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市场调查报告书

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1678799

全球氮化镓半导体市场 - 2025 至 2032 年

Global Gallium Nitride Semiconductor Market - 2025-2032

出版日期: 2025年03月11日 | 出版商:

DataM Intelligence | 英文 205 Pages | 商品交期: 最快1-2个工作天内

价格

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简介目录

2024 年全球氮化镓半导体市场规模达 8.322 亿美元，预计到 2032 年将达到 31.666 亿美元，2025 年至 2032 年的复合年增长率为 18.18%。

由于各行各业对高效能、高性能半导体解决方案的需求不断增加，氮化镓 (GaN) 半导体市场正在经历强劲成长。汽车产业，尤其是电动车市场，是另一个重要的成长动力。 GaN功率装置越来越多地用于电动车动力系统、车载充电器和逆变器，因为它们可以提高能源效率并缩短充电时间，这对电动车的性能至关重要。

例如，2023年的电动车销量将比2022年高出350万辆，较去年同期成长35%。这比五年前的 2018 年高出了六倍多。此外，再生能源领域正在利用 GaN 半导体来提高太阳能逆变器和风力发电系统的效率。基于GaN的逆变器可实现超过98%的电力转换效率，从而降低能源损失和营运成本。

例如，Transphorm Inc. 开发了 GaN 电源模组，使太阳能发电系统能够提供更高的能源产量，同时与传统系统相比占用的空间减少了 50%。随着各国推动采用再生能源以实现净零排放目标，该领域对 GaN 技术的需求预计将大幅上升。

受 5G 基础设施部署、电动车生产扩大、航太和国防应用的进步、消费性电子产品创新以及向再生能源系统的过渡等因素的推动，氮化镓 (GaN) 半导体市场有望持续成长。

动力学

投资激增推动市场

氮化镓（GaN）半导体市场正在经历强劲成长，主要得益于私营和公共部门投资的激增。与传统的硅基半导体相比，GaN半导体具有更高的效率、更快的开关速度和更好的热性能等优异的性能，因此越来越受到人们的关注。

例如，2025年，氮化镓（GaN）功率元件领域的领先创新者Cambridge GaN Devices（CGD）成功完成3,200万美元的C轮融资。这项投资由策略投资者领投，英国耐心资本 (British Patient Capital) 参与，并得到现有投资者 Parkwalk、BGF、剑桥创新资本 (CIC)、Foresight Group 和 IQ Capital 的支持。

此外，2023 年，GlobalFoundries 获得美国政府 3,500 万美元的联邦资助，用于加速其位于佛蒙特州埃塞克斯交界处的工厂生产 GF 差异化硅基氮化镓 (GaN) 半导体。这笔资金使 GF 更接近大规模生产 GaN 晶片，这种晶片具有处理高电压和高温的独特能力。从电信、汽车、航太到消费性电子等各领域的投资激增，大大推动了 GaN 半导体市场的发展。

快速充电解决方案需求不断成长

快速充电解决方案的需求不断增长是氮化镓 (GaN) 半导体市场的重要驱动力，因为与传统的硅基充电器相比，基于 GaN 的充电器具有卓越的性能、效率和紧凑性。例如，随着全球电动车市场的成长，对快速充电基础设施的需求也在增加。基于 GaN 的充电器可以处理更高的功率位准（例如 350 kW 或更高）而不会过热，使其成为高速电动车充电站的理想选择。这正在加速GaN技术在汽车领域的应用。

此外，资料中心对更快、更有效率电源管理的需求也推动了 GaN 半导体的采用。这些设备能够实现更高的功率密度和更快的开关速度，这对于管理云端运算和巨量资料日益增长的能源需求至关重要。

此外，无线充电的便利性，加上 GaN 半导体的效率，正在推动消费性电子和汽车市场的需求。例如，基于 GaN 的无线充电器可提供高达 15W 的功率，从而缩短智慧型手机和耳机等装置的充电时间。快速充电解决方案的需求不断增长是 GaN 半导体市场的主要驱动力，因为 GaN 技术在效率、尺寸和性能方面具有显着优势。

投资成本高

氮化镓（GaN）半导体的高生产成本限制了成本敏感型产业的采用，从而严重限制了市场成长。与传统的硅（Si）半导体不同，GaN装置需要昂贵的原料和复杂的製造工艺，导致整体成本上升。

例如，每 2 吋 GaN 晶片的价格为 1,900 美元至 2,500 美元，而同等尺寸的硅晶片的价格为 25 美元至 50 美元。此外，5G基地台和卫星通讯等高功率应用首选的碳化硅上氮化镓（GaN-on-SiC）晶圆价格更为昂贵，每片2吋晶圆成本高达3,000美元。

这种价格差异使得 GaN 技术在预算限制主导购买决策的产业中难以与硅竞争。由于原料昂贵、製造流程复杂以及基础设施投资庞大，GaN半导体的生产成本高，成为市场成长的主要限制因素。

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth due to the increasing demand for high-efficiency, high-performance semiconductor solutions across diverse industries. The automotive sector, especially the EV market, is another significant growth driver. GaN power devices are increasingly used in EV powertrains, onboard chargers, and inverters because they improve energy efficiency and reduce charging times, which are critical for EV performance.

For instance, electric car sales in 2023 were 3.5 million higher than in 2022, a 35% year-on-year increase. This is more than six times higher than in 2018, just 5 years earlier. Additionally, the renewable energy sector is leveraging GaN semiconductors to enhance the efficiency of solar inverters and wind power systems. GaN-based inverters can achieve power conversion efficiencies exceeding 98%, reducing energy losses and operational costs.

For instance, Transphorm Inc. has developed GaN power modules that enable solar power systems to deliver higher energy yields while occupying 50% less space compared to traditional systems. As countries push for renewable energy adoption to meet net-zero emission goals, the demand for GaN technology in this sector is expected to rise significantly.

The Gallium Nitride (GaN) semiconductor market is poised for sustained growth, driven by factors such as 5G infrastructure deployment, expanding EV production, advancements in aerospace and defense applications, consumer electronics innovation, and the transition to renewable energy systems.

Dynamics

Surging Investments Powering the Market

The Gallium Nitride (GaN) semiconductor market is experiencing robust growth, primarily driven by surging investments from both private and public sectors. GaN semiconductors are gaining traction due to their superior properties, such as higher efficiency, faster switching speeds, and better thermal performance compared to traditional silicon-based semiconductors.

For instance, in 2025, Cambridge GaN Devices (CGD), a leading innovator in gallium nitride (GaN) power devices, has successfully closed a US$ 32 million Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.

Additionally, in 2023, GlobalFoundries, had been awarded US$ 35 million in federal funding from the U.S. government to accelerate the manufacturing of GF's differentiated gallium nitride (GaN) on silicon semiconductors at its facility in Essex Junction, Vermont. This funding brings GF closer to large-scale production of GaN chips, which are unique in their ability to handle high voltages and temperatures. The surge in investments across various sectors-ranging from telecommunications, automotive, and aerospace to consumer electronics-is significantly propelling the GaN semiconductor market.

Increasing Demand for Fast Charging Solutions

The increasing demand for fast charging solutions is a significant driver of the Gallium Nitride (GaN) Semiconductor Market, as GaN-based chargers offer superior performance, efficiency, and compactness compared to traditional silicon-based chargers. For instance, as the global EV market grows, the demand for fast-charging infrastructure is increasing. GaN-based chargers can handle higher power levels (e.g., 350 kW or more) without overheating, making them ideal for high-speed EV charging stations. This is accelerating the adoption of GaN technology in the automotive sector.

Additionally, the need for faster and more efficient power management in data centers is driving the adoption of GaN semiconductors. These devices enable higher power density and faster switching speeds, which are critical for managing the growing energy demands of cloud computing and big data.

Moreover, the convenience of wireless charging, combined with the efficiency of GaN semiconductors, is driving demand in the consumer electronics and automotive markets. For example, GaN-based wireless chargers can deliver up to 15W of power, enabling faster charging times for devices like smartphones and earbuds. The increasing demand for fast-charging solutions is a major driver of the GaN Semiconductor Market, as GaN technology offers significant advantages in terms of efficiency, size, and performance.

High Investment Costs

The high production costs associated with Gallium Nitride (GaN) semiconductors significantly restrain market growth by limiting adoption across cost-sensitive industries. Unlike traditional silicon (Si) semiconductors, GaN devices require expensive raw materials and complex manufacturing processes, leading to elevated overall costs.

For instance, the price of a GaN wafer ranges from US$ 1,900 to US$ 2,500 per 2-inch wafer, compared to US$ 25 to US$ 50 for a silicon wafer of the same size. Moreover, GaN-on-silicon carbide (GaN-on-SiC) wafers, preferred for high-power applications like 5G base stations and satellite communications, are even more expensive, costing up to US$ 3,000 per 2-inch wafer.

This price disparity makes it challenging for GaN technology to compete with silicon in industries where budget constraints dominate purchasing decisions. The high production costs of GaN semiconductors, driven by expensive raw materials, complex fabrication processes, and significant infrastructure investments, act as a major restraint on market growth.

Segment Analysis

The global Gallium Nitride Semiconductor market is segmented based on type, application, technology, end-user and region.

GaN Power Devices Leading the Charge in Gallium Nitride Semiconductor Market

The GaN power devices segment is a key driver of growth in the Gallium Nitride (GaN) semiconductor market, primarily due to the increasing demand for high-efficiency, high-power density solutions across various industries. GaN power devices, such as transistors, diodes, and integrated circuits (ICs), offer significant advantages over traditional silicon-based devices, including faster switching speeds, higher breakdown voltage, and improved thermal performance.

In the automotive sector, the rising adoption of electric vehicles (EVs) is a major factor driving demand for GaN power devices. Companies like Tesla and Lucid Motors are incorporating GaN-based onboard chargers and powertrains, which enable faster charging and greater energy efficiency, ultimately improving driving range. For instance, GaN Systems reported that their GaN transistors can reduce energy losses by up to 40% compared to silicon-based solutions, enhancing overall EV performance.

Additionally, GaN devices contribute to lighter and more compact vehicle designs, addressing the automotive industry's focus on energy efficiency and performance optimization. Thus, GaN power devices segment drives the Gallium Nitride semiconductor market by enabling high-performance, energy-efficient solutions across multiple industries.

Geographical Penetration

Strong Government Support and Strategies by the Companies in North America

The North America region dominates the Gallium Nitride (GaN) semiconductor market due to strong technological advancements, robust investments, and the presence of leading industry players. The region's dominance is further bolstered by widespread adoption of GaN technology across key industries such as automotive, aerospace and defense, telecommunications, renewable energy, and consumer electronics.

For instance, in 2024, Texas Instruments, stated that it has begun production of gallium nitride (GaN)-based power semiconductors at its factory in Aizu, Japan. Coupled with its existing GaN manufacturing in Dallas, Texas, TI will now internally manufacture four times more GaN-based power semiconductors, as Aizu ramps to production.

Additionally, in 2024, ROHM Co., Ltd. (ROHM), stated that ROHM and TSMC had entered a strategic partnership on development and volume production of gallium nitride (GaN) power devices for electric vehicle applications. The partnership will integrate ROHM's device development technology with TSMC's industry-leading GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices. Therefore, North America's dominance in the GaN semiconductor market is driven by its advanced defense applications, leadership in 5G deployment, growing EV ecosystem, consumer electronics demand, and a thriving R&D environment.

Competitive Landscape

The major global players in the market include Wolfspeed Inc, Infineon Technologies, Qorvo, MACOM Technology Solutions, Texas Instruments, NXP Semiconductors, GaN Systems, Efficient Power Conversion (EPC), Navitas, Semiconductor, STMicroelectronics and among others.

Key Developments

In 2024, Infineon Technologies AG, partnered with Canada-based AWL-Electricity Inc., a pioneer in MHz resonant capacitive coupling power transfer technology. Infineon provides AWL-E with CoolGaN GS61008P allowing the development of advanced wireless power solutions, enabling new ways to solve power challenges in various industries.
In 2024, Renesas Electronics Corporation, had completed the acquisition of Transphorm, Inc, a global leader in gallium nitride (GaN) as of June 20, 2024. With the closing of the acquisition now completed, Renesas will immediately start offering GaN-based power products and related reference designs to meet the rising demand for wide bandgap (WBG) semiconductor products.

By Type

GaN Power Devices
GaN RF Devices
GaN Optoelectronic Devices
GaN Substrates
Others

By Application

Power Electronics
RF Electronics
Optoelectronics
Others

By Technology

Enhancement-Mode GaN (eGaN)
Depletion-Mode GaN (dGaN)

By End-User

Consumer Electronics
Automotive
Telecommunications
Aerospace & Defense
Healthcare
Energy & Utilities
Others

By Region

North America
- US
- Canada
- Mexico
Europe
- Germany
- UK
- France
- Italy
- Spain
- Rest of Europe
South America
- Brazil
- Argentina
- Rest of South America
Asia-Pacific
- China
- India
- Japan
- Australia
- Rest of Asia-Pacific
Middle East and Africa

Why Purchase the Report?

To visualize the global gallium nitride semiconductor market segmentation based on type, application, technology, end-user and region.
Identify commercial opportunities by analyzing trends and co-development.
Excel data sheet with numerous data points at the gallium nitride semiconductor market level for all segments.
PDF report consists of a comprehensive analysis after exhaustive qualitative interviews and an in-depth study.
Product mapping available as excel consisting of key products of all the major players.

The global Gallium Nitride Semiconductor market report would provide approximately 70 tables, 61 figures and 205 pages.

Target Audience 2024

Manufacturers/ Buyers
Industry Investors/Investment Bankers
Research Professionals
Emerging Companies

1. Methodology and Scope

1.1. Research Methodology
1.2. Research Objective and Scope of the Report

2. Definition and Overview

3. Executive Summary

3.1. Snippet by Type
3.2. Snippet by Application
3.3. Snippet by Technology
3.4. Snippet by End-User
3.5. Snippet by Region

4. Dynamics

4.1. Impacting Factors
- 4.1.1. Drivers
  - 4.1.1.1. Surging Investments Powering the Market
  - 4.1.1.2. Increasing Demand for Fast Charging Solutions
- 4.1.2. Restraints
  - 4.1.2.1. High Investment Costs
- 4.1.3. Opportunity
- 4.1.4. Impact Analysis

5. Industry Analysis

5.1. Porter's Five Force Analysis
5.2. Supply Chain Analysis
5.3. Pricing Analysis
5.4. Regulatory Analysis
5.5. Sustainable Analysis
5.6. DMI Opinion

6. By Type

6.1. Introduction
- 6.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 6.1.2. Market Attractiveness Index, By Type
6.2. GaN Power Devices*
- 6.2.1. Introduction
- 6.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
6.3. GaN RF Devices
6.4. GaN Optoelectronic Devices
6.5. GaN Substrates
6.6. Others

7. By Application

7.1. Introduction
- 7.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 7.1.2. Market Attractiveness Index, By Application
7.2. Power Electronics*
- 7.2.1. Introduction
- 7.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
7.3. RF Electronics
7.4. Optoelectronics
7.5. Others

8. By Technology

8.1. Introduction
- 8.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 8.1.2. Market Attractiveness Index, By Technology
8.2. Enhancement-Mode GaN (eGaN)*
- 8.2.1. Introduction
- 8.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
8.3. Depletion-Mode GaN (dGaN)

9. By End-User

9.1. Introduction
- 9.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 9.1.2. Market Attractiveness Index, By End-User
9.2. Consumer Electronics*
- 9.2.1. Introduction
- 9.2.2. Market Size Analysis and Y-o-Y Growth Analysis (%)
9.3. Automotive
9.4. Telecommunications
9.5. Aerospace & Defense
9.6. Healthcare
9.7. Energy & Utilities
9.8. Others

10. Sustainability Analysis

10.1. Environmental Analysis
10.2. Economic Analysis
10.3. Governance Analysis

11. By Region

11.1. Introduction
- 11.1.1. Market Size Analysis and Y-o-Y Growth Analysis (%), By Region
- 11.1.2. Market Attractiveness Index, By Region
11.2. North America
- 11.2.1. Introduction
- 11.2.2. Key Region-Specific Dynamics
- 11.2.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.2.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.2.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.2.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.2.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.2.7.1. US
  - 11.2.7.2. Canada
  - 11.2.7.3. Mexico
11.3. Europe
- 11.3.1. Introduction
- 11.3.2. Key Region-Specific Dynamics
- 11.3.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.3.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.3.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.3.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.3.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.3.7.1. Germany
  - 11.3.7.2. UK
  - 11.3.7.3. France
  - 11.3.7.4. Italy
  - 11.3.7.5. Spain
  - 11.3.7.6. Rest of Europe
11.4. South America
- 11.4.1. Introduction
- 11.4.2. Key Region-Specific Dynamics
- 11.4.3. Key Region-Specific Dynamics
- 11.4.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.4.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.4.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.4.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.4.8. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.4.8.1. Brazil
  - 11.4.8.2. Argentina
  - 11.4.8.3. Rest of South America
11.5. Asia-Pacific
- 11.5.1. Introduction
- 11.5.2. Key Region-Specific Dynamics
- 11.5.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.5.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.5.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.5.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User
- 11.5.7. Market Size Analysis and Y-o-Y Growth Analysis (%), By Country
  - 11.5.7.1. China
  - 11.5.7.2. India
  - 11.5.7.3. Japan
  - 11.5.7.4. Australia
  - 11.5.7.5. Rest of Asia-Pacific
11.6. Middle East and Africa
- 11.6.1. Introduction
- 11.6.2. Key Region-Specific Dynamics
- 11.6.3. Market Size Analysis and Y-o-Y Growth Analysis (%), By Type
- 11.6.4. Market Size Analysis and Y-o-Y Growth Analysis (%), By Application
- 11.6.5. Market Size Analysis and Y-o-Y Growth Analysis (%), By Technology
- 11.6.6. Market Size Analysis and Y-o-Y Growth Analysis (%), By End-User

12. Competitive Landscape

12.1. Competitive Scenario
12.2. Market Positioning/Share Analysis
12.3. Mergers and Acquisitions Analysis

13. Company Profiles

13.1. Wolfspeed Inc*
- 13.1.1. Company Overview
- 13.1.2. Product Portfolio and Description
- 13.1.3. Financial Overview
- 13.1.4. Key Developments
13.2. Infineon Technologies
13.3. Qorvo
13.4. MACOM Technology Solutions
13.5. Texas Instruments
13.6. NXP Semiconductors
13.7. GaN Systems
13.8. Efficient Power Conversion (EPC)
13.9. Navitas Semiconductor
13.10. STMicroelectronics

LIST NOT EXHAUSTIVE