查看购物车
  • Traditional Chinese
  • English
  • Japanese
  • Korean
GaAs IC 的世界市场
市场调查报告书
商品编码
1483208

GaAs IC 的世界市场

The GaAs IC Market
出版日期: | 出版商: Information Network | 英文 | 商品交期: 2-3个工作天内

价格

简介

半导体产业正在经历重大转型，砷化镓积体电路 (GaAs IC) 在推动这项转型中发挥着至关重要的作用。

本报告对这一重要领域进行了深入分析，调查和研究了定义 GaAs IC 当前和未来市场格局的各种应用领域、技术进步和市场趋势。它专为希望在竞争激烈的半导体市场中获得优势的专业公司而设计，全面探讨了推动 GaAs IC 技术成长和采用的因素。

砷化镓IC技术趋势

GaAs IC 的技术进步正在重塑从通讯到国防的各个领域。最显着的趋势之一是高频应用的 GaAs IC 密度的增加。由于具有高电子迁移率，GaAs IC 在射频 (RF) 和微波电路中具有出色的性能，使其成为 5G 网路和先进卫星通讯等下一代通讯系统的必需品。砷化镓能够在更高的频率和功率水平下高效工作，这使其成为未来无线通讯的关键材料。

在光电领域，砷化镓 IC 凭藉其直接跃迁特性提高了发光应用的效率，从而获得了广泛关注。随着光纤通讯的扩展和先进感测器的普及，这种趋势尤其明显，而砷化镓 IC 提供了无与伦比的速度和可靠性。随着产业不断突破资料传输和感测技术的界限，GaAs IC 将在实现更高性能标准方面发挥关键作用。

国防和航空航太领域也是引进砷化镓IC技术的主要领域。 GaAs 电路在恶劣条件下的稳健性和高性能使其成为雷达系统、电子战和其他关键防御技术的理想选择。此外，人们对能源效率和再生能源解决方案的兴趣日益浓厚，也推动了人们对基于砷化镓的功率放大器和转换器的兴趣，它们比传统硅基装置具有更好的效率和热管理能力。

目录

第一章简介

第 2 章执行摘要

第 3 章技术问题

  • 砷化镓装置
    • 场效电晶体
    • HEMT
    • HBT
  • 逻辑结构比较
    • 缓衝 FET 逻辑
    • FET 逻辑
    • 容量增强逻辑
    • 直接耦合 FET 逻辑
    • 源极耦合 FET 逻辑
  • 主要问题
    • 晶圆製造
    • 蚀刻坑密度 (HPD)
  • 设备
    • 离子注入机（注入机）
    • 光刻
    • 蚀刻
    • 气相沉积
    • 快速热处理
  • 套餐
    • 封装类型
    • 附着力
  • 考试
  • 设计

第四章GaAs IC的应用领域

  • 简介
    • 频率较高的趋势
    • 从类比调变到数位调变的转变
    • 分立元件和硅基 IC
  • 市场
    • 通讯系统
    • 电视系统
    • 计算
    • 数据通信
    • 汽车
    • 自动测试设备
    • 军事

第 5 章 IC 供应商与最终使用者问题

  • 简介
  • 与硅的竞争
  • 与日本公司的竞争
  • 台湾市场势头
  • 韩国市场势头强劲
  • 晶圆尺寸
  • 与 SiGe 的竞争
    • 简介
    • 技术
    • 应用领域

第六章市场预测

  • 促进因素
  • 市场预测的假设
  • 砷化镓 IC 市场预测
  • SiGe IC 市场预测
  • 最终用途市场

第七章 GaAs IC 厂商概况

Introduction

The semiconductor industry is on the cusp of significant transformations, with Gallium Arsenide Integrated Circuits (GaAs ICs) playing a pivotal role in driving these changes. Our report, "The GaAs IC Market," offers an in-depth analysis of this crucial segment, exploring the multifaceted applications, technological advancements, and market dynamics that define the current and future landscape of GaAs ICs. Designed for professionals looking to stay ahead in the competitive semiconductor market, this report provides comprehensive insights into the factors propelling the growth and adoption of GaAs IC technology.

Trends in GaAs IC Technology

The technological advancements in GaAs ICs are reshaping various sectors, from telecommunications to defense. One of the most prominent trends is the increasing integration of GaAs ICs in high-frequency applications. Thanks to their high electron mobility, GaAs ICs offer superior performance in RF and microwave circuits, making them indispensable for next-generation communication systems such as 5G networks and advanced satellite communications. The ability of GaAs to operate efficiently at higher frequencies and power levels positions it as a key material for the future of wireless communication.

In the realm of optoelectronics, GaAs ICs are gaining traction due to their direct bandgap property, which enhances their efficiency in light-emitting applications. This trend is particularly notable in the expansion of fiber optic communications and the proliferation of advanced sensors, where GaAs ICs provide unparalleled speed and reliability. As industries continue to push the boundaries of data transmission and sensing technologies, GaAs ICs are set to play a critical role in achieving higher performance standards.

The defense and aerospace sectors are also major adopters of GaAs IC technology. The robustness and high-performance capabilities of GaAs circuits under extreme conditions make them ideal for applications in radar systems, electronic warfare, and other critical defense technologies. Additionally, the growing focus on energy efficiency and renewable energy solutions has spurred interest in GaAs-based power amplifiers and converters, which offer superior efficiency and thermal management compared to traditional silicon-based devices.

The Need to Purchase This Report

For businesses and professionals navigating the semiconductor landscape, understanding the intricacies of the GaAs IC market is essential. This report provides a detailed analysis of current market trends, technological innovations, and key drivers shaping the GaAs IC industry. By purchasing this report, stakeholders will gain a strategic advantage through comprehensive market forecasts, competitive landscape evaluations, and insights into the latest advancements in GaAs technology.

Our report offers strategic recommendations for leveraging GaAs IC technology to enhance product performance and capture market opportunities. It delves into the applications of GaAs ICs across various sectors, including telecommunications, optoelectronics, and defense, providing readers with actionable intelligence to inform investment and development decisions. Companies looking to invest in GaAs technology or expand their market presence will find this report invaluable for identifying growth areas and understanding competitive dynamics.

In essence, "The GaAs IC Market" report is an indispensable resource for industry professionals, engineers, researchers, and business leaders. It equips readers with the knowledge needed to navigate the complexities of the GaAs IC market and capitalize on emerging opportunities. By understanding the trends and technological advancements detailed in this report, stakeholders can make informed decisions that drive innovation and growth in the semiconductor industry.

Table of Contents

Chapter 1. Introduction

Chapter 2. Executive Summary

  • 2.1. Summary of Major Issues
  • 2.2. Summary of Market Forecast

Chapter 3. Technology Issues

  • 3.1. GaAs Devices
    • 3.1.1. FETs
    • 3.1.2. HEMTs
    • 3.1.3. HBT
  • 3.2. Comparison of Logic Structures
    • 3.2.1. Buffered FET Logic
    • 3.2.2. FET Logic
    • 3.2.3. Capacitively Enhanced Logic
    • 3.2.4. Direct-Coupled FET Logic
    • 3.2.5. Source-Coupled FET Logic
  • 3.3. Material Issues
    • 3.3.1. Wafer Production
    • 3.3.2. Etch Pit Densities
  • 3.4. Equipment
    • 3.4.1. Implanters
    • 3.4.2. Lithography
    • 3.4.3. Etching
    • 3.4.4. Deposition
    • 3.4.5. Rapid Thermal Processing
  • 3.5. Packaging
    • 3.5.1. Package Types
    • 3.5.2. Bonding
  • 3.6. Testing
  • 3.7. Design

Chapter 4. Applications for GaAs ICs

  • 4.1. Introduction
    • 4.1.1. The Trend Toward Higher Frequencies
    • 4.1.2. Transition from Analog to Digital Modulation
    • 4.1.3. Discrete Components and Silicon-Based ICs
  • 4.2. Markets
    • 4.2.1. Telecommunications Systems
    • 4.2.2. Television Systems
    • 4.2.3. Computing
    • 4.2.4. Data Communications
    • 4.2.5. Automotive
    • 4.2.6. Automated Test Equipment
    • 4.2.7. Military

Chapter 5. IC Supplier and End-User Issues

  • 5.1. Introduction
  • 5.2. Competing Against Silicon
  • 5.3. Competing Against The Japanese
  • 5.4. Taiwan's Market Momentum
  • 5.5. Korea's Market Momentum
  • 5.6. Wafer Sizes
  • 5.7. Competing Against SiGe
    • 5.7.1. Introduction
    • 5.7.2. Technology
      • 5.7.2.1. Strained Silicon
      • 5.7.2.2. Device Manufacturing
    • 5.7.3. Applications
      • 5.7.3.1. Wireless LAN
      • 5.7.3.2. WiMAX
      • 5.7.3.3. Bluetooth
      • 5.7.3.4. Cellular
      • 5.7.3.5. GPS

Chapter 6. Market Forecast

  • 6.1. Driving Forces
  • 6.2. Market Forecast Assumptions
  • 6.3. GaAs IC Market Forecast
  • 6.4. SiGe IC Market Forecast
  • 6.5. End Application Market

Chapter 7. Profile of GaAs IC Manufacturers

LIST OF TABLES

  • 5.1. Cost Comparison for GaAs Structures
  • 5.2. A Comparison of SiGe BiCMOS, RF CMOS, and InGaP/GaAs
  • 6.1. Worldwide Merchant GaAs IC Market Forecast By Device Type
  • 6.2. Worldwide Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide Merchant Market Forecast By Application
  • 6.4. Market Shares of Merchant Participants-2013

LIST OF FIGURES

  • 3.1. Schematic of GaAs MESFET
  • 3.2. Schematic of GaAs HEMT Device
  • 3.3. Schematic of GaAs HBT Device
  • 3.4. Schematic of GaAs HBT Device
  • 3.5. Symbolic Representations of Various GaAs Transistor Type
  • 3.6. Schematic of BFL Logic Gate
  • 3.7. Schematic of FETL Logic Gate
  • 3.8. Schematic of CEL Logic Gate
  • 3.9. Schematic of DCFL Logic Gate
  • 3.10. Schematic of SCFL Logic Gate
  • 3.11. Full wafer EPD mapping of LEC and VGF wafers
  • 3.12. Mesoscopic EL2 mapping of LEC and VGF wafers
  • 3.13. pHEMT MMIC Process Flow Chart
  • 3.14. 0.15 Micron 3MI Process Cross Section
  • 3.15. InGaP HBT Process
  • 5.1. Comparison of Die Costs of Si and GaAs
  • 5.2. Strained Silicon Germanium Technology
  • 5.3. Fourth Generation Of Strain Technology
  • 5.4. Performance Versus Germanium Content
  • 5.5. Bulk Versus SOI Strain Method
  • 6.1. Worldwide Merchant GaAs IC Market Forecast
  • 6.2. Worldwide GaAs Merchant Market Forecast By Geographical Region
  • 6.3. Worldwide GaAs Merchant Market Forecast By Application
  • 6.4. Global Handset Market
  • 6.5. Migration Of PA's In Handset Market
  • 6.6. CMOS Replacement Of Bipolar And GaAs
  • 6.7. Worldwide SiGe Market Forecast