查看购物车
  • Traditional Chinese
  • English
  • Japanese
  • Korean
封面
市场调查报告书
商品编码
1911493

射频和微波二极体：市场份额分析、行业趋势和统计数据、成长预测（2026-2031 年）

RF And Microwave Diodes - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2026 - 2031)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3个工作天内

价格

※ 本网页内容可能与最新版本有所差异。详细情况请与我们联繫。

简介目录

预计射频和微波二极体市场将从 2025 年的 20.3 亿美元成长到 2026 年的 21 亿美元，到 2031 年将达到 24.8 亿美元，2026 年至 2031 年的复合年增长率为 3.39%。

射频和微波二极体市场-IMG1

这一市场成长反映了由5G基地台部署、汽车雷达专案扩展以及低地球轨道卫星星系对航太组件日益增长的需求所推动的稳定势头。电信基础设施升级持续推动大规模采购，而汽车产业正在加速二极体的消耗，以满足关键的高阶驾驶辅助系统（ADAS）的需求。氮化镓材料的替代、日益严格的出口管制法规以及主要供应商积极的产能扩张正在塑造当前的竞争格局。

全球射频及微波二极体市场趋势及洞察

5G基础设施的全球普及

大规模MIMO基地台、去程传输链路和行动电话射频前端的整合正在推动二极体的需求成长。微波回程传输已经支援全球超过一半的行动通信基地台连接，而5G流量的扩展将需要超过10 Gbps的吞吐量。基于GaN的二极体在N78和N77频段可实现34%的功率附加效率，但其3.4 V的低供电电压带来了显着的散热限制。元件製造商正在透过低寄生封装来应对这项挑战，以在宽频宽范围内保持线性度。频率调整至26-28 GHz将进一步增加对相位阵列模组所需的毫米波级二极体的需求。

对物联网和智慧家居设备的需求不断增长

预计到2025年，全球连网装置数量将超过250亿台，这将持续推动电池供电的穿戴式装置、智慧电錶和边缘感测器等应用对小讯号二极体的需求。设计人员需要超低漏电开关和封包追踪电路来满足严格的功耗预算目标。整合5G、LTE、Wi-Fi 7和低功耗蓝牙多重通讯协定的设备正在推动整合二极体阵列的应用，以减少元件数量并缩小装置尺寸。汽车无线电池管理系统是一个重要的应用案例，它可以透过低功耗蓝牙链路和低损耗射频路径实现即时电压监测。

原物料价格波动

北京当局对镓和锗的许可要求推高了现货价格，导致氮化镓外延片的成本上涨了三位数。美国95%的镓都来自中国，这给高电子移动性电晶体（HEMT）片（许多微波二极体的基础材料）的供应带来了风险。製造商已采取措施应对，例如增加双重采购、废料回收和签订长期合同，但短期价格波动仍对毛利率构成压力。

细分市场分析

到2025年，PIN二极体将占据射频和微波二极体市场28.75%的份额，这主要得益于其在射频开关矩阵和可变衰减器中的应用。通讯设备製造商看重其强大的功率处理能力和宽动态范围线性度，这对于基地台升级至关重要。国防雷达维修和卫星转发器等长生命週期设计方案的成功应用也稳定了其量产需求。萧特基二极体的射频和微波二极体市场规模预计将以5.12%的复合年增长率成长，这反映了毫米波电路的发展趋势，毫米波电路需要低正向电压和快速恢復特性。新兴的60-90 GHz汽车成像雷达和77 GHz短程模组不断取代检测器链中的PIN解决方案，进一步增强了萧特基二极体的发展动能。

由于其超陡峭的结区轮廓能够实现超过 8:1 的调谐比，设计人员仍然在 VCO 的频率合成中使用变容二极体。耿氏二极体和隧道二极体虽然应用领域有限，但专用的高功率测量设备和超低相位杂讯振盪器支撑着其稳定的市场需求。齐纳稳压二极体在高功率 GaN MMIC 的偏压网络中正逐渐占据越来越重要的地位，尤其是在需要精确过压保护的场合。

2025年，3-8 GHz频段的营收将维持31.85%的成长，主要得益于雷达高度计、卫星下行链路和5 GHz Wi-Fi网路基地台。民用航空和海事雷达的庞大安装基础延长了产品寿命，并支撑了售后市场二极体的销售。然而，随着通讯业者将固定无线接入商业化，以及汽车製造商从传统的24 GHz雷达向77 GHz雷达平台迁移，40 GHz以上的毫米波需求预计将以5.42%的复合年增长率增长。由于低地球轨道（LEO）馈线链路和机载卫星通讯系统的引入（这些系统需要窄波束天线），Ka/V频段（20-40 GHz）对射频和微波二极体市场规模的贡献正在增加。 3 GHz以下的设备将继续为物联网模组提供大量产品，在这些应用中，成本比效能更为重要。 12-18 GHz Ku/K 波段二极体的需求将保持稳定，这得益于国防探求者的升级以及广播卫星通讯地面终端的适度增长。

本《射频与微波二极体市场报告》依产品类型（例如，PIN二极体、萧特基二极体）、频宽（例如，3 GHz以下、3-8 GHz C/ X波段）、材料技术（例如，硅、砷化镓）、南美洲用户产业（例如，汽车、家用电子电器）和地区（例如，北美地区、欧洲终端、亚太地区）和地区（例如，北美地区）、欧洲终端产业（例如，汽车、消费）和地区（例如，北美地区）、欧洲终端产业。市场预测以美元计价。

区域分析

预计到2025年，亚太地区将占全球营收的44.25%，并在2031年之前维持4.51%的复合年增长率。这主要得益于中国2,950亿美元的国内半导体产业振兴倡议和日本3.9兆日圆（约260亿美元）的重建计划，后者正为下一代晶圆产能奠定基础。政府激励措施正在加速外延生长、晶圆层次电子构装和射频前端模组组装等领域的产能扩张。台湾和韩国蓬勃发展的契约製造基地进一步巩固了其规模优势，使其在该地区的主导地位得以维持。

北美将受惠于总额达390亿美元的《晶片技术创新法案》（CHIPS Act），该法案为新建专用于射频功率装置和类比装置的200毫米/300毫米晶圆厂提供补贴。 MACOM在麻萨诸塞州和北卡​​罗来纳州的无尘室扩建将增强美国国内氮化镓（GaN-on-SiC）的供应基础，并降低地缘政治带来的供应风险。由于更严格的出口管制限制了高频元件的转让，预计政府和国防需求将集中在美国供应商。加拿大和墨西哥拥有独特的组装和测试能力，并利用美墨加协定（USMCA）的原产地规则为汽车客户提供服务。

由于汽车雷达强制要求和工业4.0工厂升级，欧洲的二极体消费量趋于稳定。德国一级汽车製造商正在高阶和量产车型中采用77GHz雷达，推动了欧洲的需求。法国和英国正在支援航太和卫星项目，这些项目需要使用抗辐射二极体。同时，中东和非洲的业者正在服务不足的农村地区部署5G固定无线接入，但宏观经济逆风导致近期销售成长有限。

其他福利：

  • Excel格式的市场预测（ME）表
  • 分析师支持（3个月）

目录

第一章 引言

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章 市场情势

  • 市场概览
  • 市场驱动因素
    • 5G基础设施在全球的普及
    • 对物联网和智慧家居设备的需求不断增长
    • 汽车雷达和ADAS技术的日益普及
    • 低地球轨道卫星星系的成长
    • 毫米波雷达在工业无人机和机器人的应用
    • 向宽能带隙（GaN/SiC）二极体技术过渡
  • 市场限制
    • 原料价格波动（镓、硅、碳化硅、磷化铟）
    • 半导体产能限制与供应链风险
    • 40 GHz 以上的温度控管挑战
    • 高频装置出口管制条例
  • 价值链分析
  • 技术展望
  • 监管环境
  • 投资分析
  • 波特五力分析
    • 供应商的议价能力
    • 买方的议价能力
    • 新进入者的威胁
    • 替代品的威胁
    • 竞争对手之间的竞争
  • 宏观经济因素如何影响市场

第五章 市场规模与成长预测

  • 按类型
    • PIN二极体
    • 肖特基二极体
    • 势垒（调谐）二极体
    • 耿氏二极体
    • 隧道二极体
    • 齐纳二极体
    • 其他二极体
  • 按频段
    • 低于 3GHz
    • 3-8 GHz（C/X波段）
    • 8-20 GHz（Ku-/K-Band）
    • 20-40 GHz（Ka-/V-Band）
    • 40 GHz 以上（毫米波）
  • 透过材料技术
    • 硅（Si）
    • 砷化镓（GaAs）
    • 氮化镓（GaN）
    • 碳化硅（SiC）
    • 其他成分
  • 按最终用户行业划分
    • 车
    • 家用电子电器
    • 电讯和网路
    • 工业製造与自动化
    • 医疗保健
    • 航太/国防
    • 能源与公共产业
    • 其他行业
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
      • 墨西哥
    • 南美洲
      • 巴西
      • 阿根廷
      • 南美洲其他地区
    • 欧洲
      • 德国
      • 英国
      • 法国
      • 义大利
      • 其他欧洲地区
    • 亚太地区
      • 中国
      • 日本
      • 韩国
      • 印度
      • 亚太其他地区
    • 中东
      • 沙乌地阿拉伯
      • 阿拉伯聯合大公国
      • 其他中东地区
    • 非洲
      • 南非
      • 其他非洲地区

第六章 竞争情势

  • 市场集中度
  • 策略趋势
  • 市占率分析
  • 公司简介
    • Microchip Technology Inc.
    • Infineon Technologies AG
    • Diodes Incorporated
    • MACOM Technology Solutions Holdings, Inc.
    • Nexperia BV（Wingtech Technology Co., Ltd.）
    • onsemi（Semiconductor Components Industries, LLC）
    • ROHM Co., Ltd.
    • Vishay Intertechnology, Inc.
    • Toshiba Electronic Devices & Storage Corporation
    • Renesas Electronics Corporation
    • STMicroelectronics NV
    • PANJIT International Inc.
    • Suzhou Good-Ark Electronics Co., Ltd.
    • Skyworks Solutions, Inc.
    • Qorvo, Inc.
    • Broadcom Inc.（Avago Technologies）
    • Excelitas Technologies Corp.
    • SemiGen, Inc.
    • Richardson Electronics, Ltd.
    • Central Semiconductor Corp.

第七章 市场机会与未来展望

简介目录
Product Code: 92152

The RF and microwave diodes market is expected to grow from USD 2.03 billion in 2025 to USD 2.1 billion in 2026 and is forecast to reach USD 2.48 billion by 2031 at 3.39% CAGR over 2026-2031.

RF And Microwave Diodes - Market - IMG1

This market size growth reflects steady momentum from 5G base-station roll-outs, expanding automotive radar programs, and heightened demand for space-qualified components in LEO satellite constellations. Telecommunications infrastructure upgrades continue to drive bulk procurement, while the automotive sector accelerates diode consumption for mandatory advanced driver-assistance systems. Material substitution toward gallium nitride, tighter export-control enforcement, and proactive capacity additions by leading suppliers shape competitive positioning in the current period.

Global RF And Microwave Diodes Market Trends and Insights

Proliferation of Global 5G Infrastructure

Massive MIMO base-stations, fronthaul links, and handset RF front-ends collectively lift diode demand. Microwave backhaul already supports more than half of worldwide cell-site connections and requires throughput upgrades above 10 Gbps as 5G traffic scales. GaN-based diodes deliver 34% power-added efficiency in N78 and N77 bands, yet thermal constraints intensify at reduced 3.4 V supply rails. Component makers are responding with low-parasitic packaging that maintains linearity across wide bandwidths. Spectrum re-farming toward 26-28 GHz further increases the volume of mmWave-class diodes needed in phased-array modules.

Rising IoT and Smart-Consumer Electronics Demand

Global connected-device counts are set to exceed 25 billion by 2025, feeding sustained orders for small-signal diodes in battery-powered wearables, smart meters, and edge sensors. Designers require ultra-low-leakage switches and envelope-tracking circuits to meet stringent power-budget targets. Multi-protocol devices combining 5G, LTE, Wi-Fi 7, and Bluetooth Low Energy have spurred the adoption of integrated diode arrays that consolidate bill-of-materials while shrinking form factors. Automotive wireless battery-management systems provide a visible use case where low-loss RF paths enable real-time voltage monitoring over BLE links.

Volatile Raw-Material Prices

Beijing's export-licensing requirements on gallium and germanium lifted spot prices, pushing GaN epi-wafer costs upward by triple digits. The United States sources 95% of gallium from China, creating procurement risk for high-electron-mobility transistor wafers that underpin many microwave diodes. Manufacturers react by dual-sourcing, recycling scrap, and increasing long-term contracts, yet near-term volatility still compresses gross margins.

Other drivers and restraints analyzed in the detailed report include:

  1. Expansion of Automotive Radar and ADAS Adoption
  2. Growth of LEO Satellite Constellations
  3. Semiconductor Capacity Constraints and Supply-Chain Risk

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

PIN variants accounted for 28.75% of the RF and microwave diodes market share in 2025, anchored by their role in RF switching matrices and variable attenuators. Telecommunications OEMs value their robust power-handling capability and wide dynamic-range linearity, attributes critical for base-station upgrades. Defense radar retrofits and satellite transponders also lock in long-lifecycle design wins that stabilize volume demand. The RF and microwave diodes market size for Schottky devices is projected to expand at 5.12% CAGR, reflecting mmWave circuit migration that favors their low forward voltage and fast recovery properties. Emerging 60-90 GHz automotive imaging radar and 77 GHz short-range modules continue to displace PIN solutions in detector chains, reinforcing Schottky-unit momentum.

Designers maintain varactor adoption for frequency synthesis in VCOs because hyperabrupt junction profiles afford tuning ratios exceeding 8:1. Gunn and tunnel diodes remain niche, yet specialized high-power instrumentation and very-low-phase-noise oscillators preserve consistent demand. Zener regulation diodes capture share in bias networks for high-power GaN MMICs, especially where precise over-voltage protection is mandatory.

The 3-8 GHz class retained 31.85% revenue in 2025, driven by radar altimeters, satellite downlinks, and 5 GHz Wi-Fi access points. Solid installed bases in civil aviation and maritime radar extend product lifetime and underpin after-market diode sales. However, above-40 GHz mmWave demand grows at a 5.42% CAGR as operators commercialize fixed-wireless access and automotive OEMs transition from traditional 24 GHz to 77 GHz radar platforms. The RF and microwave diodes market size contribution from the Ka/V-band (20-40 GHz) segment rises with LEO feeder-links and airborne satcom installations that require narrow beamwidth antennas. Up-to-3 GHz devices keep supplying high-volume IoT modules where cost outweighs performance. Ku/K-band diodes slated for 12-18 GHz remain steady, buoyed by defense seeker upgrades and moderate growth in broadcast satcom ground terminals.

The RF and Microwave Diodes Report is Segmented by Product Type (PIN Diodes, Schottky Diodes, and More), Frequency Band (Up To 3 GHz, 3-8 GHz C-/X-Band, and More), Material Technology (Silicon, Gallium Arsenide, and More), End-User Industry (Automotive, Consumer Electronics, and More), and Geography (North America, South America, Europe, Asia-Pacific, and More). The Market Forecasts are Provided in Terms of Value (USD).

Geography Analysis

Asia-Pacific held 44.25% of 2025 revenue and is projected to grow at 4.51% CAGR to 2031, supported by China's USD 295 billion domestic semiconductor initiative and Japan's JPY 3.9 trillion (USD 26 billion) revival program that anchors next-generation wafer capacity. Government incentives accelerate build-outs in epi-growth, wafer-level packaging, and RF front-end module assembly. The vibrant contract-manufacturing base in Taiwan and South Korea augments scale advantages that sustain regional leadership.

North America benefits from the USD 39 billion CHIPS Act, which subsidizes new 200 mm and 300 mm fabs dedicated to RF power and analog devices. Clean-room expansions by MACOM in Massachusetts and North Carolina will reinforce domestic GaN-on-SiC supply and mitigate geopolitical supply risk. Export-control tightening restricts high-frequency device transfers, channeling government and defense demand toward U.S. suppliers. Canada and Mexico contribute niche assembly and test capacity, leveraging USMCA rules of origin to serve automotive clients.

Europe enjoys steady diode consumption through automotive radar mandates and Industry 4.0 factory upgrades. Germany's tier-1 OEMs employ 77 GHz radar in premium and mass-market models, propelling continental demand. France and the United Kingdom support aerospace and satellite programs that specify radiation-hardened diodes. Meanwhile, Middle East and African operators deploy 5G fixed-wireless access in underserved rural areas, but macroeconomic headwinds keep near-term volumes modest.

  1. Microchip Technology Inc.
  2. Infineon Technologies AG
  3. Diodes Incorporated
  4. MACOM Technology Solutions Holdings, Inc.
  5. Nexperia B.V. (Wingtech Technology Co., Ltd.)
  6. onsemi (Semiconductor Components Industries, LLC)
  7. ROHM Co., Ltd.
  8. Vishay Intertechnology, Inc.
  9. Toshiba Electronic Devices & Storage Corporation
  10. Renesas Electronics Corporation
  11. STMicroelectronics N.V.
  12. PANJIT International Inc.
  13. Suzhou Good-Ark Electronics Co., Ltd.
  14. Skyworks Solutions, Inc.
  15. Qorvo, Inc.
  16. Broadcom Inc. (Avago Technologies)
  17. Excelitas Technologies Corp.
  18. SemiGen, Inc.
  19. Richardson Electronics, Ltd.
  20. Central Semiconductor Corp.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Proliferation of global 5G infrastructure
    • 4.2.2 Rising IoT and smart-consumer electronics demand
    • 4.2.3 Expansion of automotive radar and ADAS adoption
    • 4.2.4 Growth of LEO satellite constellations
    • 4.2.5 mmWave radar uptake in industrial drones and robots
    • 4.2.6 Shift toward wide-bandgap (GaN/SiC) diode technology
  • 4.3 Market Restraints
    • 4.3.1 Volatile raw-material prices (Ga, Si, SiC, InP)
    • 4.3.2 Semiconductor capacity constraints and supply chain risk
    • 4.3.3 Thermal-management challenges at more than 40 GHz
    • 4.3.4 Export-control restrictions on high-freq devices
  • 4.4 Value Chain Analysis
  • 4.5 Technological Outlook
  • 4.6 Regulatory Landscape
  • 4.7 Investment Analysis
  • 4.8 Porter's Five Forces Analysis
    • 4.8.1 Bargaining Power of Suppliers
    • 4.8.2 Bargaining Power of Buyers
    • 4.8.3 Threat of New Entrants
    • 4.8.4 Threat of Substitutes
    • 4.8.5 Intensity of Competitive Rivalry
  • 4.9 Impact of Macroeconomic Factors on the Market

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Type
    • 5.1.1 PIN Diodes
    • 5.1.2 Schottky Diodes
    • 5.1.3 Varactor (Tuning) Diodes
    • 5.1.4 Gunn Diodes
    • 5.1.5 Tunnel Diodes
    • 5.1.6 Zener Diodes
    • 5.1.7 Other Diodes
  • 5.2 By Frequency Band
    • 5.2.1 Up to 3 GHz
    • 5.2.2 3 - 8 GHz (C-/X-Band)
    • 5.2.3 8 - 20 GHz (Ku-/K-Band)
    • 5.2.4 20 - 40 GHz (Ka-/V-Band)
    • 5.2.5 Above 40 GHz (mmWave)
  • 5.3 By Material Technology
    • 5.3.1 Silicon (Si)
    • 5.3.2 Gallium Arsenide (GaAs)
    • 5.3.3 Gallium Nitride (GaN)
    • 5.3.4 Silicon Carbide (SiC)
    • 5.3.5 Other Materials
  • 5.4 By End-user Industry
    • 5.4.1 Automotive
    • 5.4.2 Consumer Electronics
    • 5.4.3 Telecommunications and Networking
    • 5.4.4 Industrial Manufacturing and Automation
    • 5.4.5 Medical and Healthcare
    • 5.4.6 Aerospace and Defense
    • 5.4.7 Energy and Utilities
    • 5.4.8 Other Industries
  • 5.5 By Geography (Value)
    • 5.5.1 North America
      • 5.5.1.1 United States
      • 5.5.1.2 Canada
      • 5.5.1.3 Mexico
    • 5.5.2 South America
      • 5.5.2.1 Brazil
      • 5.5.2.2 Argentina
      • 5.5.2.3 Rest of South America
    • 5.5.3 Europe
      • 5.5.3.1 Germany
      • 5.5.3.2 United Kingdom
      • 5.5.3.3 France
      • 5.5.3.4 Italy
      • 5.5.3.5 Rest of Europe
    • 5.5.4 Asia-Pacific
      • 5.5.4.1 China
      • 5.5.4.2 Japan
      • 5.5.4.3 South Korea
      • 5.5.4.4 India
      • 5.5.4.5 Rest of Asia-Pacific
    • 5.5.5 Middle East
      • 5.5.5.1 Saudi Arabia
      • 5.5.5.2 United Arab Emirates
      • 5.5.5.3 Rest of Middle East
    • 5.5.6 Africa
      • 5.5.6.1 South Africa
      • 5.5.6.2 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Microchip Technology Inc.
    • 6.4.2 Infineon Technologies AG
    • 6.4.3 Diodes Incorporated
    • 6.4.4 MACOM Technology Solutions Holdings, Inc.
    • 6.4.5 Nexperia B.V. (Wingtech Technology Co., Ltd.)
    • 6.4.6 onsemi (Semiconductor Components Industries, LLC)
    • 6.4.7 ROHM Co., Ltd.
    • 6.4.8 Vishay Intertechnology, Inc.
    • 6.4.9 Toshiba Electronic Devices & Storage Corporation
    • 6.4.10 Renesas Electronics Corporation
    • 6.4.11 STMicroelectronics N.V.
    • 6.4.12 PANJIT International Inc.
    • 6.4.13 Suzhou Good-Ark Electronics Co., Ltd.
    • 6.4.14 Skyworks Solutions, Inc.
    • 6.4.15 Qorvo, Inc.
    • 6.4.16 Broadcom Inc. (Avago Technologies)
    • 6.4.17 Excelitas Technologies Corp.
    • 6.4.18 SemiGen, Inc.
    • 6.4.19 Richardson Electronics, Ltd.
    • 6.4.20 Central Semiconductor Corp.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-need Assessment