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GaN基板全球市场研究报告2023-2030 年行业分析、规模、份额、增长、趋势和预测Global GaN Substrate Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2023 to 2030 |
全球对 GaN 衬底的需求预计将从 2022 年的 2.2712 亿美元增长到 2030 年的 6.4697 亿美元,在 2022-2030 年研究期间实现 13.98% 的复合年增长率。
氮化镓 (GaN) 是一种用于高功率、高频应用的半导体。 GaN 材料是在蓝宝石、硅和碳化硅等其他材料上生长的薄层。 GaN 衬底是一种半导体材料,与硅、碳化硅、铝和蓝宝石等常见半导体材料相比具有明显的优势。 GaN 通过消除结构缺陷和提高垂直导热性和导电性来提高器件性能。
更宽的带隙、更高的击穿电压、更大的临界电场和更好的导热性是该行业从硅技术转向 GaN 衬底并扩大其市场的一些关键特征。 LED 製造中对 GaN 衬底的需求不断增加以及 GaN 工业设备的接受度不断提高正在推动市场扩张。 由于其高电子迁移率,GaN 衬底在电力电子领域的需求量很大。 这些 GaN 衬底应用有望加速 GaN 衬底市场的扩张,因为这些器件可降低传导和开关损耗并提高电子系统的效率。 另一方面,高昂的封装成本可能会阻碍 GaN 衬底市场的增长。
本报告解释了波特的五力模型、市场吸引力分析和价值链分析。 这些工具可帮助您清楚地了解您的行业结构并评估您在全球范围内的竞争吸引力。 此外,这些工具还能够全面评估全球GaN衬底市场的各个细分市场。 GaN 衬底行业的发展和趋势为这项研究提供了一种整体方法。
本部分按国家/地区分析细分市场,提供每个细分市场的详细数据,并协助确定目标受众和每种产品/服务的未来商机。
本节介绍了区域前景,重点关注北美、欧洲、亚太地区、拉丁美洲、中东和非洲 GaN 衬底市场当前和未来的需求。 此外,我们还关注所有主要地区各个应用领域的需求、估计和预测。
该研究报告还涵盖了市场主要参与者的综合概况和全球竞争格局的详细视图。 GaN 衬底市场的主要参与者是 Kyma Technologies Inc.、Kyocera Corporation、Mitsubishi Chemical Corporation、MTI Corporation、NGK Insulators Ltd.、Shin-Etsu Chemical Co., Ltd.、Shin-Etsu Chemical Co. Ltd.、SOITEC、Shin-Etsu Chemical Co., Ltd.、Sumitomo Chemical Co.、MTI CorporatiOn、Toyoda Gosei Co. Ltd., Ltd., Xiamen Weige Wang Advanced Materials Co., Ltd. 本节全面介绍了竞争格局,包括重大併购等各种战略发展,未来能力、合作伙伴关係、财务概览、合作、新产品开发和新产品发布。我在这里。
如果您有定制要求,请联繫我们。 我们的研究团队可以根据您的需要提供定制报告。
注意:公司简介中的财务细节和近期发展基于可用信息,可能不包括私营公司。
The global demand for GaN Substrate Market is presumed to reach the market size of nearly USD 646.97 MN by 2030 from USD 227.12 MN in 2022 with a CAGR of 13.98% under the study period of 2022 - 2030. Regarding volume, the market was calculated XX Million Units in 2022 and forecast to touch XX Million Units by 2030 with a CAGR of XX% during 2023-2030.
Gallium nitride (GaN) is a semiconductor employed in high-power, high-frequency uses. The GaN material is a thin layer produced on other materials such as sapphire, silicon, and silicon carbide. GaN Substrate is a semiconductor material with distinct benefits over other common semiconductor materials such as Silicon, Silicon Carbide, Aluminum, Sapphire, and others. GaN enhances the device's performance by removing structural flaws and improving vertical thermal and electrical conductivity.
Wider band gap, greater break-down voltage, larger critical electric field, and better thermal conductivity are some of the significant features for a sector to move from silicon technology to GaN substrate, expanding its market. Increased demand for GaN substrates in LED production, as well as increased acceptance of GaN industrial devices, are driving market expansion. Because of their high electron mobility, GaN Substrate is in high demand in the power electronics sector. As these devices aid in lowering conduction and switching losses and provide more efficiency in electronic systems, these GaN substrate applications are anticipated to accelerate the expansion of the GaN substrate market. On the contrary, high implementation costs are likely to hamper the growth of the GaN substrate market.
The report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of GaN substrate. The growth and trends of GaN Substrate Industry provide a holistic approach to this study.
This section of the GaN substrate market report provides detailed data on the segments by analyzing them at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the GaN Substrate market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the GaN substrate market include Kyma Technologies Inc., Kyocera Corporation, Mitsubishi Chemical Corporation, MTI Corporation, NGK Insulators Ltd., Shin-Etsu Chemical Co. Ltd., SOITEC, Sumitomo Chemical Co. Ltd., Toyoda Gosei Co. Ltd., Xiamen Powerway Advanced Material Co. Ltd. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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Note - in company profiling, financial details and recent development are subject to availability or might not be covered in case of private companies
Kindly note that the above listed are the basic tables and figures of the report and are not limited to the TOC.