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市场调查报告书
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1755921

2032 年 RF GaN 市场预测：按材料类型、装置类型、晶圆尺寸、应用、最终用户和地区进行的全球分析

RF GaN Market Forecasts to 2032 - Global Analysis By Material Type (GaN-on-SiC, GaN-on-Silicon, GaN-on-Diamond and Other Materials), Device Type, Wafer Size, Application, End User and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3个工作天内

价格

根据 Stratistics MRC 的数据，全球 RF GaN 市场预计在 2025 年达到 17 亿美元，到 2032 年将达到 72 亿美元，预测期内的复合年增长率为 22.2%。

「射频 GaN」指的是氮化镓半导体在射频环境中的应用。射频 GaN 以其高电压、高功率密度和高效率而闻名，可实现卫星通讯、雷达系统和无线基础设施中紧凑、高效的组件。 GaN 的温度和频率性能优于硅和砷化镓等传统材料，使其成为高频、高功率射频装置的理想选择。

根据普华永道报告，预计2030年5G技术将为全球GDP贡献1.3兆美元。

雷达和电子战系统的需求不断增加

雷达和电子战系统日益增长的需求是射频 GaN 市场的关键驱动力。这些应用需要高频、高功率和高效率的组件，而 GaN 正是这些组件的优势所在。全球国防系统的现代化，尤其是先进雷达和电子战能力的整合，正在加速射频 GaN 装置的普及。基于 GaN 的解决方案卓越的功率密度和热性能对于下一代军事和航太平台至关重要，从而推动了市场的强劲成长。

温度控管挑战

GaN元件在高功率密度和高频率下工作，会产生大量热量，如果无法有效散热，可能会损害装置的可靠性和寿命。此外，将GaN整合到紧凑的高性能係统中会加剧这些挑战，需要先进的冷却解决方案和创新的封装技术。这些额外的复杂性增加了开发成本和上市时间，可能会限制其广泛应用，尤其是在成本敏感的应用中。

与基于人工智慧的防御系统集成

将先进的人工智慧演算法与高频、高功率的氮化镓元件结合，将实现现代国防平台的即时资料处理、自适应讯号管理和增强型威胁侦测。此外，人工智慧与氮化镓的协同效应将增强雷达、电子战和通讯系统的效能，为更智慧、更自主的军事行动铺路。预计这种融合将刺激该领域的大量投资和创新。

GaN晶圆与基板供应链中断

GaN晶圆和基板供应链中断对射频GaN市场构成重大威胁。依赖有限数量的高品质GaN材料供应商，使製造商面临地缘政治紧张局势、自然灾害和物流瓶颈等风险。此外，碳化硅(SiC)和高纯度GaN等关键基板的供应中断可能导致生产延迟、成本上升和需求无法满足。

COVID-19的影响：

新冠疫情最初扰乱了射频氮化镓市场，因为供应链中断和终端产业需求下降。然而，这场危机加速了数位化、远端办公和通讯基础设施的扩张，从而推动了对高效能射频组件的需求。随着产业适应和监管放鬆，通讯、国防和消费电子等领域恢復了成长势头，带动了射频氮化镓市场快速復苏和成长。

预计在预测期内，GaN-on-SiC 部分将成为最大的部分。

预计在预测期内，GaN-on-SiC领域将占据最大的市场占有率，因为GaN-on-SiC装置卓越的导热性、效率和功率处理能力对于高效能射频应用至关重要。此外，它们能够在高功率密度和高频率下可靠运行，使其成为通讯、国防和航太等高要求领域的首选。製造流程和成本效率的持续进步进一步巩固了该领域的市场领先地位。

预计通讯业在预测期内将实现最高复合年增长率

预计通讯业将在预测期内实现最高成长率。 5G 网路的快速部署和高速资料通讯的激增，正在推动射频 GaN 装置在该领域的应用。此外，GaN 技术固有的优势（例如高功率密度、高效率和高频宽）能够增强基地台和基础设施的讯号完整性和网路效能。随着全球对先进无线连接的需求不断增长，预计通讯行业的市场扩张速度将继续超过其他应用领域。

占比最大的地区：

预计北美将在预测期内占据最大市场占有率，这得益于该地区先进的国防基础设施、5G技术的早期采用以及在研发方面的大量投资。此外，主要半导体製造商的存在以及政府对先进通讯和国防能力的大力支持进一步巩固了北美的主导地位。

复合年增长率最高的地区：

预计亚太地区在预测期内将实现最高的复合年增长率。该地区快速的工业化、快速发展的通讯基础设施以及强大的製造能力，正在推动对射频 GaN 装置的巨大需求。此外，中国、日本和韩国等国家在先进半导体技术的采用和生产方面处于领先地位。政府支持国内製造业和技术创新的倡议将进一步推动市场成长。

免费客製化服务：

订阅此报告的客户可享有以下免费自订选项之一：

  • 公司简介
    • 全面分析其他市场参与者（最多 3 家公司）
    • 主要企业的SWOT分析（最多3家公司）
  • 地理细分
    • 根据客户兴趣对主要国家市场进行估计、预测和复合年增长率（註：基于可行性检查）
  • 竞争基准化分析
    • 根据产品系列、地理分布和策略联盟对主要企业基准化分析

目录

第一章执行摘要

第二章 前言

  • 概述
  • 相关利益者
  • 研究范围
  • 调查方法
    • 资料探勘
    • 数据分析
    • 数据检验
    • 研究途径
  • 研究材料

第三章市场走势分析

  • 驱动程式
  • 限制因素
  • 机会
  • 威胁
  • 应用分析
  • 最终用户分析
  • 新兴市场
  • COVID-19的影响

第四章 波特五力分析

  • 供应商的议价能力
  • 买家的议价能力
  • 替代品的威胁
  • 新进入者的威胁
  • 竞争对手之间的竞争

5. 全球RF GaN市场（依材料类型）

  • GaN-on-SiC
  • 硅基氮化镓
  • 钻石基氮化镓
  • 其他材料类型

6. 全球 RF GaN 市场（以设备类型）

  • 分立元件
  • 集成设备（MMIC）

7. 全球RF GaN市场（依晶圆尺寸）

  • 小于150毫米
  • 150毫米或以上

8. 全球RF GaN市场（按应用）

  • 无线基础设施
  • 雷达系统
  • 卫星通讯
  • 测试与测量设备
  • 电子战
  • 射频能量
  • 其他用途

第九章 全球 RF GaN 市场（按最终用户）

  • 航太和国防
  • 通讯
  • 车
  • 卫生保健
  • 产业
  • 其他最终用户

第十章 全球 RF GaN 市场（按地区）

  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 欧洲
    • 德国
    • 英国
    • 义大利
    • 法国
    • 西班牙
    • 其他欧洲国家
  • 亚太地区
    • 日本
    • 中国
    • 印度
    • 澳洲
    • 纽西兰
    • 韩国
    • 其他亚太地区
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地区
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 卡达
    • 南非
    • 其他中东和非洲地区

第十一章 重大进展

  • 协议、伙伴关係、合作和合资企业
  • 收购与合併
  • 新产品发布
  • 业务扩展
  • 其他关键策略

第十二章 公司概况

  • Cree, Inc.（Wolfspeed）
  • Qorvo, Inc.
  • Skyworks Solutions, Inc.
  • Infineon Technologies AG
  • MACOM Technology Solutions Holdings, Inc.
  • NXP Semiconductors NV
  • STMicroelectronics NV
  • Mitsubishi Electric Corporation
  • Analog Devices, Inc.
  • Panasonic Corporation
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Sumitomo Electric Industries, Ltd.
  • GaN Systems Inc.
  • Analogic Corporation
  • United Monolithic Semiconductors（UMS）
  • Transphorm, Inc.
Product Code: SMRC29815

According to Stratistics MRC, the Global RF GaN Market is accounted for $1.7 billion in 2025 and is expected to reach $7.2 billion by 2032 growing at a CAGR of 22.2% during the forecast period. "RF GaN" describes the utilization of gallium nitride semiconductors in radio frequency settings. Compact, high-performance components in satellite communications, radar systems, and wireless infrastructure are made possible by RF GaN, which is well-known for its high breakdown voltage, power density, and efficiency. GaN provides better temperature and frequency performance than conventional materials like silicon or GaAs, which makes it perfect for high-frequency, high-power radio frequency devices.

According to a PwC report, 5G technology is expected to contribute $1.3 trillion to global GDP by 2030.

Market Dynamics:

Driver:

Rising demand in radar and electronic warfare systems

The escalating demand for radar and electronic warfare systems is a pivotal driver for the RF GaN market. These applications require high-frequency, high-power, and high-efficiency components attributes where GaN excels. The modernization of defense systems globally, especially with the integration of advanced radar and electronic warfare capabilities, has accelerated the adoption of RF GaN devices. The superior power density and thermal performance of GaN-based solutions make them indispensable for next-generation military and aerospace platforms, fueling robust market growth.

Restraint:

Thermal management challenges

GaN devices operate at higher power densities and frequencies, they generate substantial heat, which can compromise reliability and device lifespan if not effectively dissipated. Moreover, the integration of GaN in compact, high-performance systems intensifies these challenges, necessitating advanced cooling solutions and innovative packaging techniques. These added complexities increase both development costs and time to market, potentially limiting broader adoption, especially in cost-sensitive applications.

Opportunity:

Integration with AI-based defense systems

Advanced AI algorithms, when combined with high-frequency, high-power GaN devices, enable real-time data processing, adaptive signal management, and enhanced threat detection in modern defense platforms. Additionally, the synergy between AI and GaN amplifies the effectiveness of radar, electronic warfare, and communication systems, paving the way for smarter, more autonomous military operations. This convergence is expected to drive significant investments and innovation in the sector.

Threat:

Supply chain disruptions for GaN wafers and substrates

Supply chain disruptions for GaN wafers and substrates pose a considerable threat to the RF GaN market. The reliance on a limited number of suppliers for high-quality GaN materials exposes manufacturers to risks such as geopolitical tensions, natural disasters, and logistical bottlenecks. Furthermore, any interruption in the supply of critical substrates like silicon carbide (SiC) or high-purity GaN can lead to production delays, increased costs, and unmet demand.

Covid-19 Impact:

The COVID-19 pandemic initially disrupted the RF GaN market due to supply chain interruptions and reduced demand from end-use industries. However, the crisis accelerated digitalization, remote work, and the expansion of telecommunications infrastructure, which in turn boosted demand for high-performance RF components. As industries adapted and restrictions eased, sectors such as telecommunications, defense, and consumer electronics regained momentum, leading to a swift recovery and renewed growth in the RF GaN market.

The GaN-on-SiC segment is expected to be the largest during the forecast period

The GaN-on-SiC segment is expected to account for the largest market share during the forecast period due to the superior thermal conductivity, efficiency, and power handling capabilities of GaN-on-SiC devices, which are crucial for high-performance RF applications. Moreover, their ability to operate reliably at elevated power densities and frequencies makes them the preferred choice for demanding sectors such as telecommunications, defense, and aerospace. Continuous advancements in fabrication processes and cost-effectiveness further reinforce the segment's leadership in the market.

The telecommunications segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the telecommunications segment is predicted to witness the highest growth rate. The rapid rollout of 5G networks and the surge in high-speed data communication are driving the adoption of RF GaN devices in this sector. Furthermore, GaN technology's inherent advantages, such as high power density, efficiency, and wide bandwidth, enable enhanced signal integrity and network performance in base stations and infrastructure. As global demand for advanced wireless connectivity rises, the telecommunications segment will continue to outpace other applications in market expansion.

Region with largest share:

During the forecast period, the North America region is expected to hold the largest market share, fueled by the region's advanced defense infrastructure, early adoption of 5G technologies, and significant investments in research and development. Additionally, the presence of major semiconductor manufacturers and robust government support for advanced communications and defense capabilities further consolidate North America's dominant position.

Region with highest CAGR:

Over the forecast period, the Asia Pacific region is anticipated to exhibit the highest CAGR. The region's rapid industrialization, burgeoning telecommunications infrastructure, and strong manufacturing capabilities drive exceptional demand for RF GaN devices. Moreover, countries such as China, Japan, and South Korea are leading in both the adoption and production of advanced semiconductor technologies. Government initiatives supporting domestic manufacturing and technological innovation further accelerate market growth.

Key players in the market

Some of the key players in RF GaN Market include Cree, Inc. (Wolfspeed), Qorvo, Inc., Skyworks Solutions, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., NXP Semiconductors N.V., STMicroelectronics N.V., Mitsubishi Electric Corporation, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated, Toshiba Corporation, Sumitomo Electric Industries, Ltd., GaN Systems Inc., Analogic Corporation, United Monolithic Semiconductors (UMS), and Transphorm, Inc.

Key Developments:

In March 2025 - At SATELLITE 2025, MACOM showcased new high power C Band, Q Band, and Ka Band GaN MMIC PAs using PURE CARBIDE(TM) GaN technology, supporting 125 W and above with improved efficiency.

In January 2025, Infineon Technologies AG a leader in power, automotive and IoT semiconductors announced the formation of a new business unit to drive the company's growth in the area of sensors by combining the existing Sensor and Radio Frequency (RF) businesses into one dedicated organization. The new business unit SURF (Sensor Units & Radio Frequency) will be part of the Power & Sensor Systems (PSS) division and include the former Automotive and Multi-market Sense & Control businesses.

Material Types Covered:

  • GaN-on-SiC
  • GaN-on-Silicon
  • GaN-on-Diamond
  • Other Material Types

Device Types Covered:

  • Discrete Devices
  • Integrated Devices (MMICs)

Wafer Sizes Covered:

  • <150 mm
  • 150 mm and Larger

Applications Covered:

  • Wireless Infrastructure
  • Radar Systems
  • Satellite Communication
  • Test & Measurement Equipment
  • Electronic Warfare
  • RF energy
  • Other Applications

End Users Covered:

  • Aerospace & Defense
  • Telecommunications
  • Automotive
  • Healthcare
  • Industrial
  • Other End Users

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Application Analysis
  • 3.7 End User Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global RF GaN Market, By Material Type

  • 5.1 Introduction
  • 5.2 GaN-on-SiC
  • 5.3 GaN-on-Silicon
  • 5.4 GaN-on-Diamond
  • 5.5 Other Material Types

6 Global RF GaN Market, By Device Type

  • 6.1 Introduction
  • 6.2 Discrete Devices
  • 6.3 Integrated Devices (MMICs)

7 Global RF GaN Market, By Wafer Size

  • 7.1 Introduction
  • 7.2 <150 mm
  • 7.3 150 mm and Larger

8 Global RF GaN Market, By Application

  • 8.1 Introduction
  • 8.2 Wireless Infrastructure
  • 8.3 Radar Systems
  • 8.4 Satellite Communication
  • 8.5 Test & Measurement Equipment
  • 8.6 Electronic Warfare
  • 8.7 RF energy
  • 8.8 Other Applications

9 Global RF GaN Market, By End User

  • 9.1 Introduction
  • 9.2 Aerospace & Defense
  • 9.3 Telecommunications
  • 9.4 Automotive
  • 9.5 Healthcare
  • 9.6 Industrial
  • 9.7 Other End Users

10 Global RF GaN Market, By Geography

  • 10.1 Introduction
  • 10.2 North America
    • 10.2.1 US
    • 10.2.2 Canada
    • 10.2.3 Mexico
  • 10.3 Europe
    • 10.3.1 Germany
    • 10.3.2 UK
    • 10.3.3 Italy
    • 10.3.4 France
    • 10.3.5 Spain
    • 10.3.6 Rest of Europe
  • 10.4 Asia Pacific
    • 10.4.1 Japan
    • 10.4.2 China
    • 10.4.3 India
    • 10.4.4 Australia
    • 10.4.5 New Zealand
    • 10.4.6 South Korea
    • 10.4.7 Rest of Asia Pacific
  • 10.5 South America
    • 10.5.1 Argentina
    • 10.5.2 Brazil
    • 10.5.3 Chile
    • 10.5.4 Rest of South America
  • 10.6 Middle East & Africa
    • 10.6.1 Saudi Arabia
    • 10.6.2 UAE
    • 10.6.3 Qatar
    • 10.6.4 South Africa
    • 10.6.5 Rest of Middle East & Africa

11 Key Developments

  • 11.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 11.2 Acquisitions & Mergers
  • 11.3 New Product Launch
  • 11.4 Expansions
  • 11.5 Other Key Strategies

12 Company Profiling

  • 12.1 Cree, Inc. (Wolfspeed)
  • 12.2 Qorvo, Inc.
  • 12.3 Skyworks Solutions, Inc.
  • 12.4 Infineon Technologies AG
  • 12.5 MACOM Technology Solutions Holdings, Inc.
  • 12.6 NXP Semiconductors N.V.
  • 12.7 STMicroelectronics N.V.
  • 12.8 Mitsubishi Electric Corporation
  • 12.9 Analog Devices, Inc.
  • 12.10 Panasonic Corporation
  • 12.11 Texas Instruments Incorporated
  • 12.12 Toshiba Corporation
  • 12.13 Sumitomo Electric Industries, Ltd.
  • 12.14 GaN Systems Inc.
  • 12.15 Analogic Corporation
  • 12.16 United Monolithic Semiconductors (UMS)
  • 12.17 Transphorm, Inc.

List of Tables

  • Table 1 Global RF GaN Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global RF GaN Market Outlook, By Material Type (2024-2032) ($MN)
  • Table 3 Global RF GaN Market Outlook, By GaN-on-SiC (2024-2032) ($MN)
  • Table 4 Global RF GaN Market Outlook, By GaN-on-Silicon (2024-2032) ($MN)
  • Table 5 Global RF GaN Market Outlook, By GaN-on-Diamond (2024-2032) ($MN)
  • Table 6 Global RF GaN Market Outlook, By Other Material Types (2024-2032) ($MN)
  • Table 7 Global RF GaN Market Outlook, By Device Type (2024-2032) ($MN)
  • Table 8 Global RF GaN Market Outlook, By Discrete Devices (2024-2032) ($MN)
  • Table 9 Global RF GaN Market Outlook, By Integrated Devices (MMICs) (2024-2032) ($MN)
  • Table 10 Global RF GaN Market Outlook, By Wafer Size (2024-2032) ($MN)
  • Table 11 Global RF GaN Market Outlook, By <150 mm (2024-2032) ($MN)
  • Table 12 Global RF GaN Market Outlook, By 150 mm and Larger (2024-2032) ($MN)
  • Table 13 Global RF GaN Market Outlook, By Application (2024-2032) ($MN)
  • Table 14 Global RF GaN Market Outlook, By Wireless Infrastructure (2024-2032) ($MN)
  • Table 15 Global RF GaN Market Outlook, By Radar Systems (2024-2032) ($MN)
  • Table 16 Global RF GaN Market Outlook, By Satellite Communication (2024-2032) ($MN)
  • Table 17 Global RF GaN Market Outlook, By Test & Measurement Equipment (2024-2032) ($MN)
  • Table 18 Global RF GaN Market Outlook, By Electronic Warfare (2024-2032) ($MN)
  • Table 19 Global RF GaN Market Outlook, By RF energy (2024-2032) ($MN)
  • Table 20 Global RF GaN Market Outlook, By Other Applications (2024-2032) ($MN)
  • Table 21 Global RF GaN Market Outlook, By End User (2024-2032) ($MN)
  • Table 22 Global RF GaN Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 23 Global RF GaN Market Outlook, By Telecommunications (2024-2032) ($MN)
  • Table 24 Global RF GaN Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 25 Global RF GaN Market Outlook, By Healthcare (2024-2032) ($MN)
  • Table 26 Global RF GaN Market Outlook, By Industrial (2024-2032) ($MN)
  • Table 27 Global RF GaN Market Outlook, By Other End Users (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.