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市场调查报告书
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1896271
碳化硅 (SiC) 装置市场预测至 2032 年:按装置类型、製造流程、封装类型、供应链层级、最终用户和地区分類的全球分析Silicon Carbide Devices Market Forecasts to 2032 - Global Analysis By Device Type, Manufacturing Process, Packaging Type, Supply Chain Tier, End User, and By Geography |
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根据 Stratistics MRC 的一项研究,预计 2025 年全球碳化硅 (SiC) 装置市场价值将达到 41 亿美元,到 2032 年将达到 213 亿美元,预测期内复合年增长率为 26.5%。
碳化硅 (SiC) 装置是先进的半导体元件,具有卓越的导热性、耐久性和高压性能。这些元件包括 MOSFET、二极体和功率模组,与传统的硅元件相比,效率显着提高。其独特的材料特性使其能够实现紧凑、轻巧和节能的设计,使其成为高要求应用的理想选择。 SiC 装置广泛应用于电动车、可再生能源系统和工业电力电子领域,能够实现更快的开关速度、更低的能量损耗和更高的可靠性,从而推动下一代电气化和永续技术解决方案的发展。
电动车日益普及正在推动需求成长。
电动车的日益普及是碳化硅 (SiC) 装置市场的主要驱动力。与硅基元件相比,SiC 半导体具有更高的效率、更快的开关速度和更优异的热性能。 SiC 功率模组正越来越多地应用于电动车逆变器、车载充电器和 DC-DC 转换器中,以延长续航里程并降低能源损耗。在政府补贴、排放气体法规和 OEM 电气化策略的推动下,电动车产量的成长直接加速了对 SiC MOSFET 和二极体的需求。
高昂的製造成本和材料成本
高昂的製造成本和原材料成本是碳化硅 (SiC) 装置市场的主要阻碍因素。 SiC 晶圆製造流程复杂、资本密集,且产量比率低于传统的硅加工製程。由于高品质 SiC基板供应有限、外延生长技术要求高以及製造设备昂贵,装置价格居高不下。儘管基于 SiC 的功率电子装置具有长期的效率和性能优势,但这些成本障碍可能会阻碍其在对成本敏感的应用领域以及新兴电动车製造商中的普及。
扩大可再生能源併网
可再生能源的日益普及为碳化硅 (SiC) 装置市场带来了巨大的发展机会,尤其是在太阳能逆变器、风力发电系统和储能基础设施领域。 SiC 装置能够承受更高的工作电压、高温环境,并具有优异的功率密度,使其成为下一代可再生能源转换设备的理想之选。在全球脱碳目标和电网现代化倡议的推动下,市场对高效电源管理解决方案的需求不断增长,这为 SiC 装置在公用事业规模和分散式能源系统中的长期发展创造了巨大潜力。
地缘政治和贸易限制因素
鑑于碳化硅(SiC)原料供应和製造能力的区域集中性,地缘政治紧张局势和贸易限制对碳化硅元件市场构成重大威胁。出口管制、关税和跨境监管限制可能扰乱碳化硅晶圆的供应和装置分销。受半导体技术领域策略竞争的影响,这些限制可能导致成本增加和前置作业时间。长期的地缘政治不确定性可能阻碍产能扩张计划,并影响碳化硅元件在全球汽车和能源产业的应用。
新冠疫情初期,碳化硅(SiC)装置市场受到衝击,供应链中断、晶圆厂运作放缓以及汽车生产延误导致市场需求下降。电动车(EV)製造和可再生能源计划的推迟也降低了短期需求。然而,随着各国政府优先发展清洁旅游和能源倡议,市场復苏加速。疫情后,对电动车基础设施、电力电子和电网韧性的投资提振了需求,推动碳化硅(SiC)装置在復苏期后持续成长。
预计在预测期内,SiC MOSFET细分市场将占据最大的市场份额。
由于碳化硅 (SiC) MOSFET 相较于传统的硅基元件具有更高的效率、更高的电压承受能力和更优异的热性能,预计在预测期内,SiC MOSFET 将成为市占率最大的装置。在电动车、快速充电基础设施和可再生能源系统等快速应用领域的推动下,SiC MOSFET 可提供更高的开关频率和更低的能量损耗。此外,成本的持续降低和产能的不断提升也促进了其在工业和电力电子应用领域的大规模应用。
预计在预测期内,块状碳化硅(SiC)成长领域将呈现最高的复合年增长率。
预计在预测期内,体硅碳化硅(SiC)生长领域将实现最高成长率,这主要得益于对高品质基板和晶圆日益增长的需求。随着SiC基功率元件产量的不断提高,该领域受益于晶体生长技术的持续进步和良率的产量比率。此外,半导体价值链上製造能力的扩张和策略合作的建立也加速了该技术的应用,使体硅碳化硅生长成为一个高成长领域。
由于亚太地区拥有强大的製造业基础和高度集中的半导体代工厂,预计该地区将在预测期内占据最大的市场份额。在中国、日本和韩国等国家电动车产量快速成长、可再生能源普及以及家用电子电器製造业蓬勃发展的推动下,该地区受益于稳健的供应链和有利于先进电力电子技术应用的政府政策。
由于对电动车、电网现代化和国防电子领域的投资不断增加,预计北美地区在预测期内将实现最高的复合年增长率。在强劲的研发活动、技术创新以及政府对国内半导体製造业的支持下,该地区正经历碳化硅元件的快速商业化。因此,北美正在崛起为碳化硅技术的高成长市场。
According to Stratistics MRC, the Global Silicon Carbide Devices Market is accounted for $4.1 billion in 2025 and is expected to reach $21.3 billion by 2032 growing at a CAGR of 26.5% during the forecast period. Silicon carbide (SiC) devices are advanced semiconductor components engineered for superior thermal conductivity, durability, and high voltage performance. Encompassing MOSFETs, diodes, and power modules, they deliver significant efficiency gains compared to conventional silicon devices. Their unique material properties allow compact, lightweight, and energy efficient designs, making them ideal for demanding applications. Widely adopted in electric vehicles, renewable energy systems, and industrial power electronics, SiC devices enable faster switching, reduced energy losses, and enhanced reliability, driving next generation electrification and sustainable technology solutions.
Rising EV adoption boosts demand
Rising adoption of electric vehicles is a major driver of the Silicon Carbide (SiC) Devices market, as SiC semiconductors enable higher efficiency, faster switching, and improved thermal performance compared to silicon-based devices. SiC power modules are increasingly used in EV inverters, onboard chargers, and DC-DC converters to extend driving range and reduce energy losses. Fueled by government incentives, emission regulations, and OEM electrification strategies, EV production growth is directly accelerating demand for SiC MOSFETs and diodes.
High manufacturing and material costs
High manufacturing and raw material costs act as a key restraint in the Silicon Carbide Devices market. SiC wafer production is complex, capital-intensive, and characterized by lower yields compared to conventional silicon processing. Spurred by limited availability of high-quality SiC substrates, advanced epitaxy requirements, and costly fabrication equipment, device pricing remains elevated. These cost barriers can slow adoption among cost-sensitive applications and emerging EV manufacturers, despite the long-term efficiency and performance advantages offered by SiC-based power electronics.
Expansion in renewable energy integration
Expansion in renewable energy integration presents a strong opportunity for the Silicon Carbide Devices market, particularly in solar inverters, wind power systems, and energy storage infrastructure. SiC devices support higher operating voltages, elevated temperatures, and superior power density, making them ideal for next-generation renewable energy converters. Driven by global decarbonization targets and grid modernization initiatives, demand for efficient power management solutions is rising. This creates long-term growth potential for SiC devices across utility-scale and distributed energy systems.
Geopolitical and trade restrictions
Geopolitical tensions and trade restrictions pose a notable threat to the Silicon Carbide Devices market, given the concentration of raw material sourcing and manufacturing capabilities in specific regions. Export controls, tariffs, and cross-border regulatory constraints can disrupt SiC wafer supply and device distribution. Influenced by strategic competition in semiconductor technologies, such restrictions may increase costs and lead times. Prolonged geopolitical uncertainty could hinder capacity expansion plans and affect global adoption of SiC devices across automotive and energy sectors.
The COVID-19 pandemic initially disrupted the Silicon Carbide Devices market through supply chain interruptions, fab slowdowns, and delays in automotive production. Short-term demand declined as EV manufacturing and renewable energy projects were postponed. However, recovery accelerated as governments prioritized clean mobility and energy transition initiatives. Post-pandemic investments in EV infrastructure, power electronics, and grid resilience strengthened demand, positioning SiC devices for sustained growth beyond the recovery phase.
The SiC MOSFETs segment is expected to be the largest during the forecast period
The SiC MOSFETs segment is expected to account for the largest market share during the forecast period, driven by its superior efficiency, high-voltage capability, and thermal performance compared to conventional silicon-based devices. Fueled by accelerating adoption in electric vehicles, fast-charging infrastructure, and renewable energy systems, SiC MOSFETs enable higher switching frequencies and reduced energy losses. Additionally, ongoing cost reductions and increased production capacity are reinforcing their large-scale deployment across industrial and power electronics applications.
The bulk SiC growth segment is expected to have the highest CAGR during the forecast period
Over the forecast period, the bulk SiC growth segment is predicted to witness the highest growth rate, supported by increasing demand for high-quality substrates and wafers. Propelled by rising production of SiC-based power devices, this segment benefits from continuous advancements in crystal growth techniques and yield improvement. Furthermore, expanding fabrication capacity and strategic partnerships across the semiconductor value chain are accelerating adoption, positioning bulk SiC growth as a high-growth segment.
During the forecast period, the Asia Pacific region is expected to hold the largest market share, attributed to the strong manufacturing base and high concentration of semiconductor foundries. Driven by rapid EV production growth, renewable energy deployment, and consumer electronics manufacturing in countries such as China, Japan, and South Korea, the region benefits from robust supply chains and favorable government policies supporting advanced power electronics adoption.
Over the forecast period, the North America region is anticipated to exhibit the highest CAGR associated with increasing investments in electric mobility, grid modernization, and defense electronics. Fueled by strong R&D activities, technological innovation, and government support for domestic semiconductor manufacturing, the region is witnessing rapid commercialization of SiC devices. Consequently, North America is emerging as a high-growth market for silicon carbide technologies.
Key players in the market
Some of the key players in Silicon Carbide Devices Market include Wolfspeed, STMicroelectronics, Fuji Electric, ROHM Co., Ltd., Infineon Technologies, onsemi, Toshiba, Microchip Technology, Renesas Electronics, General Electric, GeneSiC, Alpha & Omega Semiconductor, Microsemi, Qorvo, Power Integrations, and Littelfuse.
In September 2025, Wolfspeed announced the commercial launch of its 200mm Silicon Carbide materials portfolio, enabling large-scale manufacturing of SiC devices. This milestone strengthens Wolfspeed's leadership in SiC substrates and supports next-generation EV and industrial power applications.
In April 2025, STMicroelectronics unveiled its new generation of SiC power technology tailored for next-generation EV traction inverters. The rollout across 750V and 1200V classes will expand SiC adoption from premium EVs to mid-size and compact models.
In April 2025, ROHM developed new high-power density SiC molded modules (4-in-1 and 6-in-1) optimized for onboard chargers (OBCs) in EVs. These modules improve heat dissipation and efficiency in compact designs.
Note: Tables for North America, Europe, APAC, South America, and Middle East & Africa Regions are also represented in the same manner as above.