![]() |
市场调查报告书
商品编码
1755881
碳化硅 (SiC) 半导体装置市场预测(至 2032 年):按产品、组件、晶圆尺寸、电压范围、应用、最终用户和地区进行的全球分析Silicon Carbide Semiconductor Devices Market Forecasts to 2032 - Global Analysis By Product (Optoelectronic Devices, Power Semiconductors and Frequency Devices), Component, Wafer Size, Voltage Range, Application, End User and By Geography |
根据 Stratistics MRC 的数据,全球碳化硅 (SiC) 半导体装置市场预计在 2025 年达到 36 亿美元,到 2032 年将达到 160.4 亿美元,预测期内的复合年增长率为 23.8%。
碳化硅 (SiC) 半导体元件是由碳化硅(硅和碳的化合物)製成的先进电子元件,以其卓越的导热性、高电场强度和宽能带隙而闻名。这些元件包括二极体、MOSFET、功率模组等,由于其能够在比传统硅基元件更高的电压、温度和开关频率下工作,因此可用于高功率和高频应用。 SiC 半导体能够提高效率、减少能量损耗并实现紧凑的系统设计,使其成为电动车、可再生能源系统、工业马达驱动器以及性能和可靠性至关重要的航太应用的理想选择。
电动车(EV)的普及率迅速提高
电动车 (EV) 的日益普及正在加速 SiC(碳化硅)半导体装置市场的扩张。 SiC 装置能够提高效率、加快开关速度并增强导热性,使其成为逆变器、车载充电器和动力传动系统等电动车应用的理想选择。随着汽车製造商专注于提升效能、加快充电速度和延长续航里程,对 SiC 元件的需求也不断增长。市场正在不断扩大,SiC 半导体技术在电动车电力电子系统中的日益整合也刺激了其创新。
製造和材料成本高
高昂的製造成本和材料成本是阻碍SiC(碳化硅)半导体装置市场成长的主要因素。复杂的製造流程和高纯度碳化硅晶圆等原材料的昂贵价格,导致製造成本增加。这些高昂的成本限制了SiC的大规模应用,尤其是在中小型製造商中,削弱了市场竞争力。因此,成本敏感的应用往往倾向于采用传统的硅基替代品,这阻碍了SiC装置的广泛市场渗透。
可再生能源与电力电子
再生能源来源的日益普及以及电力电子技术的进步,正在推动碳化硅 (SiC) 半导体装置市场的发展。 SiC 装置具有高效率、快速开关和优异的热性能,使其成为太阳能逆变器、风力发电机和智慧电网应用的理想选择。全球脱碳趋势的日益增强,推动了可再生能源系统对 SiC 基解决方案的需求,从而刺激了技术创新,并扩大了清洁能源和电力电子领域的市场机会。
晶圆供应有限和品质问题
晶圆供应有限且持续存在的品质问题严重阻碍了SiC(碳化硅)半导体装置市场的成长。这些限制因素导致生产延迟、製造成本上升和产量比率下降,影响了供应链效率和整体市场的可扩展性。此外,由于无法满足电动车和电力电子等高成长领域日益增长的需求,也阻碍了技术进步,并抑制了SiC装置开发的潜在投资。
COVID-19的影响
新冠疫情最初扰乱了SiC(碳化硅)半导体装置市场,原因是供应链中断、工厂停工以及工业活动减少。然而,随着电动车和可再生能源领域对节能解决方案的需求不断增长,市场逐渐復苏。疫情加速了数位转型,并推动了SiC装置在高性能电子设备中的应用,使其在后谋杀时代更具韧性和适应性。
预计电源模组市场在预测期内将占据最大份额
功率模组领域预计将在预测期内占据最大的市场占有率,因为它们具有更高的能源效率、高压能力和卓越的热性能。这些模组可实现紧凑轻巧的设计,使其成为电动车、可再生能源系统和工业应用的理想选择。对快速开关速度和低能量损耗的需求日益增长,正在加速碳化硅功率模组的采用,从而推动技术进步并提高其与整体高性能电力电子系统的整合度。
预计预测期内 LED 照明领域将以最高的复合年增长率成长。
由于对高效电力电子装置的需求,预计LED照明领域将在预测期内实现最高成长率。 SiC装置具有高导热性、更高的耐压性和更高的能效,使其成为LED电源和驱动器的理想选择。随着节能照明日益普及,尤其是在商业和工业环境中,对可靠且紧凑的SiC基解决方案的需求也日益增长。
预计亚太地区将在预测期内占据最大的市场占有率,这得益于工业自动化水平的提高、电动汽车的广泛普及以及可再生能源的广泛应用。中国、日本和韩国等国在高效能电力电子领域的大力投资,增加了碳化硅元件的需求。政府鼓励绿色技术和能源效率的计划也推动了市场成长,使亚太地区成为碳化硅半导体开发和生产的主要枢纽。
预计北美地区在预测期内将实现最高的复合年增长率,这得益于电动车 (EV) 行业的扩张、可再生能源的普及以及工业自动化的进步。与传统硅相比,SiC 装置具有更高的效率、热性能和耐用性,使其成为高功率应用的理想选择。政府的支持性政策、智慧电网基础设施投资的增加以及对节能解决方案日益增长的需求,进一步刺激了市场应用,使北美成为 SiC 技术发展的关键枢纽。
According to Stratistics MRC, the Global Silicon Carbide Semiconductor Devices Market is accounted for $3.6 billion in 2025 and is expected to reach $16.04 billion by 2032 growing at a CAGR of 23.8% during the forecast period. Silicon Carbide (SiC) semiconductor devices are advanced electronic components made from silicon carbide, a compound of silicon and carbon known for its exceptional thermal conductivity, high electric field strength, and wide bandgap. These devices, including diodes, MOSFETs, and power modules, are used in high-power and high-frequency applications due to their ability to operate at higher voltages, temperatures, and switching frequencies compared to traditional silicon-based devices. SiC semiconductors offer improved efficiency, reduced energy losses, and compact system designs, making them ideal for electric vehicles, renewable energy systems, industrial motor drives, and aerospace applications where performance and reliability are critical.
Surging Electric Vehicle (EV) Adoption
The growing popularity of electric vehicles (EVs) is accelerating the expansion of the Silicon Carbide (SiC) semiconductor device market. SiC devices offer improved efficiency, faster switching, and stronger thermal conductivity, making them excellent for EV applications like inverters, onboard chargers, and powertrains. The demand for SiC components is increasing as automakers place a higher priority on enhanced performance, faster charging, and longer range. The market is expanding and SiC semiconductor technology innovation is being stimulated by this increasing integration in EV power electronics.
High Manufacturing & Material Costs
High manufacturing and material costs significantly hinder the growth of the Silicon Carbide (SiC) Semiconductor Devices Market. The complex fabrication process and the expensive nature of raw materials like high-purity silicon carbide wafers lead to increased production expenses. These high costs limit mass adoption, especially among small and mid-sized manufacturers, and constrain market competitiveness. Consequently, cost-sensitive applications tend to favor traditional silicon-based alternatives, impeding broader market penetration of SiC devices.
Renewable Energy & Power Electronics
The growing adoption of renewable energy sources and advancements in power electronics are significantly propelling the Silicon Carbide (SiC) Semiconductor Devices Market. SiC devices offer high efficiency, faster switching, and better thermal performance, making them ideal for solar inverters, wind turbines, and smart grid applications. As the global push toward decarbonization intensifies, the demand for SiC-based solutions in renewable energy systems rises, driving innovation and expanding market opportunities across the clean energy and power electronics sectors.
Limited Wafer Supply & Quality Issues
Limited wafer supply and persistent quality issues are significantly hindering the growth of the Silicon Carbide (SiC) semiconductor devices market. These constraints lead to production delays, increased manufacturing costs, and reduced yield rates, affecting supply chain efficiency and overall market scalability. Moreover, the inability to meet rising demand from high-growth sectors like electric vehicles and power electronics hampers technological advancements and discourages potential investments in SiC device development.
Covid-19 Impact
The COVID-19 pandemic initially disrupted the Silicon Carbide (SiC) Semiconductor Devices Market due to supply chain interruptions, factory shutdowns, and reduced industrial activities. However, the market gradually rebounded with increased demand for energy-efficient solutions in electric vehicles and renewable energy. The pandemic accelerated digital transformation, boosting the adoption of SiC devices in high-performance electronics, leading to a resilient and adaptive recovery in the post-COVID landscape.
The power modules segment is expected to be the largest during the forecast period
The power modules segment is expected to account for the largest market share during the forecast period as it offers enhanced energy efficiency, high voltage capability, and superior thermal performance. These modules enable compact, lightweight designs, making them ideal for electric vehicles, renewable energy systems, and industrial applications. The rising demand for fast switching speeds and lower energy losses is accelerating the adoption of SiC power modules, thereby driving technological advancements and increasing their integration across high-performance power electronics systems.
The LED lighting segment is expected to have the highest CAGR during the forecast period
Over the forecast period, the LED lighting segment is predicted to witness the highest growth rate, due to demand for power electronics with great efficiency. SiC devices are perfect for LED power supply and drivers because of their enhanced thermal conductivity, increased voltage tolerance, and increased energy efficiency. The need for dependable and small SiC-based solutions increases as energy-efficient lighting becomes more widely used, particularly in commercial and industrial settings.
During the forecast period, the Asia Pacific region is expected to hold the largest market share because of improvements in industrial automation, the growing use of electric cars, and the incorporation of renewable energy. Demand for SiC devices is increasing as a result of significant investments made in high-efficiency power electronics by nations like China, Japan, and South Korea. Government programs encouraging green technology and energy efficiency also hasten market growth, establishing Asia Pacific as a major center for the development and production of SiC semiconductors.
Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, owing to expanding electric vehicle (EV) sector, renewable energy adoption, and advancements in industrial automation. SiC devices offer superior efficiency, thermal performance, and durability compared to traditional silicon, making them ideal for high-power applications. Supportive government policies, increasing investments in smart grid infrastructure, and rising demand for energy-efficient solutions are further accelerating market adoption, positioning North America as a key hub for SiC technology development.
Key players in the market
Some of the key players profiled in the Silicon Carbide Semiconductor Devices Market include Wolfspeed, Inc., STMicroelectronics, Infineon Technologies AG, ON Semiconductor, ROHM Semiconductor, Mitsubishi Electric Corporation, Toshiba Corporation, Littelfuse, Inc., Fuji Electric Co., Ltd., Renesas Electronics Corporation, Microchip Technology Inc., United Silicon Carbide, Inc., Power Integrations, Inc., Global Power Technologies Group, SemiQ Inc., Diodes Incorporated and Alpha and Omega Semiconductor.
In February 2025, Mitsubishi Electric has reached an agreement with HD Renewable Energy, a Taipei-based solar power and battery energy storage systems (BESS) developer, to collaborate on projects aimed at achieving carbon neutrality.
In January 2025, Mitsubishi Electric Corporation, has announced plans to acquire a strategic stake in Bengaluru based Gervigreind Data Science Pvt. Ltd. This collaboration focuses on co developing and marketing no code data analysis and report generation tools that integrate seamlessly with Mitsubishi Electric's factory automation (FA) equipment and GENESIS64(TM) SCADA software-developed by ICONICS, its U.S.
Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.