2024 年至 2031 年氮化镓半导体装置市场（按地区）

氮化镓半导体装置市场评估，2024-2031

氮化镓半导体装置市场正在快速成长。与传统的硅基元件相比，GaN元件具有更优异的性能。 GaN 具有多种优势，包括提高效率、加快开关速度和增强功率处理能力。这些特性使其适用于广泛的应用，包括电力电子、射频（RF）设备和下一代电动车。预计2024年市场规模将超过232.4亿美元，2031年将达到约345.9亿美元。

5G 网路的推出、电气化程度的提高以及航空航天和国防领域的改进等趋势正在推动对 GaN 装置的需求。随着 GaN 技术的发展和製造技术变得更具成本效益，预计未来几年该市场将进一步成长。由于对具有成本效益和效率的氮化镓半导体装置的需求不断增加，预计 2024 年至 2031 年期间市场复合年增长率为 5.10%。

氮化镓半导体装置市场：定义/概述

氮化镓（GaN）半导体元件是用GaN材料製成的先进电子元件，GaN是一种具有高电子迁移率和饱和速度的直接带隙半导体。 GaN元件包括电力电子和光电子中使用的电晶体、二极体和LED。这些设备在几个重要方面优于典型的硅基半导体，包括卓越的功率效率、热导率以及在更高温度和频率下运作的能力。

GaN半导体装置由于其优异的性能特性，被广泛应用于各个行业。在通讯产业，它们对于 5G 网路中的射频放大器等高频应用至关重要。在电力电子领域，GaN电晶体和二极体用于电源、逆变器和电动车（EV）充电系统，可显着节省能源并减小电源模组的尺寸和重量。光电子产业正在受益于用于照明、显示器和资料储存的基于 GaN 的 LED 和雷射二极体。

GaN半导体装置的成长预测是乐观的，随着其不断进步和在各行业的应用日益广泛。随着对更好经济性和性能的需求不断增加，预计 GaN 装置将在电动车、再生能源发电系统和下一代无线通讯（6GY 及以后）的发展中发挥关键作用。 GaN技术的创新预计将实现更小、更快、更节能的电子产品。

对高性能电子产品的需求会推动氮化镓半导体装置市场的发展吗？

对高性能电子产品的需求可能会推动氮化镓（GaN）半导体装置市场的扩张。 GaN与传统的硅基元件相比具有显着的优势，包括效率更高、开关速度更快、功率处理能力更强。这些特性使 GaN 成为电力电子、射频放大器和 LED 照明等各种应用的理想选择。随着各行各业寻求更有效率、更小的解决方案，GaN技术越来越被视为可行的选择，从而带来全球采用和市场扩张。

GaN技术的不断发展使其更具吸引力。研究和开发工作促进了 GaN 材料特性、装置设计和製造过程的增强。这不仅提高了性能，而且降低了价格，使得 GaN 设备更加实惠。

优于硅的性能 GaN 装置比标准的硅基半导体具有多种优势。它提供了更高的效率、更快的切换速度和增强的功率处理能力。结果是，各种应用的性能都提高了提高，包括电力电子、射频设备甚至下一代电动车。

块状氮化镓（GAN）的高成本是否会影响氮化镓半导体装置市场的成长？

块状氮化镓（GaN）的高成本可能会影响GaN半导体装置市场的成长。儘管 GaN 具有提高效率和功率处理能力等性能优势，但其初始成本是超越传统硅基元件的一道障碍。这个成本因素可能会减缓大规模采用，特别是在价格敏感的产业和成本效益是关键的应用领域。

然而，目前旨在降低製造成本和提高製造效率的研究和开发活动可能会随着时间的推移减轻这一障碍并促进 GaN 技术得到更广泛的市场接受。

有限的规模经济可能会影响氮化镓（GaN）半导体装置市场的成长。 GaN技术，尤其是块体技术，在实现与硅等更成熟的半导体材料相当的规模经济方面面临障碍。这种限制将导致更高的生产成本，进而影响价格竞争力和技术在各种应用领域的传播。提高生产能力和改进製造流程的努力对于克服这一障碍并推动 GaN 半导体装置市场的成长轨迹至关重要。

目录

第 1 章简介

• 市场定义
• 市场区隔
• 研究方法

第 2 章执行摘要

• 主要发现 市场概况 市集亮点

第3章 市场概览

• 市场规模与成长潜力
• 市场趋势
• 市场推动因素
• 市场限制
• 市场机会
• 波特五力分析

第 4 章 氮化镓半导体元件市场（依元件类型）

• GaN功率半导体
• GaN 射频 (RF) 装置
• GaN光电器件

第5章 氮化镓半导体装置市场（依应用）

• 电源
• 射频设备
• 汽车
• 消费性电子产品
• 通讯设备
• 工业设备 航空航太和国防
• 医疗保健

第6章 氮化镓半导体装置市场（依最终用途产业划分）

• 沟通
• 汽车
• 家用电器 航空航太和国防
• 工业
• 医疗保健

第 7 章 区域分析

• 北美洲
• 美国
• 加拿大
• 墨西哥
• 欧洲
• 英国
• 德国
• 法国
• 义大利 亚太地区
• 中国
• 日本
• 印度
• 澳大利亚
• 拉丁美洲
• 巴西
• 阿根廷
• 智利
• 中东和非洲
• 南非
• 沙乌地阿拉伯
• 阿拉伯联合大公国

第 8 章 市场动态

• 市场推动因素
• 市场限制
• 市场机会
• COVID-19 市场影响

第 9 章 竞争格局

• 大型公司
• 市占率分析

第10章 公司简介

• Wolfspeed, Inc.（US）
• Qorvo, Inc.（US）
• MACOM Technology Solutions Holdings, Inc.（US）
• Infineon Technologies AG（Germany）
• Sumitomo Electric Industries, Ltd.（Japan）
• Navitas Semiconductor（US）
• Mitsubishi Electric（Japan）
• Epistar Corporation（Taiwan）
• Cree, Inc.（US）（acquired by Wolfspeed in 2021）
• Transphorm, Inc.（US）
• Efficient Power Conversion Corporation（EPC）（US）
• GaN Systems Inc.（US）
• Nichia Corporation（Japan）
• Texas Instruments Incorporated（US）
• Microchip Technology Incorporated（US）
• Panasonic Corporation（Japan）
• Analog Devices, Inc.（US）
• Visic Technologies, Inc.（US）
• Integra Technologies, Inc.（US）
• Exagan, Inc.（US）

第 11 章 市场展望与机会

• 新兴技术
• 未来市场趋势
• 投资机会

第 12 章附录

• 缩写列表
• 来源与参考文献

Gallium Nitride Semiconductor Device Market Valuation - 2024-2031

The market for gallium nitride semiconductor devices is growing rapidly. The GaN devices' higher performance when compared to classic silicon-based ones. GaN has several advantages, including increased efficiency, faster switching speeds, and improved power handling capabilities. These characteristics make them suitable for a wide range of applications, including power electronics, radio frequency (RF) devices, and future generations of electric vehicles. The market size surpass USD 23.24 Billion valued in 2024 to reach a valuation of aroundUSD 34.59 Billion by 2031.

Trends like as the deployment of 5G networks, increased electrification, and improvements in the aerospace and defense sectors are driving a significant demand for GaN devices. As GaN technology evolves and manufacturing techniques become more cost-effective, we may expect this market to grow more in the next years. The rising demand for cost-effective and efficient gallium nitride semiconductor device is enabling the market to grow at aCAGR of 5.10% from 2024 to 2031.

Gallium Nitride Semiconductor Device Market: Definition/ Overview

Gallium Nitride (GaN) semiconductor devices are advanced electronic components constructed from the GaN material, a direct bandgap semiconductor with high electron mobility and saturation velocity. GaN devices include transistors, diodes, and LEDs, which are utilized in power electronics and optoelectronics. These devices exceed typical silicon-based semiconductors in several important ways, including great power efficiency, thermal conductivity, and the ability to function at higher temperatures and frequencies.

GaN semiconductor devices are widely used in a variety of industries due to their outstanding performance characteristics. In the telecommunications industry, they are critical for high-frequency applications like RF amplifiers in 5G networks. In power electronics, GaN transistors and diodes are used in power supplies, inverters, and electric vehicle (EV) charging systems, resulting in significant energy savings and smaller, lighter power modules. The optoelectronics industry benefits from GaN-based LEDs and laser diodes, which are utilized in lighting, displays, and data storage.

The projected growth of GaN semiconductor devices looks optimistic, with continuing advances and increased adoption across a variety of industries. As the demand for greater economy and performance rises, GaN devices are projected to play an important part in the growth of electric vehicles, renewable energy systems, and next-generation wireless communications (6G and beyond). Innovations in GaN technology are projected to result in even smaller, quicker, and more energy-efficient electronics.

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Will Demand for High-Performance Electronics Drive the Gallium Nitride Semiconductor Device Market?

The desire for high-performance electronics is likely to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. GaN has substantial advantages over traditional silicon-based devices, including an increase in efficiency, faster switching speeds, and improved power handling. These properties make GaN ideal for a variety of applications, including power electronics, RF amplifiers, and LED illumination. As industries seek more efficient and smaller solutions, GaN technology is increasingly viewed as a viable choice, resulting in global adoption and market expansion.

Advances in GaN technology continuous developments in GaN technology make it more appealing. Research and development are resulting in enhanced GaN material properties, device design, and production processes. This not only improves performance but also lowers prices, making GaN devices more affordable.

Superior performance over silicon GaN devices has several advantages over standard silicon-based semiconductors. They have increased efficiency, faster switching rates, and better power-handling capacity. This results in improved performance in a variety of applications, including power electronics, RF devices, and even future generations of electric vehicles.

Will the High Cost of Bulk Gallium Nitride (GAN) Impact the Growth of the Gallium Nitride Semiconductor Device Market?

The high cost of bulk gallium nitride (GaN) could have an impact on the growth of the GaN semiconductor device market. While GaN provides improved performance benefits, such as increase in efficiency and power handling capabilities, its initial cost remains a barrier to traditional silicon-based devices. This cost aspect may slow down general adoption, particularly in price-sensitive industries and applications where cost-effectiveness is critical.

However, current research and development activities are aimed at lowering production costs and improving manufacturing efficiencies, which may alleviate this obstacle over time and drive broader market acceptance of GaN technology.

The limited economies of scale could have an impact on the growth of the Gallium Nitride (GaN) semiconductor device market. GaN technology, particularly in bulk form, presents hurdles in obtaining economies of scale comparable to more established semiconductor materials such as silicon. This constraint might result in higher production costs, affecting pricing competitiveness and widespread adoption across a variety of applications. Efforts to increase production capacity and improve manufacturing processes are critical to overcoming this obstacle and boosting the growth trajectory of the GaN semiconductor device market.

Category-Wise Acumens

How High-Power Density Accelerates the GaN Power Semiconductors for the Gallium Nitride Semiconductor Device Market?

The GaN power semiconductor category dominates the gallium nitride semiconductor device market. The market adoption of GaN power semiconductors is largely driven by their high-power density. GaN devices have higher power density than traditional silicon-based competitors, enabling smaller, lighter, and more efficient power electronics solutions. This advantage is especially useful in applications like electric vehicles, renewable energy systems, and telecommunications infrastructure, where reducing size and weight while boosting efficiency is crucial. As industries prioritize small and energy-efficient solutions, GaN semiconductors' inherent high power density makes them well-suited for significant expansion in these applications.

Superior efficiency is a primary driver of the Gallium Nitride (GaN) semiconductor device market. GaN devices are more efficient than typical silicon-based semiconductors, especially in power electronics and RF applications. This efficiency advantage translates into lower energy consumption, lower operating costs, and improved performance, making GaN an appealing option for enterprises seeking energy efficiency and sustainability. As demand for more efficient electronics rises across multiple industries, GaN's exceptional efficiency prepares it for significant market expansion.

The GaN Radio Frequency (RF) Device category is growing the quickest in the Gallium Nitride Semiconductor Device Market. This rapid increase is being driven by the introduction of next-generation wireless technology and advances in numerous RF applications.

Will Solar Inverters Power Supplies Segment Propel for the Gallium Nitride Semiconductor Device Market?

The gallium nitride semiconductor device market is currently led by the power supplies segment. This dominance is primarily driven by the growing demand for efficient power conversion across a variety of industries. Solar inverters are a significant market segment pushing the usage of Gallium Nitride (GaN) semiconductor devices.

GaN's ability to handle high frequencies and voltages more efficiently makes it ideal for usage in power supplies in solar inverters. These inverters require strong, high-performance components to convert DC electricity from solar panels into AC power for use in electrical networks or on-site consumption. GaN devices have benefits such as increased power density, smaller size and weight, and enhanced reliability, making them increasingly popular in the solar energy industry for improving overall system efficiency and performance.

Telecommunications is the fastest growing segment in the gallium nitride semiconductor device market. This spike is being driven by the adoption of next-generation wireless technologies and the growing need for greater data transfer speeds. The global deployment of 5G networks demands high-performance radio frequency (RF) components for base stations and user equipment. GaN technology is ideal for this application because of its high frequency and power handling capabilities.

Country/Region-wise Acumens

Will Government Support in the Asian Pacific Region Lead the Gallium Nitride Semiconductor Device Market?

The Asia-Pacific region currently dominates the gallium nitride semiconductor device market. Government support in Asia-Pacific is projected to fuel expansion in the Gallium Nitride (GaN) semiconductor device market. Many Asian countries, including Japan, South Korea, and China, have efforts and policies in place to promote semiconductor manufacturing and drive technological innovation.

These initiatives include sponsoring research and development, offering incentives to semiconductor companies, and encouraging the use of advanced technologies such as GaN for applications ranging from power electronics to telecommunications. Such support helps to strengthen infrastructure, lower production costs, and expedite market adoption, all of which contribute to the overall growth of the GaN semiconductor device market in the region and beyond.

The growing demand for consumer electronics in Asia-Pacific is likely to propel the Gallium Nitride (GaN) semiconductor device market. As consumer electronics makers strive to meet rising demand for smaller, more efficient, and high-performance products, GaN technology provides substantial benefits. GaN semiconductors enable the creation of tiny power adapters, fast-charging solutions, and high-frequency RF components, which are consistent with the trend toward portable, energy-efficient devices. The growing consumer electronics market in Asia-Pacific, fueled by rising disposable incomes and technical improvements, creates a good environment for GaN semiconductor adoption and market expansion.

Will Early Adoption of New Technologies Drive the Gallium Nitride Semiconductor Device Market in North America?

North America is expected to be the most rapidly increasing area in the gallium nitride semiconductor device market. Early adoption of new technologies is projected to drive the North American region's gallium nitride (GaN) semiconductor device market. North America, noted for its strong innovation ecosystem and early adoption of breakthrough technologies, is well-positioned to capitalize on GaN's advantages in various applications, including power electronics, RF devices, and LED lighting. The region's industries, such as automotive, telecommunications, and aerospace, place a premium on performance, efficiency, and reliability, all of which GaN excels in. As North American enterprises seek competitive advantages and technological leadership, using GaN semiconductor devices is expected to accelerate, adding to regional market growth.

North America's powerful ecosystem of research institutions, technological businesses, and venture capital promotes rapid semiconductor innovation and development. GaN's outstanding performance in power electronics, RF applications, and LED lighting is consistent with the region's focus on efficiency, performance, and sustainability. As automotive, telecommunications, and renewable energy industries seek cutting-edge solutions, GaN usage is likely to increase, aided by continued breakthroughs and investments in revolutionary semiconductor technologies throughout North America.

Competitive Landscape

The gallium nitride semiconductor device market is a dynamic and competitive space, characterized by a diverse range of players vying for market share. These players are on the run for solidifying their presence through the adoption of strategic plans such as collaborations, mergers, acquisitions, and political support.

The organizations are focusing on innovating their product line to serve the vast population in diverse regions. Some of the prominent players operating in the gallium nitride semiconductor device market include:

• Wolfspeed, Inc.
• Qorvo, Inc.
• MACOM Technology Solutions Holdings, Inc.
• Infineon Technologies AG
• Sumitomo Electric Industries, Ltd.
• Navitas Semiconductor
• Mitsubishi Electric
• Epistar Corporation
• Cree, Inc.
• Transphorm, Inc.
• Efficient Power Conversion Corporation (EPC)
• GaN Systems, Inc.
• Nichia Corporation
• Texas Instruments Incorporated
• Microchip Technology Incorporated
• Panasonic Corporation
• Analog Devices, Inc.
• Visic Technologies, Inc.
• Integra Technologies, Inc.
• Exagan, Inc.

Latest Developments

• In April 2024, Transphorm, Inc., a GaN power semiconductor provider, and Weltrend Semiconductor Inc. launched two new GaN System-in-Packages (SiPs). The latest additions, the WT7162RHUG24C and WT7162RHUG24B, combine Weltrend's high-frequency multi-mode (QR/Valley Switching) Flyback PWM controller with Transphorm's 480 mQ and 150 mQ SuperGaN FETs, respectively. This partnership expands on Weltrend's flagship GaN SiP from last year, creating the first SiP product line based on Transphorm's SuperGaN technology.
• In March 2024, Efficient Power Conversion Corporation announced EPC2361, a revolutionary gallium nitride (GaN) field-effect transistor (FET) with the market's lowest on-resistance at 100V, 1mQ. This invention is expected to double power density when compared to EPC's previous generation products. The EPC2361 has an excellent typical RDS (on) of only 2mQ) and is placed in a thermally improved QFN packaging with an exposed top, taking up a small 3mm x 5mm footprint.
• In January 2024, Transphorm Inc. launched two new 650V SuperGaN devices, packaged in a 4-lead TO-247 package (TO-247-4L). The new FETs, TP65H035G4YS and TP65H050G4YS, have on-resistances of 35mΩ and 50mΩ, respectively. They include a Kelvin-source terminal, allowing for flexibility switching with low energy losses.
• In November 2023, Cambridge GaN Devices (CGD) teamed with Cambridge University Technical Services (CUTS) in the UK and Chicony Power Technology in Taiwan to offer high-power-density adapters and data center power solutions using GaN technology.

TABLE OF CONTENTS

1. Introduction

• Market Definition
• Market Segmentation
• Research Methodology

2. Executive Summary

• Key Findings
• Market Overview
• Market Highlights

3. Market Overview

• Market Size and Growth Potential
• Market Trends
• Market Drivers
• Market Restraints
• Market Opportunities
• Porter's Five Forces Analysis

4. Gallium Nitride Semiconductor Device Market, By Device Type

• GaN Power Semiconductors
• GaN Radio Frequency (RF) Devices
• GaN Optoelectronic Devices

5. Gallium Nitride Semiconductor Device Market, By Application

• Power Supplies
• RF Devices
• Automotive
• Consumer Electronics
• Telecommunications
• Industrial
• Aerospace and Defense
• Healthcare

6. Gallium Nitride Semiconductor Device Market, By End-Use Industry

• Telecommunications
• Automotive
• Consumer Electronics
• Aerospace and Defense
• Industrial
• Healthcare

7. Regional Analysis

• North America
• United States
• Canada
• Mexico
• Europe
• United Kingdom
• Germany
• France
• Italy
• Asia-Pacific
• China
• Japan
• India
• Australia
• Latin America
• Brazil
• Argentina
• Chile
• Middle East and Africa
• South Africa
• Saudi Arabia
• UAE

8. Market Dynamics

• Market Drivers
• Market Restraints
• Market Opportunities
• Impact of COVID-19 on the Market

9. Competitive Landscape

• Key Players
• Market Share Analysis

10. Company Profiles

• Wolfspeed, Inc. (US)
• Qorvo, Inc. (US)
• MACOM Technology Solutions Holdings, Inc. (US)
• Infineon Technologies AG (Germany)
• Sumitomo Electric Industries, Ltd. (Japan)
• Navitas Semiconductor (US)
• Mitsubishi Electric (Japan)
• Epistar Corporation (Taiwan)
• Cree, Inc. (US) (acquired by Wolfspeed in 2021)
• Transphorm, Inc. (US)
• Efficient Power Conversion Corporation (EPC) (US)
• GaN Systems Inc. (US)
• Nichia Corporation (Japan)
• Texas Instruments Incorporated (US)
• Microchip Technology Incorporated (US)
• Panasonic Corporation (Japan)
• Analog Devices, Inc. (US)
• Visic Technologies, Inc. (US)
• Integra Technologies, Inc. (US)
• Exagan, Inc. (US)

11. Market Outlook and Opportunities

• Emerging Technologies
• Future Market Trends
• Investment Opportunities

12. Appendix

• List of Abbreviations
• Sources and References