查看购物车
  • Traditional Chinese
  • English
  • Japanese
封面
市场调查报告书
商品编码
1787890

2032 年碳化硅设备市场预测：按产品类型、额定电压、材料、製造方法、功率范围、应用和地区进行的全球分析

Silicon Carbide Devices Market Forecasts to 2032 - Global Analysis By Product Type, Voltage Rating, Material, Production Method, Power Range, Application and By Geography
出版日期: | 出版商: Stratistics Market Research Consulting | 英文 200+ Pages | 商品交期: 2-3个工作天内

价格

根据 Stratistics MRC 的数据，全球碳化硅 (SiC) 设备市场预计在 2025 年达到 40.2 亿美元，到 2032 年将达到 188.8 亿美元，预测期内的复合年增长率为 24.7%。

碳化硅元件是公认的先进半导体元件，在高功率、高温和高频应用中性能卓越。碳化硅元件具有优异的性能，包括比传统硅基元件更宽的带隙、更高的热导率和更强的电场击穿强度。这些优势使碳化硅元件成为电动车、电力电子、可再生能源系统和航太应用的理想选择，使其在恶劣条件下也能更有效率、更可靠地运作。此外，由于碳化硅技术能够降低能量损耗并提高功率密度，因此它在下一代电子系统中的应用日益普及。

根据美国能源局的情况说明书，SiC 电力电子装置可承受高达 600°C 的结温，并可在高电压、高开关频率和高电流密度下运行，这些功能可显着提高电力系统的能源效率。

扩大电动车（EV）的使用

SiC 装置市场的主要驱动力之一是电动车 (EV) 产业。基于 SiC 的 MOSFET 和二极体越来越多地应用于电动车动力传动系统、车载电池充电器 (OBC) 和直流-直流转换器，因为它们能够承受比传统硅元件更高的电压和温度，从而提高效率并最大限度地减少能量损失。更长的续航里程、更小的冷却系统以及快速充电都是这些特性带来的优势，也是电动车市场的关键卖点。此外，随着全球电动车产量持续成长以及政府法规日益支持电气化，预计 SiC 装置的需求将激增。

製造和材料成本过高

与传统的硅基元件相比，SiC元件的高製造成本是其广泛应用的最大障碍之一。 SiC晶体生长困难，加工过程耗时长，且良产量比率，使得生产高品质SiC晶圆的成本显着提高。例如，SiC晶圆需要高温化学气相沉积 (CVD) 工艺，难以获得无缺陷的晶体结构，而硅晶圆则可以透过成熟且经济优化的基础设施来实现量产。此外，SiC基板和外延层的成本比硅高出数倍。

与智慧电网和可再生能源系统的整合

随着全球能源结构向再生能源来源转型，碳化硅 (SiC) 装置的定位是提高太阳能逆变器、风力发电机、电池储能係统和智慧电网应用的功率转换效率和系统可靠性。尤其是在公用事业规模的装置中，基于碳化硅的元件可以在更高的电压和频率下工作，从而实现更紧凑、更高效的逆变器。此外，智慧电网现代化需要高性能电力电子装置，以实现快速开关、精确控制和双向功率流动——而这些都是碳化硅的优势。清洁能源和电网弹性正获得政府和能源公司的大量投资，为碳化硅技术在这些领域的发展创造了强劲的环境。

供应链薄弱和材料短缺

高纯度SiC基板和晶圆仍由少数供应商生产，这使得SiC供应链高度受限且集中。贸易限制、自然灾害、劳动力短缺或地缘政治不稳定导致的供应中断，可能会严重影响设备可用性和成本。新冠疫情等事件揭露了国际半导体供应链的弱点，本已竞争激烈的SiC晶圆市场也可能受到类似中断的影响。此外，SiC晶圆製造耗能且耗时，难以快速扩大规模，并且容易受到不可预见的需求激增和物流问题的影响。

COVID-19的影响

新冠疫情对碳化硅设备市场产生了许多重大影响。工厂关闭、劳动力短缺和供应链中断造成了短期市场波动，主要影响了碳化硅晶圆和设备的生产和交付。这些限制措施导致工业製造、汽车和其他行业出现瓶颈，并导致正在进行的计划延期。然而，疫情也加速了向电气化、可再生能源和数位基础设施转变等长期趋势。随着经济开始復苏，对永续技术和稳健供应链的日益重视刺激了公共和私营部门对碳化硅製造业的投资，为疫情后的强劲成长铺平了道路。

预计 SiC MOSFET 市场在预测期内将占据最大份额

预计碳化硅 (SiC) MOSFET 领域将在预测期内占据最大市场占有率，这得益于其在高压、高效应用中的广泛应用，主要应用于马达驱动器、工业电源、可再生能源系统和电动车 (EV)。这些电晶体的性能优于传统的硅基 MOSFET，因为它们具有更快的开关速度、更低的传导损耗以及更高的工作温度和电压。此外，随着汽车製造商和电力系统设计师日益追求电气化和能源效率，对碳化硅 MOSFET 的需求也快速成长，使其成为碳化硅元件生态系统的关键产品类型。

预计化学气相沉积（CVD）领域在预测期内的复合年增长率最高

预计化学气相沉积 (CVD) 领域将在预测期内实现最高成长率。製造先进的 SiC 功率元件（例如 MOSFET 和肖特基二极体）需要在 SiC基板上沉积高品质的外延层，而 CVD 是这项製程的关键。此製程可精确控制层厚度、掺杂浓度和均匀性，从而製造工业电力电子、可再生能源系统和电动车所需的高压、低缺陷装置。此外，随着对高性能 SiC 装置的需求不断增长，尤其是在汽车和能源领域，CVD 满足严格品质和效率要求的能力也推动了其应用。

占比最高的地区

预计亚太地区将在预测期内占据最大的市场占有率，这得益于其在电力电子、工业自动化和电动车生产领域的强劲表现。在政府的大力支持、快速的工业化进程以及罗姆、三菱电机和意法半导体等领先企业的推动下，中国、日本和韩国等国家在碳化硅设备消费和生产方面处于领先地位。此外，由于国内半导体製造和技术基础设施投资的不断增加，亚太地区已成为碳化硅创新、製造和终端用户应用的主要枢纽，确保了该地区在全球市场占有率中的持续主导地位。

复合年增长率最高的地区

在预测期内，受国防、航太、可再生能源和电动车技术快速发展的推动，北美预计将呈现最高的复合年增长率。强而有力的政府项目，例如美国《晶片法案》和美国能源部优先支持碳化硅（SiC）等宽能带隙技术的资助项目，正在支持该地区半导体製造的在地化。为了减少对海外供应链的依赖，Wolfspeed、安森美半导体和通用电气等领先公司正在加强其在美国的碳化硅製造能力和研发活动。此外，北美对战略国防技术和高效能能源基础设施的日益重视也推动了对碳化硅设备的需求，使其成为预测期内成长最快的地区。

免费客製化服务

订阅此报告的客户可享有以下免费自订选项之一：

  • 公司简介
    • 对最多三家其他市场参与企业进行全面分析
    • 主要企业的SWOT分析（最多3家公司）
  • 区域细分
    • 根据客户兴趣对主要国家进行的市场估计、预测和复合年增长率（註：基于可行性检查）
  • 竞争基准化分析
    • 透过产品系列、地理分布和策略联盟对主要企业基准化分析

目录

第一章执行摘要

第二章 前言

  • 概述
  • 相关利益者
  • 调查范围
  • 调查方法
    • 资料探勘
    • 数据分析
    • 数据检验
    • 研究途径
  • 研究材料
    • 主要研究资料
    • 二手研究资料
    • 先决条件

第三章市场走势分析

  • 介绍
  • 驱动程式
  • 抑制因素
  • 机会
  • 威胁
  • 产品分析
  • 应用分析
  • 新兴市场
  • COVID-19的影响

第四章 波特五力分析

  • 供应商的议价能力
  • 买方的议价能力
  • 替代品的威胁
  • 新进入者的威胁
  • 竞争对手之间的竞争

5. 全球碳化硅设备市场（依产品类型）

  • 介绍
  • SiC MOSFET
  • SiC模组
  • SiC分立元件
  • SiC二极体/肖特基势垒二极体
  • 其他的

6. 全球碳化硅设备市场（依额定电压）

  • 介绍
  • 最大650V
  • 650V～1200V
  • 1,200V～1,700V
  • 1,700V 或以上

7. 全球碳化硅设备市场（依材料）

  • 介绍
  • 黑碳化硅
  • 绿碳化硅
  • 其他的

8. 全球碳化硅设备市场（依生产方法）

  • 介绍
  • 艾奇逊法案
  • 物理蒸气传输（PVT）
  • 化学气相沉积（CVD）
  • 其他製造方法

9. 全球碳化硅设备市场（依功率范围）

  • 介绍
  • 低功率（1kW或以下）
  • 中功率（1kW至50kW）
  • 高功率（超过50kW）

第十章 全球碳化硅设备市场（依应用）

  • 介绍
  • 车
    • 电动车（EV）
    • 内燃机汽车（ICE）
    • 混合动力汽车
  • 产业
  • 能源公共产业
    • 可再生能源
    • 配电和输电
    • 电动车充电基础设施
  • 航太和国防
  • 家用电子电器
  • 其他的

第11章全球碳化硅设备市场（按区域）

  • 介绍
  • 北美洲
    • 美国
    • 加拿大
    • 墨西哥
  • 欧洲
    • 德国
    • 英国
    • 义大利
    • 法国
    • 西班牙
    • 其他欧洲国家
  • 亚太地区
    • 日本
    • 中国
    • 印度
    • 澳洲
    • 纽西兰
    • 韩国
    • 其他亚太地区
  • 南美洲
    • 阿根廷
    • 巴西
    • 智利
    • 南美洲其他地区
  • 中东和非洲
    • 沙乌地阿拉伯
    • 阿拉伯聯合大公国
    • 卡达
    • 南非
    • 其他中东和非洲地区

第十二章 重大进展

  • 协议、伙伴关係、合作和合资企业
  • 收购与合併
  • 新产品发布
  • 业务扩展
  • 其他关键策略

第十三章：公司概况

  • Infineon Technologies AG
  • NXP Semiconductors
  • Microchip Technology Inc.
  • BASiC Semiconductor Co., Ltd.
  • Renesas Electronics Corporation
  • Fuji Electric Co., Ltd.
  • ON Semiconductor
  • Mitsubishi Electric Corporation
  • Coherent Corp.
  • Wolfspeed, Inc.
  • STMicroelectronics NV
  • ROHM Co., Ltd.
  • Toshiba Corporation
  • GeneSiC Semiconductor Inc.
  • Littelfuse, Inc.
Product Code: SMRC30155

According to Stratistics MRC, the Global Silicon Carbide (SiC) Devices Market is accounted for $4.02 billion in 2025 and is expected to reach $18.88 billion by 2032 growing at a CAGR of 24.7% during the forecast period. Advanced semiconductor components known for their remarkable performance in high-power, high-temperature, and high-frequency applications are silicon carbide (SiC) devices. SiC has a better characteristic than conventional silicon-based devices, including a wider band gap, increased thermal conductivity, and a stronger electric field breakdown. SiC devices are perfect for use in electric vehicles, power electronics, renewable energy systems, and aerospace applications because of these benefits, which allow them to function more effectively and dependably under challenging conditions. Moreover, SiC technology is becoming more and more popular in next-generation electronic systems due to its capacity to lower energy losses and boost power density.

According to a fact sheet by the U.S. Department of Energy, SiC power electronic devices can withstand junction temperatures up to 600 °C and can operate at higher voltage, higher switching frequency, and with greater current density. These capabilities lead to significant energy efficiency gains in power systems.

Market Dynamics:

Driver:

Growing uptake of electric cars (EVs)

One of the major factors propelling the market for SiC devices is the electric vehicle (EV) industry. Because SiC-based MOSFETs and diodes can withstand higher voltages and temperatures than conventional silicon devices, improve efficiency, and minimize energy losses, they are being utilized more and more in EV powertrains, on-board chargers (OBCs), and DC-DC converters. Longer driving ranges, smaller cooling systems, and quicker charging are all benefits of these characteristics that are important selling points in the EV market. Additionally, the demand for SiC devices is anticipated to rise sharply as EV production continues to increase globally and government regulations favor electrification more and more.

Restraint:

Exorbitant production and material expenses

The high cost of manufacturing SiC devices in comparison to conventional silicon-based components is one of the biggest obstacles preventing their widespread use. Because SiC crystals are difficult to grow, processing takes longer, and yields are lower, the cost of producing high-quality SiC wafers is significantly higher. For example, SiC wafers need high-temperature chemical vapor deposition (CVD) and have difficulties in obtaining defect-free crystal structures, whereas silicon wafers are mass-produced on well-established and economically optimized infrastructure. Furthermore, SiC substrates and epitaxial layers continue to be several times more expensive than silicon.

Opportunity:

Integration with smart grid and renewable energy systems

SiC devices are positioned to improve power conversion efficiency and system reliability in solar inverters, wind turbines, battery storage systems, and smart grid applications as the world's energy mix moves toward renewable sources. Particularly in utility-scale installations, SiC-based components can function at higher voltages and frequencies, enabling more compact and effective inverters. Moreover, the modernization of the smart grid necessitates high-performance power electronics that can facilitate fast switching, precise control, and bi-directional power flow-all of which are advantages of SiC. Clean energy and grid resiliency are receiving significant investments from governments and energy companies, which is fostering a strong growth environment for SiC technologies in these fields.

Threat:

Supply chain weaknesses and material scarcity

High-purity SiC substrates and wafers are still produced by a small number of suppliers, making the SiC supply chain still rather constrained and concentrated. The availability and cost of devices can be greatly impacted by disruptions in this supply, which can be brought on by trade restrictions, natural disasters, labor shortages, or geopolitical instability. Events like the COVID-19 pandemic, for instance, revealed weaknesses in international semiconductor supply chains, and the already competitive SiC wafer market may be impacted by similar disruptions. Furthermore, SiC wafer manufacturing's energy-intensive and time-consuming nature prevents quick scale-up, leaving the sector susceptible to unforeseen demand spikes or logistical problems.

Covid-19 Impact:

In the market for silicon carbide (SiC) devices, the COVID-19 pandemic had a mixed but noticeable effect. Factory closures, labor shortages, and supply chain disruptions caused short-term market disruptions that primarily affected the manufacturing and delivery of SiC wafers and devices. These limitations resulted in bottlenecks in industries like industrial manufacturing and the automotive sector as well as delays in ongoing projects. But long-term trends like the move toward electrification, renewable energy, and digital infrastructure-all of which depend on SiC devices to enable high-efficiency power conversion-were also accelerated by the pandemic. The increased emphasis on sustainable technologies and robust supply chains as economies started to recover spurred both public and private investment in SiC manufacturing, paving the way for strong post-pandemic growth.

The SiC MOSFETs segment is expected to be the largest during the forecast period

The SiC MOSFETs segment is expected to account for the largest market share during the forecast period, mainly due to their extensive use in high-voltage, high-efficiency applications like motor drives, industrial power supplies, renewable energy systems, and electric vehicles (EVs). By enabling faster switching speeds, lower conduction losses, and operation at higher temperatures and voltages, these transistors outperform conventional silicon MOSFETs. Moreover, the demand for SiC MOSFETs is rising quickly as automakers and power system designers move more and more toward electrification and energy efficiency, making them the leading product category in the larger SiC device ecosystem.

The chemical vapor deposition (CVD) segment is expected to have the highest CAGR during the forecast period

Over the forecast period, the chemical vapor deposition (CVD) segment is predicted to witness the highest growth rate. In order to produce sophisticated SiC power devices like MOSFETs and Schottky diodes, high-quality epitaxial layers must be deposited on SiC substrates, and CVD is vital to this process. In order to create high-voltage, low-defect devices that are needed in industrial power electronics, renewable energy systems, and electric vehicles, this process enables exact control over layer thickness, doping levels, and uniformity. Additionally, the ability of CVD to meet stringent quality and efficiency requirements is driving its adoption as the need for higher-performance SiC devices increases, particularly in the automotive and energy sectors.

Region with largest share:

During the forecast period, the Asia-Pacific region is expected to hold the largest market share, propelled by its robust presence in power electronics, industrial automation, and the production of electric vehicles. Due to strong government support, quick industrialization, and the presence of significant players like ROHM, Mitsubishi Electric, and STMicroelectronics, nations like China, Japan, and South Korea are at the forefront of SiC device consumption and production. Furthermore, Asia-Pacific is now a major center for SiC innovation, fabrication, and end-user applications due to rising investments in domestic semiconductor manufacturing and technology infrastructure, guaranteeing the region's sustained dominance in the global market share.

Region with highest CAGR:

Over the forecast period, the North America region is anticipated to exhibit the highest CAGR, propelled by quick developments in defense, aerospace, renewable energy, and electric car technologies. Strong government programs, like the U.S. CHIPS Act and Department of Energy funding programs that give priority to wide-bandgap technologies like SiC, help the region localize semiconductor manufacturing. In an effort to lessen dependency on foreign supply chains, major companies like Wolfspeed, ON Semiconductor, and General Electric are increasing their SiC manufacturing capabilities and R&D activities in the United States. Moreover, the demand for SiC devices is also being driven by North America's increasing emphasis on strategic defense technologies and high-efficiency energy infrastructure, which will make it the region with the fastest rate of growth during the forecast period.

Key players in the market

Some of the key players in Silicon Carbide (SiC) Devices Market include Infineon Technologies AG, NXP Semiconductors, Microchip Technology Inc., BASiC Semiconductor Co., Ltd., Renesas Electronics Corporation, Fuji Electric Co., Ltd., ON Semiconductor, Mitsubishi Electric Corporation, Coherent Corp., Wolfspeed, Inc., STMicroelectronics N.V., ROHM Co., Ltd., Toshiba Corporation, GeneSiC Semiconductor Inc. and Littelfuse, Inc.

Key Developments:

In June 2025, NXP Semiconductors has announced the conclusion of the acquisition of Vienna-based TTTech Auto, a pioneer in the development of distinctive safety-critical technologies and middleware for software-defined vehicles (SDVs). The open and modular NXP CoreRide platform and TTTech Auto's MotionWise safety middleware help automakers get past obstacles to software and hardware integration while lowering complexity and development efforts and boosting the scalability and cost-effectiveness needed for next-generation vehicles.

In May 2025, Fuji Electric Co. Ltd (Fuji Electric) has been awarded the contract to supply the complete set of power generation equipment for the Muara Laboh Stage 2 geothermal power project of PT Supreme Energy Muara Laboh (SEML) in West Sumatra, Indonesia. The project has a planned installed capacity of 80 MW and is targeting commercial operations by 2027.

In February 2025, Teradyne and Infineon Technologies AG have announced that they have entered into a strategic agreement to advance power semiconductor test. As part of the agreement, Teradyne will acquire part of Infineon's automated test equipment team in Regensburg, Germany. For its part, Infineon will enter into a service agreement to secure continued manufacturing support as well as enhanced flexibility to respond to internal demand for this specialized test equipment as well as benefit from Teradyne's economy of scale.

Product Types Covered:

  • SiC MOSFETs
  • SiC Modules
  • SiC Discrete Devices
  • SiC Diodes / Schottky Barrier Diodes
  • Other Product Types

Voltage Ratings Covered:

  • Up to 650V
  • 650V-1200V
  • 1200V-1700V
  • Above 1700V

Materials Covered:

  • Black Silicon Carbide
  • Green Silicon Carbide
  • Other Materials

Production Methods Covered:

  • Acheson Process
  • Physical Vapor Transport (PVT)
  • Chemical Vapor Deposition (CVD)
  • Other Production Methods

Power Ranges Covered:

  • Low Power (<1 kW)
  • Medium Power (1 kW-50 kW)
  • High Power (>50 kW)

Applications Covered:

  • Automotive
  • Industrial
  • Energy & Utilities
  • Aerospace & Defense
  • Consumer Electronics
  • Other Applications

Regions Covered:

  • North America
    • US
    • Canada
    • Mexico
  • Europe
    • Germany
    • UK
    • Italy
    • France
    • Spain
    • Rest of Europe
  • Asia Pacific
    • Japan
    • China
    • India
    • Australia
    • New Zealand
    • South Korea
    • Rest of Asia Pacific
  • South America
    • Argentina
    • Brazil
    • Chile
    • Rest of South America
  • Middle East & Africa
    • Saudi Arabia
    • UAE
    • Qatar
    • South Africa
    • Rest of Middle East & Africa

What our report offers:

  • Market share assessments for the regional and country-level segments
  • Strategic recommendations for the new entrants
  • Covers Market data for the years 2024, 2025, 2026, 2028, and 2032
  • Market Trends (Drivers, Constraints, Opportunities, Threats, Challenges, Investment Opportunities, and recommendations)
  • Strategic recommendations in key business segments based on the market estimations
  • Competitive landscaping mapping the key common trends
  • Company profiling with detailed strategies, financials, and recent developments
  • Supply chain trends mapping the latest technological advancements

Free Customization Offerings:

All the customers of this report will be entitled to receive one of the following free customization options:

  • Company Profiling
    • Comprehensive profiling of additional market players (up to 3)
    • SWOT Analysis of key players (up to 3)
  • Regional Segmentation
    • Market estimations, Forecasts and CAGR of any prominent country as per the client's interest (Note: Depends on feasibility check)
  • Competitive Benchmarking
    • Benchmarking of key players based on product portfolio, geographical presence, and strategic alliances

Table of Contents

1 Executive Summary

2 Preface

  • 2.1 Abstract
  • 2.2 Stake Holders
  • 2.3 Research Scope
  • 2.4 Research Methodology
    • 2.4.1 Data Mining
    • 2.4.2 Data Analysis
    • 2.4.3 Data Validation
    • 2.4.4 Research Approach
  • 2.5 Research Sources
    • 2.5.1 Primary Research Sources
    • 2.5.2 Secondary Research Sources
    • 2.5.3 Assumptions

3 Market Trend Analysis

  • 3.1 Introduction
  • 3.2 Drivers
  • 3.3 Restraints
  • 3.4 Opportunities
  • 3.5 Threats
  • 3.6 Product Analysis
  • 3.7 Application Analysis
  • 3.8 Emerging Markets
  • 3.9 Impact of Covid-19

4 Porters Five Force Analysis

  • 4.1 Bargaining power of suppliers
  • 4.2 Bargaining power of buyers
  • 4.3 Threat of substitutes
  • 4.4 Threat of new entrants
  • 4.5 Competitive rivalry

5 Global Silicon Carbide (SiC) Devices Market, By Product Type

  • 5.1 Introduction
  • 5.2 SiC MOSFETs
  • 5.3 SiC Modules
  • 5.4 SiC Discrete Devices
  • 5.5 SiC Diodes / Schottky Barrier Diodes
  • 5.6 Other Product Types

6 Global Silicon Carbide (SiC) Devices Market, By Voltage Rating

  • 6.1 Introduction
  • 6.2 Up to 650V
  • 6.3 650V-1200V
  • 6.4 1200V-1700V
  • 6.5 Above 1700V

7 Global Silicon Carbide (SiC) Devices Market, By Material

  • 7.1 Introduction
  • 7.2 Black Silicon Carbide
  • 7.3 Green Silicon Carbide
  • 7.4 Other Materials

8 Global Silicon Carbide (SiC) Devices Market, By Production Method

  • 8.1 Introduction
  • 8.2 Acheson Process
  • 8.3 Physical Vapor Transport (PVT)
  • 8.4 Chemical Vapor Deposition (CVD)
  • 8.5 Other Production Methods

9 Global Silicon Carbide (SiC) Devices Market, By Power Range

  • 9.1 Introduction
  • 9.2 Low Power (<1 kW)
  • 9.3 Medium Power (1 kW-50 kW)
  • 9.4 High Power (>50 kW)

10 Global Silicon Carbide (SiC) Devices Market, By Application

  • 10.1 Introduction
  • 10.2 Automotive
    • 10.2.1 Electric Vehicles (EVs)
    • 10.2.2 Internal Combustion Engine Vehicles (ICE)
    • 10.2.3 Hybrid Vehicles
  • 10.3 Industrial
  • 10.4 Energy & Utilities
    • 10.4.1 Renewable Energy
    • 10.4.2 Power Distribution & Transmission
    • 10.4.3 EV Charging Infrastructure
  • 10.5 Aerospace & Defense
  • 10.6 Consumer Electronics
  • 10.7 Other Applications

11 Global Silicon Carbide (SiC) Devices Market, By Geography

  • 11.1 Introduction
  • 11.2 North America
    • 11.2.1 US
    • 11.2.2 Canada
    • 11.2.3 Mexico
  • 11.3 Europe
    • 11.3.1 Germany
    • 11.3.2 UK
    • 11.3.3 Italy
    • 11.3.4 France
    • 11.3.5 Spain
    • 11.3.6 Rest of Europe
  • 11.4 Asia Pacific
    • 11.4.1 Japan
    • 11.4.2 China
    • 11.4.3 India
    • 11.4.4 Australia
    • 11.4.5 New Zealand
    • 11.4.6 South Korea
    • 11.4.7 Rest of Asia Pacific
  • 11.5 South America
    • 11.5.1 Argentina
    • 11.5.2 Brazil
    • 11.5.3 Chile
    • 11.5.4 Rest of South America
  • 11.6 Middle East & Africa
    • 11.6.1 Saudi Arabia
    • 11.6.2 UAE
    • 11.6.3 Qatar
    • 11.6.4 South Africa
    • 11.6.5 Rest of Middle East & Africa

12 Key Developments

  • 12.1 Agreements, Partnerships, Collaborations and Joint Ventures
  • 12.2 Acquisitions & Mergers
  • 12.3 New Product Launch
  • 12.4 Expansions
  • 12.5 Other Key Strategies

13 Company Profiling

  • 13.1 Infineon Technologies AG
  • 13.2 NXP Semiconductors
  • 13.3 Microchip Technology Inc.
  • 13.4 BASiC Semiconductor Co., Ltd.
  • 13.5 Renesas Electronics Corporation
  • 13.6 Fuji Electric Co., Ltd.
  • 13.7 ON Semiconductor
  • 13.8 Mitsubishi Electric Corporation
  • 13.9 Coherent Corp.
  • 13.10 Wolfspeed, Inc.
  • 13.11 STMicroelectronics N.V.
  • 13.12 ROHM Co., Ltd.
  • 13.13 Toshiba Corporation
  • 13.14 GeneSiC Semiconductor Inc.
  • 13.15 Littelfuse, Inc.

List of Tables

  • Table 1 Global Silicon Carbide (SiC) Devices Market Outlook, By Region (2024-2032) ($MN)
  • Table 2 Global Silicon Carbide (SiC) Devices Market Outlook, By Product Type (2024-2032) ($MN)
  • Table 3 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC MOSFETs (2024-2032) ($MN)
  • Table 4 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Modules (2024-2032) ($MN)
  • Table 5 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Discrete Devices (2024-2032) ($MN)
  • Table 6 Global Silicon Carbide (SiC) Devices Market Outlook, By SiC Diodes / Schottky Barrier Diodes (2024-2032) ($MN)
  • Table 7 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Product Types (2024-2032) ($MN)
  • Table 8 Global Silicon Carbide (SiC) Devices Market Outlook, By Voltage Rating (2024-2032) ($MN)
  • Table 9 Global Silicon Carbide (SiC) Devices Market Outlook, By Up to 650V (2024-2032) ($MN)
  • Table 10 Global Silicon Carbide (SiC) Devices Market Outlook, By 650V-1200V (2024-2032) ($MN)
  • Table 11 Global Silicon Carbide (SiC) Devices Market Outlook, By 1200V-1700V (2024-2032) ($MN)
  • Table 12 Global Silicon Carbide (SiC) Devices Market Outlook, By Above 1700V (2024-2032) ($MN)
  • Table 13 Global Silicon Carbide (SiC) Devices Market Outlook, By Material (2024-2032) ($MN)
  • Table 14 Global Silicon Carbide (SiC) Devices Market Outlook, By Black Silicon Carbide (2024-2032) ($MN)
  • Table 15 Global Silicon Carbide (SiC) Devices Market Outlook, By Green Silicon Carbide (2024-2032) ($MN)
  • Table 16 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Materials (2024-2032) ($MN)
  • Table 17 Global Silicon Carbide (SiC) Devices Market Outlook, By Production Method (2024-2032) ($MN)
  • Table 18 Global Silicon Carbide (SiC) Devices Market Outlook, By Acheson Process (2024-2032) ($MN)
  • Table 19 Global Silicon Carbide (SiC) Devices Market Outlook, By Physical Vapor Transport (PVT) (2024-2032) ($MN)
  • Table 20 Global Silicon Carbide (SiC) Devices Market Outlook, By Chemical Vapor Deposition (CVD) (2024-2032) ($MN)
  • Table 21 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Production Methods (2024-2032) ($MN)
  • Table 22 Global Silicon Carbide (SiC) Devices Market Outlook, By Power Range (2024-2032) ($MN)
  • Table 23 Global Silicon Carbide (SiC) Devices Market Outlook, By Low Power (<1 kW) (2024-2032) ($MN)
  • Table 24 Global Silicon Carbide (SiC) Devices Market Outlook, By Medium Power (1 kW-50 kW) (2024-2032) ($MN)
  • Table 25 Global Silicon Carbide (SiC) Devices Market Outlook, By High Power (>50 kW) (2024-2032) ($MN)
  • Table 26 Global Silicon Carbide (SiC) Devices Market Outlook, By Application (2024-2032) ($MN)
  • Table 27 Global Silicon Carbide (SiC) Devices Market Outlook, By Automotive (2024-2032) ($MN)
  • Table 28 Global Silicon Carbide (SiC) Devices Market Outlook, By Electric Vehicles (EVs) (2024-2032) ($MN)
  • Table 29 Global Silicon Carbide (SiC) Devices Market Outlook, By Internal Combustion Engine Vehicles (ICE) (2024-2032) ($MN)
  • Table 30 Global Silicon Carbide (SiC) Devices Market Outlook, By Hybrid Vehicles (2024-2032) ($MN)
  • Table 31 Global Silicon Carbide (SiC) Devices Market Outlook, By Industrial (2024-2032) ($MN)
  • Table 32 Global Silicon Carbide (SiC) Devices Market Outlook, By Energy & Utilities (2024-2032) ($MN)
  • Table 33 Global Silicon Carbide (SiC) Devices Market Outlook, By Renewable Energy (2024-2032) ($MN)
  • Table 34 Global Silicon Carbide (SiC) Devices Market Outlook, By Power Distribution & Transmission (2024-2032) ($MN)
  • Table 35 Global Silicon Carbide (SiC) Devices Market Outlook, By EV Charging Infrastructure (2024-2032) ($MN)
  • Table 36 Global Silicon Carbide (SiC) Devices Market Outlook, By Aerospace & Defense (2024-2032) ($MN)
  • Table 37 Global Silicon Carbide (SiC) Devices Market Outlook, By Consumer Electronics (2024-2032) ($MN)
  • Table 38 Global Silicon Carbide (SiC) Devices Market Outlook, By Other Applications (2024-2032) ($MN)

Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.