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市场调查报告书
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1437967

RF GaN：市场占有率分析、产业趋势与统计、成长预测（2024-2029）

RF GaN - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)
出版日期: | 出版商: Mordor Intelligence | 英文 127 Pages | 商品交期: 2-3个工作天内

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简介目录

RF GaN市场规模预计到2024年为17亿美元，预计到2029年将达到40.3亿美元，在预测期内（2024-2029年）复合年增长率为18.76%。

RF GaN 市场

由于在即时连接的各种设备和应用中使用 RF GaN 的优势，预计更多行业将使用物联网 (IoT) 技术，从而推动市场成长。不断发展的 GaN 技术使 GaN 能够在更复杂的应用中支援更高的频率，例如相位阵列、雷达、有线电视基地台收发器 (CATV)、甚小孔径终端 (VSAT) 和国防通讯，使之成为可能。

主要亮点

  • RF GaN 在无线基础设施中发挥关键作用，可提高效率并增加频宽以支援不断提高的资料传输速率。 RF GaN 市场主要由 5G 的日益普及和无线通讯的进步推动。通讯业者也可能受益于 GaN 功率电晶体的增加使用。
  • 电动车中越来越多地采用射频氮化镓也是推动该市场需求的关键因素之一。碳化硅元件用于电动巴士、计程车、卡车和小客车的车载电池充电器。此外，越来越多有利于电动车市场的政府法律正在刺激对射频氮化镓市场的需求。
  • 开发自动驾驶汽车和无人机所需的基础设施是推动 RF GaN 技术需求的另一个因素。因此，随着各种应用（尤其是军事和国防）自动驾驶汽车和无人机的日益普及和开发，预计将在预测期内进一步增加 RF GaN 装置的采用。
  • GaN 固有的材料优势伴随着一些相关的製造挑战，包括成本和优化装置加工和封装。必须解决其他问题，例如电荷捕获和电流崩坏，以增加这些设备的采用。儘管基于射频GaN的装置（性能和产量比率）已显着提高，但阻碍氮化镓/碳化硅（GaN-on-SiC）引入主流应用（例如无线通讯基地台）的障碍仍然存在。
  • COVID-19感染疾病影响了供应线和通讯业。这大大阻碍了5G在通讯领域的普及。在这场危机期间，消费者预计将继续使用行动电话，但大多数人可能无法进一步投资于这项仍处于起步阶段的技术。
  • 资料消费量的快速成长正在推动商业网路的成长，并鼓励网路供应商采用4G和5G等下一代网路。根据思科视觉网路指数，全球行动资料流量预计复合年增长率为 46%，到 ​​2022 年将达到每月 77.5Exabyte。
  • 世界各地的组织都在创新新产品并扩展业务。例如，创新射频和微波功率解决方案供应商 Integra 于 2022 年 6 月宣布开始向美国和欧洲的客户出货突破性的 100V 射频 GaN 技术。该公司还扩展了其 100V RF GaN产品系列，推出了七款新产品，在单个晶体管中提供高达 5kW 的功率水平，适用于航空电子设备、定向能、电子战、雷达和科学市场领域。我们还宣布了这一点。

高频氮化镓市场趋势

5G落地进展带动通讯基础设施领域强劲需求

  • 电讯业是全球数位化的主要推动者，也是市场环境正在全面变化的产业，被认为是数位转型技术的主要用户。电讯业对互通性和技术的投资促进了全球经济中资本和资讯流动的模式转移，并为跨产业全新经营模式的出现奠定了基础。
  • 5G技术预计将彻底改变各种宽频服务领域，并实现各个最终用户产业的连接。推动 GaN市场占有率的主要因素是行动订阅量、线上视讯内容串流、5G 基础设施以及使用 5G 的各种物联网应用的增加。 5G预计将支援跨多种场景的多种业务和相关业务需求。
  • 目前，5G行动用户数为42万，预计到2022年将达4亿人。随着全球5G技术部署的大幅增加，对RF GaN技术的需求预计将增加。
  • 2022年5月，义法半导体（ST）和通讯、工业、国防和资料中心产业的半导体产品供应商MACOM Technology Solutions Holdings（MACOM）宣布推出射频硅基氮化镓（RF GaN-on-Si） Si ). 生产已宣布。原型。凭藉这一成功，ST和MACOM将继续合作并扩大双方的关係。 ST 和 MACOM 正在开发的 GaN-on-Si 技术预计在整合到标准半导体製程流程时将提供具有竞争力的性能和显着的规模经济。
  • Qorvo 是为 2G、3G 和 4G基地台製造商提供射频解决方案的供应商之一。我们在支援低于 6 GHz 和厘米波/毫米波无线基础设施开发的市场中处于独特的地位。 Qorvo主要投资涵盖3.5、4.8、28、39GHz等5G相关频宽的产品解决方案来服务市场，以实现5G。
  • 5G 基础设施需要密集且小型的天线阵列，这给射频 (RF) 系统功率和热管理带来了重大挑战。 GaN 装置具有改进的宽频性能、效率和功率密度，为解决这些挑战提供了更紧凑的解决方案的潜力。

亚太地区预计将出现显着成长

  • 亚太离散半导体产业以中国、日本、台湾和韩国为主导，约占全球离散半导体市场的65%。相较之下，越南、泰国、马来西亚和新加坡等国家则在该地区占据市场主导地位。
  • 印度电子与半导体协会预计，到2025年，印度半导体元件市场规模预计将达到323.5亿美元，复合年增长率为10.1%（2018-2025年）。该国是全球研发中心的重要目的地。因此，印度政府正在进行的「印度製造」计画预计将为半导体市场带来大量投资。印度政府的此类措施将利用 RF GaN 市场。
  • 2022年2月，氮化镓积体电路（IC）供应商纳微半导体宣布参加中国国际金融公司（CICC）投资者大会。该公司专有的 GaN 功率 IC 将 GaN 功率和 GaN 驱动、控制和保护整合在单一 SMT 封装中。这种参与将利用该地区的 GaN 市场。
  • 投资者对开发支援 5G 技术的基础设施的兴趣增加，预计将增加全部区域对 RF GaN 的需求。例如，根据GSMA的数据，到2025年，亚太地区的行动电话电信商预计将花费超过4,000亿美元，其中3,310亿美元将用于5G部署。
  • 中国射频氮化镓公司的成长是该国从製造业经济转型为创新主导经济的更广泛趋势的一部分。中国市场对商业无线通讯应用的需求正在迅速成长，中国企业已经在开发下一代通讯网路。
  • 此外，2021年12月，印度坎普尔理工学院的研究人员开发了铝氮化镓（AlGaN）高电子移动性电晶体（HEMT）的高效能产业标准模型。该模型提供了一种简单的设计方法，可用于製造高功率射频电路。射频电路包括用于无线电传输的放大器和开关，可用于航太和国防应用。研究人员的持续创新将推动该地区 RF GaN 市场的成长。

高频氮化镓产业概况

RF GaN市场参与者之间的竞争公司之间的竞争非常激烈，特别是由于雷神技术公司、STM微电子公司等一些主要企业的存在。我们不断创新产品的能力使我们比其他参与者俱有竞争优势。这些公司已经能够透过研发、策略合作伙伴关係和併购在市场上站稳脚步。

2022 年 6 月，连接世界的创新射频解决方案的杰出供应商 Qorvo 荣获美国最尖端科技(DoD) 颁发的国家先进整合互连和製造成长 (SOTA) 奖。我被选为继续获奖者。 RF GaN 计画也称为 STARRY NITE，是国防部副部长研究与工程办公室 (OUSD R&E) 微电子蓝图的一部分。该计划旨在与国防部先进封装生态系统合作，开发并成熟国内开放式SOTA射频GaN晶圆代工厂。

2022 年 5 月，义法半导体与工业、通讯、国防和资料中心产业半导体产品领先供应商 MACOM Technology Solutions Holdings Inc. 宣布推出 RF Gan-on-Si (RF Gan-on-Si) 原型宣布製作成功。凭藉这项成就，ST和MACOM将继续合作并加强双方的关係。

其他福利

  • Excel 格式的市场预测 (ME) 表
  • 3 个月分析师支持

目录

第一章简介

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章市场洞察

  • 市场概况
  • 产业价值链分析
  • 产业吸引力－波特五力分析
    • 新进入者的威胁
    • 买方议价能力
    • 供应商的议价能力
    • 替代产品的威胁
    • 竞争公司之间的敌意强度
  • 技术简介
  • 评估 COVID-19感染疾病对产业的影响

第五章市场动态

  • 市场驱动因素
    • 5G落地进展带动通讯基础设施领域强劲需求
    • 高性能和小尺寸等有利特性
  • 市场限制因素
    • 成本和营运挑战

第六章市场区隔

  • 按用途
    • 军队
    • 通讯基础设施（回程传输、RRH、大规模 MIMO、小型基地台）
    • 卫星通讯
    • 有线宽频
    • 商业雷达和航空电子设备
    • 射频能量
  • 依材料类型
    • GaN-on-Si
    • GaN-on-SiC
    • 其他材料类型（GaN-on-GaN、GaN-on-Diamond）
  • 按地区
    • 北美洲
    • 欧洲
    • 亚太地区
    • 中东和非洲

第七章 竞争形势

  • 公司简介
    • Aethercomm Inc.
    • Analog Devices Inc.
    • Wolfspeed Inc.（Cree Inc.）
    • Integra Technologies Inc.
    • MACOM Technology Solutions Holdings Inc.
    • Microsemi Corporation（Microchip Technology Incorporated）
    • Mitsubishi Electric Corporation
    • NXP Semiconductors NV
    • Qorvo Inc.
    • STMicroelectronics NV
    • Sumitomo Electric Device Innovations Inc.
    • HRL Laboratories
    • Raytheon Technologies
    • Mercury Systems, Inc

第八章投资分析

第九章市场机会与未来趋势

简介目录
Product Code: 63835

The RF GaN Market size is estimated at USD 1.7 billion in 2024, and is expected to reach USD 4.03 billion by 2029, growing at a CAGR of 18.76% during the forecast period (2024-2029).

RF GaN - Market

Due to the benefits of RF GaN usage across a wide range of real-time linked devices and applications, more industries are expected to use the Internet of Things (IoT) technology, which is expected to drive market growth. With the continuously evolving GaN technology, GaN enables higher frequencies in more complex applications, such as phased arrays, radar, and base transceiver stations for cable TV (CATV), very small aperture terminal (VSAT), and defense communications.

Key Highlights

  • RF GaN plays a key role in wireless infrastructure, improving efficiency and expanding bandwidth to support ever-increasing data transmission speeds. The market for RF GaN is primarily driven by increasing 5G adoption and advances in wireless communications. Telecom operators could also benefit from increased use of GaN power transistors.
  • The increasing adoption of RF GaN in electric automotive is also one of the major factors driving demand in this market. Silicon carbide devices are used in the onboard battery chargers of electric buses, taxis, lorries, and passenger cars. Further, increasing government laws favoring the electric vehicles market stimulates demand in the RF GaN market.
  • The infrastructure needed to create autonomous vehicles and drones is another factor that increases demand for RF GaN technologies. Hence, growth in the adoption and development of autonomous vehicles and drones for various applications, especially military and defense, is expected to increase further the adoption of RF GaN devices over the forecast period.
  • The inherent material advantages of GaN come with some associated manufacturing challenges that include the cost and optimization of device processing and packaging. Other issues include charge trapping and current collapse, which need to be resolved for increased adoption of these devices. Although significant improvements have been made in RF GaN-based devices (performance and yields), there are still some barriers preventing the gallium nitride on silicon carbide (GaN-on-SiC) from entering mainstream applications (i.e., in wireless telecom base-stations or CATV).
  • The COVID-19 pandemic impacted supply lines and the telecoms industry. It considerably hindered the penetration of 5G in the telecommunications sector. In this critical situation, consumers are expected to continue using mobile phones, but most of them may not be able to invest more in a technology that is still in a nascent stage.
  • Rapidly increasing data consumption has resulted in the growth of commercial networks and is encouraging network providers to adopt next-generation networks, such as 4G and 5G. According to the Cisco Visual Networking Index, global mobile data traffic is expected to register a CAGR of 46%, reaching 77.5 exabytes per month by 2022.
  • Organizations across the world are innovating new products and expanding their business. For instance, in June 2022, Integra, a provider of innovative RF and microwave power solutions, announced that it had begun shipping its breakthrough 100V RF GaN technology to customers in the United States and Europe. The company also announced the expansion of its 100V RF GaN product portfolio with the launch of seven new products for the avionics, directed energy, electronic warfare, radar, and scientific market segments, delivering power levels of up to 5kW in a single transistor.

Radiofrequency Gallium Nitride Market Trends

Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation

  • As a primary driver of global digitization and an industry undergoing comprehensive changes in the market environment, the telecommunications industry is regarded as a major user of digital transformation technologies. The telecommunications industry's investment in interoperability and technology has facilitated a paradigm shift in the flow of capital and information throughout the global economy, providing the building blocks for the emergence of entirely new business models across the industry.
  • The 5G technology is expected to revolutionize the domain of various broadband services and empower connectivity across different end-user verticals. The major factors boosting the market share of GaN are increasing mobile subscriptions, streaming of online video content, 5G infrastructure, and various IoT applications using 5G. 5G is anticipated to support different services and associated service requirements across multiple scenarios.
  • Currently, the number of 5G mobile subscriptions is valued at 0.42 million, and it is expected to reach 400 million subscriptions by 2022. With the substantial growth in the rollouts of 5G technology globally, the demand for RF GaN technology is expected to increase.
  • In May 2022, STMicroelectronics (ST) and MACOM Technology Solutions Holdings (MACOM), a supplier of semiconductor products for the telecommunications, industrial, defense, and data center industries, announced the production of RF GaN on silicon (RF Gan-on-Si) prototypes. With this success, ST and MACOM will continue to work together and expand their relationship. GaN-on-Si technology under development by ST and MACOM is anticipated to offer competitive performance and significant economies of scale enabled by integration into standard semiconductor process flows.
  • Qorvo is one of the suppliers of RF solutions to the 2G, 3G, and 4G base station manufacturers. It is uniquely positioned in the market to support the development of sub-6 GHz and cmWave/mmWave wireless infrastructure. Qorvo has been investing in product solutions covering relevant 5G bands, such as 3.5, 4.8 and 28, and 39GHz, to service the market, mainly to enable 5G.
  • The need for dense, small-scale antenna arrays in 5G infrastructure results in key challenges with power and thermal management in radio frequency (RF) systems. With their improved wideband performance, efficiency, and power density, GaN devices offer the potential for more compact solutions that can address these challenges.

Asia-Pacific is Expected to Experience Significant Growth

  • The Asia-Pacific region's discrete semiconductor industry is driven by China, Japan, Taiwan, and South Korea, constituting around 65% of the global discrete semiconductor market. In contrast, others, like Vietnam, Thailand, Malaysia, and Singapore, contribute to the region's dominance in the market.
  • According to the Electronics and Semiconductors Association of India,the Indian market for semiconductor components would register a 10.1% CAGR (2018-2025) to reach USD 32.35 billion by 2025. The country is a vital destination for global research and development centers. Therefore, the ongoing 'Make in India' initiative by the Government of India is expected to result in significant investment in the semiconductor market. Such initiatives by the government of India will leverage the RF GaN market.
  • In February 2022, Navitas Semiconductor, a provider of GaN integrated circuits (ICs), announced its participation in the China International Capital Corporation Limited (CICC) Investor Conference. The company's proprietary GaN power IC integrates GaN power and GaN drive, control, and protection in a single SMT package. Such participation will leverage the GaN market in the region.
  • Demand for RF GaN across the APAC region is expected to increase due to growing investor interest in developing infrastructure to support 5G technology. For instance, according to the GSMA, the Asia-Pacific mobile operator is expected to spend more than USD 400 billion by 2025, of which USD 331 billion will be expended on 5G deployments.
  • The growth of RF GaN companies in China is part of a broader trend as the nation shifts from a manufacturing- to an innovation-driven economy. The Chinese market is witnessing an exploding demand for commercial wireless telecom applications, and Chinese companies are already developing next-gen telecom networks.
  • Moreover, in December 2021, researchers from IIT Kanpur in India developed a high-performance, industry-standard model of aluminum GaN (AlGaN) high electron mobility transistor (HEMT). This model provides a simple design method that can be used to manufacture high-power RF circuits. RF circuits include amplifiers and switches used in wireless transmissions and are useful in aerospace and defense applications. Constant innovations by researchers will drive the market growth of RF GaN in the region.

Radiofrequency Gallium Nitride Industry Overview

The competitive rivalry among the players in the RF GaN market is high owing to the presence of some key players such as Raytheon Technologies, STM microelectronics, amongst others. Their ability to continually innovate their offerings has allowed them to gain a competitive advantage over other players. Through research and development, strategic partnerships, and mergers and acquisitions, these players have been able to gain a strong foothold in the market.

In June 2022, Qorvo, a prominent provider of innovative RF solutions that connect the world, was selected by the US Department of Defense (DoD) to proceed with the Advanced Integration Interconnection and Fabrication Growth for Domestic State-of-the-Art (SOTA) RF GaN program, also known as STARRY NITE, as part of the Office of Undersecretary of Defense Research & Engineering's (OUSD R&E) microelectronics roadmap. The program seeks to develop and mature domestic, open SOTA RF GaN foundries in alignment with the DoD's advanced packaging ecosystem.

In May 2022, STMicroelectronics and MACOM Technology Solutions Holdings Inc., a significant supplier of semiconductor products for the industrial, telecommunications, defense, and data center industries, announced the successful production of RF Gan on Silicon (RF Gan-on-Si) prototypes. With this achievement, ST and MACOM would continue to work together and enhance their relationship.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Value Chain Analysis
  • 4.3 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.3.1 Threat of New Entrants
    • 4.3.2 Bargaining Power of Buyers
    • 4.3.3 Bargaining Power of Suppliers
    • 4.3.4 Threat of Substitute Products
    • 4.3.5 Intensity of Competitive Rivalry
  • 4.4 Technology Snapshot
  • 4.5 Assessment of the Impact of COVID-19 on the Industry

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Strong Demand from Telecom Infrastructure Segment Driven by Advancements in 5G Implementation
    • 5.1.2 Favorable Attributes Such As High-performance and Small Form Factor to
  • 5.2 Market Restraints
    • 5.2.1 Cost & Operational Challenges

6 MARKET SEGMENTATION

  • 6.1 By Application
    • 6.1.1 Military
    • 6.1.2 Telecom Infrastructure (Backhaul, RRH, Massive MIMO, Small Cells)
    • 6.1.3 Satellite Communication
    • 6.1.4 Wired Broadband
    • 6.1.5 Commercial Radar and Avionics
    • 6.1.6 RF Energy
  • 6.2 By Material Type
    • 6.2.1 GaN-on-Si
    • 6.2.2 GaN-on-SiC
    • 6.2.3 Other Material Types (GaN-on-GaN, GaN-on-Diamond)
  • 6.3 Geography
    • 6.3.1 North America
    • 6.3.2 Europe
    • 6.3.3 Asia Pacific
    • 6.3.4 Middle East and Africa

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 Aethercomm Inc.
    • 7.1.2 Analog Devices Inc.
    • 7.1.3 Wolfspeed Inc. (Cree Inc.)
    • 7.1.4 Integra Technologies Inc.
    • 7.1.5 MACOM Technology Solutions Holdings Inc.
    • 7.1.6 Microsemi Corporation (Microchip Technology Incorporated)
    • 7.1.7 Mitsubishi Electric Corporation
    • 7.1.8 NXP Semiconductors NV
    • 7.1.9 Qorvo Inc.
    • 7.1.10 STMicroelectronics NV
    • 7.1.11 Sumitomo Electric Device Innovations Inc.
    • 7.1.12 HRL Laboratories
    • 7.1.13 Raytheon Technologies
    • 7.1.14 Mercury Systems, Inc

8 INVESTMENT ANALYSIS

9 MARKET OPPORTUNITIES AND FUTURE TRENDS