind inverters, while in automotive, it improves EV power management and efficiency. High-performance computing benefits from GaN's faster processors, and regional manufacturing in Asia-Pacific boosts demand. Innovations in silicon-based GaN streamline production, lowering barriers to entry and expanding accessibility.

Growth Drivers

Surge in Consumer Electronics and Telecommunications

The booming consumer electronics market, driven by rising disposable incomes, propels GaN adoption for efficient chargers and compact devices. Telecommunications sees exponential growth from 5G rollout, requiring high-speed, power-dense components. GaN's superior performance in RF amplifiers and base stations supports this transition, addressing surging data traffic and network demands.

Renewable Energy and Automotive Adoption

GaN optimizes power conversion in solar and wind systems, enhancing efficiency and reducing losses. In automotive, it enables advanced power management for EVs, improving range and charging speeds. These sectors' expansion, coupled with global sustainability goals, amplifies GaN's role in energy-efficient solutions.

Market Restraints

High initial development costs for GaN-specific processes and supply chain dependencies on rare materials may constrain scalability. Integration challenges with legacy silicon systems also pose hurdles, particularly in cost-sensitive applications.

Market Segment Analysis

By end-user, consumer electronics and telecommunications dominate, driven by demand for high-efficiency RF and power devices. Renewable energy and automotive segments grow rapidly, leveraging GaN for inverters and onboard chargers. Defense and others, including computing, contribute steadily. By technology, GaN-on-Si leads for cost advantages, while GaN-on-SiC targets high-power needs. Geographically, Asia-Pacific holds the largest share, propelled by manufacturing hubs in China and Japan, with surging smart device penetration and renewable projects.

Key Developments

In January 2025, Guerrilla RF Inc. launched GRF0020D and GRF0030D, GaN-on-SiC HEMT power amplifiers delivering up to 50W saturated power for wireless infrastructure, military, aerospace, and industrial heating markets. In December 2024, ROHM Semiconductor partnered with TSMC for GaN power device development and volume production targeting EV applications. In September 2024, Infineon Technologies developed 300 mm power GaN wafer technology, pioneering larger-scale production to substantially advance GaN-based power semiconductors.

Competitive Landscape

Leading players like Infineon, ROHM, and Guerrilla RF focus on partnerships, wafer innovations, and high-power solutions to capture market share. Strategies emphasize cost reduction, performance enhancement, and sector-specific tailoring to meet evolving demands in telecom, automotive, and renewables.

Regional Analysis

Asia-Pacific drives growth through industrialization, low-cost manufacturing, and rising consumer electronics demand, with smartphone penetration exceeding 60% globally. Renewable initiatives, like large-scale solar projects, further bolster the region. North America and Europe follow, supported by R&D in EVs and 5G, while emerging markets offer expansion opportunities.

The GaN device market is set for exponential growth, propelled by 5G, EVs, and renewables, with Asia-Pacific leading. Silicon-based innovations reduce costs, enhancing competitiveness against silicon alternatives. Recent advancements in wafer tech and partnerships signal accelerated adoption, positioning GaN as pivotal for efficient, high-performance electronics.

Key Benefits of this Report:

• Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
• Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
• Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
• Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
• Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

• Historical data from 2022 to 2024 & forecast data from 2025 to 2030
• Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
• Competitive Positioning, Strategies, and Market Share Analysis
• Revenue Growth and Forecast Assessment of segments and regions including countries
• Company Profiling (Strategies, Products, Financial Information, and Key Developments among others.

The Gallium Nitride Device Market is analyzed into the following segments:

By Wafer Size

• 2 inch
• 4 inch
• 6 inch

By Voltage

• Up to 40 Volts
• 40 to 100 Volts
• Greater than 100 Volts

By End-User

• Consumer Electronics
• IT & Telecommunication
• Automotive
• Aerospace & Defense
• Healthcare
• Others

By Geography

• Americas
• USA
• Europe Middle East and Africa
• Germany
• France
• Netherlands
• Others
• Asia Pacific
• China
• Japan
• South Korea
• Taiwan
• Others

TABLE OF CONTENTS

1. EXECUTIVE SUMMARY

2. MARKET SNAPSHOT

• 2.1. Market Overview
• 2.2. Market Definition
• 2.3. Scope of the Study
• 2.4. Market Segmentation

3. BUSINESS LANDSCAPE

• 3.1. Market Drivers
• 3.2. Market Restraints
• 3.3. Market Opportunities
• 3.4. Porter's Five Forces Analysis
• 3.5. Industry Value Chain Analysis
• 3.6. Policies and Regulations
• 3.7. Strategic Recommendations

4. TECHNOLOGICAL OUTLOOK

5. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY WAFER SIZE

• 5.1. Introduction
• 5.2. 2 inch
• 5.3. 4 inch
• 5.4. 6 inch

6. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY VOLTAGE

• 6.1. Introduction
• 6.2. Up to 40 Volts
• 6.3. 40 to 100 Volts
• 6.4. Greater than 100 Volts

7. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY END-USER

• 7.1. Introduction
• 7.2. Consumer Electronics
• 7.3. IT & Telecommunication
• 7.4. Automotive
• 7.5. Aerosapce & Defense
• 7.6. Healthcare
• 7.7. Others

8. GLOBAL GALLIUM NITRIDE DEVICE MARKET BY GEOGRAPHY

• 8.1. Introduction
• 8.2. Americas
  • 8.2.1. By Wafer Size
  • 8.2.2. By Voltage
  • 8.2.3. By End-User
  • 8.2.4. By Country
  • 8.2.5. USA
• 8.3. Europe Middle East and Africa
  • 8.3.1. By Wafer Size
  • 8.3.2. By Voltage
  • 8.3.3. By End-User
  • 8.3.4. By Country
    • 8.3.4.1. Germany
    • 8.3.4.2. France
    • 8.3.4.3. Netherlands
    • 8.3.4.4. Others
• 8.4. Asia Pacific
  • 8.4.1. By Wafer Size
  • 8.4.2. By Voltage
  • 8.4.3. By End-User
  • 8.4.4. By Country
    • 8.4.4.1. China
    • 8.4.4.2. Japan
    • 8.4.4.3. South Korea
    • 8.4.4.4. Taiwan
    • 8.4.4.5. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 9.1. Major Players and Strategy Analysis
• 9.2. Market Share Analysis
• 9.3. Mergers, Acquisitions, Agreements, and Collaborations
• 9.4. Competitive Dashboard

10. COMPANY PROFILES

• 10.1. Infineon Technologies AG
• 10.2. ROHM Semiconductor
• 10.3. Broadcom Inc.
• 10.4. Renesas Electronics Corporation
• 10.5. Qorvo, Inc.
• 10.6. Northrop Grumman
• 10.7. Texas Instruments Inc.
• 10.8. Sumitomo Electric Industries Ltd.
• 10.9. MACOM
• 10.10. Mitsubishi Electric Corporation

11. APPENDIX

• 11.1. Currency
• 11.2. Assumptions
• 11.3. Base and Forecast Years Timeline
• 11.4. Key benefits for the stakeholders
• 11.5. Research Methodology
• 11.6. Abbreviations