市场调查报告书
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全球 IGBT 和晶闸管市场研究报告 - 2024 年至 2032 年行业分析、规模、份额、成长、趋势和预测Global IGBTs and Thyristors Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032 |
全球 IGBT 和晶闸管市场需求预计将从 2023 年的 60.1 亿美元增至 2032 年近 78.5 亿美元,2024-2032 年研究期间复合年增长率为 3.01%。
IGBT(绝缘栅双极电晶体)和晶闸管是电力电子中使用的半导体装置,用于控制和调节马达驱动、逆变器、转换器、电源和电动车等各种应用中的电力。 IGBT 是能够处理高电流和高电压的高速开关元件,结合了 MOSFET 和双极接面电晶体的优点。晶闸管或硅控整流器 (SCR) 是单向半导体开关,透过在施加特定触发电压时导通来控制电流,并保持导通状态,直到电流降至特定阈值以下。
对节能电源转换和控制解决方案日益增长的需求推动了对 IGBT 和晶闸管作为电力电子、马达驱动、再生能源逆变器、工业自动化和电动车推进系统中关键组件的需求。随着向风能、太阳能和电动车等永续能源的过渡,对能够处理高电压、电流和温度,同时提供高效、可靠性能的功率半导体装置的需求不断增长。此外,电动和混合动力车的日益普及推动了牵引逆变器、车载充电器和电池管理系统中对 IGBT 和晶闸管的需求,从而在汽车应用中实现高效的功率转换和能源管理。此外,半导体技术的进步使得IGBT和闸流管的开发具有更高的功率密度、更快的开关速度和更好的热性能,满足电力电子和电力传输中新兴应用的要求。
此外,对电网现代化、智慧电网和再生能源併网的日益重视推动了电网基础设施、储能係统和电压调节设备的市场成长,支持向更永续和更有弹性的能源未来过渡。随着电力电子系统的复杂性不断增加,以及电动车、再生能源和工业自动化市场的不断扩大,对高性能晶闸管和IGBT 的需求不断增长,这些晶闸管和IGBT 可以提供更高的效率、可靠性和功能,以满足不断变化的需求。然而,供应链中断、贸易紧张和地缘政治不确定性可能会挑战未来几年的市场成长。
研究报告涵盖波特五力模型、市场吸引力分析和价值链分析。这些工具有助于清晰地了解行业结构并评估全球范围内的竞争吸引力。此外,这些工具还对全球 igbts 和晶闸管市场的各个细分市场进行了包容性评估。 IGBT 和晶闸管产业的成长和趋势为本研究提供了整体方法。
igbts 和晶闸管市场报告的这一部分提供了国家和区域级别细分市场的详细资料,从而帮助策略师确定相应产品或服务的目标人口统计数据以及即将到来的机会。
本节涵盖区域前景,重点介绍北美、欧洲、亚太地区、拉丁美洲以及中东和非洲 IGBT 和晶闸管市场当前和未来的需求。此外,该报告重点关注所有主要地区各个应用领域的需求、估计和预测。
该研究报告还涵盖了市场主要参与者的全面概况以及对全球竞争格局的深入了解。 IGBT 和晶闸管市场的主要参与者包括瑞萨电子公司、塞米控丹佛斯、Diodes 公司、Dynex 半导体有限公司、英飞凌科技股份公司、日立能源有限公司、富士电机有限公司。策略发展,例如关键併购、未来产能、合作伙伴关係、财务概况、合作、新产品开发、新产品发布和其他发展。
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The global demand for IGBTs and Thyristors Market is presumed to reach the market size of nearly USD 7.85 Billion by 2032 from USD 6.01 Billion in 2023 with a CAGR of 3.01% under the study period 2024 - 2032.
IGBTs (Insulated Gate Bipolar Transistors) and thyristors are semiconductor devices used in power electronics to control and regulate electrical power in various applications such as motor drives, inverters, converters, power supplies, and electric vehicles. IGBTs are high-speed switching devices capable of handling high currents and voltages, combining the advantages of MOSFETs and bipolar junction transistors. Thyristors, or silicon-controlled rectifiers (SCRs), are unidirectional semiconductor switches that control the current flow by turning on when a specific trigger voltage is applied and remain conducting until the current drops below a certain threshold.
The growing need for energy-efficient power conversion and control solutions drives the demand for IGBTs and thyristors as key components in power electronics, motor drives, renewable energy inverters, industrial automation, and electric vehicle propulsion systems. With the transition towards sustainable energy sources such as wind, solar, and electric vehicles, there is a growing demand for power semiconductor devices capable of handling high voltages, currents, and temperatures while delivering efficient and reliable performance. Additionally, the rising adoption of electric & hybrid electric vehicles drives the demand for IGBTs and thyristors in traction inverters, onboard chargers, and battery management systems, enabling efficient power conversion and energy management in automotive applications. Moreover, advancements in semiconductor technology allow the development of IGBTs and thyristors with higher power density, faster switching speeds, and improved thermal performance, meeting the requirements of emerging applications in power electronics and electric power transmission.
Furthermore, the growing emphasis on grid modernization, smart grids, and renewable energy integration drives the market growth in power grid infrastructure, energy storage systems, and voltage regulation devices, supporting the transition towards a more sustainable and resilient energy future. With the increasing complexity of power electronics systems and the expanding market for electric vehicles, renewable energy, and industrial automation, there is a growing demand for high-performance thyristors and IGBTs that offer enhanced efficiency, reliability, and functionality to meet the evolving needs of customers and industries. However, supply chain disruptions, trade tensions, and geopolitical uncertainties may challenge the market growth in the coming years.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of igbts and thyristors. The growth and trends of igbts and thyristors industry provide a holistic approach to this study.
This section of the igbts and thyristors market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the IGBTs and Thyristors market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the IGBTs and Thyristors market include Renesas Electronics Corporation, Semikron Danfoss, Diodes Incorporated, Dynex Semiconductor Ltd., Infineon Technologies AG, Hitachi Energy Ltd., Fuji Electric Co., Ltd. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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