市场调查报告书
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1611486
碳化硅(SiC)的专利形势的分析(2024年)Silicon Carbide (SiC) Patent Landscape Analysis 2024 |
了解 SiC 产业的最新 IP 演变和趋势。
调查整个 SiC 供应链的专利活动。
在 2022 年碳化硅 (SiC) 专利格局中,KnowMade 透露,SiC 装置的智慧财产权 (IP) 活动正在增加。许多历史悠久的智慧财产权公司在此期间寻求扩大其碳化硅发明的保护范围。随着电动车 (EV) 推动功率 SiC 市场的崛起,SiC 公司在欧洲和中国等行业战略地区申请了更多专利。同时,电动车的繁荣促使许多新进业者加速了 SiC 技术的开发,因此年轻 SiC 市场的早期领导者可能会维持甚至加速其智慧财产权活动,为未来几年的激烈竞争做好准备。你做。在这种情况下,主要的 SiC 公司可能会利用专利来保护市场占有率并获得进入 SiC 行业所需的大量投资。市场竞争的加剧在知识产权领域已经很明显。
中美之间的地缘政治紧张局势也促使专利申请量增加,并加速全球(尤其是中国)本土半导体生态系统的形成。 2023年,中国企业将占整个SiC供应链专利公开量的70%以上,新进市场的企业数量也可圈可点,其中包括许多涉足SiC晶圆产业的企业。随着许多公司参与SiC晶圆的开发,中国已经成功遏制了供应短缺的局面,但激烈的价格竞争让许多供应商迎来了经济不稳定的时代。这种新情况可能有利于碳化硅晶圆供应商之间的专利诉讼。
本报告提供全球碳化硅(SiC)产业调查分析,超过1万9,000件的专利的Excel资料库之外又加上,全球专利趋势的说明,及主要企业的IP简介等资讯。
Figure out the latest IP evolutions and trends in the SiC industry.
Explore the patenting activities across the SiC supply chain.
In the Silicon Carbide (SiC) patent landscape 2022, KnowMade found out that the intellectual property (IP) activities were ramping up for SiC devices. Many historical IP players aimed to increase the perimeter of protection for their SiC inventions at this time. Electric vehicles (EV) had been driving the emergence of the power SiC market, prompting SiC companies to file more patents in strategic regions for this industry, such as Europe and China. In parallel, early leaders in the young SiC market have maintained or even accelerated their IP activities to prepare for a stronger competition in the next few years, since the EV boom led many new players to speed up the development of SiC technology. In this context, patents may be leveraged by leading SiC companies to protect their market share and thereby secure the large investments that have been required to enter the SiC industry. The growing competition in the market is already conspicuous in the IP landscape.
Geopolitical tensions between US and China have also triggered an increase in patent filings, accelerating the formation of local semiconductor ecosystems across the world, especially in China. In 2023, Chinese players were responsible for more than 70% of patent publications across the whole SiC supply chain, with an impressive number of newcomers, of which many companies involved in the SiC wafer industry. With such a high number of companies involved in SiC wafer developments, China has already succeeded in stopping the shortage situation but opened a period of economic instability for many suppliers due to a fierce price competition. This new context may favor patent litigations between SiC wafer suppliers.
The first section of the Silicon Carbide (SiC) Patent Landscape report 2024 describes the global patent competition across the SiC supply chain by identifying the main IP players and newcomers and positioning their patent portfolios in each part of the SiC supply chain. The SiC patent portfolios are also analyzed geographically to highlight important markets in the IP strategy of SiC companies.
For SiC power devices, the patent analysis has been split into diodes, MOSFET and other SiC devices. What's more, for SiC MOSFET, the IP competitive analysis is available for planar MOSFET and trench MOSFET separately. It highlights the fact that most companies in the SiC patent landscape have integrated trench MOSFET in their technological roadmap, leading to an acceleration in patent filings in this area. As a result, trench MOSFET has become an increasingly competitive IP space in recent years.
Furthermore, a special focus is made on China which stands out by the explosion of the number of patent assignees in recent years, and an IP activity that is strongly dominated by domestic patent filings. Few players stand out by filing patent applications outside China. Interestingly, due to the very high patenting activity in China, patent analysis has become very relevant to describe such a dense ecosystem and make it less opaque to global competitors.
Eventually, the patent analysis highlights the IP activities of main market players, which are facing strong competition from many players in this landscape. They are either future market competitors, future integrators of SiC devices such as automotive Tiers-1 and OEM, or even potential suppliers (SiC equipment, materials). Indeed, patents may also be instrumental in negotiations and partnerships across the future SiC supply chain.
The second section of the Silicon Carbide (SiC) Patent Landscape report 2024 focuses on the IP activities of main SiC device market players and/or companies investing significantly into building a vertically-integrated infrastructure for SiC. Such companies have adopted an IDM business model and look to integrate within the company every step of SiC manufacturing, from material growth, to device manufacturing and packaging. Interestingly, the comparison of their IP activities highlights quite differentiated IP strategies. While certain companies heavily rely on patents to assert their position in the market, other companies have not significantly developed their patent portfolio across the SiC supply chain. Regarding the geographic distribution of patent filings, there are also some discrepancies between players, showing the relative importance of the different markets for each company (US, Japan, Europe, China, South Korea and Taiwan).
This patent analysis provides a complete overview of the SiC patent portfolios held by Wolfspeed, Infineon, onsemi, Rohm, SK, STMicroelectronics, Coherent (and its licensor General Electric) and San'an. By focusing on the recent patenting activities of such players, it is possible to detect small signals, such as involvement in new technological areas (e.g., superjunction structures, trench MOSFET), or a strong IP activity in new regions. As such, it may provide some indications regarding the strategic plans of the company. Eventually, this review of the latest patent publications details the recent evolutions of SiC technology at every level of the supply chain.
This report includes an extensive Excel database with the 19,000+ patent families (inventions) analyzed in this study, including patent information (numbers, dates, assignees, title, abstract, etc.) and hyperlinks to an updated online database (original documents, legal status, etc.), and segments (bulk SiC, epitaxial SiC substrates, SiC diodes, planar SiC MOSFETs, trench SiC MOSFETs, SiC modules, circuits, etc.). Additionally, the Excel file comprises the complete data by assignee from the statistical analyses, including the number of patent families, timeline of patenting activity, number of granted patents and pending patent applications, and geographical coverage of patent portfolio.
Mitsubishi Electric, Sumitomo Electric, Denso, Fuji Electric, Toyota Group, Hitachi, Infineon, Toshiba, Rohm, Resonac, Panasonic , Wolfspeed, SICC, CETC, Nissan, State Grid (SGCC), General Electric, San'an, LG Corporation, CRRC, ABB, Hyundai, Siemens, Global Power Technology, Shindengen Electric Manufacturing, STMicroelectronics, CEC, FerroTec Holdings, Synlight Crystal, Onsemi, Bosch, Disco, Kansai Electric Power (KEPCO), TankeBlue, SK group, Tongwei Microelectronics, Midea, BASiC Semiconductor, TYSiC - Tianyu Semiconductor Technology, PN Junction Semiconductor, iSabers Materials, Spectrum Semiconductor, Shin-Etsu, KY Semiconductor, Sanken Electric, Gree Electric Appliances, Century Goldray (CENGOL), Sharp, Kyocera, Watech Electronics, Sirius Semiconductor, Huawei, Proterial (Hitachi Metals), Senic, Toyo Tanso, Shanghai Hestia Power, Coherent, YASC - Anhui Yangtze Advanced Semiconductor, GlobalWafers, BYD, Northrop Grumman, Microchip Technology, EpiWorld, Volkswagen Group, Sumitomo Metal Mining, JRC - Japan Radio, Semikron Danfoss, Chongqing Wattscience Electronic Technology, Hoshine, Power Integrations, Meidensha Electric Manufacturing, StarPower Semiconductor, United Nova Technology (UNT), Soitec, Delta Electronics, ZF, Guangzhou Summit Crystal Semiconductor (GZSC), Jiangsu Jixin Advanced Materials, Xiner, Huaxinwei Semiconductor Technology (Beijing) , Semisouth Lab, Beijing Microcore Technology, Hypersics Semiconductor, SiCentury, Macrocore Semiconductor, Daikin Industries, Nissin Electric, Raytheon Technologies, NCE Power, etc.