封面
市场调查报告书
商品编码
1630572

WBG 半导体市场成长加速因素:2024 年

Growth Accelerators in the WBG Semiconductor Market, 2024

出版日期: | 出版商: Frost & Sullivan | 英文 58 Pages | 商品交期: 最快1-2个工作天内

价格
简介目录

基板、製程、测试和检测设备创新对于克服成本、产量比率和可靠性挑战至关重要

宽能带隙(WBG) 半导体主要由碳化硅 (SiC) 和氮化镓 (GaN) 基元件组成,是化合物半导体的子集。 WBG 半导体正处于商业化的早期阶段,预计在未来十年内将大幅成长。

因此,各种集成设备製造商(IDM)和无晶圆厂製造商正在采用 SiC 和 GaN 装置进行产品开发。这些製造商正在与汽车、工业、通讯和消费品等多个行业的客户合作,以利用这一高成长机会。也就是说,只有企业透过研究和创新努力克服与成本、产量比率和可靠性相关的挑战,WBG 半导体市场在未来十年的预期成长才能实现。

这项研究确定了宽频隙半导体市场面临的各种挑战,并评估了对市场成长影响最大的三大挑战。我们确定了 WBG 生态系统(在商业化的不同阶段)中的关键创新,这些创新克服了这些挑战并加速了 WBG 半导体装置的市场成长。创新着重于生态系统而不是设备本身。

本研究的重点是确定加速市场成长的槓桿,而不是市场表现或数量方面。对于详细的市场估计和预测,Frost & Sullivan 发布了有关化合物半导体 (KAA8)、功率半导体 (K9EC) 和 WBG 半导体 (K877) 的报告。

目录

战略问题

  • 为什么成长如此困难?
  • The Strategic Imperative 8(TM)
  • 宽能带隙(WBG)半导体产业三大策略挑战的影响

成长机会分析

  • 分析范围
  • 分割
  • 硅半导体和WBG半导体的区别
  • 碳化硅製造价值链
  • 氮化镓製造价值链
  • 成长指标
  • WBG 半导体:电力市场将成为未来十年的成长引擎
  • WBG半导体产业概况
  • WBG功率半导体现况:材料、应用、未来趋势(世界,2024年)
  • WBG 半导体领域的挑战
  • WBG 半导体市场中成本、产量比率和可靠性问题的重要性
  • 透过增加晶圆尺寸克服成本问题
  • Qromis:工程基板(QST)
  • 英飞凌:300mm 硅基氮化镓晶圆
  • KISAB:无基面位错 (BPD) SiC基板
  • DISCO Corporation:用于 GaN 和 SiC基板的 KABRA 工艺
  • AIXTRON SE:用于电源和射频应用的 G10-GaN 平台
  • SiC Innovation Alliance
  • 是德科技:4881HV 晶圆测试系统
  • Axus科技:CapstoneA CS200平台
  • 生长促进因子
  • 促生长因子分析
  • 成长抑制因素
  • 成长抑制因素分析

加速宽频隙市场成长的关键技术趋势

  • 从平面 SiC 电晶体结构过渡到沟槽 SiC 电晶体结构,以实现更高的功率密度和更低的导通电阻
  • WBG半导体功率模组封装趋势

成长机会领域

  • 成长机会 1:功率 GaN 的进步
  • 成长机会2:最终用户全行业能源效率法规
  • 成长机会3:下一代功率半导体材料的开发

附录与后续步骤

  • 成长机会的好处和影响
  • 下一步
  • 图表清单
  • 免责声明
简介目录
Product Code: KAD1-26

Innovations in Substrate, Process, Testing, and Inspection Equipment are Critical to Overcome Cost, Yield, and Reliability Challenges

Wide-bandgap (WBG) semiconductors-primarily consisting of silicon carbide (SiC) and gallium nitride (GaN)-based devices-are a sub-set of compound semiconductors. WBG semiconductors are at an early stage of commercialization and exhibit significant growth projections over the next 10 years.

For this reason, various integrated device manufacturers (IDMs) and fabless manufacturers are adopting SiC and GaN devices for product development. They are engaging with customers across verticals such as automotive, industrial, communications, and consumer to capitalize on this high-growth opportunity. That said, the projected growth in the WBG semiconductor market during the next 10 years can only happen if companies overcome the challenges associated with cost, yield, and reliability through research and innovation efforts.

This study identifies the spectrum of challenges the WBG semiconductor market faces and rates the top 3 challenges that impact market growth the most. It identifies the main innovations in the WBG ecosystem (which are in different stages of commercialization) that will overcome these challenges and accelerate market growth for WBG semiconductor devices. The innovations are focused more on the ecosystem than the devices themselves.

The study focuses less on market performance and quantitative aspects and more on identifying the levers that will accelerate market growth. For more information on market estimates and forecasts, Frost & Sullivan has published reports on compound semiconductors (KAA8), power semiconductors (K9EC), and WBG semiconductors (K877).

Table of Contents

Strategic Imperatives

  • Why is it Increasingly Difficult to Grow?
  • The Strategic Imperative 8™
  • The Impact of the Top 3 Strategic Imperatives on the Wide-bandgap (WBG) Semiconductor Industry

Growth Opportunity Analysis

  • Scope of Analysis
  • Segmentation
  • Differentiation Between Silicon and WBG Semiconductors
  • SiC Manufacturing Value Chain
  • GaN Manufacturing Value Chain
  • Growth Metrics
  • WBG Semiconductors: The Power Market Functioning as a Growth Engine Throughout the Decade
  • WBG Semiconductor Industry Overview
  • WBG Power Semiconductor Landscape: Materials, Applications, and Future Trends, Global, 2024
  • Challenges in the WBG Semiconductor Landscape
  • Significance of Cost, Yield, and Reliability Issues in the WBG Semiconductor Market
  • Overcoming Cost Challenges with Increased Wafer Size
  • Qromis: Engineered Substrate (QST)
  • Infineon: 300 mm GaN-on-Si Wafer
  • KISAB: Basal Plane Dislocation (BPD)-free SiC Substrates
  • DISCO Corporation: KABRA Process for GaN and SiC Substrates
  • AIXTRON SE: G10-GaN Platform for Power and RF Applications
  • SiC Innovation Alliance
  • Keysight Technologies: 4881HV Wafer Test System
  • Axus Technology: CapstoneA CS200 Platform
  • Growth Drivers
  • Growth Driver Analysis
  • Growth Restraints
  • Growth Restraint Analysis

Key Technology Trends Accelerating WBG Market Growth

  • Move from Planar to Trench SiC Transistor Structures for Higher Power Density and Lower Conduction Resistance
  • Packaging Trends in WBG Semiconductor Power Modules

Growth Opportunity Universe

  • Growth Opportunity 1: Advancements in the Power GaN Landscape
  • Growth Opportunity 2: Power Efficiency Legislations Across End-user Industries
  • Growth Opportunity 3: Developments in Next-generation Power Semiconductor Materials

Appendix & Next Steps

  • Benefits and Impacts of Growth Opportunities
  • Next Steps
  • List of Exhibits
  • Legal Disclaimer