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市场调查报告书
商品编码
1625296
2030 年 3D NAND快闪记忆体快闪记忆体市场预测:按类型、外形规格、记忆体密度、应用、最终用户和地区进行的全球分析3D Nand Flash Memory Market Forecasts to 2030 - Global Analysis By Type (Single-Level Cell, Multi-Level Cell, Triple-Level Cell and Quad-Level Cell), Form Factor, Memory Density, Application, End User and By Geography |
根据Stratistics MRC预测,2024年全球3D NAND快闪记忆体市场规模将达222亿美元,预计2030年将达到570亿美元,预测期内复合年增长率为17%。
3D NAND快闪记忆体是一种非挥发性储存技术,可将资料储存在 3D 储存单元阵列中,与传统 2D NAND 相比,可提供更高的储存密度和改进的效能。此技术将储存单元垂直堆迭成多层,并在不增加表面积的情况下增加储存容量。广泛应用于固态硬碟、记忆卡、智慧型手机和资料中心等应用。与传统 NAND 技术相比,3D NAND 具有更快的资料存取速度、更低的功耗和更高的耐用性。
根据爱立信移动报告,预计到2024年终5G合约将占北美移动合约的55%。
对储存容量的需求不断增长
3D NAND快闪记忆体快闪记忆体为传统 2D NAND 技术的物理限制提供了解决方案,该技术受到硅晶圆上水平空间的限制。透过垂直堆迭储存单元,3D NAND 增加了给定区域中的资料储存容量。随着对 SSD、智慧型手机和笔记型电脑等大容量设备的需求不断增长,3D NAND 为製造商提供了生产更高容量储存解决方案的可行解决方案,从而推动市场成长。
可靠性和耐用性问题
3D NAND快闪记忆体的寿命是有限的,以程式设计/擦除週期来衡量。儘管与 2D NAND 相比,耐用性有所提高,但由于储存单元堆迭的增加,单元会随着时间的推移而继续劣化。对于高效能伺服器、资料中心和汽车系统等资料可靠性和耐用性至关重要的应用来说,寿命缩短是一个问题。此外,过早磨损可能导致资料损坏或遗失,从而降低该技术在这些领域的吸引力并阻碍市场发展。
从传统硬碟 (HDD) 转向固态硬碟 (SSD) 的转变增多
由于 3D NAND 技术,SSD 提供比 HDD 更快的读取/写入速度。该技术透过减少延迟并在更小的区域储存更多资料来提高资料传输速度。 3D NAND 对于高效能 SSD 至关重要,因为游戏、影像製作、人工智慧和巨量资料分析等应用需要更快的储存速度。 SSD 没有活动部件,因此不易受到物理损坏且更耐用。随着企业和消费者优先考虑可靠性,SSD 变得越来越受欢迎,从而增加了对基于 3D NAND 的储存解决方案的需求。
与替代技术的竞争
3D XPoint 是一种由英特尔和美光开发的非挥发性记忆体技术,是 3D NAND 的潜在替代品,可提供更高的效能、更低的延迟和更高的耐用性。预计它将成为高效能储存应用领域3D NAND的有力竞争对手。儘管仍处于采用的早期阶段,3D XPoint 的速度和耐用性优势使其成为资料中心和企业市场的强大竞争对手。一旦具有成本效益并被广泛采用,3D XPoint 可以减少对 3D NAND 的需求。
COVID-19 的影响
COVID-19的疫情对3D NAND快闪记忆体市场产生了重大影响。供应链中断,包括半导体短缺和工厂关闭,导致生产延误和成本增加。然而,远距工作、电子商务和数位服务的激增推动了资料储存需求的增加,使市场受益。云端运算、游戏和人工智慧应用的扩展也推动了由 3D NAND 驱动的 SSD 的成长。
通用快闪记忆体储存领域预计将在预测期内成为最大的领域
由于对高效能记忆体解决方案的需求,预计通用快闪记忆体储存领域将在预测期内获得最大的市场占有率。最新版本Universal Flash Storage 2.1和Universal Flash Storage 3.1采用先进的NAND快闪记忆体技术(如3D NAND)以实现更快的读写速度。智慧型手机、平板电脑和笔记型电脑中越来越多地采用通用快闪记忆体储存3.1,推动了对高速NAND 记忆体的需求,特别是满足通用快闪储存效能标准的3D NAND,从而增强了消费性电子产品中的3D NAND市场。
资料中心和云端服务产业预计在预测期内复合年增长率最高
由于配备 3D NAND 的固态硬碟等先进储存技术可实现快速资料搜寻、即时处理和高速资料传输,预计资料中心和云端服务将在预测期内实现良好成长。与 HDD 等传统储存解决方案相比,3D NAND 提供更快的读取/写入速度、更低的延迟和更强的耐用性,使其成为云端储存和高效能运算应用的理想选择,这正在加速 3D NAND快闪记忆体市场的成长。
北美尤其是美国是储存技术创新中心,由英特尔、美光科技、西部数据等主要半导体厂商主导3D NAND快闪记忆体市场发展。这种创新领导力加速了 3D NAND快闪记忆体快闪记忆体的开发和采用,透过多级单元 (MLC)、三级单元 (TLC) 和四级单元 (QLC) 3D NAND 记忆体等开创性创新引领世界. 我们正在推动市场增长。
这是因为亚太地区的数位转型正在推动对强大资料储存解决方案的需求,特别是在云端运算、巨量资料分析和基于人工智慧的应用程式方面。 3D NAND 等高效能储存解决方案因其速度、可靠性和耐用性而非常适合这些服务。由于亚太地区云端服务和资料中心的扩张,对 3D NAND 的需求不断增加,推动了市场成长。
According to Stratistics MRC, the Global 3D Nand Flash Memory Market is accounted for $22.2 billion in 2024 and is expected to reach $57.0 billion by 2030 growing at a CAGR of 17% during the forecast period. 3D NAND Flash Memory is a non-volatile storage technology that stores data in a 3D array of memory cells, resulting in higher storage density and improved performance compared to traditional 2D NAND. This technology stacks memory cells vertically in multiple layers, increasing storage capacity without requiring more surface area. It is widely used in applications like solid-state drives, memory cards, smartphones, and data centers. 3D NAND offers faster data access speeds, lower power consumption, and higher durability compared to older NAND technologies.
According to the Ericsson Mobility report, in the North American region, 5G subscriptions are expected to account for 55% of mobile subscriptions by the end of 2024.
Increasing demand for storage capacity
3D NAND flash memory offers a solution to the physical limitations of traditional 2D NAND technology, which has limitations due to horizontal space constraints on silicon wafers. By stacking memory cells vertically, 3D NAND increases the storage capacity of data in a given area. As demand for high-capacity devices like SSDs, smartphones, and laptops increases, 3D NAND provides a viable solution for manufacturers to produce storage solutions with higher capacities boosting the market growth.
Reliability and durability concerns
3D NAND flash memory has a finite lifespan, measured in Program/Erase cycles. Despite its improved endurance over 2D NAND, the cells continue to degrade over time due to increased stacking of memory cells. This reduced lifespan is a concern for applications like high-performance servers, data centers, and automotive systems, where data reliability and endurance are crucial. Moreover premature wear can lead to data corruption or loss, undermining the technology's appeal in these sectors hampers the market.
Increasing shift from traditional hard disk drives (HDDs) to solid-state drives (SSDs)
SSDs offer faster read/write speeds compared to HDDs, thanks to 3D NAND technology. This technology reduces latency and stores more data in a smaller area, enhancing data transfer speeds. As applications like gaming, video production, AI, and big data analytics demand faster storage, 3D NAND is crucial for high-performance SSDs. SSDs also offer superior durability due to their lack of moving parts, making them less susceptible to physical damage. As businesses and consumers prioritize reliability, SSDs are increasingly preferred, boosting demand for 3D NAND-based storage solutions.
Competition from alternative technologies
3D XPoint, a non-volatile memory technology developed by Intel and Micron, is a potential alternative to 3D NAND, offering higher performance, lower latency, and greater endurance. It is seen as a strong competitor to 3D NAND in high-performance storage applications. Although still in its early stages of adoption, 3D XPoint's advantages in speed and endurance make it a strong competitor in the data center and enterprise markets. If more cost-effective and widely adopted, 3D XPoint could reduce demand for 3D NAND.
Covid-19 Impact
The COVID-19 pandemic significantly impacted the 3D NAND flash memory market. Supply chain disruptions, including semiconductor shortages and factory shutdowns, led to delays in production and increased costs. However, the surge in remote work, e-commerce, and digital services drove higher demand for data storage, benefiting the market. The expansion of cloud computing, gaming, and AI applications also fueled growth in SSDs powered by 3D NAND.
The universal flash storage segment is expected to be the largest during the forecast period
The universal flash storage segment is predicted to secure the largest market share throughout the forecast period owing to demand for high-performance memory solutions. The latest versions, universal flash storage 2.1 and universal flash storage 3.1, use advanced NAND flash technology like 3D NAND for faster read and write speeds. The growing adoption of universal flash storage 3.1 in smartphones, tablets, and laptops is boosting demand for high-speed NAND memory, particularly 3D NAND, which meets universal flash storage performance standards, strengthening the 3D NAND market in consumer electronics.
The data centers & cloud services segment is expected to have the highest CAGR during the forecast period
The data centers & cloud services is expected to register lucrative growth during the estimation period due to advanced storage technologies like solid-state drives powered by 3D NAND for rapid data retrieval, real-time processing, and high-speed data transfer. 3D NAND offers faster read/write speeds, lower latency, and enhanced durability compared to traditional storage solutions like HDDs, making it ideal for cloud storage and high-performance computing applications accelerating the growth of the 3D NAND flash memory market.
During the estimation period, the North America region is expected to capture the largest market share owing to North America, particularly the US, is a hub for innovation in storage technologies, with leading semiconductor manufacturers like Intel, Micron Technology, and Western Digital leading the development of 3D NAND flash memory. This leadership in technological innovation accelerates the development and adoption of 3D NAND flash memory, driving global market growth through pioneering innovations like multi-level cell (MLC), triple-level cell (TLC), and quad-level cell (QLC) 3D NAND memory.
Over the forecasted timeframe, the Asia Pacific is anticipated to exhibit the highest CAGR due to region's digital transformation is boosting the demand for robust data storage solutions, especially in cloud computing, big data analytics, and AI-based applications. High-performance storage solutions, such as 3D NAND, are well-suited for these services due to their speed, reliability, and endurance. The demand for 3D NAND is increasing due to the expansion of cloud services and data centers across APAC, fostering market growth.
Key players in the market
Some of the key players in 3D Nand Flash Memory market include Samsung Electronics Co.Ltd., Toshiba Corporation, SK Hynix Semiconductor Inc., Micron Technology Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd, Advanced Micro Devices, STMicroelectronics, SanDisk Corporation, Western Digital, VIA Technologies INC, Infineon Technologies AG, Microchip Technology Inc., ON Semiconductor, Integrated Silicon Solution Inc. and Realtek Semiconductor Corp.
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Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.