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市场调查报告书
商品编码
1787953

2032 年宽能带隙半导体市场预测：按材料类型、设备类型、组件类型、最终用户和地区进行的全球分析

Wide Band Gap Semiconductor Market Forecasts to 2032 - Global Analysis By Material Type (Silicon Carbide, Gallium Nitride, Boron Nitride,Aluminum Nitride and Other Material Types), Device Type, Component Type, End User, and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3个工作天内

价格

根据 Stratistics MRC 的数据，全球宽能带隙半导体市场预计在 2025 年达到 23 亿美元，到 2032 年将达到 62 亿美元，预测期内的复合年增长率为 14.7%。

宽能带隙(WBG) 半导体是指比硅等传统半导体有较大能带隙的材料。这项特性使其能够在更高的电压、温度和频率下工作。常见的 WBG 材料包括碳化硅 (SiC) 和氮化镓 (GaN)。这些半导体具有优异的电气性能，包括耐高压、低开关损耗和优异的导热性。这些半导体非常适合需要稳定功率转换和高速讯号处理的高效能应用。

扩大5G基础设施和资料中心部署

高频、高功率通讯系统的快速发展，以及5G网路和超大规模资料中心的广泛部署，正在推动对宽能带隙半导体的需求。这些材料比传统硅具有更高的击穿电压、更高的效率和更快的开关能力。随着基地台和边缘运算单元在全球范围内的扩张，GaN和SiC等宽频隙半导体越来越多地被整合到射频前端、功率放大器和伺服器中，从而在高速资料环境中提供增强的热稳定性和性能。

製造成本高、製造流程复杂

宽能带隙半导体的生产需要先进的製造技术和高成本的基板，例如碳化硅和氮化镓。这些製程需要超洁净环境、精确的温度控制和专用设备，这导致高昂的资本投入，限制了其大规模应用。此外，晶体生长和装置製造过程中的产量比率损失也会推高总成本。这些经济负担阻碍了中小型公司进入市场，并减缓了从传统硅基元件的转型，尤其是在对成本敏感的终端应用产业。

扩大可再生能源电网

太阳能和风能电网的扩张为宽能带隙半导体创造了巨大的机会。它们在电力转换和高压应用中的卓越效率使其成为逆变器、能源储存系统和智慧电网基础设施的理想选择。随着各国政府投资升级电网和整合分散式能源系统，预计宽能带隙元件的需求将会增加。此外，这些材料有助于减少能源损失，并改善恶劣户外环境下的温度控管。

智慧财产纠纷

宽能带隙半导体领域正经历日益增加的专利和智慧财产权纠纷，尤其是在现有的材料和装置製造商之间。快速的创新和确保技术领先地位的竞争压力常常导致重迭的索赔和法律纠纷。这些纠纷可能会延迟产品商业化，扰乱供应链，并产生法律成本。此外，由于现有企业持有大量的专利组合，新兴新兴企业可能面临进入壁垒，这可能会抑制这一发展中领域的创新和市场多样性。

COVID-19的影响

新冠疫情最初扰乱了宽能带隙半导体市场，原因是供应链瓶颈、劳动力短缺以及汽车和工业领域的部署延迟。然而，疫情加速了数位转型，刺激了对宽禁带半导体关键应用领域的需求，包括高效能运算、电力电子和远端连线。在復苏阶段，对绿色能源和电动车的投资增加进一步推动了成长。因此，在后疫情时代，宽禁带材料已成为韧性和永续技术的重要组成部分。

氮化镓市场预计将在预测期内占据最大份额

预计氮化镓领域将在预测期内占据最大的市场占有率，这得益于其出色的高频性能、低传导损耗和高效的热处理。氮化镓基半导体因其紧凑的尺寸和高能效，广泛应用于射频、电力电子和快速充电应用。随着电讯、国防和家用电子电器领域需求的不断增长，氮化镓技术将继续占据主导地位。其成熟的供应链、日趋成熟的製造流程以及在电动车和5G网路中日益增长的应用，正在巩固其市场领导地位。

预计功率元件部分在预测期内将实现最高的复合年增长率。

预计功率元件领域将在预测期内实现最高成长率，这得益于电动车、可再生能源系统和工业自动化领域对高效能能源转换和管理日益增长的需求。宽能带隙功率元件提供更快的开关速度、更低的热损耗和更高的工作电压，进而提升整体系统效能。 SiC 和 GaN 装置在逆变器、转换器和汽车充电器的应用日益广泛，也推动了该领域的发展。交通运输和公共产业的电气化趋势将进一步增强该领域的发展势头。

最大共享区域

预计亚太地区将在预测期内占据最大的市场占有率，这得益于其强大的半导体製造生态系统、电动车产量的成长以及5G基础设施的部署。中国大陆、日本、韩国和台湾等国家和地区正在大力投资下一代电子产品和可再生能源发电，从而推动了对宽频隙半导体（WBG）装置的需求。此外，政府的支持性倡议、熟练的劳动力以及与跨国公司的战略伙伴关係也有助于该地区占据主导地位。亚太地区将继续成为宽频隙技术消费和生产的关键枢纽。

复合年增长率最高的地区

由于电动车、先进国防电子产品的加速普及以及强大的研发生态系统，北美地区预计将在预测期内呈现最高的复合年增长率。在公共和私人投资的推动下，该地区对节能係统的高度重视正在刺激宽能带隙半导体的采用。此外，美国公司正在扩大其GaN和SiC製造产能，以满足日益增长的国内需求。对电气化、智慧基础设施和清洁能源的重视正在增强北美的成长轨迹。

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目录

第一章执行摘要

第二章 前言

  • 概述
  • 相关利益者
  • 调查范围
  • 调查方法
    • 资料探勘
    • 数据分析
    • 数据检验
    • 研究途径
  • 研究材料
    • 主要研究资料
    • 二手研究资料
    • 先决条件

第三章市场走势分析

  • 介绍
  • 驱动程式
  • 抑制因素
  • 机会
  • 威胁
  • 最终用户分析
  • 新兴市场
  • COVID-19的影响

第四章 波特五力分析

  • 供应商的议价能力
  • 买方的议价能力
  • 替代品的威胁
  • 新进入者的威胁
  • 竞争对手之间的竞争

5. 全球宽能带隙半导体市场（依材料类型）

  • 介绍
  • 碳化硅
  • 氮化镓
  • 氮化硼
  • 氮化铝
  • 其他的

6. 全球宽能带隙半导体市场（依设备类型）

  • 介绍
  • 功率元件
  • 射频设备
  • 光电器件

7. 全球宽能带隙半导体市场（依组件类型）

  • 介绍
  • 二极体
  • 电晶体
  • 模组
  • 基材

8. 全球宽能带隙半导体市场（依最终用户）

  • 介绍
  • 车
  • 家用电子电器
  • 通讯
  • 能源公用事业
  • 航太和国防
  • 其他的

9. 全球宽能带隙半导体市场（按地区）

  • 介绍
  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 欧洲
    • 德国
    • 英国
    • 义大利
    • 法国
    • 西班牙
    • 其他欧洲国家
  • 亚太地区
    • 日本
    • 中国
    • 印度
    • 澳洲
    • 纽西兰
    • 韩国
    • 其他亚太地区
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地区
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 卡达
    • 南非
    • 其他中东和非洲地区

第十章：主要发展

  • 协议、伙伴关係、合作和合资企业
  • 收购与合併
  • 新产品发布
  • 业务扩展
  • 其他关键策略

第十一章 公司概况

  • Toshiba Corporation
  • STMicroelectronics
  • Rohm Semiconductor
  • Texas Instruments
  • ON Semiconductor
  • Skyworks Solutions
  • Nexperia
  • Infineon Technologies
  • Cree
  • IIVI Incorporated
  • Analog Devices
  • Microchip Technology
  • Broadcom
  • Navitas Semiconductor
  • Qorvo
  • Mersen SA
  • Everlight Electronics Co.
  • GaN Systems Inc.
Product Code: SMRC30218

According to Stratistics MRC, the Global Wide Band Gap Semiconductor Market is accounted for $2.3 billion in 2025 and is expected to reach $6.2 billion by 2032 growing at a CAGR of 14.7% during the forecast period. Wide Band Gap (WBG) semiconductors are materials with a larger energy band gap than conventional semiconductors like silicon. This property allows them to operate at higher voltages, temperatures, and frequencies. Common WBG materials include silicon carbide (SiC) and gallium nitride (GaN). These semiconductors exhibit superior electrical characteristics such as high breakdown voltage, low switching loss, and better thermal conductivity. They are ideal for high-performance applications requiring robust power conversion and fast signal processing.

Market Dynamics:

Driver:

Growing deployment of 5G infrastructure and data centers

The surge in high-frequency and high-power communication systems, the widespread deployment of 5G networks and hyperscale data centers is driving demand for wide band gap semiconductors. These materials offer higher breakdown voltages, greater efficiency, and faster switching capabilities than conventional silicon. As 5G base stations and edge computing units expand globally, WBG semiconductors such as GaN and SiC are increasingly integrated into RF front-ends, power amplifiers, and servers, enhancing thermal stability and performance in high-speed data environments.

Restraint:

High production costs and complex fabrication processes

The production of wide band gap semiconductors involves sophisticated manufacturing techniques and high-cost substrates like silicon carbide and gallium nitride. These processes require ultra-clean environments, precise temperature control, and specialized equipment, which increase capital expenditure and limit mass adoption. Additionally, yield losses during crystal growth and device fabrication add to overall costs. This financial burden discourages small and mid-tier players from entering the market and slows the transition from traditional silicon-based devices, especially in cost-sensitive end-use industries.

Opportunity:

Expansion of renewable energy grids

The expansion of solar and wind energy grids is generating significant opportunities for wide band gap semiconductors. Their superior efficiency in power conversion and high-voltage applications makes them ideal for inverters, energy storage systems, and smart grid infrastructure. As governments invest in upgrading electrical grids and integrating decentralized energy systems, demand for WBG devices is set to rise. Moreover, these materials contribute to reducing energy losses and improving thermal management in harsh outdoor environments.

Threat:

Intellectual property disputes

The wide band gap semiconductor space is increasingly subject to patent battles and intellectual property disputes, especially among established material and device manufacturers. Competitive pressures to innovate rapidly and secure technological leadership often result in overlapping claims and legal conflicts. These disputes can delay product commercialization, disrupt supply chains, and impose legal costs. Furthermore, emerging players may face entry barriers due to the extensive patent portfolios held by incumbents, potentially stifling innovation and market diversity in this evolving sector.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the wide band gap semiconductor market due to supply chain bottlenecks, labor shortages, and delayed deployments in automotive and industrial sectors. However, the pandemic also accelerated digital transformation, fueling demand for high-performance computing, power electronics, and remote connectivity-all key application areas for WBG semiconductors. Increased investments in green energy and electric vehicles during the recovery phase further revived growth. Consequently, the post-COVID landscape has positioned WBG materials as vital components in resilient and sustainable technologies.

The gallium nitride segment is expected to be the largest during the forecast period

The gallium nitride segment is expected to account for the largest market share during the forecast period, owing to its superior high-frequency performance, low conduction losses, and efficient thermal handling. GaN-based semiconductors are widely adopted in RF, power electronics, and fast-charging applications due to their compact size and energy efficiency. With rising demand in telecom, defense, and consumer electronics, GaN technology continues to dominate. Its established supply chain, maturing fabrication processes, and expanding use in EVs and 5G networks reinforce its market leadership.

The power devices segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the power devices segment is predicted to witness the highest growth rate impelled by, the growing need for efficient energy conversion and management in electric vehicles, renewable energy systems, and industrial automation. Wide band gap power devices deliver faster switching speeds, reduced thermal losses, and higher voltage operation, enhancing overall system performance. Increasing adoption of SiC and GaN components in inverters, converters, and onboard chargers accelerates this segment. Electrification trends across transportation and utilities further strengthen its trajectory.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share, driven by a strong semiconductor manufacturing ecosystem, rising EV production, and 5G infrastructure rollouts. Countries such as China, Japan, South Korea, and Taiwan are heavily investing in next-generation electronics and renewable energy, fueling demand for WBG devices. Additionally, supportive government policies, skilled labor, and strategic partnerships with global players contribute to regional dominance. Asia Pacific remains a key hub for both consumption and production of WBG technologies.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR attributed to, accelerating EV adoption, advanced defense electronics, and a robust R&D ecosystem. The region's strong focus on energy-efficient systems, backed by public and private investments, is spurring the adoption of wide band gap semiconductors. Furthermore, U.S.-based companies are expanding their GaN and SiC manufacturing capabilities to meet rising domestic demand. The emphasis on electrification, smart infrastructure, and clean energy amplifies North America's growth trajectory.

Key players in the market

Some of the key players in Wide Band Gap Semiconductor Market include Toshiba Corporation, STMicroelectronics, Rohm Semiconductor, Texas Instruments, ON Semiconductor, Skyworks Solutions, Nexperia, Infineon Technologies, Cree, IIVI Incorporated, Analog Devices, Microchip Technology, Broadcom, Navitas Semiconductor, Qorvo, Mersen S.A., Everlight Electronics Co., and GaN Systems Inc.

Key Developments:

In July 2025, Infineon Technologies launched its next-gen 650V CoolGaN(TM) transistors, designed to enhance efficiency in EV onboard chargers and data center power supplies by minimizing switching losses.

In June 2025, STMicroelectronics disclosed the expansion of its SiC (silicon carbide) wafer fabrication line in Catania, Italy, aiming to strengthen supply for industrial drives and renewable energy inverters.

In May 2025, Navitas Semiconductor introduced its GaNFast(TM) ICs with upgraded thermal management for ultra-fast charging applications in consumer electronics, targeting OEMs in North America and Asia.

In April 2025, Rohm Semiconductor partnered with a major Japanese automaker to co-develop SiC-based power modules for future electric vehicle platforms, focusing on extending driving range and inverter efficiency.

Material Types Covered:

  • Silicon Carbide
  • Gallium Nitride
  • Boron Nitride
  • Aluminum Nitride
  • Other Material Types

Device Types Covered:

  • Power Devices
  • RF Devices
  • Optoelectronic Devices

Component Types Covered:

  • Diodes
  • Transistors
  • Modules
  • Substrates

End Users Covered:

  • Automotive
  • Consumer Electronics
  • Telecommunications
  • Energy & Utility
  • Aerospace & Defense
  • Other End Users

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 End User Analysis
  • 3.7 Emerging Markets
  • 3.8 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Wide Band Gap Semiconductor Market, By Material Type

  • 5.1 Introduction
  • 5.2 Silicon Carbide
  • 5.3 Gallium Nitride
  • 5.4 Boron Nitride
  • 5.5 Aluminum Nitride
  • 5.6 Other Material Types

6 Global Wide Band Gap Semiconductor Market, By Device Type

  • 6.1 Introduction
  • 6.2 Power Devices
  • 6.3 RF Devices
  • 6.4 Optoelectronic Devices

7 Global Wide Band Gap Semiconductor Market, By Component Type

  • 7.1 Introduction
  • 7.2 Diodes
  • 7.3 Transistors
  • 7.4 Modules
  • 7.5 Substrates

8 Global Wide Band Gap Semiconductor Market, By End User

  • 8.1 Introduction
  • 8.2 Automotive
  • 8.3 Consumer Electronics
  • 8.4 Telecommunications
  • 8.5 Energy & Utility
  • 8.6 Aerospace & Defense
  • 8.7 Other End Users

9 Global Wide Band Gap Semiconductor Market, By Geography

  • 9.1 Introduction
  • 9.2 North America
    • 9.2.1 US
    • 9.2.2 Canada
    • 9.2.3 Mexico
  • 9.3 Europe
    • 9.3.1 Germany
    • 9.3.2 UK
    • 9.3.3 Italy
    • 9.3.4 France
    • 9.3.5 Spain
    • 9.3.6 Rest of Europe
  • 9.4 Asia Pacific
    • 9.4.1 Japan
    • 9.4.2 China
    • 9.4.3 India
    • 9.4.4 Australia
    • 9.4.5 New Zealand
    • 9.4.6 South Korea
    • 9.4.7 Rest of Asia Pacific
  • 9.5 South America
    • 9.5.1 Argentina
    • 9.5.2 Brazil
    • 9.5.3 Chile
    • 9.5.4 Rest of South America
  • 9.6 Middle East & Africa
    • 9.6.1 Saudi Arabia
    • 9.6.2 UAE
    • 9.6.3 Qatar
    • 9.6.4 South Africa
    • 9.6.5 Rest of Middle East & Africa

10 Key Developments

  • 10.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 10.2 Acquisitions & Mergers
  • 10.3 New Product Launch
  • 10.4 Expansions
  • 10.5 Other Key Strategies

11 Company Profiling

  • 11.1 Toshiba Corporation
  • 11.2 STMicroelectronics
  • 11.3 Rohm Semiconductor
  • 11.4 Texas Instruments
  • 11.5 ON Semiconductor
  • 11.6 Skyworks Solutions
  • 11.7 Nexperia
  • 11.8 Infineon Technologies
  • 11.9 Cree
  • 11.10 IIVI Incorporated
  • 11.11 Analog Devices
  • 11.12 Microchip Technology
  • 11.13 Broadcom
  • 11.14 Navitas Semiconductor
  • 11.15 Qorvo
  • 11.16 Mersen S.A.
  • 11.17 Everlight Electronics Co.
  • 11.18 GaN Systems Inc.

List of Tables

  • Table 1 Global Wide Band Gap Semiconductor Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Wide Band Gap Semiconductor Market Outlook, By Material Type (2024-2032) ($MN)
  • Table 3 Global Wide Band Gap Semiconductor Market Outlook, By Silicon Carbide (2024-2032) ($MN)
  • Table 4 Global Wide Band Gap Semiconductor Market Outlook, By Gallium Nitride (2024-2032) ($MN)
  • Table 5 Global Wide Band Gap Semiconductor Market Outlook, By Boron Nitride (2024-2032) ($MN)
  • Table 6 Global Wide Band Gap Semiconductor Market Outlook, By Aluminum Nitride (2024-2032) ($MN)
  • Table 7 Global Wide Band Gap Semiconductor Market Outlook, By Other Material Types (2024-2032) ($MN)
  • Table 8 Global Wide Band Gap Semiconductor Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 9 Global Wide Band Gap Semiconductor Market Outlook, By Power Devices (2024-2032) ($MN)
  • Table 10 Global Wide Band Gap Semiconductor Market Outlook, By RF Devices (2024-2032) ($MN)
  • Table 11 Global Wide Band Gap Semiconductor Market Outlook, By Optoelectronic Devices (2024-2032) ($MN)
  • Table 12 Global Wide Band Gap Semiconductor Market Outlook, By Component Type (2024-2032) ($MN)
  • Table 13 Global Wide Band Gap Semiconductor Market Outlook, By Diodes (2024-2032) ($MN)
  • Table 14 Global Wide Band Gap Semiconductor Market Outlook, By Transistors (2024-2032) ($MN)
  • Table 15 Global Wide Band Gap Semiconductor Market Outlook, By Modules (2024-2032) ($MN)
  • Table 16 Global Wide Band Gap Semiconductor Market Outlook, By Substrates (2024-2032) ($MN)
  • Table 17 Global Wide Band Gap Semiconductor Market Outlook, By End User (2024-2032) ($MN)
  • Table 18 Global Wide Band Gap Semiconductor Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 19 Global Wide Band Gap Semiconductor Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 20 Global Wide Band Gap Semiconductor Market Outlook, By Telecommunications (2024-2032) ($MN)
  • Table 21 Global Wide Band Gap Semiconductor Market Outlook, By Energy & Utility (2024-2032) ($MN)
  • Table 22 Global Wide Band Gap Semiconductor Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 23 Global Wide Band Gap Semiconductor Market Outlook, By Other End Users (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.