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市场调查报告书
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1833615

氮化镓 (GaN) 功率元件市场预测（至 2032 年）：按元件类型、电压范围、应用、最终用户和地区进行的全球分析

Gallium Nitride (GaN) Power Device Market Forecasts to 2032 - Global Analysis By Device Type (Power Discrete Devices, Power Integrated Circuits (ICs), and Power Modules), Voltage Range, Application, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3个工作天内

价格

根据 Stratistics MRC 的数据，全球氮化镓 (GaN) 功率元件市场预计在 2025 年达到 6.158 亿美元，到 2032 年将达到 72.052 亿美元，预测期内的复合年增长率为 42.1%。

氮化镓 (GaN) 功率元件是一种专注于半导体的装置，与硅基元件相比，其效率、开关速度和功率密度均更胜一筹。 GaN 装置在家用电子电器、汽车、可再生能源、资料中心和通讯基础设施领域发挥关键作用。快速充电、电动车和节能係统的需求日益增长，推动了其应用。 5G 网路以及航太和国防应用的进步进一步拓展了相关机会。研发和生产投入的不断增加，使 GaN 市场成为下一代电力电子的关键推动力。

根据 IEEE Spectrum 报告，GaN 装置的效率提高了 40%，并且正在被电动车、5G基地台和航太应用所采用。

电动车（EV）和可再生能源的成长

电动车 (EV) 的日益普及以及全球向可再生能源的转变是氮化镓 (GaN) 功率元件市场的关键驱动力。 GaN 的卓越效率和紧凑性使其成为电动车的理想选择，可增强车载充电器和逆变器的功率转换。此外，在可再生能源领域，GaN 的卓越性能也使太阳能逆变器和能源储存系统係统受益。电动车和可再生能源之间的这种协同效应将加速对 GaN 功率元件的需求，使其成为向永续能源解决方案转型的关键组件。

来自硅基技术的竞争

硅基元件技术成熟、经济高效，并广泛应用于各行各业。向GaN过渡需要对新的製造流程和基础设施进行大量投资。此外，GaN装置的初始成本较高，这可能会阻碍潜在的采用者，尤其是在价格敏感的市场。这种对硅技术的根深蒂固的偏好，对GaN功率元件的广泛应用构成了显着的挑战。

资料中心和通讯基础设施的扩展

资料中心和通讯基础设施的快速扩张为GaN功率元件带来了巨大的机会。这些领域需要高效的电源解决方案来管理不断增长的资料负载和能耗。 GaN能够处理高压和高频，同时最大限度地降低能量损耗，使其成为这些应用中电源和稳压器的理想选择。随着数位转型的加速，资料中心和通讯网路对高效电源解决方案的需求预计将推动GaN技术的普及。

影响投资的经济因素

通货膨胀、供应链中断和原材料成本波动等经济不确定性对GaN功率元件市场构成威胁。这些因素可能导致製造成本上升，并导致新技术投资延迟。此外，景气衰退可能会减少有潜力采用GaN装置的产业的资本支出。这些经济挑战可能会阻碍GaN功率元件市场的成长和发展，并影响市场扩张的前景。

COVID-19的影响：

新冠疫情最初扰乱了GaN功率元件市场，原因是全球供应链挑战和製造业停工。然而，对数位基础设施的依赖日益增加以及随之而来的数据消费成长，加速了对高效电源解决方案的需求。此外，疫情凸显了医疗保健和物流等各行业对节能技术的需求。随着各行各业适应新的营运规范，对能源效率数位化的日益重视，推动了GaN功率装置市场的復苏。

预计 200V-600V 段在预测期内将占最大份额

预计200V-600V电压段将在预测期内占据最大的市场份额。此段应用范围广泛，包括消费性电子产品、工业机械和电动车。此电压范围内的GaN元件具有更高的效率和热性能，非常适合高功率应用。 200V-600V电压范围内的GaN元件的多功能性和性能优势是预测其在市场上占据主导地位的关键因素。

预计电动车 (EV) 充电器部分在预测期内将实现最高的复合年增长率。

电动车 (EV) 充电器领域预计将在预测期内呈现最高成长率。 GaN 的高效率和紧凑特性在电动车充电基础设施中尤其有利，因为此类基础设施对空间和能源效率至关重要。随着电动车越来越普及，对采用 GaN 技术的先进充电解决方案的需求预计将推动该领域的快速扩张。

占比最高的地区：

预计北美将在预测期内占据最大的市场份额。该地区对技术创新的关注，加上对电动车和可再生能源的大量投资，正在推动对基于GaN的解决方案的需求。此外，北美主要半导体製造商和研究机构的存在将加速GaN技术的开发和应用，从而巩固该地区在市场上的主导地位。

复合年增长率最高的地区：

预计亚太地区在预测期内的复合年增长率最高。快速工业化、电动车的广泛普及以及对可再生能源基础设施的大量投资等因素都推动了这一成长。中国、日本和韩国等国家处于领先地位，半导体製造业的进步和对节能技术日益增长的需求推动了该地区GaN功率装置市场的扩张。

免费客製化服务：

此报告的订阅者可以使用以下免费自订选项之一：

  • 公司简介
    • 对最多三家其他市场公司进行全面分析
    • 主要企业的SWOT分析（最多3家公司）
  • 区域细分
    • 根据客户兴趣对主要国家进行的市场估计、预测和复合年增长率（註：基于可行性检查）
  • 竞争基准化分析
    • 根据产品系列、地理分布和策略联盟对主要企业基准化分析

目录

第一章执行摘要

第二章 前言

  • 概述
  • 相关利益者
  • 调查范围
  • 调查方法
    • 资料探勘
    • 数据分析
    • 数据检验
    • 研究途径
  • 研究材料
    • 主要研究资料
    • 次级研究资讯来源
    • 先决条件

第三章市场走势分析

  • 驱动程式
  • 抑制因素
  • 机会
  • 威胁
  • 应用分析
  • 最终用户分析
  • 新兴市场
  • COVID-19的影响

第四章 波特五力分析

  • 供应商的议价能力
  • 买方的议价能力
  • 替代品的威胁
  • 新进入者的威胁
  • 竞争对手之间的竞争

5. 全球氮化镓（GaN）功率元件市场（依元件类型）

  • 功率分离式元件元件
  • 功率积体电路（IC）
  • 电源模组

6. 全球氮化镓（GaN）功率元件市场（依电压范围）

  • 200V以下
  • 200V～600V
  • 600V以上

7. 全球氮化镓（GaN）功率元件市场（依应用）

  • 动力驱动
  • 电源
  • 马达驱动
  • 光伏（PV）逆变器
  • 电动车（EV）充电器
  • 资料中心和通讯基础设施

8. 全球氮化镓（GaN）功率元件市场（依最终用户）

  • 车
  • 家电
  • 工业自动化
  • 可再生能源
  • 通讯
  • 军事和航太

9. 全球氮化镓（GaN）功率元件市场（按地区）

  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 欧洲
    • 德国
    • 英国
    • 义大利
    • 法国
    • 西班牙
    • 其他欧洲国家
  • 亚太地区
    • 日本
    • 中国
    • 印度
    • 澳洲
    • 纽西兰
    • 韩国
    • 其他亚太地区
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 其他南美
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 卡达
    • 南非
    • 其他中东和非洲地区

第十章：重大进展

  • 协议、伙伴关係、合作和合资企业
  • 收购与合併
  • 新产品发布
  • 业务扩展
  • 其他关键策略

第十一章 公司概况

  • Wolfspeed, Inc.
  • Qorvo, Inc.
  • MACOM Technology Solutions Holdings, Inc.
  • Infineon Technologies AG
  • Sumitomo Electric Industries, Ltd.
  • Navitas Semiconductor
  • Mitsubishi Electric Corporation
  • Efficient Power Conversion Corporation（EPC）
  • GaN Systems
  • NXP Semiconductors NV
  • Texas Instruments Incorporated
  • Toshiba Electronic Devices & Storage Corporation
  • ROHM Co., Ltd.
  • Analog Devices, Inc.
  • ON Semiconductor Corporation
  • Panasonic Corporation
  • Fujitsu Limited
  • Taiwan Semiconductor Manufacturing Company（TSMC）
  • Nexperia Holding BV
  • Innoscience
Product Code: SMRC31448

According to Stratistics MRC, the Global Gallium Nitride (GaN) Power Device Market is accounted for $615.8 million in 2025 and is expected to reach $7205.2 million by 2032 growing at a CAGR of 42.1% during the forecast period. The Gallium Nitride (GaN) Power Device focuses on semiconductors that provide superior efficiency, switching speed, and power density compared to silicon-based devices. GaN devices are critical in consumer electronics, automotive, renewable energy, data centers, and telecom infrastructure. Growing demand for fast charging, electric vehicles, and energy-efficient systems is fueling adoption. Advancements in 5G networks, aerospace, and defense applications further expand opportunities. With increasing investments in R&D and production, the GaN market is positioned as a key enabler of next-generation power electronics.

According to IEEE Spectrum, GaN devices offer 40% higher efficiency and are being adopted in EVs, 5G base stations, and aerospace applications.

Market Dynamics:

Driver:

Growth in Electric Vehicles (EVs) and Renewable Energy

The surge in electric vehicle (EV) adoption and the global shift towards renewable energy are pivotal drivers for the Gallium Nitride (GaN) power device market. GaN's superior efficiency and compactness make it ideal for EVs, enhancing power conversion in onboard chargers and inverters. Additionally, the renewable energy sector benefits from GaN's performance in solar inverters and energy storage systems. This synergy between EVs and renewable energy accelerates the demand for GaN power devices, positioning them as essential components in the transition to sustainable energy solutions.

Restraint:

Competition from Silicon-Based Technologies

Silicon components are well-established, cost-effective, and widely adopted across various industries. The transition to GaN requires substantial investment in new manufacturing processes and infrastructure. Moreover, the higher initial cost of GaN devices can deter potential adopters, especially in price-sensitive markets. This entrenched preference for silicon technologies presents a notable challenge to the widespread adoption of GaN power devices.

Opportunity:

Expansion in Data Centers and Telecom Infrastructure

The rapid expansion of data centers and telecom infrastructure presents a significant opportunity for GaN power devices. These sectors demand high-efficiency power solutions to manage increasing data loads and energy consumption. GaN's ability to handle high voltages and frequencies with minimal energy loss makes it an attractive option for power supplies and voltage regulators in these applications. As digital transformation accelerates, the need for efficient power solutions in data centers and telecom networks is expected to drive the adoption of GaN technology.

Threat:

Economic Factors Affecting Investment

Economic uncertainties, such as inflation, supply chain disruptions, and fluctuating raw material costs, pose threats to the GaN power device market. These factors can lead to increased production costs and delayed investments in new technologies. Additionally, economic downturns may result in reduced capital expenditure from industries that are potential adopters of GaN devices. Such economic challenges can hinder the growth and development of the GaN power device market, affecting its expansion prospects.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the GaN power device market due to global supply chain challenges and manufacturing halts. However, the increased reliance on digital infrastructure and the subsequent rise in data consumption accelerated the demand for efficient power solutions. Moreover, the pandemic highlighted the need for energy-efficient technologies in various sectors, including healthcare and logistics. As industries adapted to new operational norms, the GaN power device market witnessed resurgence, driven by the growing emphasis on energy efficiency and digitalization.

The 200V-600V segment is expected to be the largest during the forecast period

The 200V-600V segment is expected to account for the largest market share during the forecast period. This segment caters to a wide array of applications, including consumer electronics, industrial machinery, and electric vehicles. GaN devices within this voltage range offer enhanced efficiency and thermal performance, making them suitable for high-power applications. The versatility and performance benefits of GaN devices in the 200V-600V range are key factors contributing to their projected dominance in the market.

The electric vehicle (EV) chargers segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the electric vehicle (EV) chargers segment is predicted to witness the highest growth rate. GaN's ability to deliver high efficiency and compactness is particularly beneficial in EV charging infrastructure, where space and energy efficiency are critical. As the adoption of electric vehicles continues to rise, the demand for advanced charging solutions that incorporate GaN technology is expected to grow, driving the segment's rapid expansion.

Region with largest share:

During the forecast period, the North America region is expected to hold the largest market share. The region's strong emphasis on technological innovation, coupled with substantial investments in electric vehicles and renewable energy, fuels the demand for GaN-based solutions. Additionally, the presence of leading semiconductor manufacturers and research institutions in North America accelerates the development and adoption of GaN technologies, reinforcing the region's dominant position in the market.

Region with highest CAGR:

Over the forecast period, the Asia Pacific region is anticipated to exhibit the highest CAGR. Factors such as rapid industrialization, increasing adoption of electric vehicles, and significant investments in renewable energy infrastructure contribute to this growth. Countries like China, Japan, and South Korea are at the forefront, with advancements in semiconductor manufacturing and a growing demand for energy-efficient technologies driving the region's expansion in the GaN power device market.

Key players in the market

Some of the key players in Gallium Nitride (GaN) Power Device Market include Wolfspeed, Inc., Qorvo, Inc., MACOM Technology Solutions Holdings, Inc., Infineon Technologies AG, Sumitomo Electric Industries, Ltd., Navitas Semiconductor, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation (EPC), GaN Systems, NXP Semiconductors N.V., Texas Instruments Incorporated, Toshiba Electronic Devices & Storage Corporation, ROHM Co., Ltd., Analog Devices, Inc., ON Semiconductor Corporation, Panasonic Corporation, Fujitsu Limited, Taiwan Semiconductor Manufacturing Company (TSMC), Nexperia Holding B.V., and Innoscience.

Key Developments:

In September 2025, Wolfspeed, Inc. has officially introduced its 200mm silicon carbide (SiC) materials products to the commercial market, marking a pivotal advancement in its ongoing effort to accelerate the industry's shift from traditional silicon to SiC technologies. ollowing an initial phase in which the company made 200mm SiC available to select customers, the strong feedback and clear benefits prompted Wolfspeed to move forward with a full-scale release.

In June 2025, Qorvo(R) a leading global provider of connectivity and power solutions, is expanding its SATCOM portfolio with the launch of a new K-band power amplifier (PA) designed to improve the performance and integration of Low Earth Orbit (LEO) satellites. Developed to meet the evolving demands of next-generation payloads, Qorvo's newest PA further expands its proven GaN-on-SiC SATCOM portfolio, giving system designers a more efficient, compact and scalable option for space-based payloads.

In May 2025, Infineon Technologies AG announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon's own foundry, based on its proven CoolGan(TM) technology. Designed to operate in harsh space environments, the company's new product is the first in-house manufactured GaN transistor to earn the highest quality certification of reliability assigned by the United States Defense Logistics Agency (DLA) to the Joint Army Navy Space (JANS) Specification MIL-PRF-19500/794.

Device Types Covered:

  • Power Discrete Devices
  • Power Integrated Circuits (ICs)
  • Power Modules

Voltage Ranges Covered:

  • Below 200V
  • 200V-600V
  • Above 600V

Applications Covered:

  • Power Drives
  • Power Supplies
  • Motor Drives
  • Photovoltaic (PV) Inverters
  • Electric Vehicle (EV) Chargers
  • Data Centers and Telecom Infrastructure

End Users Covered:

  • Automotive
  • Consumer Electronics
  • Industrial Automation
  • Renewable Energy
  • Telecommunications
  • Military and Aerospace

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Application Analysis
  • 3.7 End User Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Gallium Nitride (GaN) Power Device Market, By Device Type

  • 5.1 Introduction
  • 5.2 Power Discrete Devices
  • 5.3 Power Integrated Circuits (ICs)
  • 5.4 Power Modules

6 Global Gallium Nitride (GaN) Power Device Market, By Voltage Range

  • 6.1 Introduction
  • 6.2 Below 200V
  • 6.3 200V-600V
  • 6.4 Above 600V

7 Global Gallium Nitride (GaN) Power Device Market, By Application

  • 7.1 Introduction
  • 7.2 Power Drives
  • 7.3 Power Supplies
  • 7.4 Motor Drives
  • 7.5 Photovoltaic (PV) Inverters
  • 7.6 Electric Vehicle (EV) Chargers
  • 7.7 Data Centers and Telecom Infrastructure

8 Global Gallium Nitride (GaN) Power Device Market, By End User

  • 8.1 Introduction
  • 8.2 Automotive
  • 8.3 Consumer Electronics
  • 8.4 Industrial Automation
  • 8.5 Renewable Energy
  • 8.6 Telecommunications
  • 8.7 Military and Aerospace

9 Global Gallium Nitride (GaN) Power Device Market, By Geography

  • 9.1 Introduction
  • 9.2 North America
    • 9.2.1 US
    • 9.2.2 Canada
    • 9.2.3 Mexico
  • 9.3 Europe
    • 9.3.1 Germany
    • 9.3.2 UK
    • 9.3.3 Italy
    • 9.3.4 France
    • 9.3.5 Spain
    • 9.3.6 Rest of Europe
  • 9.4 Asia Pacific
    • 9.4.1 Japan
    • 9.4.2 China
    • 9.4.3 India
    • 9.4.4 Australia
    • 9.4.5 New Zealand
    • 9.4.6 South Korea
    • 9.4.7 Rest of Asia Pacific
  • 9.5 South America
    • 9.5.1 Argentina
    • 9.5.2 Brazil
    • 9.5.3 Chile
    • 9.5.4 Rest of South America
  • 9.6 Middle East & Africa
    • 9.6.1 Saudi Arabia
    • 9.6.2 UAE
    • 9.6.3 Qatar
    • 9.6.4 South Africa
    • 9.6.5 Rest of Middle East & Africa

10 Key Developments

  • 10.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 10.2 Acquisitions & Mergers
  • 10.3 New Product Launch
  • 10.4 Expansions
  • 10.5 Other Key Strategies

11 Company Profiling

  • 11.1 Wolfspeed, Inc.
  • 11.2 Qorvo, Inc.
  • 11.3 MACOM Technology Solutions Holdings, Inc.
  • 11.4 Infineon Technologies AG
  • 11.5 Sumitomo Electric Industries, Ltd.
  • 11.6 Navitas Semiconductor
  • 11.7 Mitsubishi Electric Corporation
  • 11.8 Efficient Power Conversion Corporation (EPC)
  • 11.9 GaN Systems
  • 11.10 NXP Semiconductors N.V.
  • 11.11 Texas Instruments Incorporated
  • 11.12 Toshiba Electronic Devices & Storage Corporation
  • 11.13 ROHM Co., Ltd.
  • 11.14 Analog Devices, Inc.
  • 11.15 ON Semiconductor Corporation
  • 11.16 Panasonic Corporation
  • 11.17 Fujitsu Limited
  • 11.18 Taiwan Semiconductor Manufacturing Company (TSMC)
  • 11.19 Nexperia Holding B.V.
  • 11.20 Innoscience

List of Tables

  • Table 1 Global Gallium Nitride (GaN) Power Device Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Gallium Nitride (GaN) Power Device Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 3 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Discrete Devices (2024-2032) ($MN)
  • Table 4 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Integrated Circuits (ICs) (2024-2032) ($MN)
  • Table 5 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Modules (2024-2032) ($MN)
  • Table 6 Global Gallium Nitride (GaN) Power Device Market Outlook, By Voltage Range (2024-2032) ($MN)
  • Table 7 Global Gallium Nitride (GaN) Power Device Market Outlook, By Below 200V (2024-2032) ($MN)
  • Table 8 Global Gallium Nitride (GaN) Power Device Market Outlook, By 200V-600V (2024-2032) ($MN)
  • Table 9 Global Gallium Nitride (GaN) Power Device Market Outlook, By Above 600V (2024-2032) ($MN)
  • Table 10 Global Gallium Nitride (GaN) Power Device Market Outlook, By Application (2024-2032) ($MN)
  • Table 11 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Drives (2024-2032) ($MN)
  • Table 12 Global Gallium Nitride (GaN) Power Device Market Outlook, By Power Supplies (2024-2032) ($MN)
  • Table 13 Global Gallium Nitride (GaN) Power Device Market Outlook, By Motor Drives (2024-2032) ($MN)
  • Table 14 Global Gallium Nitride (GaN) Power Device Market Outlook, By Photovoltaic (PV) Inverters (2024-2032) ($MN)
  • Table 15 Global Gallium Nitride (GaN) Power Device Market Outlook, By Electric Vehicle (EV) Chargers (2024-2032) ($MN)
  • Table 16 Global Gallium Nitride (GaN) Power Device Market Outlook, By Data Centers and Telecom Infrastructure (2024-2032) ($MN)
  • Table 17 Global Gallium Nitride (GaN) Power Device Market Outlook, By End User (2024-2032) ($MN)
  • Table 18 Global Gallium Nitride (GaN) Power Device Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 19 Global Gallium Nitride (GaN) Power Device Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 20 Global Gallium Nitride (GaN) Power Device Market Outlook, By Industrial Automation (2024-2032) ($MN)
  • Table 21 Global Gallium Nitride (GaN) Power Device Market Outlook, By Renewable Energy (2024-2032) ($MN)
  • Table 22 Global Gallium Nitride (GaN) Power Device Market Outlook, By Telecommunications (2024-2032) ($MN)
  • Table 23 Global Gallium Nitride (GaN) Power Device Market Outlook, By Military and Aerospace (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.