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市场调查报告书
商品编码
1858838
氮化镓(GaN)功率晶片在电动车领域的市场机会、成长驱动因素、产业趋势分析及预测(2025-2034年)Gallium Nitride (GaN) Power Chips for EVs Market Opportunity, Growth Drivers, Industry Trend Analysis, and Forecast 2025 - 2034 |
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2024 年全球电动车用氮化镓 (GaN) 功率晶片市场价值为 2.97 亿美元,预计到 2034 年将以 15.5% 的复合年增长率增长至 15 亿美元。

这一强劲成长与汽车製造商日益大规模地整合高频、高密度转换架构的趋势相符。随着电动车的普及和充电基础设施的不断完善,车辆及其配套系统对高效能电力电子产品的整体需求正在加速成长。 2024年,全球电动车销量达1,700万辆,占新车总销量的20%以上。全球电动车保有量已成长至近5,800万辆,持续推动对更有效率电力转换解决方案的需求。基于氮化镓(GaN)的车载充电器因其在效率和尺寸缩小方面的显着优势而备受青睐。它们能够提高功率密度并减轻重量,从而提升电动车的续航里程和系统整合度。氮化镓技术的最新进展也支援高密度双向运行,这对于未来的车网互动(V2G)应用至关重要。从分立元件到整合式驱动器、开关和保护电路的氮化镓模组的转变,进一步提升了系统性能,降低了电磁干扰,并改善了散热管理。公私合作在加速这些宽禁带解决方案的商业化过程中发挥了关键作用。
| 市场范围 | |
|---|---|
| 起始年份 | 2024 |
| 预测年份 | 2025-2034 |
| 起始值 | 2.97亿美元 |
| 预测值 | 15亿美元 |
| 复合年增长率 | 15.5% |
2024年,横向GaN元件市场占有率达到70%,预计2034年将以16.1%的复合年增长率成长。由于这些装置适用于车用充电器、辅助系统和工作电压高达650V的DC-DC转换器,因此已成为电动车电力电子设备的核心。得益于硅基AlGaN/GaN HEMT架构,这些元件具有高电子迁移率和高击穿场强,与传统的硅基元件相比,在高电压下导通电阻显着降低。
2024年,电压范围在100V至650V的中压氮化镓(GaN)装置占据了67%的市场份额,预计2025年至2034年间将以16%的复合年增长率成长。此电压等级涵盖了众多电动车应用,包括车载充电器和直流-直流转换器,适用于目前的400V电池平台和未来的800V架构。在此电压范围内,氮化镓装置具有卓越的开关速度和效率,能够实现紧凑轻巧的电源转换系统,这对于高密度电动车应用至关重要。
2024年,中国用于电动车的氮化镓(GaN)功率晶片市场规模预计将达到7,340万美元。作为全球最大的电动车市场,中国约占全球电动车销量的三分之二,光是2023年就交付了超过800万辆。如此庞大的市场规模为GaN组件创造了巨大的潜在市场,因为每辆电动车和充电站都需要高性能的功率电子装置。此外,政府对新能源汽车的大力支持、国内半导体研发的蓬勃发展以及电动车基础设施的广泛部署,都进一步巩固了中国在电动车领域的领先地位,使其超越了印度、韩国和日本等其他区域竞争对手。
积极引领电动车氮化镓 (GaN) 功率晶片市场的关键企业包括 Transphorm、GaN Systems、英飞凌科技、罗姆半导体、Navitas、EPC、Power Integrations、Innoscience、意法半导体和德州仪器。为了巩固自身市场地位,GaN 功率晶片领域的领导企业正大力投资研发,以开发高性能、符合汽车级标准的 GaN 解决方案,从而支援更高的功率密度和更佳的热效率。许多厂商正从分立产品转向整合解决方案,例如采用共封装半桥模组,将驱动器、开关和保护功能整合于一体,以简化设计、最大限度地降低电磁干扰 (EMI) 并提高可靠性。此外,这些企业也积极寻求与汽车製造商和一级供应商建立策略合作伙伴关係,以加速在电动车平台的设计中胜出。
The Global Gallium Nitride (GaN) Power Chips for EVs Market was valued at USD 297 million in 2024 and is estimated to grow at a CAGR of 15.5% to reach USD 1.5 billion by 2034.

The robust expansion aligns with automakers increasingly integrating high-frequency, high-density conversion architectures at scale. As EV adoption grows alongside expanding charging infrastructure, the overall demand for efficient power electronics in both vehicles and supporting systems is accelerating. In 2024, global EV sales reached 17 million and accounted for over 20% of all new car sales. The global EV fleet has grown to nearly 58 million, fueling consistent demand for more efficient power conversion solutions. GaN-based onboard chargers are gaining traction due to their significant advantages in efficiency and size reduction. They enable increased power density and lower weight, improving EV range and system integration. Recent advancements in GaN technology also support high-density, bidirectional operations, a key feature for future vehicle-to-grid applications. The transition from discrete components to integrated GaN modules combining drivers, switches, and protection circuits has further enhanced system performance, reduced electromagnetic interference, and improved thermal management. Public-private efforts have been instrumental in accelerating the commercialization of these wide-bandgap solutions.
| Market Scope | |
|---|---|
| Start Year | 2024 |
| Forecast Year | 2025-2034 |
| Start Value | $297 Million |
| Forecast Value | $1.5 Billion |
| CAGR | 15.5% |
In 2024, the lateral GaN devices segment held a 70% share and is projected to grow at a CAGR of 16.1% through 2034. These devices have become the backbone of EV power electronics due to their suitability for onboard chargers, auxiliary systems, and DC-DC converters operating up to 650 V. Their high electron mobility and elevated breakdown field strength, enabled by AlGaN/GaN HEMT architecture on silicon, allow for significantly lower on-resistance at higher voltages when compared to traditional silicon-based components.
The medium-voltage GaN devices, ranging from 100 V to 650 V, held a 67% share in 2024 and are forecasted to grow at a CAGR of 16% between 2025 and 2034. This voltage class covers many EV applications, including onboard chargers and DC-DC converters in both current 400 V battery platforms and future 800 V architectures. Within this range, GaN devices deliver superior switching speeds and efficiency, enabling compact and lightweight power conversion systems critical for high-density EV applications.
China Gallium Nitride (GaN) Power Chips for EVs Market generated USD 73.4 million in 2024. As the largest EV market globally, China accounted for roughly two-thirds of global EV sales, delivering over 8 million units in 2023 alone. This massive scale has created a vast addressable market for GaN components, as every vehicle and charging site requires high-performance power electronics. Additionally, strong government support for NEVs, domestic semiconductor development, and widespread deployment of EV infrastructure continue to solidify China's leadership over other regional players such as India, South Korea, and Japan.
Key companies actively shaping the Gallium Nitride (GaN) Power Chips for EVs Market include Transphorm, GaN Systems, Infineon Technologies, ROHM Semiconductor, Navitas, EPC, Power Integrations, Innoscience, STMicroelectronics, and Texas Instruments. To enhance their positioning, leading companies in the GaN power chip sector are heavily investing in R&D to develop high-performance, automotive-qualified GaN solutions that support higher power densities and better thermal efficiency. Many players are shifting from discrete products to integrated solutions such as co-packaged half-bridge modules combining drivers, switches, and protection features to simplify design, minimize EMI, and improve reliability. Strategic partnerships with automakers and Tier 1 suppliers are also being pursued to accelerate design wins in EV platforms.