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市场调查报告书
商品编码
1851785

电力电子：市场份额分析、行业趋势、统计数据和成长预测（2025-2030 年）

Power Electronics - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2025 - 2030)
出版日期: | 出版商: Mordor Intelligence | 英文 152 Pages | 商品交期: 2-3个工作天内

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简介目录

预计到 2025 年，电力电子市场规模将达到 268.4 亿美元，到 2030 年将达到 382.3 亿美元，在此期间的复合年增长率为 7.33%。

电力电子市场-IMG1

这项进展得益于传统硅系统向碳化硅和氮化镓解决方案的持续转型，从而在关键应用中实现了更高的效率、功率密度和更小的尺寸。随着汽车製造商扩大电动车产量、公用事业公司升级逆变器以支援可再生能源以及资料中心营运商采用高压直流架构，市场需求加速成长。宽能带隙的普及也得益于区域政策的支持，这些政策鼓励国内半导体製造和电动车基础设施建设。同时，供应链多元化倡议，尤其是在亚太地区，促进了基板、外延和先进封装的本地化生产，从而缩短了前置作业时间并降低了运输风险。

全球电力电子市场趋势与洞察

加速在电动车快速充电基础设施中采用碳化硅和氮化镓装置

为了达到併并联型效率目标，欧洲充电网路营运商优先采用800V架构，这需要1200V和1700V的碳化硅（SiC）MOSFET。在奖励计画的支持下，计划普遍采用SiC功率级，从而降低了能量损耗并缩小了冷却子系统的尺寸。系统整合商和半导体供应商之间的合作缩短了设计週期，而与汽车原始设备製造商（OEM）的联盟协议则确保了长期的批量供应。互通性法规进一步为基于宽能带隙装置的模组化、高密度充电器创造了更有利的竞争环境。成功的部署吸引了全球的关注，并将欧洲打造成为下一代快速充电解决方案的标竿市场。

亚洲大型太阳能和风力发电厂逆变器升级

中国、印度和越南的大型太阳能发电厂已用碳化硅（SiC）组件取代了传统的硅逆变器，这些组件能够在高温高湿环境下承受高开关频率。 Wolfspeed 最新推出的公用事业级组件具备 3MW 至 5MW 集中式逆变器所需的热循环可靠性。离岸风力发电开发商也采用了类似的功率级，以满足风机机舱的尺寸和重量限制。区域代工厂商透过本地化组装来规避进口关税，并加快了与传统硅逆变器价格的趋同。这些升级符合各国政府的可再生能源组合标准，并有助于维持新兴经济体能源价格的竞争力。

150毫米以上尺寸碳化硅晶圆供应链瓶颈

长期的基板短缺限制了产量成长，导致平均售价居高不下。 Wolfspeed 暂时的流动性问题增加了依赖其 200mm 晶圆蓝图的合作伙伴的风险敞口，并导致瑞萨电子放弃了其原始的 SiC 平台计划。中国企业加快了产能扩张，但在汽车客户的认证方面遇到了障碍。晶圆厂的投产与正式投产之间存在数年的时间差，这使得装置製造商和系统 OEM 厂商的需求预测变得复杂。因此，一些汽车製造商采取了双供应商策略来对冲晶圆配额风险。

细分市场分析

到2030年，功率模组的复合年增长率将达到8.6%，这主要得益于设计团队倾向于采用预封装组件，以简化散热布局和电磁屏蔽。到2024年，分立电晶体和二极体仍将占总收入的46.3%，从而维持了消费性电子和低功率工厂设备的灵活性。功率超过50kW的牵引逆变器和可再生能源转换器对模组的需求激增，这些模组整合了闸极驱动器、温度感测器和隔离功能，从而缩短了开发週期。嵌入式冷却基板已进入试生产阶段，提高了模组的功率密度，并使电动车的逆变器机壳尺寸得以缩小。整合功率IC在100W以下快速充电器适配器中获得了市场份额，它将控制和开关功能整合到单一塑胶封装中，满足了严格的尺寸限制。智慧型手机品牌采用了这些单晶片GaN解决方案，实现了透过紧凑型墙插进行65W充电。随着汽车零件製造商转向800V平台，而消费性电子设计仍保持分立元件的销量，模组化功率电子市场规模预计将稳定成长。

模塑封装已成为市场标准，降低了成本，并提高了在恶劣气候下运行的工业驱动器的防潮性能。製造商利用自动化组装来满足不断增长的生产需求，尤其是在亚太地区。分立元件在照明安定器、家用电器和机器人控制器等应用领域仍然占据重要地位，在这些应用中，客製化的基板布局和多样化的电压等级比整合装置的优势更为显着。预计在预测期内，碳化硅晶圆供应可得性的增加将进一步推动模组化元件市场份额的成长。

到2024年，MOSFET将占总营收的44.1%，复合年增长率达9.1%，成为规模最大且成长最快的装置类别。这种架构有利于渐进式研发，Wolfspeed的第四代平台在维持现有闸极驱动要求的同时，降低了导通电阻。充电器适配器和太阳能微型逆变器中的高频谐振拓扑结构倾向于采用GaN增强型MOSFET，而SiC平面MOSFET在功率超过100kW的车辆牵引级中表现出色。 IGBT仍然是轨道运输推进和大型工业驱动装置的关键元件，满足了对功率等级超出MOSFET实际应用范围的需求。闸流体继续用于併网缓衝启动器和高压直流输电线路，儘管其总体份额有所下降。

装置製造商已推出与碳化硅 (SiC) MOSFET 封装的肖特基二极管，以放宽反向恢復限制并简化基板布局；同时，氮化镓 (GaN) 製造商改进了动态导通电阻 (RDS(on)) 特性，以延长元件在硬开关条件下的使用寿命。由于 MOSFET 的外形尺寸与现有驱动器生态系统相容，降低了系统工程师的设计门槛，因此电力电子市场持续青睐 MOSFET 的创新。未来的市场份额变化将取决于宽能带隙晶圆的价格以及下一代 MOSFET 闸极实现汽车应用认证的速度。

电力电子市场按组件（分立元件、模组、整合功率 IC）、装置类型（MOSFET、IGBT、闸流体、二极体）、材料（硅、碳化硅、其他）、终端用户产业（消费性电器、汽车、ICT 和通讯、工业、非洲与电力、航太和国防、其他）以及产业（消费性电器、汽车、ICT 及通讯、工业、南美、航空航太及

区域分析

亚太地区预计2024年将贡献全球54.4%的收入，以10.2%的复合年增长率进一步扩大领先优势。中国、日本和韩国的国家级计画资助了晶圆厂、模组组装和电动车供应链，确保了基板和先进封装的在地采购生产。日本政府承诺投入670亿美元支持国内半导体产业发展，扶持SONY和三菱电机等公司，并加强与大学的科学研究合作。儘管存在技术领先优势，中国当地仍利用规模经济优势，扩大材料生产和后端组装，从而快速供应区域客户并降低土地成本。

北美保持了其第二大市场的地位，这得益于其强大的技术创新能力以及人工智慧伺服器、电动皮卡和可再生微电网等充满活力的终端市场。各州政府的奖励措施吸引了新的碳化硅晶圆厂，并有助于确保向200毫米製程转型所需的资金。国防采购持续资助抗辐射氮化镓（GaN）的研究，后来被应用于商业通讯系统。随着资料中心营运商采用400V直流架构以减少铜用量并提高机架密度，北美电力电子市场正在蓬勃发展。

欧洲将资源集中于电动车充电走廊和电网级储能。政策制定者强制要求充电硬体互通性，间接推动了碳化硅（SiC）的普及，因为其在800V电压下具有较高的效率。一级汽车供应商与半导体供应商合作，共同开发牵引逆变器，并建立整合参考平台以加速认证。中东和非洲地区起步较小，但投资建造了大型太阳能发电厂和海水淡化设施，这些设施需要性能强大的逆变器。南美洲则从巴西和阿根廷的风能走廊以及鼓励在该地区组装功率模组在地采购政策中获得了商机。总而言之，这些动态表明，电力电子市场在各大洲持续扩张，儘管扩张速度因行业成熟度和政策支持的不同而有所差异。

其他福利：

  • Excel格式的市场预测（ME）表
  • 3个月的分析师支持

目录

第一章 引言

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章 市场情势

  • 市场概览
  • 市场驱动因素
    • 欧洲电动车快速充电基础设施中SiC/GaN装置的采用速度加快
    • 亚洲大型太阳能和风力发电厂的逆变器升级将推动高压功率模组的发展
    • 北美地区5G基地台部署需要高效率射频功率放大器
    • 东南亚7.5kW以上工业电机驱动电气化
    • 中国的电网级电池计画促进了双向功率转换器的发展
    • 美国国防部向全电动平台现代化转型推动电力电子市场加强。
  • 市场限制
    • 150毫米及以上尺寸碳化硅晶圆的供应链瓶颈阻碍了大规模生产。
    • 1.2kV以上模组的封装温度控管限制
    • 200mm宽能带隙晶圆厂的高昂资本支出阻碍了新进者。
  • 供应链分析
  • 监理与技术展望
  • 波特五力分析
    • 供应商的议价能力
    • 买方的议价能力
    • 新进入者的威胁
    • 替代品的威胁
    • 竞争对手之间的竞争
  • 投资与资金筹措分析
  • 评估市场的宏观经济因素

第五章 市场规模与成长预测

  • 按组件
    • 离散的
    • 模组
    • 整合电源IC
  • 依设备类型
    • MOSFET
    • IGBT
    • 闸流体
    • 二极体
  • 材料
    • 硅（Si）
    • 碳化硅（SiC）
    • 氮化镓（GaN）
  • 按最终用户行业划分
    • 消费性电子产品
    • 汽车（电动车、充电）
    • 资讯通信技术与通讯
    • 工业（驱动、自动化）
    • 能源与电力（可再生能源、高压直流输电）
    • 航太/国防
    • 医疗设备
  • 按地区
    • 北美洲
      • 美国
      • 加拿大
      • 墨西哥
    • 欧洲
      • 德国
      • 英国
      • 法国
      • 义大利
      • 其他欧洲地区
    • 亚太地区
      • 中国
      • 日本
      • 韩国
      • 台湾
      • 印度
      • 亚太其他地区
    • 南美洲
      • 巴西
      • 阿根廷
      • 其他南美洲国家
    • 中东和非洲
      • 中东
      • 沙乌地阿拉伯
      • 阿拉伯聯合大公国
      • 土耳其
      • 其他中东地区
      • 非洲
      • 南非
      • 其他非洲地区

第六章 竞争情势

  • 市场集中度
  • 策略性倡议（併购、合资、许可）
  • 市占率分析
  • 公司简介
    • Infineon Technologies AG
    • Mitsubishi Electric Corporation
    • ON Semiconductor Corporation
    • STMicroelectronics NV
    • Texas Instruments Inc.
    • ROHM Co., Ltd.
    • ABB Ltd.
    • Toshiba Electronic Devices & Storage Corp.
    • Vishay Intertechnology Inc.
    • Renesas Electronics Corp.
    • Wolfspeed Inc.
    • Fuji Electric Co., Ltd.
    • SEMIKRON Danfoss
    • Littelfuse Inc.
    • GeneSiC Semiconductor
    • Navitas Semiconductor Corp.
    • GaN Systems Inc.
    • Alpha & Omega Semiconductor
    • Microchip Technology Inc.
    • Diodes Incorporated

第七章 市场机会与未来展望

简介目录
Product Code: 66560

The power electronics market size stood at USD 26.84 billion in 2025 and is forecast to reach USD 38.23 billion by 2030, reflecting a 7.33% CAGR during the period.

Power Electronics - Market - IMG1

Continued migration from legacy silicon systems toward silicon-carbide and gallium-nitride solutions underpins this advance, enabling higher efficiency, power density, and smaller form factors in critical applications. Demand accelerated as automakers scaled electric-vehicle production, utilities upgraded renewable-energy inverters, and data-center operators adopted high-voltage direct-current architectures. Wide-bandgap adoption also benefited from regional policy support that encouraged domestic semiconductor manufacturing and electric-mobility infrastructure. Meanwhile, supply-chain diversification initiatives, especially across Asia-Pacific, bolstered localized production of substrates, epitaxy, and advanced packaging, reducing lead times and transportation risk.

Global Power Electronics Market Trends and Insights

Accelerated adoption of SiC and GaN devices in EV fast-charging infrastructure

European charging-network operators prioritized 800 V architectures that require 1,200 V and 1,700 V SiC MOSFETs to meet grid-connection efficiency targets. Projects backed by incentive programs are standardized on SiC power stages that cut energy losses and shrink cooling subsystems. Collaboration between system integrators and semiconductor suppliers shortened design cycles, while alliance agreements with automotive OEMs ensured long-term volume commitments. Interoperability regulations further created a level playing field that favors modular, high-density chargers based on wide-bandgap devices. Successful deployments draw global attention, positioning Europe as the reference market for next-generation fast-charging solutions.

Large-scale solar and wind farm inverter upgrades in Asia

Utility-scale solar farms in China, India, and Vietnam replaced legacy silicon inverters with SiC-based modules that withstand high switching frequencies in hot, humid environments. Wolfspeed's latest utility modules provided the thermal-cycling reliability demanded by centralized 3 MW to 5 MW inverters. Offshore wind developers adopted similar power stages to meet size and weight limits on turbine nacelles. Regional contract manufacturers localized assembly to avoid import duties, accelerating price parity with conventional silicon alternatives. These upgrades align with government renewable portfolio standards, keeping energy tariffs competitive across emerging economies.

Supply-chain bottlenecks for 150 mm and larger SiC wafers

Chronic substrate shortages constrained volume ramps, keeping average selling prices elevated. Wolfspeed's temporary liquidity challenges increased risk exposure for partners that relied on its 200 mm roadmap, leading Renesas to exit its planned SiC platform. Chinese entrants accelerated capacity additions yet faced qualification hurdles with automotive customers. The multiyear lag between announced fabs and production readiness complicated demand-forecast accuracy for both device makers and system OEMs. As a result, several automakers executed dual-sourcing strategies to hedge wafer allocations.

Other drivers and restraints analyzed in the detailed report include:

  1. 5G base-station roll-outs requiring high-efficiency RF power amplifiers
  2. Electrification of industrial motor drives above 7.5 kW in Southeast Asia
  3. Packaging thermal-management constraints above 1.2 kV modules

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Power modules delivered 8.6% CAGR through 2030 as design teams opted for pre-packaged assemblies that simplify thermal layout and electromagnetic shielding. In 2024, discrete transistors and diodes still contributed 46.3% of revenue, preserving flexibility in consumer and low-power factory equipment. Demand for modules surged in traction inverters and renewable-energy converters above 50 kW where integrating gate drivers, temperature sensors, and isolation reduced development cycles. Embedded-cooling substrates entered pilot production, pushing module power density upward and enabling smaller inverter housings in electric vehicles. Integrated power ICs gained share in fast-charger adapters below 100 W, combining control and switching in a single plastic package that meets stringent size constraints. Smartphone brands adopted these monolithic GaN solutions to achieve 65 W charging in compact wall plugs. The power electronics market size for modules is forecast to expand steadily as automotive suppliers transition to 800 V platforms, while consumer design wins sustain volume in discrete devices.

Market-wide standardization on transfer-molded packages offered cost reductions and better moisture resistance for industrial drives operating in harsh climates. Manufacturers leveraged automated assembly lines to meet rising output needs, particularly across Asia-Pacific. Discrete devices nevertheless preserved a sizeable presence in lighting ballasts, home appliances, and robotic controllers, where customized board layouts and diverse voltage classes outweighed the integration advantage. Over the forecast span, increased silicon-carbide wafer availability will further tilt the share toward modules, yet discrete volumes will decline gradually rather than collapse.

MOSFETs captured 44.1% of 2024 revenue and their 9.1% CAGR positions them as both the largest and fastest-growing device category. The architecture lends itself to incremental R&D, evident in Wolfspeed's Gen 4 platform that reduced on-state resistance while maintaining familiar gate-drive requirements. High-frequency resonance topologies in charger adapters and solar micro-inverters gravitated to GaN enhancement-mode MOSFETs, whereas SiC planar MOSFETs excelled in vehicle traction stages above 100 kW. IGBTs remained essential in rail propulsion and large industrial drives, sustaining demand in power classes beyond practical MOSFET limits. Thyristors continued serving grid-tied soft-starters and HVDC links, though their overall contribution shrank.

Device-makers introduced co-packaged Schottky diodes with SiC MOSFETs, easing reverse-recovery constraints and simplifying board layouts. Meanwhile, gallium-nitride suppliers improved dynamic-RDS(on) behavior to extend device life in hard-switching conditions. The power electronics market continues to reward MOSFET innovation because the form factor aligns with existing driver ecosystems, lowering design barriers for system engineers. Future share shifts will hinge on wide-bandgap wafer pricing and the speed of automotive qualification for next-generation MOSFET gates.

Power Electronics Market is Segmented by Component (Discrete, Module, and Integrated Power IC), Device Type (MOSFET, IGBT, Thyristor, and Diode), Material (Silicon, Silicon Carbide, and More), End-User Industry (Consumer Electronics, Automotive, ICT and Telecommunication, Industrial, Energy and Power, Aerospace and Defense, and More), and Geography (North America, Europe, Asia-Pacific, South America, Middle East and Africa).

Geography Analysis

Asia-Pacific generated 54.4% of global revenue in 2024 and is widening its lead with a 10.2% CAGR. National programs in China, Japan, and South Korea funded wafer fabs, module assembly, and electric-vehicle supply chains, ensuring local availability of substrates and advanced packaging. Japanese authorities pledged USD 67 billion to support domestic semiconductor fleets, aiding companies such as Sony and Mitsubishi Electric, and reinforcing university research collaborations. Mainland China leveraged economies of scale in material growth and backend assembly to supply regional customers quickly, lowering landed cost despite technology gaps in the leading edge.

North America remained the second-largest region, pairing innovation strengths with thriving end-markets in AI servers, electric pickup trucks, and renewable microgrids. State-level incentives attracted new SiC wafer plants and helped secure capital for 200 mm transitions. Defense procurement continued to fund radiation-tolerant GaN research, which later filtered into commercial telecom systems. The power electronics market size in North America is on an upward trajectory as data-center operators adopt 400 V DC architectures that reduce copper usage and improve rack density.

Europe focused resources on e-mobility charging corridors and grid-level storage. Policymakers mandated interoperability of charging hardware, indirectly favoring SiC adoption due to its efficiency at 800 V. Automotive Tier 1 suppliers partnered with semiconductor vendors to co-develop traction inverters, creating integrated reference platforms that accelerate homologation. The Middle East and Africa region, while starting from a smaller base, invested in large photovoltaic plants and desalination facilities that require robust inverter stages. South America's opportunities emerged from wind corridors in Brazil and Argentina and from local content rules that encourage assembly of power modules within the region. Collectively, these dynamics keep the power electronics market expanding on every continent, though rates vary with industrial maturity and policy support.

  1. Infineon Technologies AG
  2. Mitsubishi Electric Corporation
  3. ON Semiconductor Corporation
  4. STMicroelectronics N.V.
  5. Texas Instruments Inc.
  6. ROHM Co., Ltd.
  7. ABB Ltd.
  8. Toshiba Electronic Devices & Storage Corp.
  9. Vishay Intertechnology Inc.
  10. Renesas Electronics Corp.
  11. Wolfspeed Inc.
  12. Fuji Electric Co., Ltd.
  13. SEMIKRON Danfoss
  14. Littelfuse Inc.
  15. GeneSiC Semiconductor
  16. Navitas Semiconductor Corp.
  17. GaN Systems Inc.
  18. Alpha & Omega Semiconductor
  19. Microchip Technology Inc.
  20. Diodes Incorporated

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Accelerated Adoption of SiC/GaN Devices in EV Fast-Charging Infrastructure across Europe
    • 4.2.2 Large-Scale Solar and Wind Farm Inverter Upgrades in Asia Driving High-Voltage Power Modules
    • 4.2.3 5G Base-Station Roll-outs Requiring High-Efficiency RF Power Amplifiers in North America
    • 4.2.4 Electrification of Industrial Motor Drives Exceeding 7.5 kW in South-East Asia
    • 4.2.5 Grid-Level Battery Storage Programs in China Boosting Bidirectional Power Converters
    • 4.2.6 U.S. DoD Modernization Toward All-Electric Platforms Stimulating Rugged Power Electronics
  • 4.3 Market Restraints
    • 4.3.1 Supply-Chain Bottlenecks for 150 mm+ SiC Wafers Limiting Volume Production
    • 4.3.2 Packaging Thermal-Management Constraints Above 1.2 kV Modules
    • 4.3.3 High CAPEX for 200 mm Wide-Bandgap Fabs Hindering New Entrants
  • 4.4 Supply Chain Analysis
  • 4.5 Regulatory and Technological Outlook
  • 4.6 Porter's Five Forces Analysis
    • 4.6.1 Bargaining Power of Suppliers
    • 4.6.2 Bargaining Power of Buyers
    • 4.6.3 Threat of New Entrants
    • 4.6.4 Threat of Substitutes
    • 4.6.5 Intensity of Competitive Rivalry
  • 4.7 Investment and Funding Analysis
  • 4.8 Assessment of macroeconomic factors on the market

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Component
    • 5.1.1 Discrete
    • 5.1.2 Module
    • 5.1.3 Integrated Power IC
  • 5.2 By Device Type
    • 5.2.1 MOSFET
    • 5.2.2 IGBT
    • 5.2.3 Thyristor
    • 5.2.4 Diode
  • 5.3 By Material
    • 5.3.1 Silicon (Si)
    • 5.3.2 Silicon Carbide (SiC)
    • 5.3.3 Gallium Nitride (GaN)
  • 5.4 By End-user Industry
    • 5.4.1 Consumer Electronics
    • 5.4.2 Automotive (xEV, Charging)
    • 5.4.3 ICT and Telecommunication
    • 5.4.4 Industrial (Drives, Automation)
    • 5.4.5 Energy and Power (Renewables, HVDC)
    • 5.4.6 Aerospace and Defense
    • 5.4.7 Healthcare Equipment
  • 5.5 By Geography
    • 5.5.1 North America
      • 5.5.1.1 United States
      • 5.5.1.2 Canada
      • 5.5.1.3 Mexico
    • 5.5.2 Europe
      • 5.5.2.1 Germany
      • 5.5.2.2 United Kingdom
      • 5.5.2.3 France
      • 5.5.2.4 Italy
      • 5.5.2.5 Rest of Europe
    • 5.5.3 Asia-Pacific
      • 5.5.3.1 China
      • 5.5.3.2 Japan
      • 5.5.3.3 South Korea
      • 5.5.3.4 Taiwan
      • 5.5.3.5 India
      • 5.5.3.6 Rest of Asia-Pacific
    • 5.5.4 South America
      • 5.5.4.1 Brazil
      • 5.5.4.2 Argentina
      • 5.5.4.3 Rest of South America
    • 5.5.5 Middle East and Africa
      • 5.5.5.1 Middle East
      • 5.5.5.1.1 Saudi Arabia
      • 5.5.5.1.2 United Arab Emirates
      • 5.5.5.1.3 Turkey
      • 5.5.5.1.4 Rest of Middle East
      • 5.5.5.2 Africa
      • 5.5.5.2.1 South Africa
      • 5.5.5.2.2 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves (M&A, JVs, Licensing)
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank/Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Infineon Technologies AG
    • 6.4.2 Mitsubishi Electric Corporation
    • 6.4.3 ON Semiconductor Corporation
    • 6.4.4 STMicroelectronics N.V.
    • 6.4.5 Texas Instruments Inc.
    • 6.4.6 ROHM Co., Ltd.
    • 6.4.7 ABB Ltd.
    • 6.4.8 Toshiba Electronic Devices & Storage Corp.
    • 6.4.9 Vishay Intertechnology Inc.
    • 6.4.10 Renesas Electronics Corp.
    • 6.4.11 Wolfspeed Inc.
    • 6.4.12 Fuji Electric Co., Ltd.
    • 6.4.13 SEMIKRON Danfoss
    • 6.4.14 Littelfuse Inc.
    • 6.4.15 GeneSiC Semiconductor
    • 6.4.16 Navitas Semiconductor Corp.
    • 6.4.17 GaN Systems Inc.
    • 6.4.18 Alpha & Omega Semiconductor
    • 6.4.19 Microchip Technology Inc.
    • 6.4.20 Diodes Incorporated

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-space and Unmet-Need Assessment