查看购物车
  • Traditional Chinese
  • English
  • Japanese
封面
市场调查报告书
商品编码
1842540

功率放大器：市场份额分析、行业趋势、统计数据和成长预测（2025-2030）

Power Amplifier - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 113 Pages | 商品交期: 2-3个工作天内

价格

※ 本网页内容可能与最新版本有所差异。详细情况请与我们联繫。

简介目录

预计功率放大器市场规模到 2025 年将达到 282 亿美元，到 2030 年将达到 395.5 亿美元，复合年增长率为 7.0%。

功率放大器-市场-IMG1

5G 的快速部署、Wi-Fi 6/7 更新週期的延长以及汽车行业对高效 D 类音讯平台日益增长的需求，共同支撑了过去一年的收益成长。 GaN 装置在大型基地台无线电领域持续取代传统的 GaAs，为营运商提供更高的功率密度和更低的能耗。同时，亚太地区在行动电话功率放大器后端组件方面保持了成本领先地位，使区域供应商能够加快多频段射频前端的上市时间。虽然中频宽（1-6 GHz）仍然是基础设施和家用电子电器产品性能和价格的最佳选择，但随着卫星宽频和固定无线接入在 2024 年和 2025 年初的扩展，20 GHz 以上的毫米波放大器的出货量增长最快。

全球功率放大器市场趋势和洞察

5G Massive-MIMO 中的 GaN PA

降低每处理比特的能耗。典型的大型基地台无线电单元工作在 1.35 GHz 至 7.6 GHz 的频率范围内，在 2024 年的现场部署中，其漏极效率高达 38%，从而降低了通讯业者的运营成本。 GaN晶粒的更小尺寸使其能够实现更密集的天线面板和简化的热布局，从而实现 64-T/64-R 阵列的大规模出货，用于都市区密集化计划。日本和韩国的本地通讯业者利用效率提升来遵守碳减排蓝图，在 2025 年的竞标週期中加大了对 GaN 前端模组的采购力度。随着每瓦成本的持续下降，到 2028 年，GaN 在功率放大器市场的渗透率应能与 GaAs 在大型基地台的渗透率持平。

Wi-Fi 6/7路由器更新

家庭和企业网路基地台供应商正在加速在2024年推出第二代Wi-Fi 6和早期Wi-Fi 7，这需要能够维持5 GHz和6 GHz多链路运作的中功率线性功率放大器。 AsiaRF的AP7988-002平台等解决方案整合了高功率前端模组，可将吞吐量扩展到19 Gbps，从而提高了射频前端的单价。 2025年第一季，HPE Aruba Networking发布了一款三频Wi-Fi 7网路基地台，总容量提升了30%，这推动了对具有增强EVM和相邻频道洩漏规格的高阶晶片的需求。这项更新週期将使功率放大器市场至少在2027年保持强劲的出货量成长轨迹。

GaAs晶圆供应限制推高BOM成本

出口限制限制了中国冶炼厂的产量，导致2024年下半年镓供应紧张，导致砷化镓外延片价格上涨高达18%。因此，多层射频前端模组面临材料成本上升的局面，挤压了行动电话OEM厂商的利润空间，并加速其向硅基氮化镓製程的转型。 Finwave半导体公司已与GlobalFoundries签署晶圆代工厂协议，将用于6GHz以下行动电话的增强型硅基氮化镓商业化，旨在抵消砷化镓的成本波动。虽然长期多元化将限制通膨风险，但短期采购限制正在使功率放大器市场的复合年增长率降低近一个百分点。

細項分析

由于GaAs装置在1-6 GHz行动电话插座中占据主导地位，到2024年，其收入将保持41.0%的份额，而GaN装置的出货量将因大型基地台部署和Ku波段网关而激增。预计到2030年，GaN的复合年增长率将达到17.5%，到预测期结束时，将占据无线接入基础设施功率放大器市场的近一半。 Qorvo在将其3.5 GHz Doherty级迁移到GaN-on-SiC后，在相同输出功率下，结温降低了15°C，这表明运营商的拥有成本更低。

硅锗对于相位阵列成形核心至关重要，而体硅CMOS则适用于低功耗蓝牙和Wi-Fi物联网节点。 IMEC对GaN MISHEMT偏压稳定性的研究消除了先前限制30 GHz以上漏极效率的闸极滞后障碍，为GaN在行动装置毫米波模组中的广泛应用铺平了道路。新开发的钻石基GaN基板有望提供额外的热余量，这是后续6G和X波段雷达设计的关键推动因素。

在5G宏站、小型基地台和通讯地球站的推动下，射频和微波类别占2024年总收入的57.3%。 Filtronic交付了Ku波段GaN MMIC，其PAE性能比领先的GaAs产品线高出40%，并实现了更紧凑的阵列孔径。音频功率放大器是一个规模虽小但成长迅速的细分市场。由于智慧音箱和多驱动器车载娱乐系统的普及，其出货量正在成长，而GaN FET消除了死区时间限制，而死区时间限制曾限制了高功率D类电路板中硅MOSFET的保真度。

用于等离子体和加热的工业和科学射频发生器也推动了对碳化硅 (SiC) 和氮化镓 (GaN) 电晶体的需求。德克萨斯(TI) 透过扩展其宽频 LDMOS 预驱动器产品目录，以满足工业雷射和 MRI 磁铁中的功率级需求，增强了其射频产品类型作为功率放大器市场收益驱动力的作用。

功率放大器市场按技术（硅、砷化镓等）、产品类型（音讯放大器、射频/微波功率放大器）、频宽（低于 1 GHz、1-6 GHz 等）、类别（A 类、B 类、AB 类等）、垂直（消费性电器、工业、其他）和地区（北美、南美、欧洲、亚洲、中东和非洲）。

区域分析

2024年，亚太地区将占全球销售额的48.7%，这主要得益于中国行动电话组装厂的推动，这些工厂消耗了该地区一半以上的低频宽砷化镓（GaAs ）晶片。韩国晶圆厂利用垂直整合提升5G射频前端产量，而日本材料製造商则扩大了碳化硅（SiC）晶圆产量，以弥补氮化镓（GaN）基板的缺口。在印度，与智慧型手机EMS厂商生产连结奖励计画刺激了国内需求，催生了一个新兴但充满活力的射频测试和封装公司丛集。短期内，亚洲优先发展自身化合物半导体供应链的政策将巩固其在功率放大器市场的区域主导地位。

北美地区按以金额为准排名第二。 Qorvo、Broadcom 和 Wolfspeed 等领导企业利用其在 GaN 功率密度和热感封装方面的专利组合，赢得了新的国防和 5G O-RAN 奖项。美国国防部的雷达现代化计画采用了X波段GaN 模组，其元件平均售价显着超过商用级。通讯业者继续成为主要买家，在密集的城市丛集中将中频载波升级到 64T/64R 阵列。

欧洲市场份额主要由德国和法国占据，汽车製造商和航太製造商纷纷将高线性功率放大器应用于车载音响、ADAS和多频段卫星通讯。欧盟生态设计閒置功率法规推动了D类功率放大器的快速迁移，导致传统库存与新规格之间出现暂时性不匹配。英国工厂透过公私合作探索钻石氮化镓外延技术，以维持与亚洲同行的竞争力。

中东和非洲地区虽然规模较小，但成长最快，复合年增长率达11.4%，这得益于Ka波段电信港的扩建和政府低轨连接计画的推动。沙乌地阿拉伯和奈及利亚的国营营运商投资了整合40W Ku波段功率放大器（SSPA）的网关，扩大了其在功率放大器市场的潜在份额。受巴西5G中频段竞标和政府对农村宽频的支持推动，南美洲持续保持温和成长。

其他福利：

  • Excel 格式的市场预测 (ME) 表
  • 3个月的分析师支持

目录

第一章 引言

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章 市场状况

  • 市场概况
  • 市场驱动因素
    • 5G Massive-MIMO 中的 GaN PA 集成
    • 升级 Wi-Fi 6/7 路由器以增强中功率PA
    • D类音频PA在电动车资讯娱乐系统与ADAS系统的应用
    • LEO卫星星系驱动 Ku/ Ka波段SSPA
    • 工业4.0推动智慧工厂射频加热需求
    • O-RAN碎片化为多供应商PA创造了机会
  • 市场限制
    • GaAs晶圆供应限制推高BOM成本
    • 欧盟生态设计音频功率放大器的閒置功率限制
    • 中国无晶圆厂的进入侵蚀了低端CMOS PA的价格
    • 手机中 28GHz 以上硅功率放大器的温度控管限制
  • 价值链分析
  • 监理展望
  • 技术展望
  • 五力分析
    • 新进入者的威胁
    • 买方的议价能力
    • 供应商的议价能力
    • 替代品的威胁
    • 竞争对手之间的竞争
  • 投资分析
  • 关键绩效指标
  • 宏观经济因素的影响

第五章市场规模及成长预测

  • 依技术
    • 硅（Si）
    • 砷化镓（GaAs）
    • 氮化镓（GaN）
    • 硅锗（SiGe）
    • 互补型MOS（CMOS）
    • 其他技术
  • 按产品
    • 音频功率放大器
    • 射频/微波功率放大器
  • 按频宽
    • 低于1 GHz
    • 1-6 GHz
    • 6-20 GHz
    • 超过 20 GHz
  • 按类别
    • A类
    • B类
    • AB类
    • D类
    • E/F类等
  • 按行业
    • 消费性电子产品
    • 产业
    • 通讯业
    • 车
    • 其他行业
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
    • 南美洲
      • 巴西
      • 阿根廷
      • 南美洲其他地区
    • 欧洲
      • 德国
      • 英国
      • 法国
      • 义大利
      • 瑞典
      • 丹麦
      • 其他欧洲国家
    • 亚太地区
      • 中国
      • 日本
      • 韩国
      • 印度
      • 其他亚太地区
    • 中东和非洲
      • 中东
      • 沙乌地阿拉伯
      • UAE
      • 土耳其
      • 其他中东地区
      • 非洲
      • 南非
      • 其他非洲国家

第六章 竞争态势

  • 市场集中度
  • 策略倡议
  • 市占率分析
  • 公司简介
    • Broadcom Inc.
    • Qorvo Inc.
    • Skyworks Solutions Inc.
    • Qualcomm Technologies Inc.
    • Infineon Technologies AG
    • Texas Instruments Inc.
    • Analog Devices Inc.
    • NXP Semiconductors NV
    • STMicroelectronics NV
    • Renesas Electronics Corp.
    • Wolfspeed Inc.
    • MACOM Technology Solutions Inc.
    • ON Semiconductor Corp.
    • Microchip Technology Inc.
    • Rohm Semiconductor
    • Panasonic Corp.
    • Murata Manufacturing Co. Ltd.
    • Mini-Circuits
    • CAES（Cobham Advanced Electronics）
    • Sumitomo Electric Device Innovations
    • Empower RF Systems
    • Falcomm Inc.
    • Finwave Semiconductor Inc.

第七章 市场机会与未来展望

简介目录
Product Code: 66924

The power amplifier market size was valued at USD 28.20 billion in 2025 and is forecast to reach USD 39.55 billion by 2030, reflecting a compound annual growth rate (CAGR) of 7.0%.

Power Amplifier - Market - IMG1

Rapid 5G roll-outs, expanding Wi-Fi 6/7 refresh cycles, and growing automotive demand for high-efficiency Class-D audio platforms have underpinned revenue expansion over the past year. GaN devices continued to displace legacy GaAs in macro-cell radios, offering higher power density and reduced energy consumption for operators. Meanwhile, Asia-Pacific kept its cost-leadership advantage in handset power-amplifier back-end assembly, enabling regional vendors to accelerate time-to-market for multi-band RF front ends. Mid-band spectrum (1-6 GHz) remained the performance-price sweet spot for both infrastructure and consumer electronics, yet mmWave amplifiers above 20 GHz recorded the fastest unit growth as satellite broadband and fixed-wireless access scaled in 2024 and early 2025.

Global Power Amplifier Market Trends and Insights

GaN PAs in 5G Massive-MIMO

reduce energy use per bit handled. Typical macro-cell radio units operating from 1.35 GHz to 7.6 GHz reported up to 38% drain efficiency in field deployments during 2024, cutting operating expenditure for carriers. The smaller footprint of GaN die enabled denser antenna panels and simplified thermal layouts, allowing 64-T/64-R arrays to ship in volume for urban densification projects. Regional operators in Japan and South Korea capitalized on the efficiency gains to comply with carbon-reduction roadmaps, reinforcing procurement of GaN front-end modules across 2025 bid cycles. As costs per watt continue to fall, GaN penetration in the power amplifier market should approach parity with GaAs in macro-cells before 2028.

Wi-Fi 6/7 Router Refresh

Home and enterprise access-point vendors accelerated second-generation Wi-Fi 6 and early Wi-Fi 7 launches in 2024, requiring mid-power linear PAs capable of sustaining multi-link operation across 5 GHz and 6 GHz. Solutions such as AsiaRF's AP7988-002 platform integrated a high-power front-end module that extended throughput to 19 Gbps, thereby lifting unit ASPs for RF front ends. In Q1 2025, HPE Aruba Networking released tri-band Wi-Fi 7 access points that improved aggregate capacity by 30%, intensifying demand for premium silicon with tighter EVM and adjacent-channel leakage specifications. This refresh cycle is set to keep the power amplifier market on a robust shipment trajectory through at least 2027.

GaAs Wafer Supply Constraints Elevating BOM Costs

Gallium availability tightened in late 2024 after export-control measures constrained Chinese refinery output, inflating GaAs epi-wafer pricing by up to 18%. Multilayer RF front-end modules, therefore, faced higher bill-of-materials outlays, pressuring handset OEM margins and encouraging an accelerated pivot toward GaN-on-silicon processes. Finwave Semiconductor signed a foundry pact with GlobalFoundries to commercialize enhancement-mode GaN-on-Si for sub-6 GHz phones, aiming to neutralize GaAs cost volatility. While long-term diversification will damp inflationary risk, short-run sourcing difficulties are trimming the headline CAGR of the power amplifier market by nearly one percentage point.

Other drivers and restraints analyzed in the detailed report include:

  1. EV Infotainment and ADAS Adoption of Class-D Audio PAs
  2. LEO Satellite Constellations Driving Ku/Ka-band SSPAs
  3. EU Eco-Design Idle-Power Caps on Audio PAs

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

GaAs devices retained a 41.0% revenue position in 2024 on the strength of entrenched 1-6 GHz handset sockets, yet GaN shipments surged on macro-cell roll-outs and Ku-band gateways. GaN's 17.5% CAGR through 2030 is projected to lift its portion of the power amplifier market size for radio-access infrastructure to almost half by the end of the forecast window. Qorvo documented a 15 °C reduction in junction temperature at identical output power after migrating a 3.5 GHz Doherty stage to GaN-on-SiC, validating cost-of-ownership savings for operators.

Silicon-germanium remained integral to phased-array beamforming cores, whereas bulk CMOS stayed relevant in low-power Bluetooth and Wi-Fi IoT nodes. Research at IMEC on GaN MISHEMT bias stability removed gate-lag barriers that previously capped drain efficiency above 30 GHz, clearing a pathway for GaN proliferation in handset mmWave modules. Emerging GaN-on-diamond substrates promise further thermal headroom, a key enabler for subsequent 6G and X-band radar design-ins.

RF and microwave categories generated 57.3% of 2024 revenue, anchored by 5G macros, small cells, and satcom earth stations. Filtronic shipped Ku-band GaN MMICs rated at 80 W that outperformed preceding GaAs line-ups by 40% PAE, unlocking more compact array apertures. Audio power amplifiers contributed a smaller but fast-growing slice: proliferation of smart-speakers and multi-driver in-vehicle entertainment lifted shipments, and GaN FETs removed dead-time limitations that constrained silicon MOSFET fidelity in high-power class-D boards.

Industrial and scientific RF generators for plasma and heating also elevated SiC and GaN transistor demand. Texas Instruments expanded its wideband LDMOS pre-driver catalog to service industrial laser and MRI magnet power stages, reinforcing the RF product category's role as the revenue mainstay of the power amplifier market.

Power Amplifier Market is Segmented by Technology (Silicon, Gallium Arsenide, and More), by Product (Audio Power Amplifiers and RF/Microwave Power Amplifiers), by Frequency Band (< 1 GHz, 1 - 6 GHz, and More), by Class (Class A, Class B, Class AB, and More), by Industry Vertical (Consumer Electronics, Industrial, and More), and by Geography (North America, South America, Europe, Asia-Pacific, and Middle East and Africa).

Geography Analysis

Asia-Pacific generated 48.7% of global revenue in 2024, anchored by China's handset assembly corridors, which consumed more than half of the region's low-band GaAs die. Korean fabs leveraged vertical integration to ramp 5G RF front ends, while Japanese material suppliers expanded SiC wafer output to mitigate GaN substrate gaps. India's production-linked incentives for smartphone EMS houses widened domestic demand, creating a nascent yet vibrant cluster of RF test and packaging firms. Over the near term, Asia's policy emphasis on indigenous compound-semiconductor supply chains is positioned to strengthen regional control over the power amplifier market.

North America ranked second by value. Dominant players such as Qorvo, Broadcom, and Wolfspeed exploited patent portfolios in GaN power density and thermal packaging to capture new defense and 5G O-RAN awards. The Pentagon's radar-modernization programs adopted X-band GaN tiles, pushing device ASPs significantly above commercial grades. Telecom operators remained central buyers, upgrading mid-band carriers to 64T/64R arrays in dense urban clusters.

Europe's share centered on Germany and France, where automotive and aerospace manufacturers absorbed high-linearity PAs for in-cabin audio, ADAS, and multi-band sat-comms. The EU Eco-Design idle-power regulation prompted a swift transition toward Class-D, creating a temporary mismatch between legacy inventory and new-build specs. United Kingdom fabs explored GaN-on-diamond epitaxy through public-private consortia to retain competitiveness against Asian peers.

The Middle East and Africa region, though smaller, exhibited the fastest growth at an 11.4% CAGR, fueled by Ka-band teleport expansion and sovereign LEO connectivity programs. National operators in Saudi Arabia and Nigeria earmarked capex for gateways that integrate 40 W Ku-band SSPAs, broadening the addressable slice of the power amplifier market. South America followed with moderate uptake, led by Brazil's 5G mid-band auctions and state-backed rural broadband.

  1. Broadcom Inc.
  2. Qorvo Inc.
  3. Skyworks Solutions Inc.
  4. Qualcomm Technologies Inc.
  5. Infineon Technologies AG
  6. Texas Instruments Inc.
  7. Analog Devices Inc.
  8. NXP Semiconductors N.V.
  9. STMicroelectronics N.V.
  10. Renesas Electronics Corp.
  11. Wolfspeed Inc.
  12. MACOM Technology Solutions Inc.
  13. ON Semiconductor Corp.
  14. Microchip Technology Inc.
  15. Rohm Semiconductor
  16. Panasonic Corp.
  17. Murata Manufacturing Co. Ltd.
  18. Mini-Circuits
  19. CAES (Cobham Advanced Electronics)
  20. Sumitomo Electric Device Innovations
  21. Empower RF Systems
  22. Falcomm Inc.
  23. Finwave Semiconductor Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Integration of GaN PAs in 5G Massive-MIMO
    • 4.2.2 Wi-Fi 6/7 Router Refresh Boosting Mid-Power PAs
    • 4.2.3 EV Infotainment and ADAS Adoption of Class-D Audio PAs
    • 4.2.4 LEO Satellite Constellations Driving Ku/Ka-band SSPAs
    • 4.2.5 Smart-Factory RF-Heating Demand via Industry 4.0
    • 4.2.6 O-RAN Disaggregation Creating Multi-Vendor PA Opportunities
  • 4.3 Market Restraints
    • 4.3.1 GaAs Wafer Supply Constraints Elevating BOM Costs
    • 4.3.2 EU Eco-Design Idle-Power Caps on Audio PAs
    • 4.3.3 Low-End CMOS PA Price Erosion from Chinese Fabless Entrants
    • 4.3.4 Thermal-Management Limits on >28 GHz Silicon PAs in Handsets
  • 4.4 Value Chain Analysis
  • 4.5 Regulatory Outlook
  • 4.6 Technological Outlook
  • 4.7 Porter's Five Forces
    • 4.7.1 Threat of New Entrants
    • 4.7.2 Bargaining Power of Buyers
    • 4.7.3 Bargaining Power of Suppliers
    • 4.7.4 Threat of Substitutes
    • 4.7.5 Intensity of Competitive Rivalry
  • 4.8 Investment Analysis
  • 4.9 Key Performance Indicators
  • 4.10 Impact of Macroeconomic factors

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Technology
    • 5.1.1 Silicon (Si)
    • 5.1.2 Gallium Arsenide (GaAs)
    • 5.1.3 Gallium Nitride (GaN)
    • 5.1.4 Silicon Germanium (SiGe)
    • 5.1.5 Complementary MOS (CMOS)
    • 5.1.6 Other Technologies
  • 5.2 By Product
    • 5.2.1 Audio Power Amplifiers
    • 5.2.2 RF / Microwave Power Amplifiers
  • 5.3 By Frequency Band
    • 5.3.1 < 1 GHz
    • 5.3.2 1 - 6 GHz
    • 5.3.3 6 - 20 GHz
    • 5.3.4 > 20 GHz
  • 5.4 By Class
    • 5.4.1 Class A
    • 5.4.2 Class B
    • 5.4.3 Class AB
    • 5.4.4 Class D
    • 5.4.5 Class E/F and Others
  • 5.5 By Industry Vertical
    • 5.5.1 Consumer Electronics
    • 5.5.2 Industrial
    • 5.5.3 Telecommunications
    • 5.5.4 Automotive
    • 5.5.5 Other Industry Verticals
  • 5.6 By Geography
    • 5.6.1 North America
      • 5.6.1.1 United States
      • 5.6.1.2 Canada
    • 5.6.2 South America
      • 5.6.2.1 Brazil
      • 5.6.2.2 Argentina
      • 5.6.2.3 Rest of South America
    • 5.6.3 Europe
      • 5.6.3.1 Germany
      • 5.6.3.2 United Kingdom
      • 5.6.3.3 France
      • 5.6.3.4 Italy
      • 5.6.3.5 Sweden
      • 5.6.3.6 Denmark
      • 5.6.3.7 Rest of Europe
    • 5.6.4 Asia-Pacific
      • 5.6.4.1 China
      • 5.6.4.2 Japan
      • 5.6.4.3 South Korea
      • 5.6.4.4 India
      • 5.6.4.5 Rest of Asia-Pacific
    • 5.6.5 Middle East and Africa
      • 5.6.5.1 Middle East
      • 5.6.5.1.1 Saudi Arabia
      • 5.6.5.1.2 UAE
      • 5.6.5.1.3 Turkey
      • 5.6.5.1.4 Rest of Middle East
      • 5.6.5.2 Africa
      • 5.6.5.2.1 South Africa
      • 5.6.5.2.2 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global and Market Level Overview, Core Segments, Financials, Strategic Information, Market Rank/Share, Products and Services, Recent Developments)
    • 6.4.1 Broadcom Inc.
    • 6.4.2 Qorvo Inc.
    • 6.4.3 Skyworks Solutions Inc.
    • 6.4.4 Qualcomm Technologies Inc.
    • 6.4.5 Infineon Technologies AG
    • 6.4.6 Texas Instruments Inc.
    • 6.4.7 Analog Devices Inc.
    • 6.4.8 NXP Semiconductors N.V.
    • 6.4.9 STMicroelectronics N.V.
    • 6.4.10 Renesas Electronics Corp.
    • 6.4.11 Wolfspeed Inc.
    • 6.4.12 MACOM Technology Solutions Inc.
    • 6.4.13 ON Semiconductor Corp.
    • 6.4.14 Microchip Technology Inc.
    • 6.4.15 Rohm Semiconductor
    • 6.4.16 Panasonic Corp.
    • 6.4.17 Murata Manufacturing Co. Ltd.
    • 6.4.18 Mini-Circuits
    • 6.4.19 CAES (Cobham Advanced Electronics)
    • 6.4.20 Sumitomo Electric Device Innovations
    • 6.4.21 Empower RF Systems
    • 6.4.22 Falcomm Inc.
    • 6.4.23 Finwave Semiconductor Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-Space and Unmet-Need Assessment