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全球绝缘栅双极电晶体 (IGBT) 市场研究报告 - 2024 年至 2032 年行业分析、规模、份额、成长、趋势和预测Global Insulated-Gate Bipolar Transistors (IGBTs) Market Research Report - Industry Analysis, Size, Share, Growth, Trends and Forecast 2024 to 2032 |
全球绝缘栅双极电晶体(IGBT)市场需求预计将从2023年的183亿美元达到2032年近454.7亿美元的市场规模,2024-2032年研究期间的复合年增长率为10.64%。
绝缘栅双极电晶体 (IGBT) 是一种结合了 MOSFET 和 BJT 特性的功率开关电晶体。它由由金属氧化物半导体 (MOS) 闸极结构控制的四个交替层 (PNPN) 组成。它用于电源、马达控制电路和电力电子应用,例如逆变器和转换器。与其他电晶体装置相比,使用 IGBT 的主要优点是其高电压能力、低导通电阻、易于驱动以及相对较快的开关速度。它是中速和高压应用的理想选择,例如脉宽调製 (PWM)、变速控制、在数百千赫兹范围内运行的变频器应用以及开关模式电源或太阳能 DC-AC 逆变器。
预计全球绝缘栅双极电晶体(IGBT)市场在预测期内将大幅成长。智慧家庭、智慧城市的兴起、电动车需求的增加以及对高压操作设备的需求预计将增加对绝缘栅双极电晶体(IGBT)的需求。绝缘栅双极电晶体 (IGBT) 因其卓越的特性而成为一种成功的装置。高速开关速率、最佳化的功率损耗、高电压下的易于控制(因为它可以实现更高的频率和更高的效率)已导致 IGBT 在电网基础设施中的部署增加。智慧电网正在取代旧的电网;这将为市场创造机会。然而,高温下的漏电流阻碍了市场的成长。
研究报告涵盖波特五力模型、市场吸引力分析和价值链分析。这些工具有助于清晰地了解行业结构并评估全球范围内的竞争吸引力。此外,这些工具也对全球绝缘栅双极电晶体(IGBT)市场的各个细分市场进行了包容性评估。绝缘栅双极电晶体 (IGBT) 产业的成长和趋势为本研究提供了整体方法。
绝缘栅双极电晶体 (IGBT) 市场报告的这一部分提供了国家和地区级别细分市场的详细资料,从而帮助策略师确定相应产品或服务的目标人群以及即将到来的机会。
本节涵盖区域前景,重点介绍北美、欧洲、亚太地区、拉丁美洲以及中东和非洲绝缘栅双极电晶体 (IGBT) 市场当前和未来的需求。此外,该报告重点关注所有主要地区各个应用领域的需求、估计和预测。
该研究报告还涵盖了市场主要参与者的全面概况以及对全球竞争格局的深入了解。绝缘栅双极电晶体(IGBT)市场的主要参与者包括英飞凌科技公司、三菱电机公司、恩智浦半导体、安森美半导体公司、瑞萨电子公司、德州仪器公司和东芝公司。本节包含竞争格局的整体视图,包括各种策略发展,例如关键併购、未来产能、合作伙伴关係、财务概况、合作、新产品开发、新产品发布和其他发展。
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The global demand for Insulated-Gate Bipolar Transistors (IGBTs) Market is presumed to reach the market size of nearly USD 45.47 Billion by 2032 from USD 18.3 Billion in 2023 with a CAGR of 10.64% under the study period 2024-2032.
An insulated-gate bipolar transistor (IGBT) is a power switching transistor that combines the features of MOSFETs and BJTs. It consists of four alternating layers (P-N-P-N) controlled by a metal-oxide-semiconductor (MOS) gate structure. It is used in power supply, motor control circuits, and power electronics applications, such as inverters and converters. The main benefit of using the IGBT over other transistor devices is its high voltage capability, low ON-resistance, ease of drive, and relatively fast switching speeds. It's a good choice for moderate speed and high voltage applications such as pulse-width modulated (PWM), variable speed control, frequency converter applications operating in the hundreds of kilohertz range, and switch-mode power supplies or solar-powered DC-AC inverter.
The global insulated-gate bipolar transistors (IGBTs) market is forecasted to grow considerably during the forecast period. The rising trend of smart homes, smart cities, increasing demand for electric vehicles, and the need for high voltage operating devices are expected to swell demand for insulated-gate bipolar transistors (IGBTs). Insulated-gate bipolar transistors (IGBTs) have become a successful device due to their superior features. High-speed switching rate and optimized power loss, ease-of-control at high voltage, as it enables higher frequency with enhanced efficiency, has caused increased deployment of IGBTs into grid infrastructure. Smart grids are replacing old grid networks; this will create opportunities for the market. However, current leakage at high temperatures hampers the market growth.
The research report covers Porter's Five Forces Model, Market Attractiveness Analysis, and Value Chain analysis. These tools help to get a clear picture of the industry's structure and evaluate the competition attractiveness at a global level. Additionally, these tools also give an inclusive assessment of each segment in the global market of Insulated-Gate Bipolar Transistors (IGBTs). The growth and trends of Insulated-Gate Bipolar Transistors (IGBTs) industry provide a holistic approach to this study.
This section of the Insulated-Gate Bipolar Transistors (IGBTs) market report provides detailed data on the segments at country and regional level, thereby assisting the strategist in identifying the target demographics for the respective product or services with the upcoming opportunities.
This section covers the regional outlook, which accentuates current and future demand for the Insulated-Gate Bipolar Transistors (IGBTs) market across North America, Europe, Asia-Pacific, Latin America, and Middle East & Africa. Further, the report focuses on demand, estimation, and forecast for individual application segments across all the prominent regions.
The research report also covers the comprehensive profiles of the key players in the market and an in-depth view of the competitive landscape worldwide. The major players in the Insulated-Gate Bipolar Transistors (IGBTs) market include Infineon Technologies AG, Mitsubishi Electric Corporation, NXP Semiconductors, ON Semiconductor Corporation, Renesas Electronics Corporation, Texas Instruments Incorporated, Toshiba Corporation. This section consists of a holistic view of the competitive landscape that includes various strategic developments such as key mergers & acquisitions, future capacities, partnerships, financial overviews, collaborations, new product developments, new product launches, and other developments.
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