市场调查报告书
商品编码
1192495
面向人工智能 (AI) 的存储器专利态势分析 (2023)Memory for Artificial Intelligence Patent Landscape Analysis 2023 |
本报告分析了与人工智能 (AI) 存储器相关的最新专利情况,概述了适用于人工智能/机器学习 (AI/ML) 应用的存储器技术,并提供了近期专利申请和批准的概述. 我们将彙编和发布主要知识产权公司(专利所有者/申请人)的趋势、细分趋势、概况和专利组合等信息。
近年来,神经拟态计算作为后摩尔定律时代的一项很有前途的技术出现了。 神经形态计算系统的特点是高连接性和并行性,以及相对较低的功耗和内存处理。 为了在硬件中实现这样的系统,我们需要模拟生物有机体的人工神经元和突触。 两者都应该是节能的、可扩展的,并且能够实施相关的学习规则以促进大规模的神经形态功能。 为此,近年来人们进行了□□许多尝试,使用 MRAM、PCM、ReRAM(存储器)、CB-RAM、FeRAM、FeFET 和突触晶体管等新型存储器来创建人工神经元和突触。
因此,Knowmade 探索了与人工智能/机器学习 (AI/ML) 应用的存储器技术相关的专利格局,从材料和设备到使用它们的系统和方法,再到存储器技术(ReRAM、PCM、MRAM、FRAM/FeFET、闪存、DRAM、SRAM 等),我们正在推出一份新报告,目的是获得全面的了解。
本报告旨在回答以下问题:
该专利涵盖新兴的基于电阻的内存技术(ReRAM、PCM、MRAM)、基于极化的新兴内存技术(FRAM/FeFET),以及为神经形态计算开发的内存技术的传统内存技术。(闪存、DRAM、SRAM) ),其他存储技术(突触离子晶体管,基于二维或一维材料的设备,混合材料,钙钛矿,纳米粒子,量子物理学,有机材料,斯格明子等),未指定(未指定存储技术类型)。
所有新兴存储器目前都在调查中,FRAM 保护近年来呈上升趋势。 RRAM是世界上拥有最多发明和可执行专利的技术。
知识产权报告包含八家主要知识产权公司的知识产权概况:IBM、三星、应用材料、TDK、SK 海力士、旺宏、惠普和 TetraMem。
我们分析了每家公司与 AI 存储器技术相关的专利组合,并提供了诸如其优势、增强潜力、知识产权活动水平、主要知识产权合作、近期专利活动和主要发明增加等信息。
该报告包括一个广泛的 Excel 数据库,其中包含已分析的 1,300 多个专利家族(发明)。 这个有用的专利数据库是多标准可搜索的,包括专利公开号、最新在线数据库的超链接(文本、法律状态等)、优先权日期、标题、摘要、专利受让人和专利当前状态。包括合法状态,9 段(RRAM、PCM、MRAM、FeRAM/FeFET、闪存、DRAM、SRAM、其他、未指定)。
Are there specific memory technologies claimed in patents that are more suitable than others for artificial intelligence/machine learning (AI/ML) applications? Who are the key patent owners and the most active patent applicants in the field?
In recent years, neuromorphic computing has emerged as a promising technology in the post-Moore's law era. Neuromorphic computing systems are highly connected and parallel and consume relatively low power and processes in memory. Artificial neurons and synapses that mimic biological ones are needed to implement such a system on hardware. Both must be power-efficient, scalable, and capable of implementing relevant learning rules to facilitate large-scale neuromorphic functions. To this end, numerous efforts have been made over the last few years to create artificial neurons and synapses using emerging memories, including magnetoresistive random-access memory (MRAM), phase-change memory (PCM), resistive random-access memory (ReRAM or memristors), conductive bridging random-access memory (CB-RAM), ferroelectric random-access memory (FeRAM), ferroelectric field-effect transistor (FeFET), synaptic transistors, and others.
In this context, Knowmade is releasing a new report that aims to provide a comprehensive view of the patent landscape related to memory technologies for artificial intelligence/machine learning (AI/ML) applications, from materials and devices to the systems and methods that use them, categorized into memory technologies (ReRAM, PCM, MRAM, FRAM/FeFET, Flash, DRAM, SRAM, etc.).
In this report, we aim to answer the following questions:
Patent landscape analysis is a powerful tool for understanding the competitive and technological environment. It makes it possible to identify new players in emerging industries long before they enter the market while providing a better understanding of their expertise and know-how of a specific technology. Overall, patenting activity (patent filings) reflects the level of R&D investment made by a country or player in a specific technology while providing clues as to the technology readiness level reached by the main IP players. What's more, the technology coverage and the geographical coverage of the patent portfolios are closely related to the business strategy of IP players.
A mix of IC and memory players, universities, and R&D centers are competing for innovation at all stages of the R&D ladder. Industrial companies' patenting activity took off in 2015 after R&D efforts were focused on research and fundamental physics knowledge. American and Korean industrials and Chinese and Korean universities mainly hold patents. Top patent assignees are well-established semiconductor companies, and IBM and Samsung have a leading IP position. New players such as Applied Materials, TSMC, GlobalFoundries, TetraMem, and ICLeague are entering the game, and their intellectual property (IP) may become important in the coming years.
The patents have been categorized according to the memory technologies developed for neuromorphic computation: resistance-based emerging memory technology (ReRAM, PCM, MRAM), polarization-based emerging memory technology (FRAM/FeFET), traditional memory technologies (Flash, DRAM, SRAM), other memory technologies (synaptic ionic transistor, devices based on 2D or 1D materials, hybrid materials, perovskites, nanoparticles, quantum physics, organic materials, skyrmions, etc.), and not specific (type of memory technology not specified).
All emerging memories are currently under investigation, with an upward trend for protecting FRAM in recent years. RRAM is the technology with the most inventions and the most significant number of enforceable patents worldwide.
The IP report includes the IP profile of eight key IP players: IBM, Samsung, Applied Materials, TDK, SK hynix, Macronix, HP, and TetraMem.
Each player's patent portfolio related to memory technologies for AI applications is analyzed to provide an overview of its strengths, potential for reinforcement, level of IP activity, main IP collaborations, recent patenting activity, and inventions that stand out.
This report includes an extensive Excel database with the 1,300+ patent families (inventions) analyzed in this study. This useful patent database allows for multicriteria searches and includes patent publication numbers, hyperlinks to an updated online database (original documents, legal status, etc.), priority date, title, abstract, patent assignees, patent's current legal status, and nine segments (RRAM, PCM, MRAM, FeRAM/FeFET, Flash, DRAM, SRAM, other, not specific).