宽能带隙功率半导体市场 - 2024 年至 2029 年预测

预计宽能带隙功率半导体市场的复合年增长率将在预测期内达到27.37%，市场规模将从2022年的1,769,826,000美元增至2029年的9,623,132,000美元。

当以分子种类修饰时，宽能带隙(WBG) 半导体表现出独特的光学和电子特性。与电力电子领域的硅基组件相比，这些组件的特点是尺寸更小、运行速度更快、可靠性更高、效率更高。 WBG功率半导体独特的科技特性使其在高性能光电和电子设备中越来越受欢迎。目前，家用电子电器及快速充电等相关技术的需求不断增加，WBG半导体市场预计将大幅扩大。该设备利用射频来改变其物理特性，而其化学和机械特性则应用于光电应用。高性能和新颖特性的结合开闢了新的机会，并为未来的市场成长铺平了道路。

市场驱动因素：

• 越来越多地转向碳化硅 (SiC) 和氮化镓 (GaN) 材料：

在电力电子领域，宽能带隙和超宽能带隙电力电子半导体代表了革命性的创新。这些先进材料，包括碳化硅 (SiC)、氮化镓 (GaN) 和钻石，性能优于传统的硅基产品。近年来，宽能带隙电力电子半导体取得了显着进展。这包括材料品质、设备设计和製造技术的改进。优质 SiC 和 GaN基板的开发、结晶生长方法的进步基板装置製造流程的改进是学术界和工业界相关人员之间合作的结果。这些进步使得宽能带隙装置在商业性越来越可行。这是由改进的材料性能、提高的装置产量比率和降低的製造成本所推动的。

碳化硅 (SiC) 是一种被广泛研究且容易取得的宽能带隙材料。 SiC 的能隙能量约为 3.3 电子伏特 (eV)，与硅的 1.1 eV 相比显着增加。基于 SiC 的功率元件具有多种优势，包括降低传导和开关损耗、提高耐高温能力以及提高整体效率。另一种值得注意的宽能带隙材料是氮化镓（GaN），它最近受到了广泛关注。 GaN 的能隙能量约为 3.4 eV，与 SiC 类似。使用GaN的功率元件表现出出色的性能特征，例如高击穿电压、高速开关和低导通电阻。

• 市场开拓增加宽能带隙功率半导体材料的市场优势。

PowerAmerica 和 X-Fab 联合将德克萨斯) 一家生产传统硅晶圆的工厂改造成世界上第一家开放式碳化硅铸造厂。为了提高电力电子技术的能源效率和可靠性，Power America 旨在降低进入门槛并支援宽能带隙(WBG) 电力电子技术的商业化。这有望扩大美国宽能带隙功率半导体的市场占有率。

2021 年 11 月，领先的基础半导体供应商 Nexperia 宣布进军高功率碳化硅 (SiC) 二极体市场，推出 650V、10A SiC 肖特基二极体。 Nexperia 以其可靠的高效能功率氮化镓 (GaN) FET 供应而闻名，这项策略倡议旨在扩大其高电压宽能带隙半导体装置产品组合。 Nexperia 发布的 SiC 肖特基二极体是一款工业级装置。它具有 650V 的重复峰值反向电压 (VRRM) 和 10A 的连续正向电流 (IF)，专为在电源转换应用中提供超高性能、高效率和低能量损耗的组合而设计。

2022年2月17日，英飞凌科技股份公司透过扩大其在宽能带隙（SiC和GaN）半导体领域的製造能力，巩固了其在功率半导体市场的领导地位。该公司已投资超过 20 亿欧元在马来西亚居林工厂建造第三个模组。一旦全面运作，新模组预计将为基于碳化硅和氮化镓的产品带来 20 亿欧元的额外年销售额。

2023 年 6 月 19 日，Vitesco Technologies 是一家专注于最新驱动技术和电气化解决方案的全球知名製造商，已在节能碳化硅功率半导体领域获得了具有重要战略意义的能力。这项成就是与 ROHM 长期供应合作关係的结果，该合作关係延续至 2030 年，价值超过 10 亿美元。碳化硅 (SiC) 装置在高效能电力电子设备的设计中发挥重要作用，尤其是在电动车逆变器等应用中。 SiC 晶片是一项关键技术，特别是对于具有高电压、远大的续航里程目标和最佳整体效率的车辆而言。透过与 ROHM 的持续开发合作，相关 SiC 晶片将进一步增强，可用于汽车逆变器，并于 2024 年开始实施。

美洲宽能带隙功率半导体市场将显着成长：

各行业对节能电子设备的需求不断增长是推动美国市场的因素之一。

此外，对电动车的日益重视以及向可再生能源的转变正在推动美国对WBG功率半导体的需求并扩大市场。例如，各行业对节能电子设备的需求不断增长是关键的成长要素。 WBG 功率半导体对于家用电子电器、汽车和可再生能源等应用至关重要。因为 WBG 功率半导体比传统硅基元件具有更好的性能和效率。此类装置的范例包括碳化硅 (SiC) 和氮化镓 (GaN) 组件。此外，向电动车和再生能源来源的转变正在推动对 WBG 功率半导体的需求并扩大美国市场。

此外，国际能源总署宣布，2022 年美国电动车销量将比 2021 年增长 55%，其中纯电动车将推动这一成长。经过2019-2020年的强劲成长后，纯电动车销量成长了70%，达到约80万辆，标誌着第二年的强劲成长。

目录

第一章 简介

• 市场概况
• 市场定义
• 调查范围
• 市场区隔
• 货币
• 先决条件
• 基准年和预测年时间表

第二章调查方法

• 调查资料
• 调查过程

第三章执行摘要

• 研究亮点

第四章市场动态

• 市场驱动因素
• 市场限制因素
• 波特五力分析
• 产业价值链分析

第五章宽能带隙功率半导体市场：依材料分类

• 介绍
• 碳化硅
• 氮化镓
• 钻石
• 氧化镓
• 氮化铝

第 6 章宽能带隙功率半导体市场：依应用分类

• 介绍
• 资料中心
• 可再生能源发电
• 混合动力汽车和电动车
• 马达驱动

第七章宽能带隙功率半导体市场：依地区

• 介绍
• 美洲
  • 按材质
  • 按用途
  • 按国家/地区
• 欧洲/中东/非洲
  • 按材质
  • 按用途
  • 按国家/地区
• 亚太地区
  • 按材质
  • 按用途
  • 按国家/地区

第八章竞争环境及分析

• 主要企业及策略分析
• 市场占有率分析
• 合併、收购、协议和合作

第九章 公司简介

• ROHM SEMICONDUCTOR
• Wolfspeed, Inc.
• STMicroelectronics
• Infineon Technologies AG
• Mitsubishi Electric Corporation
• Semikron Danfoss
• Texas Instruments
• Analog Devices, Inc.
• Navitas Semiconductor
• Microchip Technology Inc.

The wide-bandgap power semiconductor market is expected to experience a CAGR of 27.37% throughout the forecast period, reaching a market size of US$9,623.132 million by 2029, from US$1,769.826 million in 2022.

Wide-bandgap (WBG) semiconductors, when modified with molecular species, exhibit distinctive optical and electronic properties. These components are characterized by their smaller size, faster operation, enhanced reliability, and greater efficiency compared to silicon-based counterparts in power electronics. The unique scientific and technological attributes of WBG power semiconductors have led to their increasing popularity in high-performance optoelectronic and electronic devices. With a rising demand for consumer electronics and related technologies like fast charging in the current period, the market for WBG semiconductors is expected to expand significantly. The devices transform their physical characteristics at high frequencies, while their chemical and mechanical features find applications in optoelectronic uses. The combination of high performance and novel properties is opening new opportunities and paving the way for the market's growth in the years ahead.

MARKET DRIVERS:

• Rising shift towards silicon carbide (SiC) and gallium nitride (GaN) materials:

In the realm of power electronics, wide and ultrawide bandgap power electronic semiconductors represent a transformative innovation. These state-of-the-art materials, including silicon carbide (SiC), gallium nitride (GaN), and diamond, outperform traditional Si-based products. Recent years have witnessed substantial improvements in wide bandgap power electronic semiconductors. It encompasses improvements in material quality, device design, and manufacturing techniques. The development of superior SiC and GaN substrates, progress in crystal growth methods, and refinement in device production processes have resulted from collaborative efforts between academic and industry stakeholders. These advancements have made wide bandgap devices increasingly viable commercially. This is driven by heightened material performance, improved device yields, and reduced production costs.

Silicon carbide (SiC) stands out as one of the extensively researched and readily available wide bandgap materials. It possesses a bandgap energy of approximately 3.3 electron volts (eV), a notable increase compared to silicon's 1.1 eV. Power devices based on SiC offer multiple advantages, including reduced conduction and switching losses, heightened tolerance to higher temperatures, and enhanced overall efficiency. Another noteworthy wide bandgap material is gallium nitride (GaN), which has garnered significant attention in recent times. GaN exhibits a bandgap energy of approximately 3.4 eV, similar to SiC. Power devices based on GaN demonstrate exceptional performance characteristics, including high breakdown voltages, swift switching speeds, and low on-resistance.

• Market developments to increase the market lucrativeness for wide bandgap power semiconductor materials.

PowerAmerica and X-Fab partnered together to convert a former Texas Instruments facility that produced conventional silicon wafers into the world's first open silicon carbide foundry. To improve power electronics' energy efficiency and dependability, PowerAmerica aimed to lower entry barriers and assist in the commercialization of wide bandgap (WBG) power electronics technologies. This is expected to increase the market share of wide-bandgap power semiconductors in the United States.

In November 2021, Nexperia, a leading provider of essential semiconductors, announced its entry into the high-power Silicon Carbide (SiC) diodes market by introducing 650 V, 10 A SiC Schottky diodes. This strategic move by Nexperia, known for its reliable supply of efficient power Gallium Nitride (GaN) FETs, aims to broaden its portfolio of high-voltage wide bandgap semiconductor devices. The inaugural SiC Schottky diode from Nexperia is an industrial-grade device. It features a repetitive peak reverse voltage (VRRM) of 650 V and a continuous forward current (IF) of 10 A. It is specifically designed to offer a combination of ultra-high performance, high efficiency, and low energy loss in power conversion applications.

On February 17, 2022, Infineon Technologies AG bolstered its market leadership in power semiconductors by expanding manufacturing capacities in the wide bandgap (SiC and GaN) semiconductor sector. The company invested over €2 billion to construct a third module at its Kulim, Malaysia site. When fully operational, the new module was projected to generate an additional €2 billion in annual revenue with products based on silicon carbide and gallium nitride.

On June 19, 2023, Vitesco Technologies, a prominent global manufacturer specializing in modern drive technologies and electrification solutions, secured strategically significant capacities in energy-efficient silicon carbide power semiconductors. This achievement is the result of a long-term supply partnership valued at over one billion US dollars with ROHM, extending until 2030. Silicon carbide (SiC) devices play a crucial role in the design of highly efficient power electronics, especially in applications such as electric car inverters. SiC chips represent a key technology, particularly for high voltages and for vehicles with ambitious range goals and optimal overall efficiency. Through the ongoing development partnership with ROHM, the relevant SiC chips have been further enhanced for use in automotive inverters, with implementation starting in 2024.

Americas to witness significant market growth for the wide-bandgap power semiconductors market:

The growing need for energy-efficient electronic devices across a range of industries is one of the factors driving the market in the United States.

Further, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors in the United States and expanding the market. For instance, the growing need for energy-efficient electronic devices across a range of industries is an important growth drive. WBG power semiconductors are crucial for applications in consumer electronics, automotive, and renewable energy. This is because they provide better performance and efficiency than conventional silicon-based devices. Examples of these devices are silicon carbide (SiC) and gallium nitride (GaN) components. Furthermore, the growing emphasis on electric vehicles and the shift to renewable energy sources are driving up demand for WBG power semiconductors and expanding the market in the United States.

Moreover, as per the International Energy Agency, the sales of electric vehicles rose by 55% in the US in 2022 compared to 2021, with BEVs driving this growth. After a strong growth in 2019-2020, sales of BEVs increased by 70% to nearly 800,000, indicating a second year of strong growth.

Market Segmentation:

By Material

• Silicon Carbide
• Gallium Nitride
• Diamond
• Gallium Oxide
• Aluminium Nitride

By Application

• Data Centers
• Renewable Energy Generation
• Hybrid and Electric Vehicles
• Motor Drives

By Geography

• Americas
• USA
• Others
• Europe Middle East and Africa
• UK
• Germany
• France
• Others
• Asia Pacific
• China
• Japan
• Taiwan
• South Korea
• Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. Market Definition
• 1.3. Scope of the Study
• 1.4. Market Segmentation
• 1.5. Currency
• 1.6. Assumptions
• 1.7. Base, and Forecast Years Timeline

2. RESEARCH METHODOLOGY

• 2.1. Research Data
• 2.2. Research Process

3. EXECUTIVE SUMMARY

• 3.1. Research Highlights

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Forces Analysis
• 4.4. Industry Value Chain Analysis

5. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY MATERIAL

• 5.1. Introduction
• 5.2. Silicon Carbide
• 5.3. Gallium Nitride
• 5.4. Diamond
• 5.5. Gallium Oxide
• 5.6. Aluminium Nitride

6. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY APPLICATION

• 6.1. Introduction
• 6.2. Data Centers
• 6.3. Renewable Energy Generation
• 6.4. Hybrid and Electric Vehicles
• 6.5. Motor Drives

7. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET, BY GEOGRAPHY

• 7.1. Introduction
• 7.2. Americas
  • 7.2.1. By Material
  • 7.2.2. By Application
  • 7.2.3. By Country
    • 7.2.3.1. USA
    • 7.2.3.2. Others
• 7.3. Europe Middle East and Africa
  • 7.3.1. By Material
  • 7.3.2. By Application
  • 7.3.3. By Country
    • 7.3.3.1. Germany
    • 7.3.3.2. France
    • 7.3.3.3. UK
    • 7.3.3.4. Others
• 7.4. Asia Pacific
  • 7.4.1. By Material
  • 7.4.2. By Application
  • 7.4.3. By Country
    • 7.4.3.1. China
    • 7.4.3.2. Japan
    • 7.4.3.3. Taiwan
    • 7.4.3.4. South Korea
    • 7.4.3.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 8.1. Major Players and Strategy Analysis
• 8.2. Market Share Analysis
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations

9. COMPANY PROFILES

• 9.1. ROHM SEMICONDUCTOR
• 9.2. Wolfspeed, Inc.
• 9.3. STMicroelectronics
• 9.4. Infineon Technologies AG
• 9.5. Mitsubishi Electric Corporation
• 9.6. Semikron Danfoss
• 9.7. Texas Instruments
• 9.8. Analog Devices, Inc.
• 9.9. Navitas Semiconductor
• 9.10. Microchip Technology Inc.