![]() |
市场调查报告书
商品编码
1872064
SiC MOSFET晶片(元件)和模组:2025-2031年全球市场份额和排名、总收入和需求预测SiC MOSFET Chips (Devices) and Module - Global Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031 |
||||||
※ 本网页内容可能与最新版本有所差异。详细情况请与我们联繫。
2024 年全球 SiC MOSFET 晶片(元件)和模组的市场规模估计为 10.54 亿美元,预计在预测期(2025-2031 年)内将以 26.6% 的复合年增长率增长,到 2031 年达到 61.53 亿美元。
本报告对近期碳化硅MOSFET晶片(元件)和模组的关税调整和国际战略反制措施进行了全面评估,包括其对跨境产业布局、资本配置模式、区域经济相互依存关係和供应链重组的影响。
碳化硅金属氧化物场效电晶体(SiC MOSFET)晶片是一种采用碳化硅(SiC)材料製造的新型功率半导体晶片。与传统的硅(Si)材料相比,SiC具有更宽的带隙(带隙宽度约为3.26 eV,而硅的带隙宽度约为1.12 eV),这使得SiC MOSFET晶片具有一系列优异的性能特性。
SiC MOSFET元件是完整的半导体元件,其核心是SiC MOSFET晶片,并包含必要的封装材料和引脚。封装对于SiC MOSFET元件至关重要,它不仅能为晶片提供物理保护(防止机械损伤和潮湿腐蚀),还能实现晶片与外部电路之间的电气连接。 SiC MOSFET元件的常用封装形式包括TO-247和TO-220。例如,TO-247封装具有出色的散热性能,能够快速散发晶片工作过程中产生的热量,即使在高温环境下也能确保装置稳定运作。
SiC MOSFET模组透过特定的电路拓扑结构,将多个SiC MOSFET元件和二极体等辅助元件整合到单一功率模组中。这种整合设计具有诸多优势。首先,模组内元件间优化的电路连接实现了高功率密度。例如,在新能源汽车(NEV)的主驱动逆变器中使用SiC MOSFET模组,可在有限的空间内实现更高的输出功率,有助于打造更紧凑、更轻的车辆设计。其次,模组的内部布局和连接经过精心设计,有效降低了漏感,并提高了系统的稳定性和可靠性。漏感会在开关过程中产生电压尖峰,可能会影响装置的正常运作。而SiC MOSFET模组透过精简的布局和布线设计,有效缓解了这种影响。
新能源汽车产业的爆发式成长:新能源汽车市场的快速发展是推动SiC MOSFET晶片、装置和模组市场成长的主要因素。随着全球对排放减排和环境保护的日益重视,新能源汽车已成为汽车产业发展的主流趋势。特别是800V高压平台的广泛应用,对功率元件提出了更高的性能要求。 SiC MOSFET具有低导通电阻、高开关频率和高耐压等优势,是800V高压平台主驱动逆变器的理想选择。采用SiC MOSFET模组的主驱动逆变器可将新能源车的续航里程延长5-10%,并将充电时间缩短至15-20分钟,大幅提升使用者体验。例如,特斯拉率先在其Model 3和Model Y车型中采用SiC MOSFET模组。随后,众多汽车製造商纷纷效仿,推动了整个新能源汽车产业对SiC MOSFET需求的快速成长。
太阳能发电和储能产业的快速发展:在太阳能发电领域,全球对可再生能源的需求持续成长,推动了太阳能发电装置容量的持续成长。在太阳能逆变器中应用碳化硅(SiC)MOSFET可显着提高逆变器的转换效率并降低能量损耗。传统的硅基IGBT逆变器的转换效率通常在96%至98%之间,而采用SiC MOSFET的逆变器效率可超过99%,在相同的光照条件下产生更多功率。此外,SiC MOSFET的高频特性使得逆变器中可以使用更小更轻的被动元件,例如感应器和电容器,从而降低系统成本。在储能领域,随着储能市场的扩张,SiC MOSFET越来越多地应用于储能转换器(PCS)。这些应用提高了能源储存系统的充放电效率,延长了电池寿命,并增强了系统的稳定性和可靠性。例如,在大规模储能电厂计划中,使用SiC MOSFET模组的储能转换器可实现98%以上的充放电效率,显着提高能源储存系统的经济效益。
工业领域的节能与电力系统升级:包括马达驱动装置和电力转换设备在内的各种工业设备迫切需要节能降耗。 SiC MOSFET的应用能够显着降低能耗,并提高生产效率。例如,在工业马达驱动系统中以SiC MOSFET取代传统的硅基元件,可使系统效率提高3-5%,从而实现可观的年度节能。在电力系统领域,随着智慧电网建设的推进,对电力电子装置的性能和可靠性要求不断提高。 SiC MOSFET有望在高压直流输电(HVDC)和柔性交流输电(FACTS)系统等领域中广泛应用,以满足电力系统不断变化的需求,例如提高输电效率、增强系统稳定性和可控性、实现更高电压、更大容量以及建立更智慧的系统。
本报告旨在按地区/国家、类型和应用对全球 SiC MOSFET 晶片(装置)和模组市场进行全面分析,重点关注总销售量、收入、价格、市场份额以及主要企业的排名。
本报告以2024年为基准年,按销量(千件)和收入(百万美元)对SiC MOSFET晶片(装置)和模组的市场规模、估算和预测进行了呈现,并包含了2020年至2031年的历史数据和预测数据。透过定量和定性分析,我们帮助读者制定SiC MOSFET晶片(装置)和模组的业务/成长策略,评估市场竞争,分析自身在当前市场中的地位,并做出明智的商业决策。
市场区隔
公司
按类型分類的细分市场
应用领域
按地区
The global market for SiC MOSFET Chips (Devices) and Module was estimated to be worth US$ 1054 million in 2024 and is forecast to a readjusted size of US$ 6153 million by 2031 with a CAGR of 26.6% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC MOSFET Chips (Devices) and Module cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle's miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%-10% while reducing charging time to 15-20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%-98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%-5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report aims to provide a comprehensive presentation of the global market for SiC MOSFET Chips (Devices) and Module, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC MOSFET Chips (Devices) and Module by region & country, by Type, and by Application.
The SiC MOSFET Chips (Devices) and Module market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC MOSFET Chips (Devices) and Module.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC MOSFET Chips (Devices) and Module manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC MOSFET Chips (Devices) and Module in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC MOSFET Chips (Devices) and Module in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.