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市场调查报告书
商品编码
1457080

晶圆市场 – 2024 年至 2029 年预测

Sic Wafer Market - Forecasts from 2024 to 2029
出版日期: | 出版商: Knowledge Sourcing Intelligence | 英文 140 Pages | 商品交期: 最快1-2个工作天内

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简介目录

晶圆市场预计复合年增长率为 21.60%，从 2022 年的 3.31 亿美元增加到 2029 年的 12.99 亿美元。

该晶圆是碳化硅半导体。碳化硅（SiC）具有较宽的能隙，使其适合高功率应用。 SiC基板经常用作高性能功率 IC 的基础。 SiC 可承受比硅或氮化镓 (GaN) 更高的温度，从而提高电气设备的性能。如今的半导体业务蓬勃发展，晶圆供应是成功的关键。为了满足对 SiC 半导体不断增长的需求，晶片製造商越来越依赖内部和外部来源来生产必要的晶圆。

市场驱动因素

  • 电动汽车应用的扩大正在推动市场成长。

为了满足客户的期望，汽车领域的新型电动车具有充电时间更短、续航里程更长和性能更高的特性。为了提供客户上述优势，汽车企业需要强大的电子元件，即使在高温下也能有效且有效率地工作。由于基于SiC的技术具有高导热性、低开关损耗、更高的功率密度和更高的频宽等优点，因此现在正在使用宽能带隙SiC技术来製造功率模组。 Soitec 于 2022 年 5 月宣布推出首款 200mm 碳化硅智慧晶圆。透过此次公告，Soitec 能够将其 SiC 产品线扩展到 150mm 以上，并推进智慧晶圆的研发，以满足汽车产业不断增长的需求。

Soitec 专有的 SmartSiC 技术可显着改善电力电子设备的运作并提高电动车的能源经济性。此技术在电阻极低的多晶硅片上沉积一层非常薄的优质碳化硅。此外，德国以其技术力实力而闻名，其汽车产业对于世界向电动车的转变至关重要。意识到这是一个机会，美国晶片製造商Wolfspeed 与德国汽车供应商 ZF 合作，将于2023 年2 月在德国萨尔州建设一座200mm 碳化硅(SiC) 晶圆工厂和研发设施。宣布了建设计划。该工厂将专注于整个电力电子领域的下一代碳化硅产品和工艺，包括汽车、工业和可再生能源发电。

  • 预计6吋晶圆尺寸将占有较大份额。

SiC功率半导体在耐热性和耐高压性方面超过了目前业界标准的传统硅基功率半导体。 SiC功率半导体有助于功率模组的小型化和提高能源效率。因此，SiC 功率半导体在许多行业都有很高的需求，特别是用于电动车、铁路车辆和工业机械。大多数功率半导体装置中使用的n型SiC基板的直径为6英吋。儘管各大IDM厂商在8吋晶圆研发方面取得了重大进展，但提高产量比率以及将功率半导体工厂的6吋生产线转为8吋生产线仍需要时间。

因此，6吋SiC基板暂时很可能会继续普及。例如，2022年3月，SDK开始量产直径6吋（150毫米）的碳化硅结晶晶圆（wafer）。选择我们的SiC磊晶片的客户决定开始内部量产6吋晶圆。

据估计，亚太地区的成长率最快。

亚太地区因其全球半导体业务的优势和资本投资的支持，成为全球晶圆市场的重要区域。由于电动车产业的需求，日本企业正大力投资加强SiC功率半导体的生产。例如，2022年1月，富士电机株式会社宣布，决定对富士电机津轻半导体有限公司进行资本投资，以加强SiC功率半导体的生产。

此外，日本是晶圆生产的创新中心，不断开发新产品以增加产量。例如，经营工业控制业务的Nanotronics宣布于2022年12月发布其最新的光致发光系统「nSpecTM PRISM」。 Nanotronics 产品线的这项新增功能使 SiC 前端晶圆製造（从未抛光的 SiC基板到磊晶和装置製造）不再需要 KOH 蚀刻等有害检测技术。我们为以下领域提供全面的解决方案：对于微管和位错等 SiC 致命缺陷的大批量检测，该系统专门用于耦合透射显微镜和 PL 显微镜。

目录

第一章 简介

  • 市场概况
  • 市场定义
  • 调查范围
  • 市场区隔
  • 货币
  • 先决条件
  • 基准年和预测年时间表
  • 相关利益者的主要利益

第二章调查方法

  • 研究设计
  • 调查过程

第三章执行摘要

  • 主要发现
  • 分析师观点

第四章市场动态

  • 市场驱动因素
  • 市场限制因素
  • 波特五力分析
  • 产业价值链分析
  • 分析师观点

第五章碳化硅（SIC）晶圆市场：依规模

  • 介绍
  • 2-4英寸
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 6吋
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 8-12英寸
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察

第六章碳化硅（SIC）晶圆市场：依应用分类

  • 介绍
  • 沟通
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 电力和能源
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 车
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 家用电器
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察
  • 其他的
    • 市场趋势和机会
    • 成长前景
    • 地理盈利洞察

第七章碳化硅（SIC）晶圆市场：依地区

  • 介绍
  • 北美洲
    • 按尺寸
    • 按用途
    • 按国家/地区
  • 南美洲
    • 按尺寸
    • 按用途
    • 按国家/地区
  • 欧洲
    • 按尺寸
    • 按用途
    • 按国家/地区
  • 中东/非洲
    • 按类型
    • 按发展
    • 按最终用户
    • 按国家/地区
  • 亚太地区
    • 按尺寸
    • 按用途
    • 按国家/地区

第八章竞争环境及分析

  • 主要企业及策略分析
  • 市场占有率分析
  • 合併、收购、协议和合作
  • 有竞争力的仪表板

第九章 公司简介

  • Wolfspeed Inc
  • STMicroelectronics
  • Infineon Technologies
  • TankeBlue
  • Atecom Technology Co Ltd
  • SK Siltron Co Ltd
  • SiCrystal GmbH
  • Xiamen Powerway Advanced Material Co Ltd
  • Silicon Valley Microelectronics Inc.
简介目录
Product Code: KSI061614471

The SiC wafer market is projected to grow at a CAGR of 21.60% to reach US$1.299 billion in 2029 from US$0.331 billion in 2022.

SiC wafers are silicon carbide semiconductors. The wide bandgap of silicon carbide (SiC) makes it suitable for high-power applications. SiC substrates are frequently the foundation for high-performance power ICs. SiC enhances the performance of electrical devices by withstanding higher temperatures than silicon or gallium nitride (GaN). Today's semiconductor business is rapidly increasing, which implies that wafer supply is critical to success. Chipmakers are increasingly resorting to both in-house and external sources to generate the requisite SiC wafers to meet the increased demand for SiC semiconductors.

Market Drivers

  • Growing applicability in EV application has propelled the market growth.

To meet customer expectations, new EVs in the automotive sector feature shorter charge times, longer ranges, and better performance. To provide the benefits listed above to customers, automobile businesses need powerful electronic components capable of effective and efficient functioning at high temperatures. Due to the benefits of SiC-based technology, such as its high thermal conductivity, low switching losses, improved power density, and increased bandwidth capabilities, power modules are now being created employing wide-bandgap SiC technologies. Soitec introduced its first 200 mm silicon carbide SmartSiC wafer in May 2022, and with the release, Soitec was able to expand its line of SiC products beyond 150 mm, advance the research and development of its SmartSiC wafers, and meet the expanding needs of the automobile industry.

The exclusive SmartSiC technology from Soitec allows power electronics equipment to work much better and increases the energy economy of electric vehicles. The technique entails attaching a very thin layer of superior SiC to a polySiC wafer with extremely low resistance. Furthermore, Germany is known for its engineering prowess, and the country's automotive sector is essential to the world's shift to electric mobility. recognizing this as a chance In collaboration with the German automotive supplier ZF, American chipmaker Wolfspeed announced its plans to construct a 200-mm silicon carbide (SiC) wafer fab and R&D facility in Saarland, Germany in February 2023. For the whole power electronics sector, including the automotive, industrial, and renewable energy applications, the facility will concentrate on next-generation SiC products and processes.

  • The 6-inch Sic wafer size is predicted to account for a significant share.

SiC power semiconductors outperform traditional silicon-based power semiconductors, the industry standard at the moment, in terms of heat resistance and high withstanding voltage. SiC power semiconductor helps power modules become smaller and more energy efficient. As a result, SiC power semiconductors are in high demand across many industries, particularly for usage in xEVs, railcars, and industrial machinery. Most n-type SiC substrates used for power semiconductor devices have a diameter of 6 inches. Even though the development of 8-inch SiC wafers has seen significant progress from major IDMs, more time is still needed to raise yield rates and convert power semiconductor fabs' 6-inch production lines to 8-inch production lines.

So, for the foreseeable future, 6-inch SiC substrates are likely to stay popular. For instance, in March 2022, SDK began mass production of silicon carbide single crystal wafers (SiC wafers) with a diameter of 6 inches (150 mm). Customers choosing SDK's SiC epitaxial wafers led to the decision to begin internal mass manufacturing of 6-inch SiC wafers.

Asia Pacific region is estimated to have the fastest growth rate.

Due to its dominance of the worldwide semiconductor business and the support of capital investment, the Asia Pacific is a significant region in the global SiC wafer market. Due to the demand from the EV industry, Japanese companies are investing heavily to enhance the manufacturing of SiC power semiconductors. For instance, to boost the production of SiC power semiconductors, in January 2022, Fuji Electric Co., Ltd. announced that it has decided to make a capital investment in Fuji Electric Tsugaru Semiconductor Co., Ltd.

In addition, Japan has been a center for technological innovation in the production of SiC wafers and continues to develop new products to boost output. For instance, the industrial control business Nanotronics announced the release of its most recent photoluminescence system, the nSpecTM PRISM, in December 2022. By removing the need for harmful testing techniques like KOH etching, this addition to the Nanotronics product line provides a comprehensive solution for SiC frontend wafer manufacture from unpolished SiC substrate to epitaxy and device manufacturing. For high-volume inspection of SiC killer defects such as micropipes and dislocations, the system specializes in coupling transmission and PL microscopy.

Key Development

  • In September 2022: The next-generation G10-SiC 200 mm product solution for silicon carbide epitaxy was introduced by AIXTRON. The new G10-SiC system is based on the well-established G5 WW C 150 mm platform and offers a configurable dual wafer size option. The SiC industry's move from 150 mm (6 inches) to 200 mm (8 inches) wafer diameter depends on this feature. The new platform is based on an automated wafer cassette-to-cassette loading method that transfers wafers at high temperatures. The G10SiC offers best-in-class wafer throughput and throughput per square meter when combined with fast growth rate process capabilities to effectively utilize the constrained cleanroom area available in semiconductor fabs.

Segmentation:

By Size

  • 2 to 4 inches
  • 6 inches
  • 8 to 12 inches

By Application

  • Communication
  • Power & Energy
  • Automotive
  • Consumer Electronics
  • Others

By Geography

  • North America
  • USA
  • Canada
  • Mexico
  • South America
  • Brazil
  • Argentina
  • Others
  • Europe
  • United Kingdom
  • Germany
  • France
  • Italy
  • Spain
  • Others
  • Middle East and Africa
  • Saudi Arabia
  • UAE
  • Others
  • Asia Pacific
  • China
  • Japan
  • India
  • South Korea
  • Australia
  • Others

TABLE OF CONTENTS

1. INTRODUCTION

  • 1.1. Market Overview
  • 1.2. Market Definition
  • 1.3. Scope of the Study
  • 1.4. Market Segmentation
  • 1.5. Currency
  • 1.6. Assumptions
  • 1.7. Base, and Forecast Years Timeline
  • 1.8. Key Benefits for the stakeholder

2. RESEARCH METHODOLOGY

  • 2.1. Research Design
  • 2.2. Research Processes

3. EXECUTIVE SUMMARY

  • 3.1. Key Findings
  • 3.2. Analyst View

4. MARKET DYNAMICS

  • 4.1. Market Drivers
  • 4.2. Market Restraints
  • 4.3. Porter's Five Forces Analysis
    • 4.3.1. Bargaining Power of Suppliers
    • 4.3.2. Bargaining Power of Buyers
    • 4.3.3. Threat of New Entrants
    • 4.3.4. Threat of Substitutes
    • 4.3.5. Competitive Rivalry in the Industry
  • 4.4. Industry Value Chain Analysis
  • 4.5. Analyst View

5. SILICON CARBIDE (SIC) WAFER MARKET BY SIZE

  • 5.1. Introduction
  • 5.2. 2 to 4 Inches
    • 5.2.1. Market Trends and Opportunities
    • 5.2.2. Growth Prospects
    • 5.2.3. Geographic Lucrativeness Insights
  • 5.3. 6 Inches
    • 5.3.1. Market Trends and Opportunities
    • 5.3.2. Growth Prospects
    • 5.3.3. Geographic Lucrativeness Insights
  • 5.4. 8 to 12 Inches
    • 5.4.1. Market Trends and Opportunities
    • 5.4.2. Growth Prospects
    • 5.4.3. Geographic Lucrativeness Insights

6. SILICON CARBIDE (SIC) WAFER MARKET BY APPLICATION

  • 6.1. Introduction
  • 6.2. Communication
    • 6.2.1. Market Trends and Opportunities
    • 6.2.2. Growth Prospects
    • 6.2.3. Geographic Lucrativeness Insights
  • 6.3. Power & Energy
    • 6.3.1. Market Trends and Opportunities
    • 6.3.2. Growth Prospects
    • 6.3.3. Geographic Lucrativeness Insights
  • 6.4. Automotive
    • 6.4.1. Market Trends and Opportunities
    • 6.4.2. Growth Prospects
    • 6.4.3. Geographic Lucrativeness Insights
  • 6.5. Consumer Electronics
    • 6.5.1. Market Trends and Opportunities
    • 6.5.2. Growth Prospects
    • 6.5.3. Geographic Lucrativeness Insights
  • 6.6. Others
    • 6.6.1. Market Trends and Opportunities
    • 6.6.2. Growth Prospects
    • 6.6.3. Geographic Lucrativeness Insights

7. SILICON CARBIDE (SIC) WAFER MARKET BY GEOGRAPHY

  • 7.1. Introduction
  • 7.2. North America
    • 7.2.1. By Size
    • 7.2.2. By Application
    • 7.2.3. By Country
      • 7.2.3.1. USA
        • 7.2.3.1.1. Market Trends and Opportunities
        • 7.2.3.1.2. Growth Prospects
      • 7.2.3.2. Canada
        • 7.2.3.2.1. Market Trends and Opportunities
        • 7.2.3.2.2. Growth Prospects
      • 7.2.3.3. Mexico
        • 7.2.3.3.1. Market Trends and Opportunities
        • 7.2.3.3.2. Growth Prospects
  • 7.3. South America
    • 7.3.1. By Size
    • 7.3.2. By Application
    • 7.3.3. By Country
      • 7.3.3.1. Brazil
        • 7.3.3.1.1. Market Trends and Opportunities
        • 7.3.3.1.2. Growth Prospects
      • 7.3.3.2. Argentina
        • 7.3.3.2.1. Market Trends and Opportunities
        • 7.3.3.2.2. Growth Prospects
      • 7.3.3.3. Others
        • 7.3.3.3.1. Market Trends and Opportunities
        • 7.3.3.3.2. Growth Prospects
  • 7.4. Europe
    • 7.4.1. By Size
    • 7.4.2. By Application
    • 7.4.3. By Country
      • 7.4.3.1. United Kingdom
        • 7.4.3.1.1. Market Trends and Opportunities
        • 7.4.3.1.2. Growth Prospects
      • 7.4.3.2. Germany
        • 7.4.3.2.1. Market Trends and Opportunities
        • 7.4.3.2.2. Growth Prospects
      • 7.4.3.3. France
        • 7.4.3.3.1. Market Trends and Opportunities
        • 7.4.3.3.2. Growth Prospects
      • 7.4.3.4. Italy
        • 7.4.3.4.1. Market Trends and Opportunities
        • 7.4.3.4.2. Growth Prospects
      • 7.4.3.5. Spain
        • 7.4.3.5.1. Market Trends and Opportunities
        • 7.4.3.5.2. Growth Prospects
      • 7.4.3.6. Others
        • 7.4.3.6.1. Market Trends and Opportunities
        • 7.4.3.6.2. Growth Prospects
  • 7.5. Middle East and Africa
    • 7.5.1. By Type
    • 7.5.2. By Deployment
    • 7.5.3. By End-User
    • 7.5.4. By Country
      • 7.5.4.1. Saudi Arabia
        • 7.5.4.1.1. Market Trends and Opportunities
        • 7.5.4.1.2. Growth Prospects
      • 7.5.4.2. UAE
        • 7.5.4.2.1. Market Trends and Opportunities
        • 7.5.4.2.2. Growth Prospects
      • 7.5.4.3. Others
        • 7.5.4.3.1. Market Trends and Opportunities
        • 7.5.4.3.2. Growth Prospects
  • 7.6. Asia Pacific
    • 7.6.1. By Size
    • 7.6.2. By Application
    • 7.6.3. By Country
      • 7.6.3.1. China
        • 7.6.3.1.1. Market Trends and Opportunities
        • 7.6.3.1.2. Growth Prospects
      • 7.6.3.2. Japan
        • 7.6.3.2.1. Market Trends and Opportunities
        • 7.6.3.2.2. Growth Prospects
      • 7.6.3.3. India
        • 7.6.3.3.1. Market Trends and Opportunities
        • 7.6.3.3.2. Growth Prospects
      • 7.6.3.4. South Korea
        • 7.6.3.4.1. Market Trends and Opportunities
        • 7.6.3.4.2. Growth Prospects
      • 7.6.3.5. Taiwan
        • 7.6.3.5.1. Market Trends and Opportunities
        • 7.6.3.5.2. Growth Prospects
      • 7.6.3.6. Others
        • 7.6.3.6.1. Market Trends and Opportunities
        • 7.6.3.6.2. Growth Prospects

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

  • 8.1. Major Players and Strategy Analysis
  • 8.2. Market Share Analysis
  • 8.3. Mergers, Acquisitions, Agreements, and Collaborations
  • 8.4. Competitive Dashboard

9. COMPANY PROFILES

  • 9.1. Wolfspeed Inc
  • 9.2. STMicroelectronics
  • 9.3. Infineon Technologies
  • 9.4. TankeBlue
  • 9.5. Atecom Technology Co Ltd
  • 9.6. SK Siltron Co Ltd
  • 9.7. SiCrystal GmbH
  • 9.8. Xiamen Powerway Advanced Material Co Ltd
  • 9.9. Silicon Valley Microelectronics Inc.