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市场调查报告书
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1758850

全球砷化镓(GaAs)射频元件市场

Gallium Arsenide (GaAs) RF Devices

出版日期: | 出版商: Global Industry Analysts, Inc. | 英文 155 Pages | 商品交期: 最快1-2个工作天内

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简介目录

预计到 2030 年,全球砷化镓 (GaAs) 射频元件市场规模将达到 9.094 亿美元

全球砷化镓 (GaAs) 射频元件市场规模预计在 2024 年达到 5.956 亿美元,预计到 2030 年将达到 9.094 亿美元,2024 年至 2030 年的复合年增长率为 7.3%。滤波器是本报告分析的细分市场之一,预计其复合年增长率为 7.7%,到分析期结束时将达到 3.773 亿美元。功率放大器细分市场在分析期间的复合年增长率预计为 5.3%。

美国市场规模将达 1.566 亿美元;中国市场预期复合年增长率为 7.1%

2024年,美国砷化镓 (GaAs) 射频元件市场规模估计为1.566亿美元。预计到2030年,作为世界第二大经济体的中国市场规模将达到1.456亿美元,在2024-2030年的分析期内,复合年增长率为7.1%。其他值得关注的区域市场包括日本和加拿大,预计在分析期间内,这两个市场的复合年增长率分别为6.8%和6.1%。在欧洲,预计德国市场的复合年增长率为5.8%。

全球砷化镓(GaAs)射频元件市场-主要趋势与驱动因素摘要

为什么 GaAs RF 装置对于现代高频通讯至关重要?

砷化镓 (GaAs) 射频元件正逐渐成为全球通讯基础设施中的基本组件,可实现现代无线系统所需的高频、低杂讯和高效性能。 GaAs 具有出色的电子迁移率和直接带隙,使其性能优于硅,尤其是在功率效率和讯号保真度至关重要的射频 (RF) 和微波应用中。这些特性使功率放大器、低杂讯放大器、开关和搅拌机等 GaAs 射频元件特别适用于行动通讯、航太和国防、卫星通讯、雷达系统和无线宽频等关键领域。在家用电子电器中,智慧型手机严重依赖 GaAs 射频前端模组来支援多频段 4G 和 5G 连接,同时延长电池寿命并保持紧凑的外形。 GaAs 元件还提供出色的线性度和增益,使其能够支援高资料速率应用所需的进阶调变方案。随着世界转向使用越来越高的频段,例如用于5G及更高频段的毫米波频率,硅的限制日益凸显,进一步巩固了GaAs在先进射频电路设计中的重要性。随着人们越来越重视跨装置和网路的可靠、高吞吐量无线通讯,GaAs射频元件已成为高效能连接的重要推动因素。

工业应用如何推动GaAs RF元件的成长与多样化?

无线支援应用领域不断扩大,推动各行各业采用 GaAs RF 装置。在行动通讯,GaAs 功率放大器和开关广泛用于用户设备和基地台,以在多个频段(包括 sub-6 GHz 和毫米波)提供强大的讯号发送和接收。国防和航太长期以来一直依赖 GaAs RF 技术用于雷达、电子战和安全通讯系统,这些系统要求高功率、坚固耐用和耐辐射。在卫星通讯,GaAs RF 组件用于中继器和终端,为广播、导航和全球互联网服务提供高频链路。此外,汽车行业正在将 GaAs RF 装置应用于车对一切 (V2X)通讯和高级驾驶辅助系统 (ADAS) 等新应用,可靠的高频性能对于安全和自主功能至关重要。工业物联网 (IIoT) 和智慧基础设施也受益于 GaAs RF 装置在智慧计量、遥感探测和机器对机器 (M2M)通讯等应用中的应用。这些多样化的使用案例不仅推动了市场需求,而且还鼓励製造商开发客製化的、特定应用的 GaAs RF 解决方案,以满足独特的环境和技术规格。

哪些技术创新正在提高GaAs RF元件的性能和整合度?

材料工程、电路设计和半导体製程的突破显着提高了 GaAs RF 设备的性能、整合度和可製造性,使它们能够满足下一代通讯系统日益严格的要求。金属有机化学气相沉积 (MOCVD) 和分子束外延 (MBE) 等外延生长技术的改进,正在生产出更高纯度的 GaAs 晶圆,并能精确控制掺杂分布和异质结形成,这对于製造高效晶体管(如 HBT(异质结双极电晶体)和 pHEMT(伪高电子移动性电晶体)至关重要。先进的微影术和蚀刻製程可实现更小的几何尺寸和更高的整合密度,从而产生紧凑、高性能的单片微波积体电路 (MMIC)。这些 MMIC 采用 GaAs基板製造,将放大、滤波和开关等多种 RF 功能整合到单一晶片上,从而降低了功耗和物理占用空间。温度控管领域的创新,例如先进的封装和散热技术,正在提高GaAs射频元件在高功率、高温环境下的可靠性。此外,与GaN和SiGe等互补技术的混合整合,可以实现多功能模组,结合不同材料的优势,从而优化更宽频宽的性能。借助针对射频模拟和布局进行最佳化的电子设计自动化(EDA)工具的支持,工程师现在可以更有效率地设计、测试和迭代GaAs射频电路,从而加速尖端无线系统的开发。

哪些市场力量推动GaAs射频元件产业的扩张?

在宏观经济趋势、技术要求和不断变化的消费者期望等因素的共同推动下,全球 GaAs 射频元件市场正经历强劲成长。其中最突出的驱动因素之一是 5G 网路的快速部署和密集化,这需要更高频率和更有效率的射频元件,以支援更高的频宽、更低的延迟和增强的设备间通讯。串流媒体、游戏和即时通讯推动的行动数据消费激增,给通讯业者带来了投资高效能射频硬体的额外压力。同时,从智慧家庭到工业自动化的物联网生态系统的扩展,正在推动对小型、低功耗射频模组的需求,而这正是 GaAs 元件的优势领域。领先晶片製造商的战略投资以及政府支持的旨在加强国内半导体能力的倡议,尤其是在美国、中国、韩国和欧盟,正在进一步刺激 GaAs 射频供应链。电子设备向更小、功能更多的方向发展也推动了对整合式射频解决方案的需求,这些解决方案能够在性能、空间和功率效率之间取得平衡。同时,持续的地缘政治担忧正促使各国和各企业寻求多元化采购,并投资于垂直整合的砷化镓 (GaAs) 製造。随着 6G、卫星互联网、无人系统和国防电子等领域新应用的涌现,对高效能射频解决方案的需求将持续成长。砷化镓射频装置凭藉其独特的优势,能够应对高频工作的技术挑战,使其在下一个全球互联时代仍将保持关键技术支柱的地位。

部分

设备(滤波器、功率放大器、低杂讯放大器、开关、其他设备)、应用(消费性设备、汽车、通讯、航太和国防、其他应用)

受访公司范例(47家值得关注的公司)

  • Analog Devices, Inc.
  • AXT Inc.
  • CEL(California Eastern Laboratories)
  • China Crystal Technologies
  • Coherent Corp.
  • Freiberger Compound Materials GmbH
  • Guerrilla RF
  • IQE PLC
  • MACOM Technology Solutions
  • Microchip Technology Inc.
  • Murata Manufacturing Co., Ltd.
  • NXP Semiconductors NV
  • ON Semiconductor Corporation
  • Qorvo, Inc.
  • RFHIC Corporation
  • Shenzhou Crystal Technology Co., Ltd.
  • Skyworks Solutions, Inc.
  • Sumitomo Electric Industries, Ltd.
  • United Monolithic Semiconductors SAS
  • Xiamen Powerway Advanced Material Co., Ltd.

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关税影响係数

全球产业分析师根据公司总部所在国家、製造地、进出口状况(成品和原始OEM)预测其竞争态势的变化。这种复杂且多面向的市场动态预计将以多种方式影响竞争对手,包括销货成本成本 (COGS) 上升、盈利下降、供应链重组以及其他微观和宏观市场动态。

目录

第一章调查方法

第二章执行摘要

  • 市场概览
  • 主要企业
  • 市场趋势和驱动因素
  • 全球市场展望

第三章市场分析

  • 美国
  • 加拿大
  • 日本
  • 中国
  • 欧洲
  • 法国
  • 德国
  • 义大利
  • 英国
  • 其他欧洲国家
  • 亚太地区
  • 其他地区

第四章 竞赛

简介目录
Product Code: MCP35099

Global Gallium Arsenide (GaAs) RF Devices Market to Reach US$909.4 Million by 2030

The global market for Gallium Arsenide (GaAs) RF Devices estimated at US$595.6 Million in the year 2024, is expected to reach US$909.4 Million by 2030, growing at a CAGR of 7.3% over the analysis period 2024-2030. Filters, one of the segments analyzed in the report, is expected to record a 7.7% CAGR and reach US$377.3 Million by the end of the analysis period. Growth in the Power Amplifiers segment is estimated at 5.3% CAGR over the analysis period.

The U.S. Market is Estimated at US$156.6 Million While China is Forecast to Grow at 7.1% CAGR

The Gallium Arsenide (GaAs) RF Devices market in the U.S. is estimated at US$156.6 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$145.6 Million by the year 2030 trailing a CAGR of 7.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 6.8% and 6.1% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 5.8% CAGR.

Global Gallium Arsenide (GaAs) RF Devices Market - Key Trends & Drivers Summarized

Why Are GaAs RF Devices Essential to Modern High-Frequency Communications?

Gallium Arsenide (GaAs) RF devices are increasingly recognized as foundational components in the global communication infrastructure, enabling the high-frequency, low-noise, and high-efficiency performance required by modern wireless systems. GaAs possesses superior electron mobility and a direct bandgap, which allow it to outperform silicon in radio frequency (RF) and microwave applications, particularly in devices where power efficiency and signal fidelity are crucial. These characteristics make GaAs RF devices-such as power amplifiers, low-noise amplifiers, switches, and mixers-especially suitable for critical sectors including mobile telecommunications, aerospace and defense, satellite communication, radar systems, and wireless broadband. In consumer electronics, smartphones heavily rely on GaAs RF front-end modules to support multiband 4G and 5G connectivity while preserving battery life and maintaining compact form factors. GaAs devices also excel in linearity and gain, enabling them to support sophisticated modulation schemes required for high-data-rate applications. As the world shifts toward increasingly high-frequency spectrum usage, such as millimeter-wave frequencies in 5G and beyond, the limitations of silicon become more apparent-further solidifying GaAs’s relevance in advanced RF circuit design. With a growing emphasis on reliable, high-throughput wireless communication across devices and networks, GaAs RF devices are positioned as indispensable enablers of high-performance connectivity.

How Are Industry Applications Driving Growth and Diversification of GaAs RF Devices?

The expanding landscape of wireless-enabled applications is propelling the adoption of GaAs RF devices across a wide range of industries, each leveraging the technology’s unique strengths for specific operational demands. In mobile communications, GaAs power amplifiers and switches are widely used in both user devices and base stations to ensure strong signal transmission and reception across multiple frequency bands, including sub-6 GHz and mmWave. The defense and aerospace sectors have long depended on GaAs RF technology for radar, electronic warfare, and secure communication systems, where high power output, ruggedness, and resistance to radiation are vital. In satellite communications, GaAs RF components are used in transponders and terminals to provide high-frequency links for broadcasting, navigation, and global internet services. Additionally, the automotive industry is adopting GaAs RF devices in emerging applications such as vehicle-to-everything (V2X) communication and advanced driver-assistance systems (ADAS), where reliable high-frequency performance is critical to safety and autonomous functionality. Industrial IoT (IIoT) and smart infrastructure are also benefiting from GaAs RF devices in applications like smart meters, remote sensing, and machine-to-machine (M2M) communication. These diverse use cases are not only expanding market demand but are also encouraging manufacturers to develop custom, application-specific GaAs RF solutions that meet unique environmental and technical specifications.

What Technological Innovations Are Enhancing the Performance and Integration of GaAs RF Devices?

Breakthroughs in materials engineering, circuit design, and semiconductor processing are significantly enhancing the performance, integration, and manufacturability of GaAs RF devices, enabling them to meet the increasingly stringent demands of next-generation communication systems. Improvements in epitaxial growth techniques-such as metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE)-are producing higher-purity GaAs wafers with precise control over doping profiles and heterojunction formation, which are essential for fabricating high-efficiency transistors like HBTs (heterojunction bipolar transistors) and pHEMTs (pseudomorphic high electron mobility transistors). Advanced lithography and etching processes are enabling finer geometries and greater integration density, allowing for compact and high-performance monolithic microwave integrated circuits (MMICs). These MMICs, fabricated using GaAs substrates, combine multiple RF functions-such as amplification, filtering, and switching-into a single chip, reducing power consumption and physical footprint. Innovations in thermal management, including the use of advanced packaging and heat-spreading techniques, are improving the reliability of GaAs RF devices in high-power and high-temperature environments. Additionally, hybrid integration with complementary technologies such as GaN and SiGe is enabling multifunctional modules that combine the advantages of different materials to optimize performance across a wider frequency spectrum. With the support of electronic design automation (EDA) tools tailored for RF simulation and layout, engineers can now design, test, and iterate GaAs RF circuits more efficiently, accelerating the development of cutting-edge wireless systems.

What Market Forces Are Driving the Expansion of the GaAs RF Devices Industry?

The global GaAs RF devices market is experiencing robust growth fueled by the convergence of macroeconomic trends, technological imperatives, and evolving consumer expectations. One of the most prominent drivers is the rapid rollout and densification of 5G networks, which demand high-frequency and high-efficiency RF components capable of supporting greater bandwidth, low latency, and enhanced device-to-device communication. The surge in mobile data consumption, fueled by streaming, gaming, and real-time communication, is putting additional pressure on telecom providers to invest in high-performance RF hardware. Concurrently, the expansion of IoT ecosystems, from smart homes to industrial automation, is increasing the demand for compact, low-power RF modules, an area where GaAs components excel. Strategic investments by major chipmakers and government-backed initiatives to strengthen domestic semiconductor capabilities-especially in the U.S., China, South Korea, and the EU-are further energizing the GaAs RF supply chain. The trend toward miniaturization and multifunctionality in electronic devices is also driving the need for integrated RF solutions that combine performance with space and power efficiency. Meanwhile, ongoing geopolitical concerns around semiconductor supply chains are prompting nations and companies to diversify sourcing and invest in vertically integrated GaAs manufacturing. As new applications emerge in 6G, satellite internet, unmanned systems, and defense electronics, the demand for high-performance RF solutions will only grow stronger. GaAs RF devices, with their unique ability to meet the technical challenges of high-frequency operation, are well-positioned to remain a critical technology pillar in the next era of global connectivity.

SCOPE OF STUDY:

The report analyzes the Gallium Arsenide (GaAs) RF Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:

Device (Filters, Power Amplifiers, Low Noise Amplifiers, Switch, Other Devices); Application (Consumer Devices, Automotive, Telecommunications, Aerospace & Defense, Other Applications)

Geographic Regions/Countries:

World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 47 Featured) -

  • Analog Devices, Inc.
  • AXT Inc.
  • CEL (California Eastern Laboratories)
  • China Crystal Technologies
  • Coherent Corp.
  • Freiberger Compound Materials GmbH
  • Guerrilla RF
  • IQE PLC
  • MACOM Technology Solutions
  • Microchip Technology Inc.
  • Murata Manufacturing Co., Ltd.
  • NXP Semiconductors N.V.
  • ON Semiconductor Corporation
  • Qorvo, Inc.
  • RFHIC Corporation
  • Shenzhou Crystal Technology Co., Ltd.
  • Skyworks Solutions, Inc.
  • Sumitomo Electric Industries, Ltd.
  • United Monolithic Semiconductors S.A.S.
  • Xiamen Powerway Advanced Material Co., Ltd.

AI INTEGRATIONS

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Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

TABLE OF CONTENTS

I. METHODOLOGY

II. EXECUTIVE SUMMARY

  • 1. MARKET OVERVIEW
    • Influencer Market Insights
    • World Market Trajectories
    • Tariff Impact on Global Supply Chain Patterns
    • Gallium Arsenide (GaAs) RF Devices - Global Key Competitors Percentage Market Share in 2025 (E)
    • Competitive Market Presence - Strong/Active/Niche/Trivial for Players Worldwide in 2025 (E)
  • 2. FOCUS ON SELECT PLAYERS
  • 3. MARKET TRENDS & DRIVERS
    • 5G Infrastructure Rollouts Throw the Spotlight on High-Linearity GaAs RF Device Performance
    • Growth in Mobile Handsets Propels Demand for GaAs-Based Power Amplifiers and Switches
    • Push for Greater RF Efficiency Expands Addressable Market for GaAs in Multi-Band Transceivers
    • High Data Rate and Bandwidth Applications Strengthen the Business Case for GaAs Front-End Modules
    • Military and Aerospace RF Requirements Drive Continued Use of Radiation-Resistant GaAs Devices
    • Emergence of Wi-Fi 6 and 6E Standards Accelerates Adoption of GaAs in Consumer Wireless Devices
    • Low Noise Characteristics of GaAs Support Use in LNA Modules Across Telecom and IoT Equipment
    • Compact, High-Frequency Antenna Designs Benefit from GaAs-Based Component Miniaturization
    • Base Station Densification in Urban Areas Spurs Growth in GaAs RF Power Devices
    • Foundry Advancements in GaAs-on-Si Processes Enable Cost-Efficient, Scalable Production
    • Growing Role in 3D Sensing and VCSEL Modules Drives Adoption in Smartphones and Automotive Systems
    • High-Temperature Operating Requirements in Harsh Environments Support Demand for GaAs RF Components
    • Specialty Epitaxy and Wafer Processing Innovations Improve Yield and Device Consistency
  • 4. GLOBAL MARKET PERSPECTIVE
    • TABLE 1: World Gallium Arsenide (GaAs) RF Devices Market Analysis of Annual Sales in US$ Thousand for Years 2015 through 2030
    • TABLE 2: World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 3: World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets for Years 2025 & 2030
    • TABLE 4: World Recent Past, Current & Future Analysis for Filters by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 5: World 6-Year Perspective for Filters by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 6: World Recent Past, Current & Future Analysis for Power Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 7: World 6-Year Perspective for Power Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 8: World Recent Past, Current & Future Analysis for Low Noise Amplifiers by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 9: World 6-Year Perspective for Low Noise Amplifiers by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 10: World Recent Past, Current & Future Analysis for Switch by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 11: World 6-Year Perspective for Switch by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 12: World Recent Past, Current & Future Analysis for Other Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 13: World 6-Year Perspective for Other Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 14: World Recent Past, Current & Future Analysis for Other Applications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 15: World 6-Year Perspective for Other Applications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 16: World Recent Past, Current & Future Analysis for Consumer Devices by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 17: World 6-Year Perspective for Consumer Devices by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 18: World Recent Past, Current & Future Analysis for Automotive by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 19: World 6-Year Perspective for Automotive by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 20: World Recent Past, Current & Future Analysis for Telecommunications by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 21: World 6-Year Perspective for Telecommunications by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030
    • TABLE 22: World Recent Past, Current & Future Analysis for Aerospace & Defense by Geographic Region - USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 23: World 6-Year Perspective for Aerospace & Defense by Geographic Region - Percentage Breakdown of Value Sales for USA, Canada, Japan, China, Europe, Asia-Pacific and Rest of World for Years 2025 & 2030

III. MARKET ANALYSIS

  • UNITED STATES
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United States for 2025 (E)
    • TABLE 24: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 25: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 26: USA Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 27: USA 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • CANADA
    • TABLE 28: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 29: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 30: Canada Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 31: Canada 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • JAPAN
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Japan for 2025 (E)
    • TABLE 32: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 33: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 34: Japan Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 35: Japan 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • CHINA
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in China for 2025 (E)
    • TABLE 36: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 37: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 38: China Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 39: China 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • EUROPE
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Europe for 2025 (E)
    • TABLE 40: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Geographic Region - France, Germany, Italy, UK and Rest of Europe Markets - Independent Analysis of Annual Sales in US$ Thousand for Years 2024 through 2030 and % CAGR
    • TABLE 41: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Geographic Region - Percentage Breakdown of Value Sales for France, Germany, Italy, UK and Rest of Europe Markets for Years 2025 & 2030
    • TABLE 42: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 43: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 44: Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 45: Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • FRANCE
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in France for 2025 (E)
    • TABLE 46: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 47: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 48: France Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 49: France 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • GERMANY
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Germany for 2025 (E)
    • TABLE 50: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 51: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 52: Germany Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 53: Germany 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • ITALY
    • TABLE 54: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 55: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 56: Italy Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 57: Italy 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • UNITED KINGDOM
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in the United Kingdom for 2025 (E)
    • TABLE 58: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 59: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 60: UK Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 61: UK 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • REST OF EUROPE
    • TABLE 62: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 63: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 64: Rest of Europe Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 65: Rest of Europe 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • ASIA-PACIFIC
    • Gallium Arsenide (GaAs) RF Devices Market Presence - Strong/Active/Niche/Trivial - Key Competitors in Asia-Pacific for 2025 (E)
    • TABLE 66: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 67: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 68: Asia-Pacific Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 69: Asia-Pacific 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030
  • REST OF WORLD
    • TABLE 70: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Device - Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 71: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Device - Percentage Breakdown of Value Sales for Filters, Power Amplifiers, Low Noise Amplifiers, Switch and Other Devices for the Years 2025 & 2030
    • TABLE 72: Rest of World Recent Past, Current & Future Analysis for Gallium Arsenide (GaAs) RF Devices by Application - Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense - Independent Analysis of Annual Sales in US$ Thousand for the Years 2024 through 2030 and % CAGR
    • TABLE 73: Rest of World 6-Year Perspective for Gallium Arsenide (GaAs) RF Devices by Application - Percentage Breakdown of Value Sales for Other Applications, Consumer Devices, Automotive, Telecommunications and Aerospace & Defense for the Years 2025 & 2030

IV. COMPETITION