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市场调查报告书
商品编码
1494805
2030 年碳化硅市场预测:按产品、装置类型、牌号、晶圆尺寸、结晶结构、应用、最终用户和地区进行的全球分析Silicon Carbide Market Forecasts to 2030 - Global Analysis By Product, Device Type, Grade, Wafer Size, Crystal Structure, Application, End User and By Geography |
根据Stratistics MRC的数据,2024年全球碳化硅市场规模为17.4亿美元,预计预测期内复合年增长率为19.7%,到2030年将达到51.1亿美元。
碳化硅 (SiC) 是一种由硅和碳原子组成的化合物,具有卓越的性能,适合各种工业应用。 SiC 存在多种结晶结构,最常见的是六方晶系结构。 SiC 具有出色的硬度,使其成为研磨、切割和抛光应用的理想磨料。它具有高导热性和抗热衝击性,可用于耐火材料、炉部件和陶瓷窑炉工具等高温应用。
根据世界半导体贸易统计(WSTS)显示,全球半导体市场收益预计将达到5,883.6亿美元,比2023年的5,201.3亿美元成长13.12%。
日益关注能源效率和功率密度
随着业界寻求更环保、更有效率的解决方案,SiC 正成为传统硅基半导体的有前景的替代品。 SiC 具有更高的导热性、更低的功率损耗和更高的击穿电压等优异特性,使装置能够在更高的温度和电压下运行,同时保持效率。这使得从电动车到可再生能源系统的各种应用中的电子元件变得更小、更轻、更有效率。
製造成本高
SiC以其高导热性和耐用性等优异性能而闻名,广泛应用于电子、汽车和能源等多种行业。然而,生产SiC材料所涉及的复杂製造工艺,例如高温合成和严格的品管措施,导致製造成本不断上升。因此,製造商发现碳化硅产品很难获得有竞争力的价格,从而阻碍了市场的扩张和普及。
製造技术的进步
製造技术的进步正在促进碳化硅(SiC)市场的显着整合。 SiC 以其优异的导热性、耐高电压和低功率损耗而闻名,是半导体应用的关键材料。製造技术的进步,例如先进的掺杂方法和结晶生长工艺,正在导致 SiC 製造中材料品质的提高、产量比率的提高和成本的降低。此外,製造技术的创新正在推动基于碳化硅的装置的开发,这些元件具有更高的功率密度、更高的效率和更高的可靠性。
缺乏标准化
由于缺乏标准化,碳化硅(SiC)市场面临重大障碍。这种缺陷阻碍了碳化硅技术在各行业的广泛采用和有效利用。由于SiC材料、装置和製造流程的规格不标准化,导致产品品质、性能和相容性不一致。这种变化使供应链变得复杂,增加了製造成本,并损害了技术可靠性。然而,如果没有标准化的调查方法,消费者和企业都将很难评估和比较不同的SiC产品。
最初,全球供应链中断导致原材料短缺和製造流程中断,导致生产延误和成本上升。广泛的停工和经济不确定性减少了各个最终用户产业的需求,这些产业是碳化硅产品的重要消费者,包括汽车、电子和能源。然而,疫情加速了某些趋势,例如向电动车和再生能源来源的转变,并增加了电力电子和太阳能逆变器等应用对碳化硅的需求。
黑碳化硅细分市场预计将在预测期内成为最大的细分市场
由于黑碳化硅的高纯度和耐磨性,预计在预测期内将成为最大的细分市场。其优异的硬度和导热性使其成为磨俱、耐火材料衬里和半导体製造的理想材料。黑碳化硅增强的耐用性和耐高温性使其成为传统材料受到挑战的恶劣环境中的必备材料。此外,光电应用(尤其是太阳能板製造)的使用量不断增加也进一步提振了市场需求。
预计火焰探测器领域在预测期内复合年增长率最高。
预计火焰探测器领域在预测期内复合年增长率最高。这是因为这些侦测器利用 SiC 优异的导热性和高温稳定性来准确感测火焰并防止潜在危险。 SiC 优异的电气性能有助于开发高灵敏度和响应性的火焰侦测系统。随着业界越来越重视安全性和效率,对可靠的火焰侦测解决方案的需求持续成长,推动了碳化硅市场的成长。
碳化硅(SiC)因其高电压和低功率损耗在能源储存应用中越来越受到青睐,非常适合高功率、高温环境,在预测期内引领亚太地区主导市场占最大份额。随着亚太国家加强整合再生能源来源并建造更有效率的电网基础设施,对先进能源储存解决方案的需求至关重要。 SiC 能够提高锂离子电池和电力电子等能源储存系统的性能和效率,使其成为满足这些区域需求的关键推动者。
预计欧洲地区在估计期间将保持盈利成长。作为欧盟 (EU) 对永续性和减少温室气体排放承诺的一部分,对各行业(特别是汽车和能源产业)实施了严格的法规,以转向更清洁的技术。欧洲各国政府正在透过津贴、补贴和授权来鼓励采用基于 SiC 的装置,从而推动对 SiC 产品的需求。此外,促进电动车普及的法规正在加速汽车应用中对碳化硅电力电子装置的区域需求,进一步增强市场。
According to Stratistics MRC, the Global Silicon Carbide Market is accounted for $1.74 billion in 2024 and is expected to reach $5.11 billion by 2030 growing at a CAGR of 19.7% during the forecast period. Silicon carbide (SiC) is a compound comprised of silicon and carbon atoms, characterized by its remarkable properties suitable for various industrial applications. It exists in several crystalline structures, with the most common being hexagonal. SiC exhibits exceptional hardness, making it ideal for abrasive materials in grinding, cutting, and polishing applications. Its high thermal conductivity and resistance to thermal shock make it valuable in refractory materials and high-temperature applications, such as furnace components and ceramic kiln furniture.
According to the World Semiconductor Trade Statistics (WSTS), the revenue of the global semiconductor market is expected to register USD 588.36 billion, 13.12% higher than USD 520.13 billion in 2023.
Increasing focus on energy efficiency and power density
As industries seek greener and more efficient solutions, SiC emerges as a promising alternative to traditional silicon-based semiconductors. SiC's superior properties, including higher thermal conductivity, lower power losses, and higher breakdown voltage, enable devices to operate at higher temperatures and voltages while maintaining efficiency. This translates into smaller, lighter, and more efficient electronic components across various applications, from electric vehicles to renewable energy systems.
High production costs
SiC, known for its exceptional properties like high thermal conductivity and durability, finds applications across various industries such as electronics, automotive, and energy. However, the complex manufacturing process involved in producing SiC materials, including high-temperature synthesis and stringent quality control measures, contributes to elevated production expenses. As a result, manufacturers face difficulties in achieving competitive pricing for SiC products, hindering market expansion and adoption.
Advancements in manufacturing technologies
Advancements in manufacturing technologies are catalyzing significant enhancements in the Silicon Carbide (SiC) market. SiC, known for its exceptional thermal conductivity, high breakdown voltage, and low power losses, is a key material in semiconductor applications. The evolution of manufacturing techniques, such as advanced doping methods and crystal growth processes, has led to improved material quality, higher yield rates, and reduced costs in SiC production. Additionally, innovations in fabrication technologies enable the development of SiC-based devices with higher power density, increased efficiency, and enhanced reliability.
Lack of standardization
The Silicon Carbide (SiC) market faces significant hurdles due to the lack of standardization. This absence impedes widespread adoption and efficient utilization of SiC-based technologies across various industries. Without standardized specifications for SiC materials, devices, and manufacturing processes, there's a lack of uniformity in product quality, performance, and compatibility. This variance complicates supply chains, increases production costs, and undermines confidence in the technology's reliability. However, without standardized testing methodologies, evaluating and comparing different SiC products becomes challenging for consumers and businesses alike.
Initially, the disruption in the global supply chain led to shortages of raw materials and hindered manufacturing processes, causing production delays and escalating costs. Widespread lockdowns and economic uncertainties reduced demand from various end-user industries such as automotive, electronics, and energy, which are significant consumers of silicon carbide products. However, the pandemic also accelerated certain trends, such as the shift towards electric vehicles and renewable energy sources, driving up demand for silicon carbide in applications like power electronics and solar inverters.
The Black Silicon Carbide segment is expected to be the largest during the forecast period
Black Silicon Carbide segment is expected to be the largest during the forecast period due to its high purity and abrasive properties. Its superior hardness and thermal conductivity make it an ideal material for abrasive tools, refractory linings, and semiconductor manufacturing. Black silicon carbide offers enhanced durability and resistance to high temperatures, making it indispensable in demanding environments where traditional materials falter. Additionally, its growing usage in photovoltaic applications, particularly in solar panel production, is further propelling its market demand.
The Flame Detectors segment is expected to have the highest CAGR during the forecast period
Flame Detectors segment is expected to have the highest CAGR during the forecast period as these detectors utilize SiC's exceptional thermal conductivity and high-temperature stability to accurately sense flames and prevent potential hazards. SiC's superior electrical properties enable the development of highly sensitive and responsive flame detection systems. As industries increasingly prioritize safety and efficiency, the demand for reliable flame detection solutions continues to rise, propelling the growth of the Silicon Carbide Market.
Asia Pacific region commanded the largest share of the market over the extrapolated period as Silicon carbide (SiC) is increasingly favored in energy storage applications due to its high breakdown voltage and low power losses, making it ideal for high-power and high-temperature environments. As countries in Asia Pacific ramp up their efforts to integrate renewable energy sources and build more efficient grid infrastructure, the need for advanced energy storage solutions becomes paramount. SiC's ability to enhance the performance and efficiency of energy storage systems, such as lithium-ion batteries and power electronics, positions it as a key enabler in meeting these regional demands.
Europe region is projected to hold profitable growth during the estimation period. As part of the European Union's commitment to sustainability and reducing greenhouse gas emissions, strict regulations have been imposed on industries, particularly in automotive and energy sectors, to transition towards cleaner technologies. European governments are incentivizing the adoption of SiC-based devices through grants, subsidies, and mandates, driving demand for SiC products. Additionally, regulations promoting electric vehicle adoption are accelerating the regional demand for SiC-based power electronics in automotive applications, further bolstering the market.
Key players in the market
Some of the key players in Silicon Carbide market include Monolith Semiconductor Inc, China Southern Advanced Ceramic Technology Co., Ltd, CeramTec GmbH, Momentive Performance Materials Inc, Pallidus, Inc, Dow Chemical Company, Nippon Steel Corporation, Saint-Gobain Ceramics, SICC Materials Co., Ltd, Global Power Technologies Group, TankeBlue Semiconductor Co., Ltd, Microchip Technology Inc, AGSCO Corporation, Renesas Electronics Corporation and Toshiba Corporation.
In October 2023, Denso Corporation announced an investment of USD 500 million in Silicon Carbide LLC, Coherent Corp.'s silicon carbide (SiC) business, to ensure a long-term stable procurement of SiC wafers to enhance the competitiveness of its electrification components.
In May 2023, Saint-Gobain NORPRO, a business unit of Saint-Gobain Ceramics, announced the acquisition of 50.1% shares in SICAT GmbH & Co. KG, which manufactures beta silicon carbide and carbon catalyst supports. This acquisition was made to enable Saint-Gobain NORPRO to extend its carrier offerings within biofuel and clean energy spaces by adding beta SiC and Carbon products to its product portfolio.
In September 2022, SK Siltron, a global maker of semiconductor wafers, announced that it would invest USD 1.65 billion by 2026 and allocate USD 0.7 billion to build new wafer manufacturing in Gumi National Industrial Complex.
In March 2022, Microchip Technology, a leading provider of microcontroller, mixed-signal, analog, and Flash-IP solutions, announced the launch of 3.3 kV Silicon Carbide (SiC) power devices, which provide high efficiency and reliability and have the lowest resistance, helping customers to move to high-voltage SiC with speed and ease. These devices are small, light, provide more efficient power solutions, and help in electrified transportation, renewable energy, aerospace, and other industrial applications.
Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.