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市场调查报告书
商品编码
1868070
MRAM:全球市场份额和排名、总收入和需求预测(2025-2031 年)MRAM - Global Market Share and Ranking, Overall Sales and Demand Forecast 2025-2031 |
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2024 年全球 MRAM 市场规模估计为 2.5 亿美元,预计在 2025 年至 2031 年的预测期内将以 23.3% 的复合年增长率增长,到 2031 年将调整至 11.35 亿美元。
本报告全面评估了近期关税调整和国际战略反制措施对MRAM跨境产业基础、资本配置模式、区域经济相互依存关係和供应链重组的影响。
磁阻随机存取记忆体(MRAM)是一种基于磁阻效应的非挥发性储存技术,其核心单元为磁隧道接点(MTJ)。 MTJ由两层铁磁层夹在中间的绝缘隧道势垒层所构成。透过控制自由层和钉扎层的磁化方向平行或反平行,MTJ可以呈现低阻状态(逻辑0)或高阻状态(逻辑1),从而实现资料储存。
MRAM的技术发展经历了三代:
第一代:磁驱动型MRAM。写入资料时需要外部磁场,效率相对较低。
第二代:自旋转移力矩磁随机存取记忆体(STT-MRAM),利用垂直于磁隧道接面的电流来翻转磁矩,其速度接近SRAM,耐久性超过10^15次循环,目前已实现大规模商业性生产。
第三代:自旋轨道力矩磁阻随机存取记忆体(SOT-MRAM)和电压调节器异向性随机存取记忆体(VCMA-MRAM)。其中,SOT-MRAM利用面内电流产生自旋轨道力矩并反转磁矩,写入速度可达0.4奈秒,功耗仅为STT-MRAM的1%,并支援记忆体内运算。预计它将成为下一代主流技术。
与传统储存方式相比:
DRAM:易失性,需持续供电。 MRAM 可以取代 DRAM 作为非挥发性快取。
NAND快闪记忆体:写入速度慢(微秒级)且耐久性低;MRAM在即时资料储存场景中具有优势。
SRAM:速度快,但密度低,功耗高。 MRAM 则在效能和成本之间取得了良好的平衡,更适合嵌入式应用。
技术突破:
SOT-MRAM的商业化:台积电和工程院共同开发的SOT-MRAM写入速度仅0.4奈秒,功耗降低99%,目前正处于车规级检验阶段。东北大学开发的SOT-MRAM写入功耗低至156飞焦耳,是目前全球最低的写入功耗。
记忆体内运算整合:台积电将 SOT-MRAM 与运算架构集成,实现了直接记忆体内运算,能源效率提高了 10 倍以上,使其适用于 AI 边缘运算。
材料创新:石墨烯磁性复合材料可将读写速度提高 50%,功耗降低 30%。三维堆迭技术将装置尺寸缩小至奈米级,显着提高了密度。
市场驱动因素:
新兴应用需求:
人工智慧和边缘运算:MRAM 的低功耗和高速特性使其成为人工智慧推理晶片的理想选择。例如,阿里巴巴的嵌入式 MRAM 人工智慧晶片 PingTouGe,功耗降低了 62%。
物联网设备:预计到 2030 年,全球物联网设备数量将超过 5,000 亿,MRAM 的非挥发性和耐用性满足了感测器节点的要求。
政策支持:中国的「十四五」规划将MRAM定位为一项关键的新型储存技术。国家积体电路产业投资基金第二期拨款35亿元支持供应链发展,并在北京、上海等地设立了三个国家级研发中心。
挑战与衝突:
成本与製程:MRAM 的单位成本是 DRAM 的 35 倍。降低成本需要大规模生产(例如合肥昌鑫的 28nm 生产线)和国内材料生产(目前 75% 的钴、铁和硼靶材依赖进口)。
技术竞争:ReRAM 在记忆体运算领域发展迅速(例如,信玄半导体的车规级产品),FeRAM 也正在向汽车电子领域拓展。然而,MRAM 在速度和耐久性方面仍然具有优势。
标准与生态系统:JEDEC 发布了 SOT-MRAM 介面标准 JESD232,预计到 2025 年将形成一个完整的系统,并将促进供应商之间的兼容性。
本报告旨在按地区/国家、类型和应用程式对全球 MRAM 市场进行全面分析,重点关注总销售量、收入、价格、市场份额和主要企业的排名。
本报告以销售量(千台)和收入(百万美元)为单位,提供MRAM市场规模、估算和预测,基准年为2024年,并包含2020年至2031年期间的历史数据和预测数据。定量和定性分析相结合,有助于读者制定业务和成长策略,评估市场竞争,分析自身在当前市场中的地位,并就MRAM做出明智的商业决策。
市场区隔
公司
按类型分類的细分市场
应用领域
按地区
The global market for MRAM was estimated to be worth US$ 250 million in 2024 and is forecast to a readjusted size of US$ 1135 million by 2031 with a CAGR of 23.3% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on MRAM cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Magnetoresistive Random Access Memory (MRAM) is a non-volatile storage technology based on the magnetoresistive effect, with its core unit being a magnetic tunnel junction (MTJ), composed of two ferromagnetic layers sandwiching an insulating tunnel barrier layer. By controlling the magnetization direction of the free layer and the fixed layer to be parallel or antiparallel, the MTJ exhibits a low-resistance state (logic 0) or a high-resistance state (logic 1), thereby enabling data storage.
The technological evolution of MRAM has undergone three generations:
First generation: Magnetically driven MRAM, which requires an external magnetic field for writing and has relatively low efficiency.
Second generation: Spin-transfer torque MRAM (STT-MRAM), which flips the magnetic moment using a current perpendicular to the MTJ, has been commercially mass-produced, with speeds approaching SRAM and durability exceeding 1E15 cycles.
Third generation: Spin-orbit torque MRAM (SOT-MRAM) and voltage-controlled magnetic anisotropy MRAM (VCMA-MRAM). Among these, SOT-MRAM uses in-plane current to generate spin-orbit torque to flip the magnetic moment, achieving write speeds of up to 0.4 nanoseconds, with power consumption only 1% of STT-MRAM, and supports in-memory computing, making it the next-generation mainstream technology.
Comparison with traditional storage:
DRAM: Volatile, requires continuous power supply; MRAM can replace it as non-volatile cache.
NAND flash: Slow write speed (microseconds), low durability; MRAM has advantages in real-time data storage scenarios.
SRAM: Fast but low density and high power consumption; MRAM balances performance and cost in embedded applications.
Technological breakthroughs:
SOT-MRAM commercialization: TSMC and ITRI have developed SOT-MRAM with a write speed of 0.4 nanoseconds and a 99% reduction in power consumption, which has entered the automotive-grade verification phase. SOT-MRAM developed by Tohoku University in Japan has a write power consumption as low as 156 fJ, the lowest in the world.
In-memory computing integration: TSMC combines SOT-MRAM with computing architecture to enable direct in-memory computing, improving energy efficiency by over 10 times, suitable for AI edge computing.
Material innovation: Graphene magnetic composite materials increase read/write speeds by 50% and reduce power consumption by 30%; three-dimensional stacked structures reduce device sizes to the nanometer level, significantly increasing density.
Market drivers:
Emerging application demands:
AI and edge computing: MRAM's low power consumption and high-speed characteristics are well-suited for AI inference chips. For example, Alibaba's PingTouGe AI chip with integrated MRAM reduces power consumption by 62%.
IoT Devices: Global IoT devices are projected to exceed 500 billion units by 2030, with MRAM's non-volatility and durability meeting sensor node requirements.
Policy Support: China's 14th Five-Year Plan prioritizes MRAM as the leading new storage technology, with the second phase of the National Integrated Circuit Industry Investment Fund allocating 3.5 billion yuan to support supply chain development, and three national-level R&D centers established in Beijing, Shanghai, and other regions.
Challenges and competition:
Cost and process: The unit cost of MRAM is 35 times that of DRAM. Cost reduction requires large-scale production (e.g., Hefei Changxin's 28nm production line) and domestic material production (cobalt-iron-boron target materials currently have a 75% import dependency).
Technological Competition: ReRAM is making rapid progress in the field of compute-in-memory (e.g., XinYuan Semiconductor's automotive-grade products), and FeRAM is increasing its penetration in automotive electronics. However, MRAM still holds advantages in terms of speed and durability.
Standards and Ecosystem: JEDEC has released the SOT-MRAM interface standard JESD232, with a complete system expected to be established by 2025, promoting cross-vendor compatibility.
This report aims to provide a comprehensive presentation of the global market for MRAM, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of MRAM by region & country, by Type, and by Application.
The MRAM market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding MRAM.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of MRAM manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of MRAM in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of MRAM in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.