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市场调查报告书
商品编码
1940769

二极体：市场占有率分析、产业趋势与统计、成长预测（2026-2031）

Diode - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2026 - 2031)
出版日期: | 出版商: Mordor Intelligence | 英文 161 Pages | 商品交期: 2-3个工作天内

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简介目录

二极体市场预计将从 2025 年的 181.6 亿美元成长到 2026 年的 192.4 亿美元，预计到 2031 年将达到 256.7 亿美元，2026 年至 2031 年的复合年增长率为 5.95%。

二极体市场-IMG1

儘管家用电子电器仍是二极体的最大终端用户，市占率达23.2%，但随着全球电动车专案的加速推进，汽车应用领域正以6.8%的复合年增长率（CAGR）成为成长最快的领域。亚太地区占全球营收的58.86%，年增率达6.63%，主要得益于中国、日本和韩国密集的製造群。表面黏着技术封装占出货量的61.2%，而晶片级封装的年复合成长率也高达7.1%，因为行动电话和物联网製造商对封装尺寸的要求越来越小。

全球二极体市场趋势与洞察

家用电子电器生态系的数位化

智慧型手机、穿戴式装置和连网家庭设备增加了每个系统中半导体的数量，从而推动了对用于讯号调理、电池保护和数据线保护的分立元件的需求。德克萨斯(TI) 的 ESDS31x 系列等小讯号静电放电阵列可提供 ±30kV 的保护，资料传输速率高达 5Gbps，并支援 USB、HDMI 和乙太网路介面。亚太地区的製造商组装了全球约 60% 的电子硬件，这支撑了对用于保护高速互连的二极管阵列的强劲需求。

加速电动车生产和车用充电器的普及

电动动力传动系统的日益普及推动了对汽车半导体的需求。碳化硅和氮化镓二极体可降低牵引逆变器和800V充电器中的开关损耗。安森美半导体的EliteSiC平台已被大众汽车用于其下一代电动车。英飞凌的CoolSiC 1200V MOSFET使DC-DC级能够在900V以上电压下工作而无需额外的隔离，从而在降低系统成本的同时提高了功率密度。

原料价格波动（硅、砷化镓、氮化镓）

中国供应了大部分原生镓原料，而出口限制导致砷化镓（GaAs）和氮化镓（GaN）装置的晶圆成本飙升。全球仅20%的电子废弃物妥善回收，造成关键金属的流失，加剧了供应紧张和价格波动。碳化硅（SiC）晶圆的产量比率仍然不稳定，取决于製造技术的成熟度和基板品质。

细分市场分析

到2025年，雷射二极体将成为最大的二极体市场，规模达64.8亿美元，年复合成长率（CAGR）为8.25%，主要受汽车头灯、雷射雷达感测和高速光纤通讯等应用领域需求成长的推动。整流器和肖特基二极体将继续在功率转换领域占据一席之地，但其成长率将处于个位数中段，低于雷射二极体的普及速度。

工业切割、投影机和3D列印将推动对多模雷射二极体的需求，而医用雷射则需要更严格的波长稳定性，从而推高平均售价。在伺服器电源领域，英飞凌的氮化镓晶体管正与肖特基二极体集成，以减少死区时间损失并提高效率，这为跨领域合作提供了一个良好的范例。

区域分析

亚太地区预计到2025年将占全球收入的58.30%，并在2031年之前保持6.45%的复合年增长率，这主要得益于中国、日本和韩国一体化的供应链。 2023年，中国在全球晶片销售中占据了绝大部分份额，这得益于政府激励措施和国内智慧型手机出口的成长。印尼透过发放98张硅砂开采许可证和提供税收优惠政策，吸引了外国投资者，旨在实现基板生产的在地化。

预计到2030年，北美市场份额将有所增长。 《晶片技术创新法案》（CHIPS Act）的津贴预计将促成5,400亿美元的私人晶圆厂投资，其中包括安森美德克萨斯州）在德州新建的8吋碳化硅（SiC）生产线。加拿大正透过清洁技术税额扣抵来支持氮化镓（GaN）外延晶圆新兴企业，以建立增值流程。墨西哥的电子製造服务（EMS）丛集正在扩大对美国汽车供应链的免税准入，从而促进整流器和突波保护装置的组装。

欧洲的目标是到2030年占据全球20%以上的产量，但审核显示，由于审批延误和技术纯熟劳工短缺，进度面临风险。 Nexperia在汉堡投资2亿美元将扩大欧洲碳化硅（SiC）产能，而波兰将设立英特尔后晶圆厂测试中心，创造2,000个工作机会。中东和非洲地区仍处于欠发达状态，但采用1200V碳化硅二极体的太阳能逆变器试点工厂已在阿联酋运作。

其他福利：

  • Excel格式的市场预测（ME）表
  • 3个月的分析师支持

目录

第一章 引言

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章 市场情势

  • 市场概览
  • 市场驱动因素
    • 家用电子电器生态系的数位化
    • 加速电动车（EV）生产和车载充电器的普及
    • 5G部署推动射频和微波二极体的需求
    • 资料中心效率要求推动了对功​​率二极体的需求
    • 监理政策利好氮化镓硅基高压二极体
    • 由于电子废弃物回收法加强，汇率上涨
  • 市场限制
    • 原料价格波动（硅、砷化镓、氮化镓）
    • 高电流封装中的热限制
    • 宽能带隙半导体製程的专利拥堵
    • 区域生产能力不平衡（由于本地化政策）
  • 供应链分析
  • 监管环境
  • 技术展望
  • 宏观经济因素如何影响市场
  • 波特五力分析
    • 供应商的议价能力
    • 买方的议价能力
    • 新进入者的威胁
    • 替代品的威胁
    • 竞争对手之间的竞争

第五章 市场规模与成长预测

  • 依产品类型
    • 肖特基二极体
    • 齐纳二极体
    • 整流二极体
    • 雷射二极体
    • 小讯号二极体
    • 静电放电保护二极体
    • 瞬态电压抑制二极体
    • 射频和微波二极体
  • 按最终用户行业划分
    • 沟通
    • 家用电子电器
    • 车
    • 国防/航太
    • 电脑及周边设备
    • 产业
    • 照明
    • 其他终端用户产业
  • 透过安装方式 - 封装
    • 通孔
    • 表面黏着技术（SMD）
    • 晶片级封装
    • 覆晶
  • 按地区
    • 北美洲
      • 我们
      • 加拿大
      • 墨西哥
    • 南美洲
      • 巴西
      • 阿根廷
      • 南美洲其他地区
    • 欧洲
      • 德国
      • 英国
      • 法国
      • 俄罗斯
      • 其他欧洲地区
    • 亚太地区
      • 中国
      • 日本
      • 印度
      • 韩国
      • 东南亚
      • 亚太其他地区
    • 中东和非洲
      • 中东
        • 沙乌地阿拉伯
        • 阿拉伯聯合大公国
        • 其他中东地区
      • 非洲
        • 南非
        • 埃及
        • 其他非洲地区

第六章 竞争情势

  • 市场集中度
  • 策略趋势
  • 市占率分析
  • 公司简介
    • Central Semiconductor Corp.
    • Diodes Incorporated
    • MinebeaMitsumi Power Semiconductor Device Inc.
    • Infineon Technologies AG
    • Littelfuse Inc.
    • MACOM Technology Solutions Holdings Inc.
    • Nexperia BV
    • onsemi
    • Renesas Electronics Corp.
    • ROHM Co. Ltd.
    • Micross Components Inc.
    • Vishay Intertechnology Inc.
    • Toshiba Electronic Devices and Storage Corp.
    • Mitsubishi Electric Corp.
    • Microchip Technology Inc.
    • Semikron Danfoss
    • Shindengen Electric Manufacturing Co. Ltd.
    • STMicroelectronics NV
    • Panasonic Holdings Corp.
    • Texas Instruments Inc.
    • Kyocera AVX Components Corp.
    • Skyworks Solutions Inc.
    • Cree-Wolfspeed Inc.
    • Alpha and Omega Semiconductor Ltd.
    • GlobalFoundries Inc.

第七章 市场机会与未来展望

简介目录
Product Code: 90879

The diode market is expected to grow from USD 18.16 billion in 2025 to USD 19.24 billion in 2026 and is forecast to reach USD 25.67 billion by 2031 at 5.95% CAGR over 2026-2031.

Diode - Market - IMG1

Consumer electronics remains the largest end-user at 23.2% diode market share, while automotive applications show the strongest 6.8% CAGR as electric-vehicle programs accelerate worldwide. Asia-Pacific holds 58.86% of global revenue and grows at a 6.63% pace thanks to dense manufacturing clusters in China, Japan, and South Korea. Surface-mount packaging captures 61.2% of shipments, yet chip-scale packages rise at a 7.1% CAGR because handset and IoT producers need ever-smaller footprints.

Global Diode Market Trends and Insights

Digitization of Consumer Electronics Ecosystems

Smartphones, wearables, and connected-home devices embed higher semiconductor content per system, lifting discrete component volumes for signal conditioning, battery protection, and data-line safeguarding. Small-signal and electrostatic-discharge arrays such as the ESDS31x series from Texas Instruments deliver +-30 kV protection at up to 5 Gbps data rates, supporting USB, HDMI, and Ethernet interfaces.Asia-Pacific manufacturers assemble about 60% of global electronics hardware, feeding clustered demand for diode arrays that secure high-speed interconnects.

Acceleration of EV Production and On-Board Chargers

Automotive semiconductor demand is increasing as electric-powertrain penetration climbs. Silicon-carbide and gallium-nitride diodes deliver lower switching losses for traction inverters and 800 V chargers; onsemi's EliteSiC platform has been adopted by Volkswagen for next-generation EVs.Infineon's CoolSiC 1200 V MOSFETs allow DC-DC stages to operate beyond 900 V without extra insulation, raising power density while trimming system cost.

Raw-Material Price Volatility (Si, GaAs, GaN)

China provides most primary gallium feedstock, and any export curbs rapidly elevate wafer costs for GaAs and GaN devices. Only 20% of global e-waste is properly recycled, causing critical-metal losses that tighten supply and raise pricing swings. SiC wafer yields remain volatile, contingent on manufacturing maturity and substrate quality.

Other drivers and restraints analyzed in the detailed report include:

  1. 5G Rollout Boosting RF and Microwave Diodes
  2. Data-Center Efficiency Mandates Raising Power-Diode Demand
  3. Thermal Limitations in High-Current Packages

For complete list of drivers and restraints, kindly check the Table Of Contents.

Segment Analysis

Laser diodes generated the largest diode market size at USD 6.48 billion in 2025 and are positioned for an 8.25% CAGR, propelled by automotive front-lighting, LiDAR sensing, and high-speed fiber communications. Rectifier and Schottky devices continue to secure power-conversion sockets, though their mid-single-digit growth trails laser adoption.

Industrial cutting, projectors, and 3D printing sustain multimode laser-diode volumes, while medical-grade lasers require tighter wavelength stability that lifts average selling prices. In server power supplies, Infineon's GaN transistors integrate a Schottky diode that curbs dead-time losses and elevates efficiency, showcasing cross-category partnerships.

The Diode Market Report is Segmented by Product Type (Schottky Diodes, Zener Diodes, and More), End-User Industry (Communications, Consumer Electronics, Automotive, Defense and Aerospace, Computer and Peripherals, and More), Mounting-Package (Through-Hole, Surface-Mount, and More), and Geography (North America, South America, Europe, Asia-Pacific, Middle East and Africa). The Market Forecasts are Provided in Terms of Value (USD).

Geography Analysis

Asia-Pacific held 58.30% of global revenue in 2025, and continues at a 6.45% CAGR through 2031 on the back of integrated supply chains in China, Japan, and South Korea. China absorbed a significant share of world chip sales in 2023, buoyed by government incentives and domestic smartphone exports. Indonesia courts foreign investors with 98 silica-sand mining licenses and tax holidays, aiming to localize substrate production.

North America's share is set to rise by 2030 as the CHIPS Act grants unlock USD 540 billion of private fab commitments, including onsemi's new 8-inch SiC line in Texas. Canada supports GaN epi-wafer startups through Clean-Tech credits, seeking to anchor value-add processes. Mexico's EMS clusters extend tariff-free access to the U.S. vehicle supply chain, stimulating rectifier and transient-voltage-suppressor assembly.

Europe targets more than 20% global production share by 2030, though audit findings warn of schedule risk given permitting delays and skilled-labor gaps. Nexperia's USD 200 million Hamburg investment broadens European SiC capacity, while Poland secures Intel's post-fab testing center that creates 2,000 roles. The Middle East and Africa remain nascent but see pilot solar-inverter fabs in the UAE that specify 1200 V SiC diodes.

  1. Central Semiconductor Corp.
  2. Diodes Incorporated
  3. MinebeaMitsumi Power Semiconductor Device Inc.
  4. Infineon Technologies AG
  5. Littelfuse Inc.
  6. MACOM Technology Solutions Holdings Inc.
  7. Nexperia BV
  8. onsemi
  9. Renesas Electronics Corp.
  10. ROHM Co. Ltd.
  11. Micross Components Inc.
  12. Vishay Intertechnology Inc.
  13. Toshiba Electronic Devices and Storage Corp.
  14. Mitsubishi Electric Corp.
  15. Microchip Technology Inc.
  16. Semikron Danfoss
  17. Shindengen Electric Manufacturing Co. Ltd.
  18. STMicroelectronics NV
  19. Panasonic Holdings Corp.
  20. Texas Instruments Inc.
  21. Kyocera AVX Components Corp.
  22. Skyworks Solutions Inc.
  23. Cree - Wolfspeed Inc.
  24. Alpha and Omega Semiconductor Ltd.
  25. GlobalFoundries Inc.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET LANDSCAPE

  • 4.1 Market Overview
  • 4.2 Market Drivers
    • 4.2.1 Digitization of consumer electronics ecosystems
    • 4.2.2 Acceleration of EV production and on-board chargers
    • 4.2.3 5G rollout driving demand for RF and microwave diodes
    • 4.2.4 Data-center efficiency mandates boosting power diodes
    • 4.2.5 Regulatory tailwinds for GaN-on-Si high-voltage diodes
    • 4.2.6 E-waste recycling laws increasing replacement rates
  • 4.3 Market Restraints
    • 4.3.1 Raw-material price volatility (Si, GaAs, GaN)
    • 4.3.2 Thermal limitations in high-current packages
    • 4.3.3 Patent congestion in WBG semiconductor processes
    • 4.3.4 Regional capacity imbalance from localization policies
  • 4.4 Supply-Chain Analysis
  • 4.5 Regulatory Landscape
  • 4.6 Technological Outlook
  • 4.7 Impact of Macroeconomic Factors on the Market
  • 4.8 Porter's Five Forces Analysis
    • 4.8.1 Bargaining Power of Suppliers
    • 4.8.2 Bargaining Power of Buyers
    • 4.8.3 Threat of New Entrants
    • 4.8.4 Threat of Substitutes
    • 4.8.5 Intensity of Competitive Rivalry

5 MARKET SIZE AND GROWTH FORECASTS (VALUE)

  • 5.1 By Product Type
    • 5.1.1 Schottky Diodes
    • 5.1.2 Zener Diodes
    • 5.1.3 Rectifier Diodes
    • 5.1.4 Laser Diodes
    • 5.1.5 Small-Signal Diodes
    • 5.1.6 Electrostatic Discharge Protection Diodes
    • 5.1.7 Transient Voltage Suppressor Diodes
    • 5.1.8 RF and Microwave Diodes
  • 5.2 By End-User Industry
    • 5.2.1 Communications
    • 5.2.2 Consumer Electronics
    • 5.2.3 Automotive
    • 5.2.4 Defense and Aerospace
    • 5.2.5 Computer and Peripherals
    • 5.2.6 Industrial
    • 5.2.7 Lighting
    • 5.2.8 Other End-User Industries
  • 5.3 By Mounting - Package
    • 5.3.1 Through-Hole
    • 5.3.2 Surface-Mount (SMD)
    • 5.3.3 Chip-Scale Package
    • 5.3.4 Flip-Chip
  • 5.4 By Geography
    • 5.4.1 North America
      • 5.4.1.1 United States
      • 5.4.1.2 Canada
      • 5.4.1.3 Mexico
    • 5.4.2 South America
      • 5.4.2.1 Brazil
      • 5.4.2.2 Argentina
      • 5.4.2.3 Rest of South America
    • 5.4.3 Europe
      • 5.4.3.1 Germany
      • 5.4.3.2 United Kingdom
      • 5.4.3.3 France
      • 5.4.3.4 Russia
      • 5.4.3.5 Rest of Europe
    • 5.4.4 Asia-Pacific
      • 5.4.4.1 China
      • 5.4.4.2 Japan
      • 5.4.4.3 India
      • 5.4.4.4 South Korea
      • 5.4.4.5 South-East Asia
      • 5.4.4.6 Rest of Asia-Pacific
    • 5.4.5 Middle East and Africa
      • 5.4.5.1 Middle East
        • 5.4.5.1.1 Saudi Arabia
        • 5.4.5.1.2 United Arab Emirates
        • 5.4.5.1.3 Rest of Middle East
      • 5.4.5.2 Africa
        • 5.4.5.2.1 South Africa
        • 5.4.5.2.2 Egypt
        • 5.4.5.2.3 Rest of Africa

6 COMPETITIVE LANDSCAPE

  • 6.1 Market Concentration
  • 6.2 Strategic Moves
  • 6.3 Market Share Analysis
  • 6.4 Company Profiles (includes Global level Overview, Market level overview, Core Segments, Financials as available, Strategic Information, Market Rank - Share for key companies, Products and Services, and Recent Developments)
    • 6.4.1 Central Semiconductor Corp.
    • 6.4.2 Diodes Incorporated
    • 6.4.3 MinebeaMitsumi Power Semiconductor Device Inc.
    • 6.4.4 Infineon Technologies AG
    • 6.4.5 Littelfuse Inc.
    • 6.4.6 MACOM Technology Solutions Holdings Inc.
    • 6.4.7 Nexperia BV
    • 6.4.8 onsemi
    • 6.4.9 Renesas Electronics Corp.
    • 6.4.10 ROHM Co. Ltd.
    • 6.4.11 Micross Components Inc.
    • 6.4.12 Vishay Intertechnology Inc.
    • 6.4.13 Toshiba Electronic Devices and Storage Corp.
    • 6.4.14 Mitsubishi Electric Corp.
    • 6.4.15 Microchip Technology Inc.
    • 6.4.16 Semikron Danfoss
    • 6.4.17 Shindengen Electric Manufacturing Co. Ltd.
    • 6.4.18 STMicroelectronics NV
    • 6.4.19 Panasonic Holdings Corp.
    • 6.4.20 Texas Instruments Inc.
    • 6.4.21 Kyocera AVX Components Corp.
    • 6.4.22 Skyworks Solutions Inc.
    • 6.4.23 Cree - Wolfspeed Inc.
    • 6.4.24 Alpha and Omega Semiconductor Ltd.
    • 6.4.25 GlobalFoundries Inc.

7 MARKET OPPORTUNITIES AND FUTURE OUTLOOK

  • 7.1 White-Space and Unmet-Need Assessment