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市场调查报告书
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1716615

3D NAND 快闪记忆体市场机会、成长动力、产业趋势分析及 2025 - 2034 年预测

3D NAND Flash Memory Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034

出版日期: | 出版商: Global Market Insights Inc. | 英文 178 Pages | 商品交期: 2-3个工作天内

价格
简介目录

2024 年全球 3D NAND 快闪记忆体市场规模达 218 亿美元,预计 2025 年至 2034 年期间的复合年增长率将达到 21.8%。这一强劲成长主要归因于资料储存解决方案需求的激增,而这得益于资料中心的激增和消费性电子产业的快速扩张。随着世界日益由数据驱动,对大容量、高速储存的需求正在加速成长,特别是随着云端运算、人工智慧 (AI) 和巨量资料分析等技术的广泛采用。超大规模和企业资料中心需要更快的资料存取速度和更高的储存容量来管理各行业产生的不断增长的资料量。此外,人工智慧与医疗保健、金融和汽车等各个领域的整合也增加了对可靠、高效的记忆体解决方案的需求。随着这些技术的发展,对 3D NAND 快闪记忆体等先进储存选项的需求将持续上升,为未来十年市场持续成长奠定基础。

3D NAND快闪记忆体市场 - IMG1

市场按单元类型细分,其中三级单元 (TLC) 内存部分在 2024 年占据 43.5% 的份额。 TLC 内存每个单元存储三位资料,与单级单元 (SLC) 和多级单元 (MLC) 内存相比,提供更高的存储容量和更低的成本,使其成为智慧型手机、平板电脑和固态硬碟 (SSD) 等消费性电子产品的理想选择。随着消费者偏好转向具有更大储存容量且价格更实惠的设备,基于 TLC 的 3D NAND 记忆体正成为寻求满足这些需求的製造商的首选。随着高效能设备普及率的不断提高,TLC记忆体的普及率预计将进一步上升,从而推动市场成长。

市场范围
起始年份 2024
预测年份 2025-2034
起始值 218亿美元
预测值 1494亿美元
复合年增长率 21.8%

从应用角度来看,3D NAND快闪记忆体市场分为几个领域,包括相机、笔记型电脑和个人电脑、智慧型手机和平板电脑。 2024 年,智慧型手机和平板电脑领域的产值将达到 12 亿美元。随着行动装置融入高解析度摄影机、4K 录影和资料密集型应用程式等先进功能,对大容量储存的需求显着增加。 3D NAND 快闪记忆体透过提供无缝的效能和可靠性来满足这些要求,使用户能够不间断地执行多任务、玩高清游戏和串流内容。消费者对功能丰富的设备的需求持续成长,推动了这一领域的成长。

2024年美国3D NAND快闪记忆体市值为50亿美元。随着云端运算和人工智慧技术的扩展,超大规模和企业资料中心的快速成长,对高速可靠储存设备的需求也随之增加。此外,多个产业对人工智慧应用的日益依赖加剧了对先进记忆体解决方案的需求,进一步推动了预测期内美国市场的成长。

目录

第一章:方法论与范围

第二章:执行摘要

第三章:行业洞察

  • 产业生态系统分析
    • 影响价值链的因素
    • 利润率分析
    • 中断
    • 未来展望
    • 製造商
    • 经销商
  • 供应商格局
  • 利润率分析
  • 重要新闻和倡议
  • 监管格局
  • 衝击力
    • 成长动力
      • 资料中心数量的增加
      • 消费性电子产品需求激增
      • 固态硬碟 (SSD) 日益普及
      • 5G技术的出现
      • 3D NAND 技术不断进步
    • 产业陷阱与挑战
      • 安全和资料隐私问题
      • 3D NAND快闪记忆体相关的技术挑战
  • 成长潜力分析
  • 波特的分析
  • PESTEL分析

第四章:竞争格局

  • 介绍
  • 公司市占率分析
  • 竞争定位矩阵
  • 战略展望矩阵

第五章:市场估计与预测:依类型,2021-2034

  • 主要趋势
  • 单层单元
  • 多层单元
  • 三层电池

第六章:市场估计与预测:按应用,2021-2034

  • 主要趋势
  • 相机
  • 笔记型电脑和桌上型电脑
  • 智慧型手机和平板电脑
  • 其他的

第七章:市场估计与预测:依最终用途,2021-2034

  • 主要趋势
  • 汽车
  • 消费性电子产品
  • 企业
  • 卫生保健
  • 其他的

第八章:市场估计与预测:按地区,2021-2034

  • 主要趋势
  • 北美洲
    • 我们
    • 加拿大
  • 欧洲
    • 英国
    • 德国
    • 法国
    • 义大利
    • 西班牙
    • 俄罗斯
  • 亚太地区
    • 中国
    • 印度
    • 日本
    • 韩国
    • 澳洲
  • 拉丁美洲
    • 巴西
    • 墨西哥
  • MEA
    • 南非
    • 沙乌地阿拉伯
    • 阿联酋

第九章:公司简介

  • ADATA Technology
  • GigaDevice Semiconductor (Beijing) Inc.
  • Goodram
  • Intel Corporation
  • Kingston Technology Corporation
  • Kioxia Corporation (formerly Toshiba Memory Corporation)
  • Lexar International
  • Macronix International
  • Micron Technology, Inc
  • Nanya Technology Corporation
  • Netac Technology
  • Netlist, Inc.
  • PNY Technologies, Inc.
  • Samsung Electronics
  • SanDisk (a division of Western Digital)
  • SK Hynix
  • Transcend Information
  • Western Digital Corporation
简介目录
Product Code: 9893

The Global 3D NAND Flash Memory Market generated USD 21.8 billion in 2024 and is expected to grow at a CAGR of 21.8% between 2025 and 2034. This robust growth is largely attributed to the surging demand for data storage solutions, driven by the proliferation of data centers and the rapid expansion of the consumer electronics sector. As the world becomes increasingly data-driven, the need for high-capacity, high-speed storage is accelerating, particularly with the widespread adoption of technologies such as cloud computing, artificial intelligence (AI), and big data analytics. Hyperscale and enterprise data centers require faster data access speeds and higher storage capacity to manage the ever-growing volumes of data generated across industries. Furthermore, the integration of AI into various sectors, including healthcare, finance, and automotive, has amplified the need for reliable and efficient memory solutions. As these technologies evolve, the demand for advanced storage options like 3D NAND flash memory will continue to rise, positioning the market for sustained growth over the next decade.

3D NAND Flash Memory Market - IMG1

The market is segmented by cell type, with the triple-level cell (TLC) memory segment holding a 43.5% share in 2024. TLC memory, which stores three bits of data per cell, offers higher storage capacity and lower costs compared to single-level cell (SLC) and multi-level cell (MLC) memory, making it an ideal choice for consumer electronics such as smartphones, tablets, and solid-state drives (SSDs). As consumer preferences shift toward devices with larger storage capacities at affordable prices, TLC-based 3D NAND memory is becoming the preferred option for manufacturers looking to meet these demands. With the increasing penetration of high-performance devices, the popularity of TLC memory is expected to rise further, fueling market growth.

Market Scope
Start Year2024
Forecast Year2025-2034
Start Value$21.8 Billion
Forecast Value$149.4 Billion
CAGR21.8%

In terms of applications, the 3D NAND flash memory market is divided into several segments, including cameras, laptops and PCs, and smartphones and tablets. The smartphones and tablets segment generated USD 1.2 billion in 2024. As mobile devices incorporate advanced features such as high-resolution cameras, 4K video recording, and data-intensive applications, the need for high-capacity storage has increased significantly. 3D NAND flash memory meets these requirements by providing seamless performance and reliability, enabling users to multitask, play high-definition games, and stream content without interruptions. The consistent increase in consumer demand for feature-rich devices is driving the growth of this segment.

The U.S. 3D NAND flash memory market was valued at USD 5 billion in 2024. The rapid growth of hyperscale and enterprise data centers fueled by the expansion of cloud computing and AI technologies has heightened the demand for high-speed and reliable storage devices. Additionally, the growing reliance on AI applications across multiple sectors has intensified the need for advanced memory solutions, further propelling market growth in the U.S. during the forecast period.

Table of Contents

Chapter 1 Methodology & Scope

  • 1.1 Market scope & definitions
  • 1.2 Base estimates & calculations
  • 1.3 Forecast calculations
  • 1.4 Data sources
    • 1.4.1 Primary
    • 1.4.2 Secondary
      • 1.4.2.1 Paid sources
      • 1.4.2.2 Public sources

Chapter 2 Executive Summary

  • 2.1 Industry synopsis, 2021-2034

Chapter 3 Industry Insights

  • 3.1 Industry ecosystem analysis
    • 3.1.1 Factor affecting the value chain
    • 3.1.2 Profit margin analysis
    • 3.1.3 Disruptions
    • 3.1.4 Future outlook
    • 3.1.5 Manufacturers
    • 3.1.6 Distributors
  • 3.2 Supplier landscape
  • 3.3 Profit margin analysis
  • 3.4 Key news & initiatives
  • 3.5 Regulatory landscape
  • 3.6 Impact forces
    • 3.6.1 Growth drivers
      • 3.6.1.1 Rise in number of data centers
      • 3.6.1.2 Surge in demand for consumer electronics
      • 3.6.1.3 Increasing proliferation of Solid State Drives (SSDs)
      • 3.6.1.4 Emergence of 5G technology
      • 3.6.1.5 Growing advancements in 3D NAND technology
    • 3.6.2 Industry pitfalls & challenges
      • 3.6.2.1 Security and data privacy concerns
      • 3.6.2.2 Technical challenges associated with 3D NAND flash memory
  • 3.7 Growth potential analysis
  • 3.8 Porter's analysis
  • 3.9 PESTEL analysis

Chapter 4 Competitive Landscape, 2024

  • 4.1 Introduction
  • 4.2 Company market share analysis
  • 4.3 Competitive positioning matrix
  • 4.4 Strategic outlook matrix

Chapter 5 Market Estimates & Forecast, By Type, 2021-2034 (USD Billion)

  • 5.1 Key trends
  • 5.2 Single-level cell
  • 5.3 Multi-level cell
  • 5.4 Triple-level cell

Chapter 6 Market Estimates & Forecast, By Application, 2021-2034 (USD Billion)

  • 6.1 Key trends
  • 6.2 Camera
  • 6.3 Laptops and PCs
  • 6.4 Smartphones & tablets
  • 6.5 Others

Chapter 7 Market Estimates & Forecast, By End Use, 2021-2034 (USD Billion)

  • 7.1 Key trends
  • 7.2 Automotive
  • 7.3 Consumer electronics
  • 7.4 Enterprise
  • 7.5 Healthcare
  • 7.6 Others

Chapter 8 Market Estimates & Forecast, By Region, 2021-2034 (USD Billion)

  • 8.1 Key trends
  • 8.2 North America
    • 8.2.1 U.S.
    • 8.2.2 Canada
  • 8.3 Europe
    • 8.3.1 UK
    • 8.3.2 Germany
    • 8.3.3 France
    • 8.3.4 Italy
    • 8.3.5 Spain
    • 8.3.6 Russia
  • 8.4 Asia Pacific
    • 8.4.1 China
    • 8.4.2 India
    • 8.4.3 Japan
    • 8.4.4 South Korea
    • 8.4.5 Australia
  • 8.5 Latin America
    • 8.5.1 Brazil
    • 8.5.2 Mexico
  • 8.6 MEA
    • 8.6.1 South Africa
    • 8.6.2 Saudi Arabia
    • 8.6.3 UAE

Chapter 9 Company Profiles

  • 9.1 ADATA Technology
  • 9.2 GigaDevice Semiconductor (Beijing) Inc.
  • 9.3 Goodram
  • 9.4 Intel Corporation
  • 9.5 Kingston Technology Corporation
  • 9.6 Kioxia Corporation (formerly Toshiba Memory Corporation)
  • 9.7 Lexar International
  • 9.8 Macronix International
  • 9.9 Micron Technology, Inc
  • 9.10 Nanya Technology Corporation
  • 9.11 Netac Technology
  • 9.12 Netlist, Inc.
  • 9.13 PNY Technologies, Inc.
  • 9.14 Samsung Electronics
  • 9.15 SanDisk (a division of Western Digital)
  • 9.16 SK Hynix
  • 9.17 Transcend Information
  • 9.18 Western Digital Corporation