宽能带隙功率半导体市场：2025-2030 年预测

宽能带隙(WBG) 功率半导体市场价值在 2025 年达到 5,135,529,000 美元，复合年增长率为 15.91%，到 2030 年市场规模将达到 10,745,033,000 美元。

宽能带隙半导体在以分子物种改质后，表现出独特的光学和电子特性。这些元件比电力电子领域的硅基元件更小、更快、更可靠、更有效率。 WBG功率半导体独特的科学技术特性使其在高性能光电和电子应用中越来越受欢迎。随着对家用电子电器和快速充电等相关技术的需求不断增长，WBG半导体市场预计将大幅扩张。该设备在高频下会改变其物理特性，而其化学和机械特性则可用于光电应用。高性能和新颖特性的结合开闢了新的机会并为未来的市场成长铺平了道路。

市场趋势：

• 碳化硅 (SiC) 和氮化镓 (GaN) 材料的采用日益增多

宽能带隙(WBG) 和超宽能带隙(WBG) 电力电子半导体，例如碳化硅 (SiC) 和氮化镓 (GaN)，正在彻底改变电力电子产业。这些先进材料比传统的硅基产品具有更优异的性能和效率。 WBG 半导体的最新进展主要集中在材料品质、装置设计和製造流程的改进。学术界和工业界的共同努力促进了高品质 SiC 和 GaN基板的开发、结晶生长技术的进步和製造方法的改进。这些创新提高了材料性能、增加了装置产量比率并降低了製造成本，使得WBG半导体更具商业性可行性。

碳化硅的带隙能量约为 3.3 eV，而硅的带隙能量为 1.1 eV，因此碳化硅是研究最广泛、应用最广泛的 WBG 材料之一。基于 SiC 的功率元件具有显着的优势，包括更低的传导和开关损耗、更高的耐高温性和更高的整体效率。同样，带隙能量约为3.4 eV的GaN由于其高击穿电压、快的开关速度、低导通电阻等优异的性能特点而备受关注。

• 对高效电力电子产品的需求不断增加

电动车 (EV)、可再生能源和通讯等领域对高效能电力电子元件的需求日益增长，这是 WBG 半导体市场的主要驱动力。 SiC 特别适用于电动车逆变器和快速充电器等高压应用，而 GaN 的高频开关能力使其成为 5G基地台和低压电源的理想选择。随着各行业逐渐转向更节能的解决方案，向 WBG 半导体的转变变得至关重要。此外，晶圆品质和基板製造的进步正在推动成本降低和能力增强，从而实现 WBG 半导体的大规模市场应用。这种快速成长凸显了宽频隙半导体在全球转型为低功耗设计过程中核心技术的角色。

• 预测期内美洲将出现显着成长

以美国为首的美洲地区，由于各行业对节能电子设备的需求不断增加，WBG半导体市场正呈指数级增长。人们对电动车的日益关注以及向可再生能源的转变进一步推动了对 WBG 功率半导体的需求。

例如，家用电子电器、汽车和可再生能源应用对节能设备的需求是一个主要的成长要素。与传统的硅基元件相比，SiC 和 GaN 等 WBG 半导体元件具有更优异的性能和效率。此外，人们对电动车和可再生能源的日益关注正在加速 WBG 功率半导体的采用，从而扩大美国的市场。

报告中介绍的主要企业包括 ROHM Semiconductor、Wolfspeed、义法半导体、英飞凌科技股份公司、三菱电机、赛米控丹佛斯和德克萨斯。

本报告的主要优点

• 深刻分析：获得涵盖主要地区和新兴地区的深入市场洞察，重点关注客户群、政府政策和社会经济因素、消费者偏好、垂直行业和其他子区隔。
• 竞争格局：了解全球主要企业所采用的策略策略，并了解正确策略带来的潜在市场渗透。
• 市场趋势和驱动因素：探索动态因素和关键市场趋势以及它们将如何影响市场的未来发展。
• 可行的建议：利用洞察力进行策略决策，在动态环境中开闢新的业务流和收益。
• 受众广泛：对于新兴企业、研究机构、顾问公司、中小企业和大型企业都有益且具有成本效益。

它有什么用途？

产业和市场考量、商业机会评估、产品需求预测、打入市场策略、地理扩张、资本支出决策、法律规范与影响、新产品开发、竞争影响

研究范围

• 2022 年至 2024 年的历史数据和 2025 年至 2030 年的预测数据
• 成长机会、挑战、供应链前景、法律规范与趋势分析
• 竞争定位、策略和市场占有率分析
• 收益成长和预测分析（包括国家在内的细分市场和地区）
• 公司概况（策略、产品、财务资讯、主要趋势等）

目录

第一章 引言

• 市场概览
• 市场定义
• 研究范围
• 市场区隔
• 货币
• 先决条件
• 基准年和预测年时间表
• 相关利益者的主要利益

第二章调查方法

• 研究设计
• 研究过程

第三章执行摘要

• 主要发现

第四章 市场动态

• 市场驱动因素
• 市场限制
• 波特五力分析
• 产业价值链分析
• 分析师观点

第五章宽能带隙功率半导体市场（依材料）

• 介绍
• 碳化硅
• 氮化镓
• 钻石
• 氧化镓
• 氮化铝

第六章宽能带隙功率半导体市场（依应用）

• 介绍
• 资料中心
• 可再生能源发电
• 混合动力汽车和电动车
• 马达驱动

第七章宽能带隙功率半导体市场（按区域）

• 美洲
  • 美国
• 欧洲、中东和非洲
  • 德国
  • 荷兰
  • 其他的
• 亚太地区
  • 中国
  • 日本
  • 台湾
  • 韩国
  • 其他的

第八章竞争格局及分析

• 主要企业和策略分析
• 市场占有率分析
• 合併、收购、协议和合作
• 竞争仪錶板

第九章 公司简介

• ROHM Semiconductor
• Wolfspeed, Inc.
• STMicroelectronics
• Infineon Technologies AG
• Mitsubishi Electric Corporation
• Semikron Danfoss
• Texas Instruments
• Analog Devices, Inc.
• Navitas Semiconductor
• Microchip Technology Inc.

The wide-bandgap power semiconductor market is evaluated at US$5,135.529 million in 2025, growing at a CAGR of 15.91%, reaching the market size of US$10,745.033 million by 2030.

Wide-bandgap (WBG) semiconductors, when modified with molecular species, exhibit distinctive optical and electronic properties. These components are characterized by their smaller size, faster operation, enhanced reliability, and greater efficiency than silicon-based counterparts in power electronics. The unique scientific and technological attributes of WBG power semiconductors have led to their increasing popularity in high-performance optoelectronic and electronic devices. With the rising demand for consumer electronics and related technologies like fast charging, the market for WBG semiconductors is expected to expand significantly. The devices transform their physical characteristics at high frequencies, while their chemical and mechanical features find applications in optoelectronic uses. The combination of high performance and novel properties is opening new opportunities and paving the way for the market's growth in the years ahead.

Market Trends:

• Increasing Adoption of Silicon Carbide (SiC) and Gallium Nitride (GaN) Materials

Wide and ultrawide bandgap (WBG) power electronic semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), are revolutionizing the power electronics industry. These advanced materials outperform traditional silicon-based products, offering superior performance and efficiency. Recent advancements in WBG semiconductors have focused on improving material quality, device design, and manufacturing processes. Collaborative efforts between academia and industry have led to the development of high-quality SiC and GaN substrates, advancements in crystal growth techniques, and refined production methods. These innovations have enhanced material performance, increased device yields, and reduced manufacturing costs, making WBG semiconductors more commercially viable.

SiC, with a bandgap energy of approximately 3.3 electron volts (eV) compared to silicon's 1.1 eV, is one of the most extensively researched and widely available WBG materials. SiC-based power devices offer significant advantages, including lower conduction and switching losses, higher temperature tolerance, and improved overall efficiency. Similarly, GaN, with a bandgap energy of around 3.4 eV, has gained considerable attention for its exceptional performance characteristics, such as high breakdown voltages, fast switching speeds, and low on-resistance.

• Rising Demand for High-Efficiency Power Electronics

The growing need for high-efficiency power electronics in sectors like electric vehicles (EVs), renewable energy, and telecommunications is a key driver of the WBG semiconductors market. SiC is particularly favored for high-voltage applications, such as EV inverters and fast chargers, while GaN's high-frequency switching capabilities are making it ideal for 5G base stations and low-voltage power supplies. The shift toward WBG semiconductors is becoming essential as industries converge toward energy-efficient solutions. Additionally, advancements in wafer quality and substrate production are reducing costs and enhancing functionality, enabling mass-market adoption of WBG semiconductors. This rapid growth underscores their role as a central technology in the global transition to low-power electronics.

• Americas Experiencing Significant Growth in the Forecast Period

The Americas, particularly the United States, are witnessing exponential growth in the WBG semiconductors market, driven by the increasing demand for energy-efficient electronic devices across various industries. The growing focus on electric vehicles and the transition to renewable energy sources are further boosting the demand for WBG power semiconductors.

For example, the need for energy-efficient devices in consumer electronics, automotive, and renewable energy applications is a major growth factor. WBG semiconductors, such as SiC and GaN components, offer superior performance and efficiency compared to traditional silicon-based devices. Additionally, the rising emphasis on EVs and renewable energy is accelerating the adoption of WBG power semiconductors, expanding the market in the United States and beyond.

Some of the major players covered in this report include ROHM Semiconductor, Wolfspeed, Inc., STMicroelectronics, Infineon Technologies AG, Mitsubishi Electric Corporation, Semikron Danfoss, Texas Instruments, among others.

Key Benefits of this Report:

• Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
• Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
• Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
• Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
• Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

• Historical data from 2022 to 2024 & forecast data from 2025 to 2030
• Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
• Competitive Positioning, Strategies, and Market Share Analysis
• Revenue Growth and Forecast Assessment of segments and regions including countries
• Company Profiling (Strategies, Products, Financial Information, and Key Developments among others)

Wide-Bandgap Power Semiconductor Market is analyzed into the following segments:

By Material

• Silicon Carbide
• Gallium Nitride
• Diamond
• Gallium Oxide
• Aluminium Nitride
• By Application
• Data Centers
• Renewable Energy Generation
• Hybrid and Electric Vehicles
• Motor Drives

By Geography

• Americas
• US
• Europe, the Middle East, and Africa
• Germany
• Netherlands
• Others
• Asia Pacific
• China
• Japan
• Taiwan
• South Korea
• Others

TABLE OF CONTENTS

1. INTRODUCTION

• 1.1. Market Overview
• 1.2. Market Definition
• 1.3. Scope of the Study
• 1.4. Market Segmentation
• 1.5. Currency
• 1.6. Assumptions
• 1.7. Base and Forecast Years Timeline
• 1.8. Key Benefits to the Stakeholder

2. RESEARCH METHODOLOGY

• 2.1. Research Design
• 2.2. Research Processes

3. EXECUTIVE SUMMARY

• 3.1. Key Findings

4. MARKET DYNAMICS

• 4.1. Market Drivers
• 4.2. Market Restraints
• 4.3. Porter's Five Forces Analysis
  • 4.3.1. Bargaining Power of Suppliers
  • 4.3.2. Bargaining Power of Buyers
  • 4.3.3. Threat of New Entrants
  • 4.3.4. Threat of Substitutes
  • 4.3.5. Competitive Rivalry in the Industry
• 4.4. Industry Value Chain Analysis
• 4.5. Analyst View

5. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY MATERIAL

• 5.1. Introduction
• 5.2. Silicon Carbide
• 5.3. Gallium Nitride
• 5.4. Diamond
• 5.5. Gallium Oxide
• 5.6. Aluminium Nitride

6. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY APPLICATION

• 6.1. Introduction
• 6.2. Data Centers
• 6.3. Renewable Energy Generation
• 6.4. Hybrid and Electric Vehicles
• 6.5. Motor Drives

7. WIDE-BANDGAP POWER SEMICONDUCTOR MARKET BY GEOGRAPHY

• 7.1. Americas
  • 7.1.1. US
• 7.2. Europe, Middle East, and Africa
  • 7.2.1. Germany
  • 7.2.2. Netherland
  • 7.2.3. Others
• 7.3. Asia Pacific
  • 7.3.1. China
  • 7.3.2. Japan
  • 7.3.3. Taiwan
  • 7.3.4. South Korea
  • 7.3.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

• 8.1. Major Players and Strategy Analysis
• 8.2. Market Share Analysis
• 8.3. Mergers, Acquisitions, Agreements, and Collaborations
• 8.4. Competitive Dashboard

9. COMPANY PROFILES

• 9.1. ROHM Semiconductor
• 9.2. Wolfspeed, Inc.
• 9.3. STMicroelectronics
• 9.4. Infineon Technologies AG
• 9.5. Mitsubishi Electric Corporation
• 9.6. Semikron Danfoss
• 9.7. Texas Instruments
• 9.8. Analog Devices, Inc.
• 9.9. Navitas Semiconductor
• 9.10. Microchip Technology Inc.