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绝缘栅双极电晶体 (IGBT) 市场预测（至 2032 年）：按类型、额定功率、开关频率、封装类型、晶圆尺寸、最终用户和地区进行的全球分析

Insulated-Gate Bipolar Transistors (IGBTs) Market Forecasts to 2032 - Global Analysis By Type (Discrete IGBT, IGBT Module and Intelligent Power Module (IPM)), Power Rating, Switching Frequency, Packaging Type, Wafer Size, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3个工作天内

价格

根据 Stratistics MRC 的数据，全球绝缘栅双极电晶体 (IGBT) 市场预计在 2025 年达到 151 亿美元，到 2032 年将达到 294 亿美元，预测期内的复合年增长率为 10%。

绝缘栅双极电晶体 (IGBT) 是一种半导体装置，它结合了 MOSFET 的高输入电阻和双极电晶体的低饱和压降，从而实现高效的功率开关。 IGBT 广泛应用于电动车、可再生能源系统、马达驱动装置和工业设备等应用。 IGBT 能够实现高效的功率转换，处理高电压和高电流，同时降低能量损耗。其设计支援要求严苛的电子系统的小型化、坚固性和可靠性。

据国际能源总署（IEA）称，电动车产量和电动车充电基础设施的爆炸性成长是下一代IGBT模组製造能力提升和技术创新的主要驱动力。

高效电力电子的需求

IGBT 市场受到日益增长的高效电力电子元件需求的强劲推动，这些元件能够实现节能和高效能转换。可再生能源、电动车和工业驱动装置的应用日益增多，凸显了对可靠开关元件的需求。 IGBT 具有低传导损耗、高电流密度和高耐用性，是现代电源架构不可或缺的装置。此外，随着各行各业寻求节能解决方案，全球永续性的趋势也进一步推动了 IGBT 的应用。这一趋势巩固了 IGBT 作为先进电子系统基石的地位。

IGBT 的温度控管挑战

IGBT 市场发展的主要限制因素在于其温度控管挑战，这阻碍了其实现最佳性能。高开关损耗和传导损耗会产生热量，需要复杂的冷却系统来确保可靠性。这增加了设计复杂性和成本，尤其是在电动车逆变器和电网系统等高压应用中。如果无法有效管理热量，则会降低效率和装置寿命，从而阻碍其广泛应用。因此，对于寻求在高能耗、高效能应用中推广 IGBT 的製造商来说，热瓶颈仍然是一个持续存在的障碍。

整合到工业自动化系统中

IGBT 与工业自动化系统的整合代表着巨大的市场扩展机会。自动化製造、机器人技术和智慧工厂依赖高效的功率装置来精确驱动马达和控制系统。 IGBT 能够实现紧凑、节能的设计，从而降低营运成本并提高生产力。随着工业 4.0 在全球范围内的加速应用，对可靠功率半导体的需求也随之飙升。这项产业转型为 IGBT 供应商扩大市场范围并进入各种自动化驱动应用领域提供了肥沃的土壤。

与宽能带隙半导体的竞争

IGBT 市场面临来自 SiC 和 GaN 等宽能带隙半导体的显着威胁。这些替代半导体具有卓越的效率、更快的开关速度和更佳的热性能，对电动车和可再生逆变器等应用中的 IGBT 构成了挑战。随着 SiC 和 GaN 装置成本的下降，终端用户越来越多地转向这些先进材料。这一趋势可能会限制 IGBT 在高效能领域的成长。因此，儘管 IGBT 仍然很重要，但来自宽能带隙技术的竞争将对 IGBT 的主导地位构成长期风险。

COVID-19的影响

新冠疫情扰乱了IGBT市场的供应链，导致生产停顿和出货放缓。作为主要终端用户的汽车和工业领域一度放缓，导致需求下降。然而，在电动车普及率加快、可再生能源投资和数位转型倡议的推动下，市场復苏迅速。疫情过后，世界各国政府更加重视绿色能源计划，为IGBT在电网和行动移动领域的应用创造了新的机会。整体而言，儘管短期内遭遇了重大挫折，但疫情凸显了高韧性、高能源效率的电力电子解决方案的重要性。

预计分立式 IGBT 市场在预测期内将占据最大份额

由于分立式IGBT广泛应用于马达驱动器、UPS系统和可再生能源逆变器，预计将在预测期内占据最大的市场份额。分离式IGBT具有灵活性、紧凑的设计和成本优势，非常适合汽车、家电和工业领域的中等功率应用。其易于整合和可靠性确保了其在新兴市场的持续应用。因此，分立式IGBT仍然是全球电力电子领域的主要产品类型。

预计预测期内离散封装部分将以最高的复合年增长率成长。

由于对紧凑型和高热效率电源解决方案的需求不断增长，预计分立封装领域将在预测期内实现最高成长率。与基于模组的设计相比，分立封装具有更高的扩充性、更易于设计整合和成本优化。它们在汽车电子产品（尤其是电动车逆变器和充电系统）中的作用日益增强，进一步刺激了其应用。此外，先进的封装技术提高了可靠性和效率。这些优势使分立封装成为IGBT市场成长最快的领域。

比最大的地区

受快速工业化、电动车产量扩张以及强劲的可再生能源计画的推动，亚太地区预计将在预测期内占据最大的市场份额。中国、日本和韩国等国家是功率半导体的主要采用者，拥有强大的製造生态系统。在智慧电网、交通电气化和家用电器领域的巨额投资进一步刺激了该地区的需求。此外，低成本的製造能力也吸引了全球供应商。这些动态使亚太地区成为IGBT部署和创新的关键枢纽。

复合年增长率最高的地区

预计北美地区在预测期内将出现最高的复合年增长率。这得归功于电动车的普及、可再生能源的整合以及工业自动化的加速发展。政府支持减少二氧化碳排放和采用清洁能源的政策正在活性化对先进电力电子装置的投资。汽车电气化和电网现代化计划，尤其是在美国，正在推动对 IGBT 的需求。此外，技术创新者和研发中心的存在也推动了该地区的成长。这些因素共同作用，使北美成为成长最快的 IGBT 市场。

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目录

第一章执行摘要

第二章 前言

  • 概述
  • 相关利益者
  • 调查范围
  • 调查方法
    • 资料探勘
    • 数据分析
    • 数据检验
    • 研究途径
  • 研究材料
    • 主要研究资料
    • 次级研究资讯来源
    • 先决条件

第三章市场走势分析

  • 驱动程式
  • 抑制因素
  • 机会
  • 威胁
  • 最终用户分析
  • 新兴市场
  • COVID-19的影响

第四章 波特五力分析

  • 供应商的议价能力
  • 买方的议价能力
  • 替代品的威胁
  • 新进入者的威胁
  • 竞争对手之间的竞争

5. 全球绝缘栅双极电晶体（IGBT）市场类型

  • 分立IGBT
  • IGBT模组
  • 智慧功率模组（IPM）

6. 全球绝缘栅双极电晶体 (IGBT) 市场（按功率等级）

  • 低功率IGBT（最高600V）
  • 中功率IGBT（601 V至1.2 kV）
  • 高功率IGBT（1.2kV至3.3kV）
  • 高功率IGBT（3.3kV至6.5kV）

7. 全球绝缘栅双极电晶体 (IGBT) 市场（按开关频率）

  • 低频IGBT（10kHz以下）
  • 高频IGBT（10kHz或更高）

8. 全球绝缘栅双极电晶体（IGBT）市场（以封装类型）

  • 分立封装
  • 模组包
  • 双列直插式封装（DIP）
  • 表面黏着技术封装（SMD）
  • 压接式IGBT

9. 全球绝缘栅双极电晶体（IGBT）市场（以晶圆尺寸）

  • 6吋晶圆
  • 8吋晶圆

第 10 章全球绝缘栅双极电晶体 (IGBT) 市场（按最终用户）

  • 汽车和运输
  • 能源与公共产业
  • 工业製造
  • 家电
  • 其他的

第 11 章全球绝缘栅双极电晶体 (IGBT) 市场（按地区）

  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 欧洲
    • 德国
    • 英国
    • 义大利
    • 法国
    • 西班牙
    • 其他欧洲国家
  • 亚太地区
    • 日本
    • 中国
    • 印度
    • 澳洲
    • 纽西兰
    • 韩国
    • 其他亚太地区
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 其他南美
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 卡达
    • 南非
    • 其他中东和非洲地区

第十二章 重大进展

  • 协议、伙伴关係、合作和合资企业
  • 收购与合併
  • 新产品发布
  • 业务扩展
  • 其他关键策略

第十三章：企业概况

  • Infineon Technologies AG
  • Mitsubishi Electric Corporation
  • Fuji Electric Co., Ltd.
  • ON Semiconductor（onsemi）
  • STMicroelectronics
  • Toshiba Corporation
  • Renesas Electronics Corporation
  • ROHM Co., Ltd.
  • SEMIKRON Danfoss
  • ABB Ltd
  • Hitachi, Ltd.
  • NXP Semiconductors
  • Littelfuse, Inc.
  • Vishay Intertechnology, Inc.
  • ELAN Electronics
  • Powerex
  • SMIC
  • Microsemi
Product Code: SMRC30740

According to Stratistics MRC, the Global Insulated-Gate Bipolar Transistors (IGBTs) Market is accounted for $15.1 billion in 2025 and is expected to reach $29.4 billion by 2032 growing at a CAGR of 10% during the forecast period. Insulated-Gate Bipolar Transistors (IGBTs) are semiconductor devices that combine the high input impedance of MOSFETs with the low saturation voltage of bipolar transistors, making them highly efficient for power switching. They are used in applications such as electric vehicles, renewable energy systems, motor drives, and industrial equipment. IGBTs enable efficient power conversion, reducing energy losses while handling high voltages and currents. Their design supports compactness, durability, and reliability in demanding electronic systems.

According to the International Energy Agency (IEA), the explosive growth in electric vehicle production and EV charging infrastructure is the primary driver for increased manufacturing capacity and innovation in next-generation IGBT modules.

Market Dynamics:

Driver:

Demand for efficient power electronics

The IGBT market is strongly driven by the growing demand for efficient power electronics that enable energy savings and high-performance conversion. Increasing applications in renewable energy, electric vehicles, and industrial drives emphasize the need for reliable switching devices. IGBTs offer low conduction losses, high current density, and durability, making them vital in modern power architectures. Additionally, the global shift toward sustainability further boosts adoption, as industries seek energy-efficient solutions. This trend solidifies IGBTs as a cornerstone in advanced electronic systems.

Restraint:

Thermal management challenges in IGBTs

A major restraint in the IGBT market stems from thermal management challenges that hinder optimal performance. High switching and conduction losses generate heat, requiring advanced cooling systems for reliability. This increases design complexity and costs, especially in high-voltage applications like EV inverters and grid systems. Failure to effectively manage heat can reduce efficiency and device lifespan, discouraging wider adoption. Consequently, thermal bottlenecks remain a persistent hurdle for manufacturers aiming to expand IGBT deployment across energy-intensive and high-performance sectors.

Opportunity:

Integration in industrial automation systems

The integration of IGBTs in industrial automation systems represents a key opportunity for market expansion. Automated manufacturing, robotics, and smart factories rely on high-efficiency power devices to drive motors and control systems with precision. IGBTs enable compact, energy-efficient designs that reduce operational costs while enhancing productivity. With Industry 4.0 adoption accelerating worldwide, demand for reliable power semiconductors is surging. This industrial transformation provides a fertile ground for IGBT suppliers to expand market reach and tap into diverse automation-driven applications.

Threat:

Competition from wide bandgap semiconductors

The IGBT market faces a notable threat from wide bandgap semiconductors such as SiC and GaN. These alternatives offer superior efficiency, higher switching speeds, and better thermal performance, challenging IGBTs in applications like EVs and renewable inverters. As costs for SiC and GaN devices decline, end-users are increasingly shifting to these advanced materials. This trend could potentially limit IGBT growth in high-performance segments. Therefore, while IGBTs remain relevant, competition from wide bandgap technologies poses a long-term risk to their dominance.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted supply chains, halting production and delaying shipments in the IGBT market. Automotive and industrial sectors, key end-users, experienced a temporary downturn, reducing demand. However, recovery was swift, fueled by accelerated EV adoption, renewable energy investments, and digital transformation initiatives. Post-pandemic, governments emphasized green energy projects, creating new opportunities for IGBTs in grid and mobility applications. Overall, while short-term setbacks were significant, the pandemic underscored the importance of resilient and energy-efficient power electronics solutions.

The discrete IGBT segment is expected to be the largest during the forecast period

The discrete IGBT segment is expected to account for the largest market share during the forecast period, owing to its widespread use in motor drives, UPS systems, and renewable energy inverters. Discrete IGBTs offer flexibility, compact design, and cost advantages, making them suitable for medium-power applications across automotive, consumer electronics, and industrial domains. Their ease of integration and reliability have ensured continued adoption across emerging markets. Consequently, discrete IGBTs remain the dominant product type in the global power electronics landscape.

The discrete packaging segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the discrete packaging segment is predicted to witness the highest growth rate, driven by rising demand for compact and thermally efficient power solutions. Discrete packages enable better scalability, ease of design integration, and cost optimization compared to module-based designs. Their expanding role in automotive electronics, especially EV inverters and charging systems, further accelerates adoption. Moreover, advancements in packaging technologies improve reliability and efficiency. These advantages collectively position discrete packaging as the fastest-expanding segment in the IGBT market.

Region with largest share:

During the forecast period, the Asia Pacific region is expected to hold the largest market share, driven by rapid industrialization, expanding EV production, and strong renewable energy initiatives. Countries like China, Japan, and South Korea are leading adopters, with robust manufacturing ecosystems for power semiconductors. Significant investments in smart grids, transportation electrification, and consumer electronics further amplify regional demand. Additionally, low-cost manufacturing capabilities attract global suppliers. These dynamics establish Asia Pacific as the dominant hub for IGBT deployment and innovation.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, attributed to accelerating EV adoption, renewable integration, and industrial automation. Government policies supporting carbon reduction and clean energy deployment drive strong investments in advanced power electronics. The U.S. in particular is witnessing rising demand for IGBTs in automotive electrification and grid modernization projects. Additionally, the presence of technology innovators and R&D centers accelerates regional growth. Together, these factors make North America the fastest-growing IGBT market.

Key players in the market

Some of the key players in Insulated-Gate Bipolar Transistors (IGBTs) Market include Infineon Technologies AG, Mitsubishi Electric Corporation, Fuji Electric Co., Ltd., ON Semiconductor (onsemi), STMicroelectronics, Toshiba Corporation, Renesas Electronics Corporation, ROHM Co., Ltd., SEMIKRON Danfoss, ABB Ltd, Hitachi, Ltd., NXP Semiconductors, Littelfuse, Inc., Vishay Intertechnology, Inc., ELAN Electronics, Powerex, SMIC, and Microsemi.

Key Developments:

In May 2025, Infineon Technologies AG began volume production of its new CoolSiC(TM) hybrid IGBTs at its expanded facility in Villach, Austria. These modules combine Si IGBT and SiC diode technology to offer a cost-effective performance boost for industrial motor drives.

In April 2025, STMicroelectronics and Renault Group signed a long-term agreement for the supply of ST's ACEPACK DRIVE power modules, which use advanced IGBTs and SiC technology, for Renault's upcoming electric vehicle platforms.

In March 2025, onsemi (ON Semiconductor) announced the opening of its state-of-the-art IGBT and SiC module production line in Bucheon, South Korea, to better serve the growing APAC market for electric vehicle and industrial automation power solutions.

In February 2025, Fuji Electric Co., Ltd. launched the "X-series" of 7th generation IGBT modules, which feature a 10% increase in maximum operating temperature (Tvjop) to 175°C, enabling higher power density in solar inverters and UPS systems.

Types Covered:

  • Discrete IGBT
  • IGBT Module
  • Intelligent Power Module (IPM)

Power Ratings Covered:

  • Low Power IGBT (Up to 600 V)
  • Medium Power IGBT (601 V - 1.2 kV)
  • High Power IGBT (1.2 kV - 3.3 kV)
  • Very High Power IGBT (3.3 kV - 6.5 kV)

Switching Frequencies Covered:

  • Low-Frequency IGBT (Below 10 kHz)
  • High-Frequency IGBT (Above 10 kHz)

Packaging Types Covered:

  • Discrete Packaging
  • Module Packaging
  • Dual-In-Line Package (DIP)
  • Surface-Mount Package (SMD)
  • Press-Pack IGBT

Wafer Sizes Covered:

  • 6-Inch Wafer
  • 8-Inch Wafer

End Users Covered:

  • Automotive & Transportation
  • Energy & Utilities
  • Industrial Manufacturing
  • Consumer Electronics
  • Other End Users

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 End User Analysis
  • 3.7 Emerging Markets
  • 3.8 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Type

  • 5.1 Introduction
  • 5.2 Discrete IGBT
  • 5.3 IGBT Module
  • 5.4 Intelligent Power Module (IPM)

6 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Power Rating

  • 6.1 Introduction
  • 6.2 Low Power IGBT (Up to 600 V)
  • 6.3 Medium Power IGBT (601 V - 1.2 kV)
  • 6.4 High Power IGBT (1.2 kV - 3.3 kV)
  • 6.5 Very High Power IGBT (3.3 kV - 6.5 kV)

7 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Switching Frequency

  • 7.1 Introduction
  • 7.2 Low-Frequency IGBT (Below 10 kHz)
  • 7.3 High-Frequency IGBT (Above 10 kHz)

8 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Packaging Type

  • 8.1 Introduction
  • 8.2 Discrete Packaging
  • 8.3 Module Packaging
  • 8.4 Dual-In-Line Package (DIP)
  • 8.5 Surface-Mount Package (SMD)
  • 8.6 Press-Pack IGBT

9 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Wafer Size

  • 9.1 Introduction
  • 9.2 6-Inch Wafer
  • 9.3 8-Inch Wafer

10 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By End User

  • 10.1 Introduction
  • 10.2 Automotive & Transportation
  • 10.3 Energy & Utilities
  • 10.4 Industrial Manufacturing
  • 10.5 Consumer Electronics
  • 10.6 Other End Users

11 Global Insulated-Gate Bipolar Transistors (IGBTs) Market, By Geography

  • 11.1 Introduction
  • 11.2 North America
    • 11.2.1 US
    • 11.2.2 Canada
    • 11.2.3 Mexico
  • 11.3 Europe
    • 11.3.1 Germany
    • 11.3.2 UK
    • 11.3.3 Italy
    • 11.3.4 France
    • 11.3.5 Spain
    • 11.3.6 Rest of Europe
  • 11.4 Asia Pacific
    • 11.4.1 Japan
    • 11.4.2 China
    • 11.4.3 India
    • 11.4.4 Australia
    • 11.4.5 New Zealand
    • 11.4.6 South Korea
    • 11.4.7 Rest of Asia Pacific
  • 11.5 South America
    • 11.5.1 Argentina
    • 11.5.2 Brazil
    • 11.5.3 Chile
    • 11.5.4 Rest of South America
  • 11.6 Middle East & Africa
    • 11.6.1 Saudi Arabia
    • 11.6.2 UAE
    • 11.6.3 Qatar
    • 11.6.4 South Africa
    • 11.6.5 Rest of Middle East & Africa

12 Key Developments

  • 12.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 12.2 Acquisitions & Mergers
  • 12.3 New Product Launch
  • 12.4 Expansions
  • 12.5 Other Key Strategies

13 Company Profiling

  • 13.1 Infineon Technologies AG
  • 13.2 Mitsubishi Electric Corporation
  • 13.3 Fuji Electric Co., Ltd.
  • 13.4 ON Semiconductor (onsemi)
  • 13.5 STMicroelectronics
  • 13.6 Toshiba Corporation
  • 13.7 Renesas Electronics Corporation
  • 13.8 ROHM Co., Ltd.
  • 13.9 SEMIKRON Danfoss
  • 13.10 ABB Ltd
  • 13.11 Hitachi, Ltd.
  • 13.12 NXP Semiconductors
  • 13.13 Littelfuse, Inc.
  • 13.14 Vishay Intertechnology, Inc.
  • 13.15 ELAN Electronics
  • 13.16 Powerex
  • 13.17 SMIC
  • 13.18 Microsemi

List of Tables

  • Table 1 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Type (2024-2032) ($MN)
  • Table 3 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Discrete IGBT (2024-2032) ($MN)
  • Table 4 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By IGBT Module (2024-2032) ($MN)
  • Table 5 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Intelligent Power Module (IPM) (2024-2032) ($MN)
  • Table 6 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Power Rating (2024-2032) ($MN)
  • Table 7 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Low Power IGBT (Up to 600 V) (2024-2032) ($MN)
  • Table 8 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Medium Power IGBT (601 V - 1.2 kV) (2024-2032) ($MN)
  • Table 9 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By High Power IGBT (1.2 kV - 3.3 kV) (2024-2032) ($MN)
  • Table 10 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Very High Power IGBT (3.3 kV - 6.5 kV) (2024-2032) ($MN)
  • Table 11 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Switching Frequency (2024-2032) ($MN)
  • Table 12 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Low-Frequency IGBT (Below 10 kHz) (2024-2032) ($MN)
  • Table 13 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By High-Frequency IGBT (Above 10 kHz) (2024-2032) ($MN)
  • Table 14 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Packaging Type (2024-2032) ($MN)
  • Table 15 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Discrete Packaging (2024-2032) ($MN)
  • Table 16 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Module Packaging (2024-2032) ($MN)
  • Table 17 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Dual-In-Line Package (DIP) (2024-2032) ($MN)
  • Table 18 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Surface-Mount Package (SMD) (2024-2032) ($MN)
  • Table 19 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Press-Pack IGBT (2024-2032) ($MN)
  • Table 20 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Wafer Size (2024-2032) ($MN)
  • Table 21 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By 6-Inch Wafer (2024-2032) ($MN)
  • Table 22 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By 8-Inch Wafer (2024-2032) ($MN)
  • Table 23 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By End User (2024-2032) ($MN)
  • Table 24 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Automotive & Transportation (2024-2032) ($MN)
  • Table 25 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Energy & Utilities (2024-2032) ($MN)
  • Table 26 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Industrial Manufacturing (2024-2032) ($MN)
  • Table 27 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 28 Global Insulated-Gate Bipolar Transistors (IGBTs) Market Outlook, By Other End Users (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.