伺服器DRAM需求激增，推动主要供应商提高产量

根据TrendForce研究显示，人工智慧需求的激增导致DRAM供应趋紧。三星、SK海力士和美光计画在2026年之前扩大DRAM产能。

主要亮点

• 人工智慧驱动的需求：由于人工智慧应用的兴起，包括DDR5和HBM在内的伺服器DRAM需求正在飙升。
• 产能短缺：不断增长的需求使DRAM晶圆产能捉襟见肘，製造商正在将NAND快闪生产设施改造为DRAM生产线。
• 三星扩张计画：三星正在减少NAND快闪记忆体产量，并扩大DRAM产量。它正在逐步提高其P4L晶圆厂的产能。
• SK海力士的策略调整：SK海力士计划将其清州工厂的部分空间改造为HBM生产线，并新建一座M15X工厂以扩大DRAM产能。
• 美光的战略与挑战：面对无尘室空间的限制，美光计画扩大其在美国的产能，并提高其台湾台中工厂的DRAM产量。
• 市场预测：儘管DRAM产量预计将会增加，但不断增长的需求将打破供需平衡，导致2026年DRAM供应短缺。

本报告分析了全球DRAM供需趋势，总结了需求成长背后的因素、主要供应商的应对措施以及未来供需平衡的前景。

目录

第一章：三大DRAM供应商正在加速製程升级以提高产量，但预计CSP采购需求的急剧成长将导致2026年DRAM供应短缺。

第二章：三星将专注于平泽的DRAM，调整产能分配，并同时建造新工厂和改造生产线。

• 三星：开始生产DRAM和NAND快闪晶圆

第三章：HBM需求推动产能扩张，M15X成为新晶圆生产的主要重点。

• SK海力士：开始生产DRAM和NAND快闪晶圆

第四章：由于无尘室空间有限，美光正在等待为其在美国新建的晶圆厂提供资金以推动扩张。

• 美光：DRAM晶圆生产启动
• 三大厂商的新晶圆产能计划
• HBM和DDR5晶圆的平均价格
• DRAM位供应、位需求及供需平衡

TrendForce shows AI-driven DRAM demand surge, creating supply tension. Samsung, SK hynix, and Micron plan to expand DRAM production through 2026.

Key Highlights

• AI-Driven Demand Growth: Increasing AI applications have spurred Server's demand for DRAM, including DDR5 and HBM.
• Capacity Shortfall: High demand has led to tight DRAM wafer production capacity, with manufacturers transitioning NAND Flash facilities to DRAM.
• Samsung's Expansion Plan: Samsung is reducing NAND Flash production to expand DRAM outputs, gradually enhancing P4L fabs' capacity.
• SK hynix Strategy Adjustment: SK hynix is converting Cheongju fab space to HBM capacity and building a new M15X fab to boost DRAM production.
• Micron's Strategy and Challenges: Facing limited cleanroom space, Micron plans to expand capacity in the US and increase DRAM output from Taiwan's Taichung fab.
• Market Forecast: Though DRAM output is set to rise, demand growth ensures a supply-demand imbalance, with DRAM supply expected to fall short in 2026.

Table of Contents

1. Three Major DRAM Suppliers Are Accelerating Process Upgrades to Increase Output, but DRAM Supply Shortage Will Persist in 2026 Due to Soaring Growth of CSPs' Procurement Demand

2. Samsung Adjusts Production Capacity Distribution with a Focus on DRAM in Pyeongtaek, Engaging New Fab Construction and Production Line Conversion Simultaneously

• Samsung's DRAM and NAND Flash Wafer Starts

3. M15X to Become Main Driver for New Wafer Starts as Demand for HBM Triggers Capacity Expansions

• SK hynix's DRAM and NAND Flash Wafer Starts

4. Micron Awaits Contributions from New US Fab for Momentum of Expansions Due to Restricted Space of Clean Rooms

• Micron's DRAM Wafer Starts
• Capacity Plans for New Fabs among the Three Major Suppliers
• Per-Wafer ASPs of HBM and DDR5
• Supply and Demand Bits and S/D of DRAM