3D NAND快闪记忆体记忆体的全球市场预测(2022年～2027年)

全球3D NAND快闪记忆体记忆体的市场规模在2020年估算为312亿8,900万美金。市场成长的主要因素有对这项技术的需求不断增加，因为现有技术无法满足必要的要求等。

本报告提供全球3D NAND快闪记忆体记忆体市场相关调查，提供市场规模和预测，COVID-19影响，市场促进因素及课题，市场趋势，各市场区隔的市场分析，竞争情形，主要企业的简介等系统性资讯。

目录

第1章 简介

• 市场概要
• COVID-19影响
• 市场定义
• 市场区隔

第2章 调查手法

• 调查资料
• 前提条件

第3章 摘要整理

• 调查的重点

第4章 市场动态

• 推动市场要素
• 阻碍市场要素
• 波特的五力分析
  • 供给企业谈判力
  • 买方议价能力
  • 新加入厂商者的威胁
  • 替代品的威胁
  • 竞争企业间的敌对关係
• 产业的价值链分析

第5章 3D NAND快闪记忆体记忆体市场:各技术

• 单层电池 (SLC)
• 多层单元 (MLC)
• 三级电池 (TLC)

第6章 3D NAND快闪记忆体记忆体市场:各最终用途业界

• 汽车
• 家用电器产品
• 通讯
• 其他

第7章 3D NAND快闪记忆体记忆体市场:各地区

• 简介
• 南北美洲
  • 美国
  • 其他
• 欧洲，中东·非洲
  • 德国
  • 法国
  • 英国
  • 其他
• 亚太地区
  • 中国
  • 日本
  • 印度
  • 韩国
  • 台湾
  • 其他

第8章 竞争情形

• 主要企业策略分析
• 新兴企业与市场的有利性
• 合併，收购，契约，合作
• 供应商的竞争矩阵

第9章 企业简介

• Intel Corporation
• Micron Technology Inc.
• Sk Hynix Inc.
• Samsung
• Western Digital Corporation
• Toshiba Electronic Devices & Storage Corporation
• Changiiang Storage Technology Co., Ltd.
• ATP Electronics Inc.

The 3D NAND flash memory market is estimated to be valued at US$31.289 billion in 2020. The 3D NAND flash memory technology has come into the picture due to a continuous increase in demand for data storage, it offers more storage and has a faster processing speed at a cheaper cost.

There is an extensive demand for this technology as the existing technologies are not able to fulfil the desired requirements. The 3D NAND here proves very efficient by giving a faster processing speed in a more compact size along with minimum power consumption.

By end-user, the 3D NAND Flash Memory market is segmented into automotive, consumer electronics, communications, and others. The consumer electronics segment shows tremendous growth resulting from an increase in disposable income, and due to rapid technological developments in the smartphone market, demands for faster processing at a minimum space are increasing. Many companies are spending heavily on R&D which shows the growth of these devices at a greater pace during the forecasted period.

By geography, the 3D NAND Flash Memory market is segmented into North America, South America, Europe, the Middle East, Africa, and Asia Pacific. The Asia Pacific region is expected to witness a significant increase in demand for the 3D NAND market due to an increase in investments in data centers. Simultaneously, the increase in production of smartphones & automobiles in China and India acts as a driver which is expected to push the demand for 3D NAND during the forecasted period.

Key Developments:

• July 2022: Micron Technology, Inc. announced that it has started volume manufacturing of the world's first 232-layer NAND. In comparison to earlier generations of Micron NAND, it offers the most industry-leading areal density, more capacity, and enhanced energy efficiency, enabling best-in-class support for the most data-intensive use scenarios from client to cloud. With the help of this NAND's ground-breaking capabilities, customers will be able to offer more creative solutions for data centers, lighter, slimmer laptops, the newest mobile devices, and the intelligent edge.
• September 2022: Apple has approved Yangtze Memory Technologies Corp.'s 3D NAND flash to be used in the next iPhone 14 devices. Apple is evaluating alternative NAND memory suppliers for the iPhone in an effort to diversify its supply chain and boost its resilience in the face of unexpected disruptions. The decision is a big milestone for YMTC and will guarantee a continuous supply of flash memory for Apple's upcoming products. Yangtze will provide 3D NAND for the next iPhone 14 models. The latest series of six-plane 3D NAND chips from YMTC, which have a 2400 MT/s interface speed and the firm's Xtacking 3.0 architecture, are among the company's competitive upcoming products. In the future, these processors could be able to power some of the finest SSDs.
• September 2022: Samsung Electronics has started producing on a new production line NAND in South Korea. NAND flash is being produced in the new production line in Pyeongtaek, the biggest chip manufacturing facility ever constructed by Samsung. According to Samsung, the Pyeongtaek campus, which is home to 60,000 employees, is almost as big as the combined 1.45 million square metres of the Giheung and 1.6 million square metres of the Hwaseong campuses.The Pyeongtaek site is becoming Samsung's primary manufacturing base for cutting-edge semiconductors, including the smallest 14-nanometer (nm) DRAM and cutting-edge V-NAND to sub-5nm logic solutions, according to the president and CEO of Samsung's DS division.

Product Offering:

• Intel QLC 3D NAND: SSDs using Intel QLC 3D NAND are made to handle massive data and storage capacity requirements. Based on QLC NAND on cell technology, which has been tested for more than 3 decades is known for its dependability and excellence. Intel's QLC benefits from novel vertical floating gate technology. SSDs are highly effective, because they have 64 layers and very small cells. It has large-capacity storage that is affordable. Intel QLC 3D NAND Innovation provides a scalable, low-cost a method to reduce the size of tri-level cell (TLC) SSDs and HDDs footprints of a system.
• Micron 3D NAND Flash Memory: Using floating gate cells, Micron's unique 3D NAND flash memory has a special architecture that overcomes density restrictions to allow endurance and performance that are superior to the norm NAND planar architecture. Micron's 32 cell 3D NAND stacks 256Gb multilevel cell die is achieved by stacking layers vertically can allow for SSDs larger than 2TB in gum stick size of storage, which is three times as much than current planar NAND remedies.
• Samsung 3bit 3D V-NAND technology: The 3bit 3D V-NAND technology from Samsung includes an unique structure that layers 32 levels of 3 bit cells instead of attempting to shorten the cells' length & to accommodate the ever-shrinking form factors. With this the density of the 3D V-NAND architecture is double that of a small-footprint 2D planar NAND with the same functionality. The 3bit V-NAND flash has surpassed the threshold of costs in dollars per gigabit for being capable of storing 3 bits per cell over 2 bits per cell when compared to Samsung's 2-bit 32-layer V-NAND technology.

Segmentation:

• By Technology

Single Level Cell (SLC)

Multi-Level Cell (MLC)

Triple Level Cell (TLC)

• By End-User Industry

Automotive

Consumer Electronics

Communications

Others

• By Geography

Americas

• USA
• Others

Europe Middle East and Africa

• Germany
• France
• United Kingdom
• Others

Asia Pacific

• China
• Japan
• India
• South Korea
• Taiwan
• Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. COVID-19 Scenario
• 1.3. Market Definition
• 1.4. Market Segmentation

2. RESEARCH METHODOLOGY

• 2.1. Research Data
• 2.2. Assumptions

3. EXECUTIVE SUMMARY

• 3.1. Research Highlights

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Forces Analysis
  • 4.3.1. Bargaining Power of Suppliers
  • 4.3.2. Bargaining Power of Buyers
  • 4.3.3. Threat of New Entrants
  • 4.3.4. Threat of Substitutes
  • 4.3.5. Competitive Rivalry in the Industry
• 4.4. Industry Value Chain Analysis

5. 3D NAND FLASH MEMORY MARKET BY TECHNOLOGY

• 5.1. Single Level Cell (SLC)
• 5.2. Multi-Level Cell (MLC)
• 5.3. Triple Level Cell (TLC)

6. 3D NAND FLASH MEMORY MARKET BY END-USER INDUSTRY

• 6.1. Automotive
• 6.2. Consumer Electronics
• 6.3. Communications
• 6.4. Others

7. 3D NAND FLASH MEMORY MARKET BY GEOGRAPHY

• 7.1. Introduction
• 7.2. Americas
  • 7.2.1. USA
  • 7.2.2. Others
• 7.3. Europe Middle East and Africa
  • 7.3.1. Germany
  • 7.3.2. France
  • 7.3.3. United Kingdom
  • 7.3.4. Others
• 7.4. Asia Pacific
  • 7.4.1. China
  • 7.4.2. Japan
  • 7.4.3. India
  • 7.4.4. South Korea
  • 7.4.5. Taiwan
  • 7.4.6. Others

8. COMPETITIVE INTELLIGENCE

• 8.1. Major Players and Strategy Analysis
• 8.2. Emerging Players and Market Lucrativeness
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations
• 8.4. Vendor Competitiveness Matrix

9. COMPANY PROFILES

• 9.1. Intel Corporation
• 9.2. Micron Technology Inc.
• 9.3. Sk Hynix Inc.
• 9.4. Samsung
• 9.5. Western Digital Corporation
• 9.6. Toshiba Electronic Devices & Storage Corporation
• 9.7. Changiiang Storage Technology Co., Ltd.
• 9.8. ATP Electronics Inc.