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市场调查报告书
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1878118

硅基氮化镓 (GaN) 市场 - 2025 年至 2030 年预测

Gallium Nitride (GaN)-on-Silicon Market - Forecasts from 2025 to 2030
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 143 Pages | 商品交期: 最快1-2个工作天内

价格
简介目录

预计硅基氮化镓 (GaN) 市场将从 2025 年的 11.52 亿美元成长到 2030 年的 31.91 亿美元，复合年增长率为 22.59%。

硅基氮化镓（GaN-on-silicon）技术代表了功率和射频（RF）电子装置架构的根本性变革。此技术充分利用了氮化镓卓越的宽能带隙特性（例如，高击穿电压、优异的电子迁移率和快速开关速度），同时受益于成熟、高产能且经济高效的硅半导体基础设施。这种异质整合技术直接解决了传统硅元件的效能瓶颈，显着提升了系统小型化、能源效率和整体成本。因此，硅基氮化镓（GaN-on-silicon）技术有望成为下一代功率转换系统和射频通讯架构的关键基础技术。

核心市场动态：驱动因素与限制因素

市场扩张的主要驱动力是全球对电子系统能源效率提升和功率密度提高的系统性需求。高电子移动性电晶体(HEMT) 的固有优势，例如低导通电阻和高频开关能力，直接推动了多个高成长领域的需求。例如，人工智慧 (AI) 资料中心日益增长的电力需求，使得电源容量远远超过传统伺服器的承载能力。氮化镓硅基 (GaN-OSi) 功率积体电路 (IC) 为在紧凑型伺服器机箱内实现所需的功率密度和效率提供了关键解决方案。同时，汽车产业向电动车 (EV) 的转型，也推动了车载充电器和 DC-DC 转换器等设备对更小、更轻、更有效率的电力电子装置的需求，而氮化镓的优势能够直接帮助延长车辆续航里程并优化温度控管。

然而，广泛应用的主要挑战在于基础材料科学和可靠性检验。 GaN外延层与硅基基板之间的晶格和热失配仍然是一个主要的技术障碍。这种失配需要开发复杂的缓衝层级构造，这会影响製造产量比率，并最终限制装置的耐压性。这些技术限制导致初始组件成本较高，并为可靠性至关重要的高压工业应用设定了进入门槛。

供应链、製造和监管状况

氮化镓（GaN）硅基元件供应链采用双管齐下的模式，涵盖传统整合元件製造商（IDM）和无晶圆厂/代工厂生态系统。生产分布于全球，充分利用了成熟的硅製造群。此供应链高度依赖特定供应商提供的金属有机化学气相沉积（MOCVD）反应器和专有前驱体材料，这可能会造成瓶颈，尤其是在向更大晶圆直径过渡的过程中。虽然硅基基板供应成熟，但GaN元件的封装和测试需要先进的技术来确保其高频性能。

政府法规透过强制推行更高的能源效率标准，直接推动市场需求。例如，欧盟的生态设计指令为能源相关产品设定了最低能源效率要求，有效鼓励製造商采用高效的氮化镓（GaN）硅基功率装置以符合标准。在美国，《晶片与科学法案》促进了国内半导体製造和研发，包括宽能带隙材料，刺激了对用于战略和国防应用的GaN技术的投资。中国的「中国製造2025」产业政策明确瞄准宽能带隙半导体主导，刺激了国内需求，并加速了从消费电子产品到5G基础设施等广泛应用领域的本土製造能力建设。

细分市场和区域分析

功率开关元件领域是主要需求来源，这主要得益于氮化镓（GaN）的高频开关特性，该特性使得功率转换级可以使用更小更轻的被动元件，从而显着降低资料中心和通讯设备电源的尺寸和重量。此外，消费性电子市场对紧凑型快速充电解决方案的需求也完全依赖硅基氮化镓（GaN-on-silicone）开关所实现的高功率密度。

向200毫米晶圆製造的过渡标誌着市场的关键转折点。从150毫米平台到200毫米平台的转变显着增加了可用晶粒面积，从而大幅降低了单一晶粒的加工成本。这种规模经济对于氮化镓（GaN）在对成本高度敏感的大批量市场（例如大众消费电源适配器和工业电源）保持竞争力至关重要，因为在这些市场中，与硅的价格差异历来都是限制GaN发展的障碍。

从区域来看，需求模式差异显着。美国市场以高性能资料中心、通讯和国防领域的强劲需求为特征，相关政策倡议推动了对安全可靠的国内供应链的需求。作为欧洲工业中心，德国的汽车和工业自动化产业需求旺盛，这得益于其法规环境以及对系统级效率和总体拥有成本 (TCO) 的工程设计重点。中国是全球最大的单一市场，无论从供需量来看都是如此。其国家主导的产业政策积极推动市场发展，为其庞大的国内製造业基地带来了对高产量、低成本氮化镓 (GaN) 硅基晶圆的强劲需求。

竞争环境

竞争格局错综复杂，既有规模庞大、业务多元化的垂直整合半导体製造商 (IDM)，也有灵活敏捷的纯氮化镓 (GaN) 技术公司。竞争的关键领域包括性价比、大直径基板的製造产量比率以及整合解决方案的开发。

  • 英飞凌科技作为一家整合装置製造商，在功率半导体领域拥有深厚的专业知识和製造规模。公司策略着重于全面的材料组合以及在大直径晶圆上推进氮化镓（GaN）製造技术的进步，以实现大众市场渗透所需的成本目标。
  • Navitas Semiconductor是纯GaN半导体专家，其策略重点是单晶片整合。其GaNFast™功率IC将GaN功率、驱动和控制电路整合到单一晶片上，简化了客户设计，并在快速充电和资料中心等市场中最大限度地提高了系统级优势。
  • Aros Semiconductors是专注于上游领域的技术授权专家。该公司致力于解决在大直径硅片上生长高品质GaN外延层的难题，使其合作伙伴能够利用标准硅晶圆厂进行生产製造，这对于microLED显示器等新兴应用尤为重要。

氮化镓硅基（GaN-on-Silicon）市场正处于明显的成长轨道上，其成长动力主要来自能源效率和功率密度需求的不可逆转的趋势。这项技术的广泛应用取决于外延製程的持续创新，以提高大尺寸晶圆的产量比率，以及成功实现与现有硅基解决方案成本相当的策略。

本报告的主要优势：

  • 深入分析：提供对主要和新兴地区的深入市场洞察，重点关注客户群、政府政策和社会经济因素、消费者偏好、行业垂直领域和其他细分市场。
  • 竞争格局：了解全球主要企业的策略倡议，并了解透过正确的策略实现市场渗透的潜力。
  • 市场驱动因素与未来趋势：探讨影响市场的动态因素和关键趋势及其对未来市场发展的影响。
  • 可操作的建议：利用这些见解，在动态环境中做出策略决策，并开拓新的商机和收入来源。
  • 受众广泛：适用于Start-Ups、研究机构、顾问公司、中小企业和大型企业，且经济实惠。

企业使用我们的报告的目的是什么？

产业与市场分析、机会评估、产品需求预测、打入市场策略、地理扩张、资本投资决策、法规结构及影响、新产品开发、竞争情报

报告范围：

  • 2022年至2024年的历史数据和2025年至2030年的预测数据
  • 成长机会、挑战、供应链前景、法规结构与趋势分析
  • 竞争定位、策略和市场占有率分析
  • 按业务板块和地区分類的收入成长和预测评估，包括国家/地区
  • 公司概况（策略、产品、财务资讯、关键发展等）

硅上氮化镓 (GaN) 市场的市场区隔

  • 按晶圆尺寸
  • 150 mm
  • 200 mm
  • 透过使用
  • LED照明
  • 电源开关装置
  • 射频电子
  • 按地区
  • 北美洲（美国、加拿大、墨西哥）
  • 南美洲（巴西、阿根廷等）
  • 欧洲（德国、法国、英国、西班牙等）
  • 中东和非洲（沙乌地阿拉伯、阿拉伯联合大公国等）
  • 亚太地区（中国、印度、日本、韩国、印尼、泰国、世界其他地区）

目录

第一章执行摘要

第二章 市场概览

  • 市场概览
  • 市场定义
  • 调查范围

第二章 4. 市场区隔

第三章 商业情境

  • 市场驱动因素
  • 市场限制
  • 市场机会
  • 波特五力分析
  • 产业价值链分析
  • 政策与法规
  • 策略建议

第四章 技术展望

5. 硅基氮化镓 (GaN) 晶圆尺寸市场

  • 介绍
  • 150 mm
  • 200 mm

6. 依应用分類的硅基氮化镓 (GaN) 市场

  • 介绍
  • LED照明
  • 电源开关装置
  • 高频电子设备

7. 硅基氮化镓 (GaN) 市场（按地区划分）

  • 介绍
  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 南美洲
    • 巴西
    • 阿根廷
    • 其他的
  • 欧洲
    • 德国
    • 法国
    • 英国
    • 西班牙
    • 其他的
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 其他的
  • 亚太地区
    • 中国
    • 印度
    • 日本
    • 韩国
    • 印尼
    • 泰国
    • 其他的

第八章 竞争格局与分析

  • 主要企业和策略分析
  • 市占率分析
  • 合併、收购、协议和合作
  • 竞争对手仪錶板

第九章：公司简介

  • Plessey
  • MaCOM
  • HOMRAY MATERIAL TECHNOLOGY
  • ALLOS Semiconductors
  • CoorsTek Inc.
  • Infineon Technologies
  • EPC
  • Qorvo
  • Wolfspeed
  • Navitas Semiconductor

第十章附录

  • 货币
  • 先决条件
  • 基准年和预测年时间表
  • 相关人员的主要收益
  • 调查方法
  • 简称
简介目录
Product Code: KSI061612942

Gallium Nitride (GaN)-On-Silicon Market is expected to grow at a 22.59% CAGR, reaching USD 3.191 billion in 2030 from USD 1.152 billion in 2025.

Gallium Nitride on Silicon (GaN-on-Silicon) technology represents a fundamental architectural shift within the power and radio frequency (RF) electronics sectors. This approach leverages the superior wide bandgap properties of GaN-including high breakdown voltage, exceptional electron mobility, and fast switching speeds-while being manufactured on the mature, high-volume, and cost-effective silicon semiconductor infrastructure. This heterogeneous integration directly addresses the performance limitations of conventional silicon, enabling significant advancements in system miniaturization, energy efficiency, and overall cost reduction. Consequently, GaN-on-Silicon is positioned as a critical enabling technology for next-generation power conversion systems and high-frequency communication architectures.

Core Market Dynamics: Drivers and Constraints

Market expansion is primarily driven by the global, systemic imperative for enhanced energy efficiency and increased power density across electronic systems. The intrinsic advantages of GaN High Electron Mobility Transistors (HEMTs), such as low on-resistance and high-frequency switching capability, are creating direct demand across several high-growth sectors. The escalating power requirements of artificial intelligence (AI) data centers, for instance, necessitate power supplies that far exceed the capabilities of traditional servers. GaN-on-Silicon power integrated circuits (ICs) provide a critical pathway to achieving the requisite power density and efficiency within compact server form factors. Simultaneously, the automotive industry's transition to electric vehicles (EVs) fuels demand for smaller, lighter, and more efficient power electronics in on-board chargers and DC-DC converters, where GaN's advantages directly contribute to extended vehicle range and optimized thermal management.

A significant challenge to widespread adoption revolves around fundamental material science and reliability verification. The lattice and thermal mismatch between the GaN epitaxial layer and the silicon substrate remains a primary technical obstacle. This mismatch necessitates the development of complex buffer layer structures, which can impact manufacturing yields and ultimately limit the voltage-handling capability of the devices. These technical constraints contribute to higher initial component costs, creating a barrier for entry into highly reliability-sensitive, high-voltage industrial applications.

Supply Chain, Manufacturing, and Regulatory Landscape

The GaN-on-Silicon supply chain operates on a dual-track model, encompassing traditional Integrated Device Manufacturers (IDMs) and a fabless/foundry ecosystem. Production is globally distributed, leveraging established silicon manufacturing clusters. A critical dependency exists on a specialized group of suppliers for Metal-Organic Chemical Vapor Deposition (MOCVD) reactors and proprietary precursor materials, creating potential chokepoints, especially during the transition to larger wafer diameters. While the silicon substrate supply is mature, the packaging and testing of GaN devices require advanced, specialized capabilities to manage high-frequency performance.

Government regulations are acting as direct demand levers by mandating higher energy efficiency standards. The European Union's Ecodesign Directive, for example, sets minimum efficiency requirements for energy-related products, effectively compelling manufacturers to adopt high-efficiency GaN-on-Silicon power devices to comply. In the United States, the CHIPS and Science Act promotes domestic semiconductor manufacturing and research, including wide bandgap materials, thereby stimulating investment in GaN technology for strategic and defense applications. China's "Made in China 2025" industrial policy explicitly targets wide bandgap semiconductor dominance, driving massive internal demand and accelerating local production capacity for applications ranging from consumer electronics to 5G infrastructure.

Segmental and Geographical Analysis

The power switching device segment is a primary demand center, driven by GaN's ability to operate at high switching frequencies. This characteristic allows for the use of smaller, lighter passive components in power conversion stages, leading to a radical reduction in the size and weight of power supply units for data centers and telecommunications equipment. Furthermore, the consumer electronics market's push for compact, fast-charging solutions relies entirely on the high-power density enabled by GaN-on-Silicon switches.

The transition to 200 mm wafer manufacturing is a critical inflection point for the market. Moving from 150 mm to 200 mm platforms yields a substantial increase in usable die area, which dramatically reduces the processing cost per individual die. This economy of scale is paramount for enabling GaN to compete in high-volume, cost-sensitive markets like mass-market consumer power adapters and industrial power supplies, where the price differential with silicon has been a historical barrier.

Geographically, demand patterns are distinct. The United States market is characterized by strong demand from high-performance data centers, telecommunications, and defense sectors, with policy initiatives reinforcing the need for a secure, domestic supply chain. Germany, as a European industrial hub, exhibits robust demand from the automotive and industrial automation sectors, driven by a regulatory environment and an engineering focus on system-level efficiency and total cost of ownership. China represents the largest single source of both supply and demand, with its market aggressively driven by state-backed industrial policy, creating intense demand for high-volume, cost-competitive GaN-on-Silicon wafers for its vast domestic manufacturing base.

Competitive Environment

The competitive landscape is stratified, featuring large, diversified IDMs competing with agile, pure-play GaN technology companies. The central battlegrounds are cost-per-performance, manufacturing yield on large-diameter substrates, and the development of integrated solutions.

  • Infineon Technologies leverages its deep expertise in power semiconductors and manufacturing scale as an IDM. The company's strategy involves a comprehensive materials portfolio and a focus on advancing GaN manufacturing on larger wafer diameters to achieve cost targets essential for high-volume market penetration.
  • Navitas Semiconductor, as a pure-play GaN company, strategically focuses on monolithic integration. Its GaNFast(TM) power ICs combine GaN power, drive, and control circuits into a single chip, simplifying customer design and maximizing system-level benefits in markets like fast charging and data centers.
  • ALLOS Semiconductors operates in the upstream segment as a technology licensing specialist. Its strategy is centered on solving the epitaxial challenges of growing high-quality GaN on large-diameter silicon wafers, enabling its partners to utilize standard silicon fabs for manufacturing, which is particularly critical for emerging applications like micro-LED displays.

The GaN-on-Silicon market is on a clear trajectory of growth, fueled by irreversible trends in energy efficiency and power density requirements. The technology's path to ubiquity is contingent upon continued innovation in epitaxial processes to improve yields on larger wafers and the successful execution of strategies to achieve cost parity with incumbent silicon solutions.

Key Benefits of this Report:

  • Insightful Analysis: Gain detailed market insights covering major as well as emerging geographical regions, focusing on customer segments, government policies and socio-economic factors, consumer preferences, industry verticals, and other sub-segments.
  • Competitive Landscape: Understand the strategic maneuvers employed by key players globally to understand possible market penetration with the correct strategy.
  • Market Drivers & Future Trends: Explore the dynamic factors and pivotal market trends and how they will shape future market developments.
  • Actionable Recommendations: Utilize the insights to exercise strategic decisions to uncover new business streams and revenues in a dynamic environment.
  • Caters to a Wide Audience: Beneficial and cost-effective for startups, research institutions, consultants, SMEs, and large enterprises.

What do businesses use our reports for?

Industry and Market Insights, Opportunity Assessment, Product Demand Forecasting, Market Entry Strategy, Geographical Expansion, Capital Investment Decisions, Regulatory Framework & Implications, New Product Development, Competitive Intelligence

Report Coverage:

  • Historical data from 2022 to 2024 & forecast data from 2025 to 2030
  • Growth Opportunities, Challenges, Supply Chain Outlook, Regulatory Framework, and Trend Analysis
  • Competitive Positioning, Strategies, and Market Share Analysis
  • Revenue Growth and Forecast Assessment of segments and regions including countries
  • Company Profiling (Strategies, Products, Financial Information, and Key Developments among others.

Gallium Nitride (GaN)-On-Silicon Market Segmentation

  • By Wafer Size
  • 150 mm
  • 200 mm
  • By Application
  • LED Lighting
  • Power Switching Device
  • RF Electronics
  • By Geography
  • North America (USA, Canada, Mexico)
  • South America (Brazil, Argentina, Others)
  • Europe (Germany, France, United Kingdom, Spain, Others)
  • Middle East and Africa (Saudi Arabia, UAE, Others)
  • Asia Pacific (China, India, Japan, South Korea, Indonesia, Thailand, Others)

TABLE OF CONTENTS

1. EXECUTIVE SUMMARY

2. MARKET SNAPSHOT

  • 2.1. Market Overview
  • 2.2. Market Definition
  • 2.3. Scope of the Study

2.4. Market Segmentation

3. BUSINESS LANDSCAPE

  • 3.1. Market Drivers
  • 3.2. Market Restraints
  • 3.3. Market Opportunities
  • 3.4. Porter's Five Forces Analysis
  • 3.5. Industry Value Chain Analysis
  • 3.6. Policies and Regulations
  • 3.7. Strategic Recommendations

4. TECHNOLOGICAL OUTLOOK

5. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY WAFER SIZE

  • 5.1. Introduction
  • 5.2. 150 mm
  • 5.3. 200 mm

6. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY APPLICATION

  • 6.1. Introduction
  • 6.2. LED Lighting
  • 6.3. Power Switching Device
  • 6.4. RF Electronics

7. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY GEOGRAPHY

  • 7.1. Introduction
  • 7.2. North America
    • 7.2.1. USA
    • 7.2.2. Canada
    • 7.2.3. Mexico
  • 7.3. South America
    • 7.3.1. Brazil
    • 7.3.2. Argentina
    • 7.3.3. Others
  • 7.4. Europe
    • 7.4.1. Germany
    • 7.4.2. France
    • 7.4.3. United Kingdom
    • 7.4.4. Spain
    • 7.4.5. Others
  • 7.5. Middle East and Africa
    • 7.5.1. Saudi Arabia
    • 7.5.2. UAE
    • 7.5.3. Others
  • 7.6. Asia Pacific
    • 7.6.1. China
    • 7.6.2. India
    • 7.6.3. Japan
    • 7.6.4. South Korea
    • 7.6.5. Indonesia
    • 7.6.6. Thailand
    • 7.6.7. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 8.1. Major Players and Strategy Analysis
  • 8.2. Market Share Analysis
  • 8.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 8.4. Competitive Dashboard

9. COMPANY PROFILES

  • 9.1. Plessey
  • 9.2. MaCOM
  • 9.3. HOMRAY MATERIAL TECHNOLOGY
  • 9.4. ALLOS Semiconductors
  • 9.5. CoorsTek Inc.
  • 9.6. Infineon Technologies
  • 9.7. EPC
  • 9.8. Qorvo
  • 9.9. Wolfspeed
  • 9.10. Navitas Semiconductor

10. APPENDIX

  • 10.1. Currency
  • 10.2. Assumptions
  • 10.3. Base and Forecast Years Timeline
  • 10.4. Key Benefits for the Stakeholders
  • 10.5. Research Methodology
  • 10.6. Abbreviations