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碳化硅（SiC）功率元件市场规模、份额和成长分析（按类型、电压范围、应用和地区划分）－2026-2033年产业预测

市场调查报告书

商品编码

1899151

碳化硅（SiC）功率元件市场规模、份额和成长分析（按类型、电压范围、应用和地区划分）－2026-2033年产业预测

Silicon Carbide (SiC) Power Devices Market Size, Share, and Growth Analysis, By Type (SiC Discrete Devices, SiC Power Modules), By Voltage Range (Low Voltage, Medium Voltage), By Application, By Region - Industry Forecast 2026-2033

出版日期: 2025年12月25日 | 出版商:

SkyQuest | 英文 182 Pages | 商品交期: 3-5个工作天内

价格

简介目录

预计到 2024 年，碳化硅 (SiC) 功率装置市场规模将达到 15.3 亿美元，到 2025 年将成长至 18.9 亿美元，到 2033 年将成长至 103.8 亿美元，在预测期（2026-2033 年）内复合年增长率为 27%。

受节能解决方案需求成长、电动车普及以及再生能源来源併网等因素的推动，碳化硅 (SiC) 功率元件市场正经历显着扩张。与传统的硅基元件相比，SiC 元件具有更低的导通损耗和开关损耗，并且能够在高频率和温度下工作，因此具有更高的能源效率。在汽车领域，SiC 装置能够有效应对高压高温环境，提高功率转换效率并延长续航里程，从而满足电动车的需求。 SiC 技术具有许多优势，例如更高的击穿电压、更快的开关速度和优异的导热性，这些优势转化为更高的功率密度和更小的系统尺寸。此外，製造技术的进步正在降低生产成本，从而促进其在各行业的广泛应用。

碳化硅（SiC）功率元件市场驱动因素

推动碳化硅 (SiC) 功率元件市场扩张的关键因素之一是对节能型功率电子产品日益增长的需求。与传统的硅元件相比，SiC 功率元件具有显着优势，包括更高的效率、更快的开关速度以及在高温环境下工作的能力。汽车、航太和工业应用等各领域对节能解决方案的蓬勃发展，正在加速 SiC 功率元件的普及应用。此外，旨在减少二氧化碳排放和推广可再生能源利用的各项措施也进一步推动了 SiC 功率元件市场的成长。

碳化硅（SiC）功率元件市场面临的限制因素

全球碳化硅 (SiC) 功率元件市场面临的主要挑战之一是其高成本高于传统硅元件。高昂的价格主要源自于碳化硅材料製造流程的复杂性以及碳化硅晶圆供应商的短缺。因此，碳化硅功率元件的应用往往局限于对效率和高速开关能力要求极高的高阶应用领域。儘管高成本可能会在短期内阻碍市场扩张，但随着市场的发展和成熟，价格有望逐步下降。

碳化硅（SiC）功率元件市场趋势

全球碳化硅 (SiC) 功率元件市场呈现显着成长趋势，这主要得益于碳化硅技术在各个工业领域，特别是电动车 (EV) 应用领域的日益普及。由于其卓越的性能，例如更高的效率、更强的导热性和更快的开关速度，碳化硅功率装置正逐渐成为替代传统硅元件的理想选择。这项转变源自于电动车和可再生能源系统对高性能功率电子装置日益增长的需求，而这些需求需要尖端材料来实现最佳化的能源管理。随着各行业不断优先考虑永续性和性能，预计碳化硅功率装置市场将实现显着成长。

北美洲
- 美国
- 加拿大
欧洲
- 德国
- 西班牙
- 法国
- 英国
- 义大利
- 其他欧洲地区
亚太地区
- 中国
- 印度
- 日本
- 韩国
- 亚太其他地区
拉丁美洲
- 巴西
- 其他拉丁美洲地区
中东和非洲
- 海湾合作委员会国家
- 南非
- 其他中东和非洲地区

竞争资讯

前五大公司对比
主要企业的市场定位（2025 年）
主要市场参与者所采取的策略
近期市场趋势
公司市占率分析（2025 年）
主要企业公司简介
- 公司详情
- 产品系列分析
- 依业务板块进行公司股票分析
- 2023-2025年营收年比比较

主要企业简介

STMicroelectronics NV（Switzerland）
Infineon Technologies AG（Germany）
Wolfspeed, Inc.（USA）
ROHM Co., Ltd.（Japan）
ON Semiconductor Corporation（USA）
Mitsubishi Electric Corporation（Japan）
Fuji Electric Co., Ltd.（Japan）
Littelfuse, Inc.（USA）
Microchip Technology Inc.（USA）
Texas Instruments Incorporated（USA）
Toshiba Corporation（Japan）
Renesas Electronics Corporation（Japan）
ABB Ltd.（Switzerland）
Analog Devices, Inc.（USA）
Semikron（Germany）
Coherent Corp.（USA）
GeneSiC Semiconductor Inc.（USA）
Power Integrations, Inc.（USA）

结论与建议

简介目录

Product Code: SQMIG55A2014

Silicon Carbide (SiC) Power Devices Market size was valued at USD 1.53 Billion in 2024 and is poised to grow from USD 1.89 Billion in 2025 to USD 10.38 Billion by 2033, growing at a CAGR of 23.7% during the forecast period (2026-2033).

The Silicon Carbide (SiC) Power Devices market is experiencing significant expansion driven by a rising need for energy-efficient solutions, the increasing uptake of electric vehicles, and the integration of renewable energy sources. These devices outperform conventional silicon-based alternatives with lower conduction and switching losses, enabling operation at elevated frequencies and temperatures, resulting in enhanced energy efficiency. Particularly in the automotive sector, SiC devices cater to electric vehicle demands by effectively managing higher voltages and temperatures, thereby enhancing power conversion efficiency and extending driving ranges. The benefits of SiC technology, such as superior breakdown voltage, faster switching speeds, and improved thermal conductivity, lead to greater power density and reduced system sizes. Additionally, advancements in manufacturing techniques are decreasing production costs, fostering broader industry adoption.

Top-down and bottom-up approaches were used to estimate and validate the size of the Silicon Carbide (SiC) Power Devices market and to estimate the size of various other dependent submarkets. The research methodology used to estimate the market size includes the following details: The key players in the market were identified through secondary research, and their market shares in the respective regions were determined through primary and secondary research. This entire procedure includes the study of the annual and financial reports of the top market players and extensive interviews for key insights from industry leaders such as CEOs, VPs, directors, and marketing executives. All percentage shares split, and breakdowns were determined using secondary sources and verified through Primary sources. All possible parameters that affect the markets covered in this research study have been accounted for, viewed in extensive detail, verified through primary research, and analyzed to get the final quantitative and qualitative data.

Silicon Carbide (SiC) Power Devices Market Segments Analysis

Global Silicon Carbide (SiC) Power Devices Market is segmented by Type, Voltage Range, Application and region. Based on Type, the market is segmented into SiC Discrete Devices and SiC Power Modules. Based on Voltage Range, the market is segmented into Low Voltage, Medium Voltage and High Voltage. Based on Application, the market is segmented into Automotive, Industrial, Consumer Electronics, Telecommunications, Energy and Power, Aerospace and Defense and Medical Devices. Based on region, the market is segmented into North America, Europe, Asia Pacific, Latin America and Middle East & Africa.

Driver of the Silicon Carbide (SiC) Power Devices Market

A significant factor propelling the expansion of the Silicon Carbide (SiC) Power Devices market is the rising need for energy-efficient power electronics. SiC power devices provide distinct advantages over conventional silicon counterparts, such as enhanced efficiency, quicker switching capabilities, and the ability to operate at elevated temperatures. This burgeoning demand for energy-efficient solutions across diverse sectors, including automotive, aerospace, and industrial applications, is accelerating the acceptance of SiC power devices. Additionally, initiatives aimed at lowering carbon emissions and encouraging renewable energy utilization are further stimulating the growth of the SiC power devices market.

Restraints in the Silicon Carbide (SiC) Power Devices Market

A significant challenge facing the global Silicon Carbide (SiC) Power Devices market is the elevated costs associated with these devices when compared to traditional silicon alternatives. This premium pricing primarily stems from the intricate manufacturing processes required for SiC materials and the scarcity of suppliers producing SiC wafers. Consequently, the uptake of SiC power devices tends to be restricted to high-end applications that demand exceptional efficiency and rapid switching capabilities. While this high cost is likely to hinder market expansion in the immediate future, there are expectations that prices will gradually decrease as the market evolves and matures.

Market Trends of the Silicon Carbide (SiC) Power Devices Market

The global Silicon Carbide (SiC) Power Devices market is experiencing a notable trend characterized by the rising integration of SiC technology across various industries, particularly in electric vehicle (EV) applications. With superior attributes such as enhanced efficiency, elevated thermal conductivity, and faster switching capabilities, SiC power devices are emerging as the preferred solution over conventional silicon counterparts. This shift is driven by the increasing demand for high-performance power electronics in EVs and renewable energy systems, which require advanced materials to optimize energy management. As industries continue to prioritize sustainability and performance, the SiC power devices market is poised for significant expansion.

Introduction

Objectives of the Study
Scope of the Report
Definitions

Research Methodology

Information Procurement
Secondary & Primary Data Methods
Market Size Estimation
Market Assumptions & Limitations

Executive Summary

Global Market Outlook
Supply & Demand Trend Analysis
Segmental Opportunity Analysis

Market Dynamics & Outlook

Market Overview
Market Size
Market Dynamics
- Drivers & Opportunities
- Restraints & Challenges
Porters Analysis
- Competitive rivalry
- Threat of substitute
- Bargaining power of buyers
- Threat of new entrants
- Bargaining power of suppliers

Key Market Insights

Key Success Factors
Degree of Competition
Top Investment Pockets
Market Ecosystem
Market Attractiveness Index, 2025
PESTEL Analysis
Macro-Economic Indicators
Value Chain Analysis
Pricing Analysis
Case Studies
Technology Advancement
Regulatory Landscape
Patent Analysis

Global Silicon Carbide (SiC) Power Devices Market Size by Type & CAGR (2026-2033)

Market Overview
SiC Discrete Devices
SiC Power Modules

Global Silicon Carbide (SiC) Power Devices Market Size by Voltage Range & CAGR (2026-2033)

Market Overview
Low Voltage
Medium Voltage
High Voltage

Global Silicon Carbide (SiC) Power Devices Market Size by Application & CAGR (2026-2033)

Market Overview
Automotive
Industrial
Consumer Electronics
Telecommunications
Energy and Power
Aerospace and Defense
Medical Devices

Global Silicon Carbide (SiC) Power Devices Market Size & CAGR (2026-2033)

North America (Type, Voltage Range, Application)
- US
- Canada
Europe (Type, Voltage Range, Application)
- Germany
- Spain
- France
- UK
- Italy
- Rest of Europe
Asia Pacific (Type, Voltage Range, Application)
- China
- India
- Japan
- South Korea
- Rest of Asia-Pacific
Latin America (Type, Voltage Range, Application)
- Brazil
- Rest of Latin America
Middle East & Africa (Type, Voltage Range, Application)
- GCC Countries
- South Africa
- Rest of Middle East & Africa

Competitive Intelligence

Top 5 Player Comparison
Market Positioning of Key Players, 2025
Strategies Adopted by Key Market Players
Recent Developments in the Market
Company Market Share Analysis, 2025
Company Profiles of All Key Players
- Company Details
- Product Portfolio Analysis
- Company's Segmental Share Analysis
- Revenue Y-O-Y Comparison (2023-2025)

Key Company Profiles

STMicroelectronics N.V. (Switzerland)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Infineon Technologies AG (Germany)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Wolfspeed, Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
ROHM Co., Ltd. (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
ON Semiconductor Corporation (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Mitsubishi Electric Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Fuji Electric Co., Ltd. (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Littelfuse, Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Microchip Technology Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Texas Instruments Incorporated (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Toshiba Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Renesas Electronics Corporation (Japan)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
ABB Ltd. (Switzerland)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Analog Devices, Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Semikron (Germany)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Coherent Corp. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
GeneSiC Semiconductor Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments
Power Integrations, Inc. (USA)
- Company Overview
- Business Segment Overview
- Financial Updates
- Key Developments