射频氮化镓半导体市场－全球产业规模、份额、趋势、机会和预测，按材料、应用、最终用户、地区和竞争格局划分，2020-2030年预测

2024年全球射频氮化镓（GaN）半导体装置市场规模为24.2亿美元，预计到2030年将以20.83%的复合年增长率成长至75.3亿美元。射频氮化镓半导体装置利用氮化镓的宽频隙特性，在高频和高功率射频应用中展现出卓越的性能，其特点是高击穿电压、更高的功率密度和高效的运作。市场成长的根本动力在于全球5G通讯基础设施的广泛部署，这需要先进的射频组件来管理更高的频率和功率位准。

主要市场驱动因素

主要市场挑战

主要市场趋势

目录

第一章：产品概述

第二章：研究方法

第三章：执行概要

第四章：顾客之声

第五章：全球射频氮化镓半导体装置市场展望

• 市场规模及预测
  • 按价值
• 市占率及预测
  • 依材料分类（碳化硅上氮化镓、硅上氮化镓、钻石上氮化镓）
  • 依最终用户（航太与国防、IT与电信、消费性电子、汽车、其他）划分
  • 按应用领域（无线基础设施、储能、卫星通讯、光伏逆变器、其他）
  • 按地区
  • 按公司（2024 年）
• 市场地图

第六章：北美射频氮化镓半导体装置市场展望

• 市场规模及预测
• 市占率及预测
• 北美洲：国家分析
  • 美国
  • 加拿大
  • 墨西哥

第七章：欧洲射频氮化镓半导体装置市场展望

• 市场规模及预测
• 市占率及预测
• 欧洲：国家分析
  • 德国
  • 法国
  • 英国
  • 义大利
  • 西班牙

第八章：亚太地区射频氮化镓半导体装置市场展望

• 市场规模及预测
• 市占率及预测
• 亚太地区：国家分析
  • 中国
  • 印度
  • 日本
  • 韩国
  • 澳洲

第九章：中东和非洲射频氮化镓半导体装置市场展望

• 市场规模及预测
• 市占率及预测
• 中东和非洲：国家分析
  • 沙乌地阿拉伯
  • 阿联酋
  • 南非

第十章：南美洲射频氮化镓半导体装置市场展望

• 市场规模及预测
• 市占率及预测
• 南美洲：国家分析
  • 巴西
  • 哥伦比亚
  • 阿根廷

第十一章：市场动态

• 司机
• 挑战

第十二章：市场趋势与发展

• 併购（如有）
• 产品发布（如有）
• 最新进展

第十三章：全球射频氮化镓半导体装置市场：SWOT分析

第十四章：波特五力分析

• 产业竞争
• 新进入者的潜力
• 供应商议价能力
• 顾客的力量
• 替代产品的威胁

第十五章：竞争格局

• Taiwan Semiconductor Manufacturing Company Limited
• Samsung Electronics Co., Ltd.
• Intel Corporation
• GlobalFoundries Inc.
• United Microelectronics Corporation
• Micron Technology, Inc.
• Semiconductor Manufacturing International Corporation
• STMicroelectronics International NV
• NXP Semiconductors NV
• Analog devises Inc.

第十六章：策略建议

第17章调查会社について・免责事项

The Global RF GaN Semiconductor Device Market, valued at USD 2.42 Billion in 2024, is projected to experience a CAGR of 20.83% to reach USD 7.53 Billion by 2030. RF Gallium Nitride (GaN) semiconductor devices are components leveraging the wide-bandgap properties of Gallium Nitride to deliver superior performance in high-frequency and high-power radio frequency applications, characterized by high breakdown voltage, enhanced power density, and efficient operation. The market's growth is fundamentally supported by the extensive global deployment of 5G telecommunications infrastructure, requiring advanced RF components for base stations to manage higher frequencies and power levels.

Key Market Drivers

The accelerated global deployment of 5G networks is a significant driver for RF GaN semiconductor devices. Gallium nitride's high power density and efficiency at high frequencies make it an optimal material for the power amplifiers and front-end modules essential to 5G base stations and active antenna systems. This technology enables telecommunication infrastructure to support increased bandwidth and lower latency, facilitating denser network coverage and faster data transmission

Key Market Challenges

The inherent manufacturing complexity and elevated production costs present a significant challenge to the sustained growth of the Global RF GaN Semiconductor Device Market. Producing GaN devices requires highly specialized fabrication processes, including stringent environmental controls and costly, dedicated equipment. This substantially increases per-unit expenses and often results in lower manufacturing yields when compared to more mature silicon technologies. These factors directly impede market expansion by making RF GaN components less competitive in price-sensitive applications and limiting broader adoption, despite their superior performance attributes.

Key Market Trends

Miniaturization and monolithic integration of devices represent a key advancement, driving the development of smaller, more powerful, and thermally efficient RF systems. This trend allows for greater functionality in reduced footprints, essential for integrating advanced RF capabilities into a wider array of platforms. As companies invest heavily in such technological progress, according to the Semiconductor Industry Association, U. S. semiconductor industry investment in research and development totaled $59.3 billion in 2023, representing a 0.9% increase over 2022. This sustained investment supports the intricate fabrication processes required for highly integrated GaN solutions.

Key Market Players

• Taiwan Semiconductor Manufacturing Company Limited
• Samsung Electronics Co., Ltd.
• Intel Corporation
• GlobalFoundries Inc.
• United Microelectronics Corporation
• Micron Technology, Inc.
• Semiconductor Manufacturing International Corporation
• STMicroelectronics International N.V.
• NXP Semiconductors N.V.
• Analog devises Inc.

Report Scope:

In this report, the Global RF GaN Semiconductor Device Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

RF GaN Semiconductor Device Market, By Material:

• GaN-On-SiC
• GaN-On-Silicon
• GaN-On-Diamond

RF GaN Semiconductor Device Market, By End-Users:

• Aerospace & Defense
• IT & Telecom
• Consumer Electronics
• Automotive
• Others

RF GaN Semiconductor Device Market, By Application:

• Wireless Infrastructure
• Power Storage
• Satellite Communication
• PV Inverter
• Others

RF GaN Semiconductor Device Market, By Region:

• North America
  • United States
  • Canada
  • Mexico
• Europe
  • France
  • United Kingdom
  • Italy
  • Germany
  • Spain
• Asia Pacific
  • China
  • India
  • Japan
  • Australia
  • South Korea
• South America
  • Brazil
  • Argentina
  • Colombia
• Middle East & Africa
  • South Africa
  • Saudi Arabia
  • UAE

Competitive Landscape

Company Profiles: Detailed analysis of the major companies presents in the Global RF GaN Semiconductor Device Market.

Available Customizations:

Global RF GaN Semiconductor Device Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

Company Information

• Detailed analysis and profiling of additional market players (up to five).

Table of Contents

1. Product Overview

• 1.1. Market Definition
• 1.2. Scope of the Market
  • 1.2.1. Markets Covered
  • 1.2.2. Years Considered for Study
  • 1.2.3. Key Market Segmentations

2. Research Methodology

• 2.1. Objective of the Study
• 2.2. Baseline Methodology
• 2.3. Key Industry Partners
• 2.4. Major Association and Secondary Sources
• 2.5. Forecasting Methodology
• 2.6. Data Triangulation & Validation
• 2.7. Assumptions and Limitations

3. Executive Summary

• 3.1. Overview of the Market
• 3.2. Overview of Key Market Segmentations
• 3.3. Overview of Key Market Players
• 3.4. Overview of Key Regions/Countries
• 3.5. Overview of Market Drivers, Challenges, Trends

4. Voice of Customer

5. Global RF GaN Semiconductor Device Market Outlook

• 5.1. Market Size & Forecast
  • 5.1.1. By Value
• 5.2. Market Share & Forecast
  • 5.2.1. By Material (GaN-On-SiC, GaN-On-Silicon, GaN-On-Diamond)
  • 5.2.2. By End-Users (Aerospace & Defense, IT & Telecom, Consumer Electronics, Automotive, Others)
  • 5.2.3. By Application (Wireless Infrastructure, Power Storage, Satellite Communication, PV Inverter, Others)
  • 5.2.4. By Region
  • 5.2.5. By Company (2024)
• 5.3. Market Map

6. North America RF GaN Semiconductor Device Market Outlook

• 6.1. Market Size & Forecast
  • 6.1.1. By Value
• 6.2. Market Share & Forecast
  • 6.2.1. By Material
  • 6.2.2. By End-Users
  • 6.2.3. By Application
  • 6.2.4. By Country
• 6.3. North America: Country Analysis
  • 6.3.1. United States RF GaN Semiconductor Device Market Outlook
    • 6.3.1.1. Market Size & Forecast
      • 6.3.1.1.1. By Value
    • 6.3.1.2. Market Share & Forecast
      • 6.3.1.2.1. By Material
      • 6.3.1.2.2. By End-Users
      • 6.3.1.2.3. By Application
  • 6.3.2. Canada RF GaN Semiconductor Device Market Outlook
    • 6.3.2.1. Market Size & Forecast
      • 6.3.2.1.1. By Value
    • 6.3.2.2. Market Share & Forecast
      • 6.3.2.2.1. By Material
      • 6.3.2.2.2. By End-Users
      • 6.3.2.2.3. By Application
  • 6.3.3. Mexico RF GaN Semiconductor Device Market Outlook
    • 6.3.3.1. Market Size & Forecast
      • 6.3.3.1.1. By Value
    • 6.3.3.2. Market Share & Forecast
      • 6.3.3.2.1. By Material
      • 6.3.3.2.2. By End-Users
      • 6.3.3.2.3. By Application

7. Europe RF GaN Semiconductor Device Market Outlook

• 7.1. Market Size & Forecast
  • 7.1.1. By Value
• 7.2. Market Share & Forecast
  • 7.2.1. By Material
  • 7.2.2. By End-Users
  • 7.2.3. By Application
  • 7.2.4. By Country
• 7.3. Europe: Country Analysis
  • 7.3.1. Germany RF GaN Semiconductor Device Market Outlook
    • 7.3.1.1. Market Size & Forecast
      • 7.3.1.1.1. By Value
    • 7.3.1.2. Market Share & Forecast
      • 7.3.1.2.1. By Material
      • 7.3.1.2.2. By End-Users
      • 7.3.1.2.3. By Application
  • 7.3.2. France RF GaN Semiconductor Device Market Outlook
    • 7.3.2.1. Market Size & Forecast
      • 7.3.2.1.1. By Value
    • 7.3.2.2. Market Share & Forecast
      • 7.3.2.2.1. By Material
      • 7.3.2.2.2. By End-Users
      • 7.3.2.2.3. By Application
  • 7.3.3. United Kingdom RF GaN Semiconductor Device Market Outlook
    • 7.3.3.1. Market Size & Forecast
      • 7.3.3.1.1. By Value
    • 7.3.3.2. Market Share & Forecast
      • 7.3.3.2.1. By Material
      • 7.3.3.2.2. By End-Users
      • 7.3.3.2.3. By Application
  • 7.3.4. Italy RF GaN Semiconductor Device Market Outlook
    • 7.3.4.1. Market Size & Forecast
      • 7.3.4.1.1. By Value
    • 7.3.4.2. Market Share & Forecast
      • 7.3.4.2.1. By Material
      • 7.3.4.2.2. By End-Users
      • 7.3.4.2.3. By Application
  • 7.3.5. Spain RF GaN Semiconductor Device Market Outlook
    • 7.3.5.1. Market Size & Forecast
      • 7.3.5.1.1. By Value
    • 7.3.5.2. Market Share & Forecast
      • 7.3.5.2.1. By Material
      • 7.3.5.2.2. By End-Users
      • 7.3.5.2.3. By Application

8. Asia Pacific RF GaN Semiconductor Device Market Outlook

• 8.1. Market Size & Forecast
  • 8.1.1. By Value
• 8.2. Market Share & Forecast
  • 8.2.1. By Material
  • 8.2.2. By End-Users
  • 8.2.3. By Application
  • 8.2.4. By Country
• 8.3. Asia Pacific: Country Analysis
  • 8.3.1. China RF GaN Semiconductor Device Market Outlook
    • 8.3.1.1. Market Size & Forecast
      • 8.3.1.1.1. By Value
    • 8.3.1.2. Market Share & Forecast
      • 8.3.1.2.1. By Material
      • 8.3.1.2.2. By End-Users
      • 8.3.1.2.3. By Application
  • 8.3.2. India RF GaN Semiconductor Device Market Outlook
    • 8.3.2.1. Market Size & Forecast
      • 8.3.2.1.1. By Value
    • 8.3.2.2. Market Share & Forecast
      • 8.3.2.2.1. By Material
      • 8.3.2.2.2. By End-Users
      • 8.3.2.2.3. By Application
  • 8.3.3. Japan RF GaN Semiconductor Device Market Outlook
    • 8.3.3.1. Market Size & Forecast
      • 8.3.3.1.1. By Value
    • 8.3.3.2. Market Share & Forecast
      • 8.3.3.2.1. By Material
      • 8.3.3.2.2. By End-Users
      • 8.3.3.2.3. By Application
  • 8.3.4. South Korea RF GaN Semiconductor Device Market Outlook
    • 8.3.4.1. Market Size & Forecast
      • 8.3.4.1.1. By Value
    • 8.3.4.2. Market Share & Forecast
      • 8.3.4.2.1. By Material
      • 8.3.4.2.2. By End-Users
      • 8.3.4.2.3. By Application
  • 8.3.5. Australia RF GaN Semiconductor Device Market Outlook
    • 8.3.5.1. Market Size & Forecast
      • 8.3.5.1.1. By Value
    • 8.3.5.2. Market Share & Forecast
      • 8.3.5.2.1. By Material
      • 8.3.5.2.2. By End-Users
      • 8.3.5.2.3. By Application

9. Middle East & Africa RF GaN Semiconductor Device Market Outlook

• 9.1. Market Size & Forecast
  • 9.1.1. By Value
• 9.2. Market Share & Forecast
  • 9.2.1. By Material
  • 9.2.2. By End-Users
  • 9.2.3. By Application
  • 9.2.4. By Country
• 9.3. Middle East & Africa: Country Analysis
  • 9.3.1. Saudi Arabia RF GaN Semiconductor Device Market Outlook
    • 9.3.1.1. Market Size & Forecast
      • 9.3.1.1.1. By Value
    • 9.3.1.2. Market Share & Forecast
      • 9.3.1.2.1. By Material
      • 9.3.1.2.2. By End-Users
      • 9.3.1.2.3. By Application
  • 9.3.2. UAE RF GaN Semiconductor Device Market Outlook
    • 9.3.2.1. Market Size & Forecast
      • 9.3.2.1.1. By Value
    • 9.3.2.2. Market Share & Forecast
      • 9.3.2.2.1. By Material
      • 9.3.2.2.2. By End-Users
      • 9.3.2.2.3. By Application
  • 9.3.3. South Africa RF GaN Semiconductor Device Market Outlook
    • 9.3.3.1. Market Size & Forecast
      • 9.3.3.1.1. By Value
    • 9.3.3.2. Market Share & Forecast
      • 9.3.3.2.1. By Material
      • 9.3.3.2.2. By End-Users
      • 9.3.3.2.3. By Application

10. South America RF GaN Semiconductor Device Market Outlook

• 10.1. Market Size & Forecast
  • 10.1.1. By Value
• 10.2. Market Share & Forecast
  • 10.2.1. By Material
  • 10.2.2. By End-Users
  • 10.2.3. By Application
  • 10.2.4. By Country
• 10.3. South America: Country Analysis
  • 10.3.1. Brazil RF GaN Semiconductor Device Market Outlook
    • 10.3.1.1. Market Size & Forecast
      • 10.3.1.1.1. By Value
    • 10.3.1.2. Market Share & Forecast
      • 10.3.1.2.1. By Material
      • 10.3.1.2.2. By End-Users
      • 10.3.1.2.3. By Application
  • 10.3.2. Colombia RF GaN Semiconductor Device Market Outlook
    • 10.3.2.1. Market Size & Forecast
      • 10.3.2.1.1. By Value
    • 10.3.2.2. Market Share & Forecast
      • 10.3.2.2.1. By Material
      • 10.3.2.2.2. By End-Users
      • 10.3.2.2.3. By Application
  • 10.3.3. Argentina RF GaN Semiconductor Device Market Outlook
    • 10.3.3.1. Market Size & Forecast
      • 10.3.3.1.1. By Value
    • 10.3.3.2. Market Share & Forecast
      • 10.3.3.2.1. By Material
      • 10.3.3.2.2. By End-Users
      • 10.3.3.2.3. By Application

11. Market Dynamics

• 11.1. Drivers
• 11.2. Challenges

12. Market Trends & Developments

• 12.1. Merger & Acquisition (If Any)
• 12.2. Product Launches (If Any)
• 12.3. Recent Developments

13. Global RF GaN Semiconductor Device Market: SWOT Analysis

14. Porter's Five Forces Analysis

• 14.1. Competition in the Industry
• 14.2. Potential of New Entrants
• 14.3. Power of Suppliers
• 14.4. Power of Customers
• 14.5. Threat of Substitute Products

15. Competitive Landscape

• 15.1. Taiwan Semiconductor Manufacturing Company Limited
  • 15.1.1. Business Overview
  • 15.1.2. Products & Services
  • 15.1.3. Recent Developments
  • 15.1.4. Key Personnel
  • 15.1.5. SWOT Analysis
• 15.2. Samsung Electronics Co., Ltd.
• 15.3. Intel Corporation
• 15.4. GlobalFoundries Inc.
• 15.5. United Microelectronics Corporation
• 15.6. Micron Technology, Inc.
• 15.7. Semiconductor Manufacturing International Corporation
• 15.8. STMicroelectronics International N.V.
• 15.9. NXP Semiconductors N.V.
• 15.10. Analog devises Inc.

16. Strategic Recommendations

17. About Us & Disclaimer