查看购物车
  • Traditional Chinese
  • English
  • Japanese
  • Korean
封面
市场调查报告书
商品编码
1550334

日本离散半导体：市场占有率分析、产业趋势与统计、成长预测（2024-2029）

Japan Discrete Semiconductors - Market Share Analysis, Industry Trends & Statistics, Growth Forecasts (2024 - 2029)
出版日期: | 出版商: Mordor Intelligence | 英文 120 Pages | 商品交期: 2-3个工作天内

价格

※ 本网页内容可能与最新版本有所差异。详细情况请与我们联繫。

简介目录

日本离散半导体市场规模预计到 2024 年为 42.6 亿美元，预计到 2029 年将达到 55.9 亿美元，预测期内（2024-2029 年）复合年增长率为 5.59%。

日本分立半导体市场

离散半导体对于技术进步至关重要，尤其是在汽车电子、可再生能源系统和消费性电子领域。物联网、电动车和智慧设备等新兴趋势正在推动对专用离散半导体的需求。此外，由于这些半导体製造商在世界各地运营，他们经常以多种货币采购和销售材料。因此，外汇波动会对盈利和竞争力产生重大影响。

主要亮点

  • 离散半导体或分离式元件或装置是单独的电子元件，设计用于在电子电路中执行特定功能并独立运行，无需整合。离散半导体的常见范例包括二极体、电晶体和闸流体。这些组件通常封装有两个或多个用于电路连接的引线（引脚）。离散半导体在电子领域有广泛的应用，从电源和放大器到控制电路和讯号处理。
  • 离散半导体比积体电路具有显着优势，包括增强的灵活性、客製化和卓越的功率处理能力。设计人员可以精确控制电路设计和性能，以支援更高的电压和电流等级。然而，与积体电路相比，分立元件需要更多的基板空间并且可能需要更多的组装步骤。
  • 此外，大宗商品价格的波动，特别是金属、硅、稀土元素等原料价格的波动，直接影响离散半导体的製造成本。这些波动可能会对利润率产生重大影响，并需要调整定价策略。
  • 高效率电源管理是离散半导体的关键驱动因素之一。先进的系统结构提高了 AC-DC 电源供应器的效率，同时减少了其尺寸和组件数量。此外，乙太网路供电 (PoE) 标准的更新现在支援更高的功率传输，从而促进连网型照明等创新设备的开发。
  • 穿戴式设备，从基本物理特性到最终用户体验，对于推动消费者采用至关重要。透过在产品设计过程中密切监控市场趋势和挑战，离散半导体公司可以大大受益并保持竞争力。具有改进的迁移率和临界击穿电场的半导体，特别是碳化硅（SiC），越来越多地被采用。这种趋势在电晶体领域尤其明显，并扩展到肖特基势垒二极体（SBD）、结型场效电晶体（JFET）和MOSFET电晶体等电力电子元件。
  • 俄罗斯入侵乌克兰、美国竞争、选举和以色列战争等地缘政治挑战正在扰乱全球供应链，特别是对传统工业、国防、高科技领域、航太和绿色能源至关重要的关键原材料影响很大。俄罗斯-乌克兰战争和经济放缓对半导体产业造成了重大干扰。通膨和利率上升减少了消费者支出，抑制了行业需求，并导致离散半导体市场成长放缓。

日本离散半导体市场趋势

功率电晶体有望占据较大市场占有率

  • MOSFET 是主要用于在各种应用中切换和放大电子讯号的半导体装置。它属于场效电晶体(FET) 系列，因其能够利用电场控制两个端子之间的电流而闻名。它在低电压下工作时提供快速开关和最高效率。
  • 传统功率放大器中的功率损耗催生​​了对具有整合输入或输出电阻电路以及检验的输出功率性能的射频高功率 MOSFET 模组的需求。三菱电机等主要厂商计划在明年内推出配备此新型MOSFET的900MHz模组，以扩展频宽。该公司表示，该型号在763MHz至870MHz频段的功率输出为50W，整体效率为40%，可望有助于降低功耗并扩大无线通讯范围。
  • 在电子产业，对智慧型手机、平板电脑、笔记型电脑、智慧型穿戴装置和物联网设备等各种电子设备的需求正在快速成长。这些设备需要功率晶体管来实现各种功能。不断增长的消费者基础和不断推出的新电子设备正在推动对功率电晶体的需求。
  • 在国内大型製造基地以及SONY和Panasonic等老牌家用电子电器公司的支持下，家用电子电器领域预计将对市场成长做出重大贡献。预计这将推动家用电子电器产业电子元件製造中对离散半导体的需求增加，从而推动日本市场的成长。
  • 此外，根据经济产业省报告，2023年日本电子产业的电子零件和设备总产值将达到约6.97兆日圆（4,970亿美元）。在此期间，日本电子工业总产值达到约10.7兆日圆（760亿美元）。

汽车产业预计将出现显着的市场成长

  • 离散半导体对于汽车电子产品的变革至关重要，因为它们是为单独的电子功能量身定制且密不可分的。与组合功能的积体电路 (IC) 不同，二极体、电晶体和闸流闸流体等离散半导体可以自主运行，从而增强车辆的功能、安全性和连接性。这一转变预示着技术进步的新时代，并提高了汽车性能和功能的基准。
  • 汽车需求主要推动分立元件市场，尤其是功率电晶体和整流器。传统汽车几十年来一直依赖 12V 电池系统，但现在它们很难满足现代汽车日益增长的电子需求，因此对更节能解决方案的需求日益凸显。
  • 日本政府设定了所有到 2050 年在日本销售的新车均为电动或混合动力汽车的目标。日本政府打算向私人企业提供补贴，以鼓励电动车电池和马达的进步。为了减少二氧化碳排放，日本政府正在积极推广电动车（EV）的使用，并大力投资电动车基础建设。由于政府对电动车购买者提供补贴，日本的电动车充电站数量迅速增加，以适应不断增长的电动车数量。
  • 此外，根据日本汽车经销商协会联合会和日本轻型汽车摩托车协会公布的资料，2023年标准型电动车（​​EV）保有量将达到43,991辆，其中日本着名的轻型轻型汽车电动车保有量将达到44,544辆。

日本离散半导体产业概况

日本离散半导体市场已整合，主要企业包括义法半导体、英飞凌科技、恩智浦半导体和 Diodes 公司。市场参与企业正在策略性地利用伙伴关係和收购来加强产品系列併建立永续的竞争优势。

  • 2024 年 6 月：三菱电机公司宣布计划推出基于网路的服务。该服务为新逆变器的设计和检验提供关键资料。该逆变器具有一个带有三个 LV100绝缘栅双极电晶体(IGBT) 的模组。其主要目标是协助客户加速开发适用于光电系统等应用的专用高功率逆变器。此逆变器原型是一个配备了三个并联 LV100 工业 IGBT 的模组，安装在 100mm x 140mm 的紧凑框架中，这是高功率逆变器系统的标准尺寸。
  • 2024 年 3 月：英飞凌科技宣布推出最新产品 IAUCN08S7N013，这标誌着其全新 OptiMOS 7 80V 功率 MOSFET 技术的首次亮相。此新产品的功率密度显着提高，采用弹性高电流 SSO8 5 x 6 mm2 SMD 封装。 OptiMOS 7 80V 专为快速成长的 48V 板网应用而设计，是汽车领域的理想选择。旨在满足电动车、48 V马达控制中汽车 DC-DC 转换器的严格标准，包括电动方向盘(EPS)、48 V 电池开关、电动二轮车和三轮车等应用。

其他好处：

  • Excel 格式的市场预测 (ME) 表
  • 3 个月分析师支持

目录

第一章简介

  • 研究假设和市场定义
  • 调查范围

第二章调查方法

第三章执行摘要

第四章市场洞察

  • 市场概况
  • 产业吸引力－波特五力分析
    • 供应商的议价能力
    • 消费者议价能力
    • 新进入者的威胁
    • 替代品的威胁
    • 竞争公司之间敌对关係的强度
  • 产业价值链分析
  • COVID-19副作用和其他宏观经济因素对市场的影响

第五章市场动态

  • 市场驱动因素
    • 汽车和电子领域对高节能省电元件的需求不断增加
    • 绿色能源发电需求增加带动市场
  • 市场挑战
    • 积体电路需求增加

第六章 市场细分

  • 按类型
    • 二极体
    • 小讯号电晶体
    • 功率电晶体
      • MOSFET功率晶体管
      • IGBT功率电晶体
      • 其他功率电晶体
    • 整流器
    • 闸流体
  • 按行业分类
    • 车
    • 家用电子电器
    • 通讯设备
    • 工业的
    • 其他行业

第七章 竞争格局

  • 公司简介
    • On Semiconductor Corporation
    • Infineon Technologies AG
    • STMicroelectronics NV
    • NXP Semiconductors NV
    • Diodes Incorporated
    • Toshiba Electronic Devices & Storage Corporation
    • ABB Ltd.
    • Nexperia BV
    • Semikron Danfoss Holding A/S（Danfoss A/S）
    • Eaton Corporation PLC
    • Hitachi Energy Ltd.（Hitachi Ltd.）
    • Mitsubishi Electric Corp.
    • Fuji Electric Co Ltd
    • Analog Devices, Inc.
    • Vishay Intertechnology Inc.
    • Renesas Electronics Corporation
    • ROHM Co. Ltd
    • Microchip Technology
    • Qorvo Inc.
    • Wolfspeed Inc.
    • Texas Instruments Inc.
    • Littelfuse Inc
    • WeEn Semiconductors

第八章投资分析

第9章市场的未来

简介目录
Product Code: 50002959

The Japan Discrete Semiconductors Market size is estimated at USD 4.26 billion in 2024, and is expected to reach USD 5.59 billion by 2029, growing at a CAGR of 5.59% during the forecast period (2024-2029).

Japan Discrete Semiconductors - Market

Discrete semiconductors are crucial in technological advancements, especially in automotive electronics, renewable energy systems, and consumer electronics. Emerging trends like IoT, electric vehicles, and smart devices fuel the demand for specialized discrete semiconductors. Moreover, given that manufacturers of these semiconductors have a global presence, they often source materials and conduct sales in various currencies. Consequently, fluctuations in exchange rates can significantly affect their profitability and competitive edge.

Key Highlights

  • Discrete semiconductors, or discrete components or devices, are individual electronic components designed to carry out specific functions within electronic circuits that operate independently, without integration. Common examples of discrete semiconductors include diodes, transistors, and thyristors. These components are typically housed in packages featuring two or more leads (pins) for circuit connections. Discrete semiconductors find extensive applications across electronics, from power supplies and amplifiers to control circuits and signal processing.
  • Discrete semiconductors provide significant advantages over integrated circuits, including enhanced flexibility, customization, and superior power handling capabilities. They enable designers to precisely control circuit design and performance precisely, accommodating higher voltage and current levels. However, discrete components may necessitate more board space and additional assembly steps compared to integrated circuits.
  • Furthermore, fluctuations in commodity prices, particularly in raw materials like metals, silicon, and rare earth elements, directly influence the manufacturing costs of discrete semiconductors. These fluctuations can significantly impact profit margins and necessitate adjustments in pricing strategies.
  • Efficient power management is one of the significant driving factors in discrete semiconductors. Advanced system architectures are enhancing the efficiency of AC-DC power adapters while reducing their size and component count. Furthermore, updated power-over-ethernet (PoE) standards now support higher power transfers, facilitating the development of innovative devices such as connected lighting.
  • Wearable devices, from their fundamental physics to the end-user experience, are crucial in driving consumer adoption. Discrete semiconductor companies can benefit significantly by closely monitoring market trends and challenges during product design, ensuring they maintain a competitive edge. The adoption of semiconductors with enhanced mobility and critical breakdown fields, particularly Silicon Carbide (SiC), is gaining traction. This trend is especially notable in the transistor range and extends to power electronics devices, including Schottky barrier diodes (SBDs), junction field effect transistors (JFETs), and MOSFET transistors.
  • Geopolitical challenges, including the Russian invasion of Ukraine, China-US competition, elections, and the war in Israel, significantly impact the global supply chain, especially critical raw materials vital for traditional industries, defense, high-tech sectors, aerospace, and green energy. The Russia-Ukraine war and economic slowdown caused significant disruption in the semiconductor industry. The increased inflation and interest rates reduced consumer spending, hampered the industry's demand, and led to slow growth in the discrete semiconductor market.

Japan Discrete Semiconductors Market Trends

Power Transistors are Expected to Hold a Significant Market Share

  • MOSFETs are semiconductor devices used primarily for switching and amplifying electronic signals in various applications. They belong to the family of field-effect transistors (FETs) and are known for their ability for controlling the flow of current between the two terminals using an electric field. They function at low voltages while providing quick switching and maximum efficiency.
  • The power loss in conventional power amplifiers creates demand for RF high-power MOSFET modules that offer a built-in input or output impedance-matching circuit and verified output power performance. Key vendors, such as Mitsubishi Electric, plan to expand the frequency range by launching a 900 MHz module equipped with the new MOSFET in the coming year. According to the company, the model with 50 W power output in the 763 MHz to 870 MHz band and a total efficiency of 40% is projected to help reduce power consumption and increase radio communication range.
  • The electronics industry is witnessing a surge in the demand for different electronic devices such as smartphones, tablets, laptops, smart wearables, and IoT devices. These devices require power transistors for various functions. The expanding consumer base and the continuous introduction of new electronic devices drive the demand for power transistors.
  • The consumer electronic segment would contribute significantly to the market's growth, supported by the country's large manufacturing landscape and the established consumer electronic companies, including Sony and Panasonic, among others. This would fuel the demand for discrete semiconductor growth in the manufacturing of electronic components used in the consumer electronic segments, which would drive the market growth in Japan.
  • Furthermore, in 2023, the electronics industry in Japan witnessed electronic components and devices contributing to a total production value of approximately JPY 6.97 trillion (USD 0.497 trillion), as reported by METI (Japan). The overall production value of the Japanese electronics industry during that period reached around JPY 10.7 trillion (USD 0.076 trillion).

Automotive Industry is Expected to Have a Significant Market Growth

  • Discrete semiconductors, tailored for distinct electronic functions and inseparable, are pivotal in transforming automotive electronics. Unlike integrated circuits (ICs), which combine functions, discrete semiconductors, like diodes, transistors, and thyristors, operate autonomously, bolstering automotive capabilities, safety, and connectivity. This shift heralds a new age of technological progress, elevating benchmarks for automotive performance and features.
  • Automotive demands are primarily fueling the market for discrete components, particularly power transistors and rectifiers. While traditional vehicles have relied on 12-V battery systems for decades, they are now struggling to support the increased electronic demands of modern cars, highlighting the necessity for more energy-efficient solutions.
  • By 2050, the Japanese government has set a target to have all newly sold cars in Japan be electric or hybrid. The country intends to provide subsidies to the private sector to expedite the advancement of batteries and motors for electric-powered vehicles. In an effort to decrease its carbon emissions, the Government of Japan is actively promoting the use of electric vehicles (EVs), leading to significant investments in EV infrastructure development. As a result of government subsidies for EV buyers, Japan has experienced a surge in the number of EV charging stations to accommodate the growing number of electric vehicles.
  • Moreover, as per the data released by the Japan Automobile Dealers Association and the Japan Light Motor Vehicle and Motorcycle Association, the year 2023 witnessed the sale of 43,991 standard-size electric vehicles (EVs) and 44,544 electric variants of Japan's renowned lightweight keiminicars.

Japan Discrete Semiconductors Industry Overview

The Japan Discrete Semiconductors Market is consolidated and features key players like STMicroelectronics, Infineon Technologies, NXP Semiconductor, and Diodes Incorporated, among others. Market participants strategically leverage partnerships and acquisitions to bolster their product portfolios and establish a sustainable competitive edge.

  • June 2024: Mitsubishi Electric Corporation has announced plans to introduce a web-based service. This service will offer crucial data on the design and validation of the new inverter. The inverter is distinctive, featuring a module housing three LV100 insulated gate bipolar transistors (IGBTs). The primary goal is to assist customers in expediting the development of high-power inverters, specifically for applications like photovoltaic power-generation systems. Notably, the prototype inverter boasts a module that houses three parallel LV100 industrial IGBTs, all within a compact 100mm x 140mm frame, a standard size for high-power inverter systems.
  • March 2024: Infineon Technologies introduced its latest product, the IAUCN08S7N013, marking the debut of its new OptiMOS 7 80 V power MOSFET technology. This new offering boasts a notable uptick in power density and comes housed in the resilient and high-current SSO8 5 x 6 mm2 SMD package. Designed for the burgeoning 48 V board net applications, the OptiMOS 7 80 V is primed for the automotive sector. It's engineered to meet the exacting standards of automotive DC-DC converters in EVs, 48 V motor control - including applications like electric power steering (EPS), 48 V battery switches, and electric two- and three-wheelers.

Additional Benefits:

  • The market estimate (ME) sheet in Excel format
  • 3 months of analyst support

TABLE OF CONTENTS

1 INTRODUCTION

  • 1.1 Study Assumptions and Market Definition
  • 1.2 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET INSIGHTS

  • 4.1 Market Overview
  • 4.2 Industry Attractiveness - Porter's Five Forces Analysis
    • 4.2.1 Bargaining Power of Suppliers
    • 4.2.2 Bargaining Power of Consumers
    • 4.2.3 Threat of New Entrants
    • 4.2.4 Threat of Substitute Products
    • 4.2.5 Intensity of Competitive Rivalry
  • 4.3 Industry Value Chain Analysis
  • 4.4 Impact of COVID-19 Aftereffects and Other Macroeconomic Factors on the Market

5 MARKET DYNAMICS

  • 5.1 Market Drivers
    • 5.1.1 Rising Demand for High-energy and Power-efficient Devices in the Automotive and Electronics Segment
    • 5.1.2 Increasing Demand for Green Energy Power Generation Drives the Market
  • 5.2 Market Challenges
    • 5.2.1 Rising Demand for Integrated Circuits

6 MARKET SEGMENTATION

  • 6.1 By Type
    • 6.1.1 Diode
    • 6.1.2 Small Signal Transistor
    • 6.1.3 Power Transistor
      • 6.1.3.1 MOSFET Power Transistor
      • 6.1.3.2 IGBT Power Transistor
      • 6.1.3.3 Other Power Transistor
    • 6.1.4 Rectifier
    • 6.1.5 Thyristor
  • 6.2 By End-user Vertical
    • 6.2.1 Automotive
    • 6.2.2 Consumer Electronics
    • 6.2.3 Communication
    • 6.2.4 Industrial
    • 6.2.5 Other End-user Verticals

7 COMPETITIVE LANDSCAPE

  • 7.1 Company Profiles
    • 7.1.1 On Semiconductor Corporation
    • 7.1.2 Infineon Technologies AG
    • 7.1.3 STMicroelectronics NV
    • 7.1.4 NXP Semiconductors NV
    • 7.1.5 Diodes Incorporated
    • 7.1.6 Toshiba Electronic Devices & Storage Corporation
    • 7.1.7 ABB Ltd.
    • 7.1.8 Nexperia BV
    • 7.1.9 Semikron Danfoss Holding A/S (Danfoss A/S)
    • 7.1.10 Eaton Corporation PLC
    • 7.1.11 Hitachi Energy Ltd. (Hitachi Ltd.)
    • 7.1.12 Mitsubishi Electric Corp.
    • 7.1.13 Fuji Electric Co Ltd
    • 7.1.14 Analog Devices, Inc.
    • 7.1.15 Vishay Intertechnology Inc.
    • 7.1.16 Renesas Electronics Corporation
    • 7.1.17 ROHM Co. Ltd
    • 7.1.18 Microchip Technology
    • 7.1.19 Qorvo Inc.
    • 7.1.20 Wolfspeed Inc.
    • 7.1.21 Texas Instruments Inc.
    • 7.1.22 Littelfuse Inc
    • 7.1.23 WeEn Semiconductors

8 INVESTMENT ANALYSIS

9 FUTURE OF THE MARKET